Analog Devices ADA4898-1YRDZ, ADA4898 Datasheet

High Voltage, Low Noise, Low Distortion,
Unity Gain Stable, High Speed Op Amp
ADA4898-1
Rev. 0
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FEATURES
Ultralow noise
0.9 nV/√Hz
2.4 pA/√Hz
1.2 nV/√Hz @10 Hz Ultralow distortion: −93 dBc at 500 kHz Wide supply voltage range: ±5 V to ±16 V High speed
−3 dB bandwidth: 65 MHz (G = +1)
Slew rate: 55 V/µs Unity gain stable Low input offset voltage: 150 µV maximum Low input offset voltage drift: 1 V/°C Low input bias current: −0.1 µA Low input bias current drift: 2 nA/°C Supply current: 8 mA Power-down feature
APPLICATIONS
Instrumentation Active filters DAC buffers SAR ADC drivers Optoelectronics
CONNECTION DIAGRAM
NC
1
–IN
2
+IN
3
–V
S
4
PD
8
+V
S
7
OUT
6
NC
5
NC = NO CONNECT
ADA4898-1
07037-001
Figure 1. 8-Lead SOIC_N_EP (RD-8)
GENERAL DESCRIPTION
The ADA4898-1 is an ultralow noise and distortion, unity gain stable, voltage feedback op amp that is ideal for use in 16-bit and 18-bit systems with power supplies from ±5 V to ±16 V. The ADA4898-1 features a linear, low noise input stage and internal compensation that achieves high slew rates and low noise.
With the wide supply voltage range, low offset voltage, and wide bandwidth, the ADA4898-1 is designed to work in the most demanding applications. The ADA4898-1 also features an input bias current cancellation mode that reduces input bias current by a factor of 60.
The ADA4898-1 is available in an 8-lead SOIC package that features an exposed metal paddle on its underside that improves heat transfer to the ground plane. This is a significant improvement over traditional plastic packages. The ADA4898-1 is rated to work over the extended automotive temperature range of
−40°C to +105°C.
07037-002
FREQUENCY (Hz)
VOLTAGE NOISE (nV/√Hz)
CURRENT NOISE (p A/√Hz)
1
0.1
1
10
0.1
1
10
10 100 1k 10k 100k
CURRENT
VOLTAGE
Figure 2. Input Voltage Noise and Current Noise vs. Frequency
ADA4898-1
Rev. 0 | Page 2 of 16
TABLE OF CONTENTS
Features .............................................................................................. 1
Applications....................................................................................... 1
Connection Diagram .......................................................................1
General Description......................................................................... 1
Revision History ............................................................................... 2
Specifications with ±15 V Supply................................................... 3
Specifications with ±5 V Supply..................................................... 4
Absolute Maximum Ratings............................................................ 5
Thermal Resistance ...................................................................... 5
Maximum Power Dissipation .....................................................5
ESD Caution.................................................................................. 5
Pin Configuration and Function Descriptions............................. 6
Typical Performance Characteristics............................................. 7
Test C irc uits ..................................................................................... 12
Theory of Operation ...................................................................... 13
PD
(Power Down) Pin............................................................... 13
Current Noise Measurement .................................................... 13
Applications Information.............................................................. 14
Higher Feedback Gain Operation............................................ 14
Recommended Values for Various Gains................................ 14
Noise ............................................................................................ 15
Circuit Considerations .............................................................. 15
PCB Layout ................................................................................. 15
Power Supply Bypassing............................................................ 15
Grounding................................................................................... 15
Outline Dimensions .......................................................................16
Ordering Guide .......................................................................... 16
REVISION HISTORY
5/08—Revision 0: Initial Release
ADA4898-1
Rev. 0 | Page 3 of 16
SPECIFICATIONS WITH ±15 V SUPPLY
TA = 25°C, G = +1, RF = 0 Ω, RG open, RL = 1 kΩ to GND (for G > 1, RF = 100 Ω), unless otherwise noted.
Table 1.
Parameter Conditions Min Typ Max Unit
DYNAMIC PERFORMANCE
−3 dB Bandwidth V
OUT
= 100 mV p-p 65 MHz
V
OUT
= 2 V p-p 14 MHz
Bandwidth for 0.1 dB Flatness G = +2, V
OUT
= 2 V p-p 3.3 MHz
Slew Rate V
OUT
= 5 V step 55 V/μs
Settling Time to 0.1% V
OUT
= 5 V step 85 ns
NOISE/DISTORTION PERFORMANCE
Harmonic Distortion SFDR f = 100 kHz, V
OUT
= 2 V p-p −116 dBc
f = 500 kHz, V
OUT
= 2 V p-p −93 dBc
f = 1 MHz, V
OUT
= 2 V p-p −79 dBc Input Voltage Noise f = 100 kHz 0.9 nV/√Hz Input Current Noise f = 100 kHz 2.4 pA/√Hz
DC PERFORMANCE
Input Offset Voltage 20 110 μV Input Offset Voltage Drift 1 μV/°C Input Bias Current
−0.1 −0.4 μA Input Bias Offset Current 0.03 0.3 μA Input Bias Current Drift 2 nA/°C Open-Loop Gain V
OUT
= ±5 V 99 103 dB
INPUT CHARACTERISTICS
Input Resistance Differential mode 5 Common mode 30 MΩ Input Capacitance Differential mode 0.8 pF Common mode 2.2 pF Input Common-Mode Voltage Range ±11 V Common-Mode Rejection Ratio VCM = ±2 V −103 −126 dB
PD (Power Down) PIN
PD Input Voltages
Chip powered down ≤−14 V Chip enabled ≥−13 V Input Leakage Current
PD = +VS
−0.1 μA
PD = −VS
−0.2 μA
OUTPUT CHARACTERISTICS
Output Voltage Swing RL = 1 kΩ −11.4 to +12.1 −11.7 to +12.2 V R
L
= None ±12.76 ±12.82 V Short-Circuit Current Sinking/sourcing 150 mA Off Isolation
f = 1 MHz,
PD = −V
S
80 dB
POWER SUPPLY
Operating Range ±4.5 ±16.5 V Quiescent Current
PD = +V
S
8.1 mA
PD = −V
S
0.1 mA Positive Power Supply Rejection Ratio +VS = 15 V to 17 V, −VS = −15 V −98 −107 dB Negative Power Supply Rejection Ratio +VS = 15 V, −VS = −15 V to −17 V −100 −114 dB
ADA4898-1
Rev. 0 | Page 4 of 16
SPECIFICATIONS WITH ±5 V SUPPLY
TA = 25°C, G = +1, RF = 0 Ω, RG open, RL = 1 kΩ to GND (for G > 1, RF = 100 Ω), unless otherwise noted.
Table 2.
Parameter Conditions Min Typ Max Unit
DYNAMIC PERFORMANCE
−3 dB Bandwidth V
OUT
= 100 mV p-p 57 MHz
V
OUT
= 2 V p-p 12 MHz
Bandwidth for 0.1 dB Flatness G = +2, V
OUT
= 2 V p-p 3 MHz
Slew Rate V
OUT
= 2 V step 50 V/μs
Settling Time to 0.1% V
OUT
= 2 V step 90 ns
NOISE/DISTORTION PERFORMANCE
Harmonic Distortion SFDR f = 500 kHz, V
OUT
= 2 V p-p −95 dBc
f = 1 MHz, V
OUT
= 2 V p-p −78 dBc Input Voltage Noise f = 100 kHz 0.9 nV/√Hz Input Current Noise f = 100 kHz 2.4 pA/√Hz
DC PERFORMANCE
Input Offset Voltage 30 150 μV Input Offset Voltage Drift 1 μV/°C Input Bias Current −0.1 −0.4 μA Input Bias Offset Current 0.01 0.3 μA Input Bias Current Drift 2 nA/°C Open-Loop Gain V
OUT
= ±1 V 90 94 dB
INPUT CHARACTERISTICS
Input Resistance Differential mode 5 Common mode 30 MΩ Input Capacitance Differential mode 0.8 pF Common mode 2.2 pF Input Common-Mode Voltage Range −3 to +2.5 V Common-Mode Rejection Ratio VCM = ±1 V −102 −120 dB
PD (Power Down) PIN
PD Input Voltages
Chip powered down ≤−4 V Chip enabled ≥−3 V Input Leakage Current
PD = +VS
0.1 μA
PD = −VS
−2 μA
OUTPUT CHARACTERISTICS
Output Voltage Swing RL = 1 kΩ ±3.12 ±3.17 V R
L
= None ±3.3 ±3.34 V Short-Circuit Current Sinking/sourcing 150 mA Off Isolation
f = 1 MHz,
PD = −V
S
80 dB
POWER SUPPLY
Operating Range ±4.5 ±16.5 V Quiescent Current
PD = +V
S
7.7 mA
PD = −V
S
0.1 mA Positive Power Supply Rejection Ratio +VS = 5 V to 7 V, −VS = −5 V −95 −100 dB Negative Power Supply Rejection Ratio +VS = 5 V, −VS = −5 V to −7 V −97 −104 dB
ADA4898-1
Rev. 0 | Page 5 of 16
ABSOLUTE MAXIMUM RATINGS
Table 3.
Parameter Rating
Supply Voltage 36 V Power Dissipation See Figure 3 Differential Mode Input Voltage ±1.5 V Common-Mode Input Voltage ±11.4 V Storage Temperature Range −65°C to +150°C Operating Temperature Range −40°C to +105°C Lead Temperature (Soldering, 10 sec) 300°C Junction Temperature 150°C
Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
THERMAL RESISTANCE
θJA is specified for the worst-case conditions, that is, θJA is specified for a device soldered in the circuit board with its exposed paddle soldered to a pad on the PCB surface that is thermally connected to a copper plane, with zero airflow.
Table 4.
Package Type θJAθJCUnit
8-Lead SOIC with EP on Four-Layer Board 47 29
°C/W
MAXIMUM POWER DISSIPATION
The maximum safe power dissipation in the ADA4898-1 package is limited by the associated rise in junction temperature (T
J
) on the die. At approximately 150°C, which is the glass transition temperature, the plastic changes its properties. Even temporarily exceeding this temperature limit can change the stresses that the package exerts on the die, permanently shifting the parametric performance of the ADA4898-1. Exceeding a junction temperature of 150°C for an extended period can result in changes in the silicon devices, potentially causing failure.
The power dissipated in the package (P
D
) is the sum of the quiescent power dissipation and the power dissipated in the package due to the output load drive. The quiescent power is the voltage between the supply pins (V
S
) times the quiescent
current (I
S
). The power dissipated due to the load drive depends upon the particular application. For each output, the power due to load drive is calculated by multiplying the load current by the associated voltage drop across the device. RMS voltages and currents must be used in these calculations.
Airflow increases heat dissipation, effectively reducing θ
JA
. In addition, more metal directly in contact with the package leads from metal traces, through holes, ground, and power planes reduces the θ
JA
. The exposed paddle on the underside of the package must be soldered to a pad on the PCB surface that is thermally connected to a copper plane to achieve the specified θ
JA
.
Figure 3 shows the maximum safe power dissipation in the package vs. the ambient temperature for the 8-lead SOIC_EP (47°C/W) on a JEDEC standard four-layer board, with its underside paddle soldered to a pad that is thermally connected to a PCB plane. θ
JA
values are approximations.
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
07037-003
AMBIENT TEMPERATURE (°C)
MAXIMUM POWER DISSIPATIO N (W)
0 2040608010010 30 50 70 90–40 –20–30 –10
Figure 3. Maximum Power Dissipation vs. Ambient Temperature
ESD CAUTION
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