13 ns settling time to 0.5%
Wide supply range: 5 V to 12 V
Low power: 6 mA/amplifier
0.1 dB flatness: 100 MHz
Differential gain: 0.01%
Differential phase: 0.02°
Low voltage offset: 100 μV (typical)
High output current: 25 mA
Power down
APPLICATIONS
Consumer video
Professional video
Broadband video
ADC buffers
Active filters
GENERAL DESCRIPTION
The ADA4861-3 is a low cost, high speed, current feedback,
triple op amp that provides excellent overall performance. The
730 MHz, −3 dB bandwidth, and 625 V/μs slew rate make this
amplifier well suited for many high speed applications. With its
combination of low price, excellent differential gain (0.01%),
differential phase (0.02°), and 0.1 dB flatness out to 100 MHz,
this amplifier is ideal for both consumer and professional video
applications.
The ADA4861-3 is designed to operate on supply voltages as
lo
w as +5 V and up to ±5 V using only 6 mA/amplifier of supply
current. To further reduce power consumption, each amplifier
is equipped with a power-down feature that lowers the supply
current to 0.3 mA/amplifier when not being used.
The ADA4861-3 is available in a 14-lead SOIC_N package and
ned to work over the extended temperature range of
is desig
−40°C to +105°C.
Triple Op Amp
ADA4861-3
PIN CONFIGURATION
+V
+IN 1
–IN 1
OUT 1
1
2
3
4
S
5
6
7
ADA4861-3
POWER DOW N 1
POWER DOW N 2
POWER DOW N 3
Figure 1.
6.1
6.0
5.9
5.8
5.7
5.6
5.5
5.4
CLOSED-LOOP GAIN (dB)
5.3
5.2
5.1
0.11101001000
FREQUENCY (MHz)
Figure 2. Large Signal 0.1 dB Flatness
VS = +5V
14
13
12
11
10
9
8
OUT 2
–IN 2
+IN 2
–V
S
+IN 3
–IN 3
OUT 3
G = +2
V
OUT
R
= RG = 301Ω
F
05708-001
= 2V p-p
= ±5V
V
S
05708-011
Rev. A
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Anal og Devices for its use, nor for any infringements of patents or ot her
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
Input Common-Mode Voltage Range G = +1 −3.7 to +3.7 V
Common-Mode Rejection Ratio VCM = ±2 V −55 −58 dB
POWER-DOWN PINS
Input Voltage Enabled −4.4 V
Power down −3.2 V
Bias Current Enabled −3 μA
Power down 250 μA
Turn-On Time 200 ns
Turn-Off Time 3.5 μs
OUTPUT CHARACTERISTICS
Output Overdrive Recovery Time (Rise/Fall) VIN = ±3.0 V 30/90 ns
Output Voltage Swing RL = 150 Ω ±2 −3.1 to +3.65 V
R
Short-Circuit Current Sinking and sourcing 100 mA
POWER SUPPLY
Operating Range 5 12 V
Total Quiescent Current Enabled 13.5 17.9 20.5 mA
Quiescent Current/Amplifier POWER DOWN pins = +VS 0.3 0.5 mA
Power Supply Rejection Ratio
+PSR +VS = 4 V to 6 V, −VS = −5 V −63 −66 dB
−PSR
= 2 V p-p 210 MHz
O
Amplifier 1 and Amplifier 2 driven,
Amplifier 3 output measur
−2 −0.7 +1 μA
= 1 kΩ ±3.9 ±4.05 V
L
= 5 V, −VS = −4 V to −6 V,
+V
S
POWER DOWN pins = −V
ed, f = 1 MHz
S
−65 dB
−59 −62 dB
Rev. A | Page 4 of 16
ADA4861-3
www.BDTIC.com/ADI
ABSOLUTE MAXIMUM RATINGS
Table 3.
Parameter Rating
Supply Voltage 12.6 V
Power Dissipation See Figure 3
Common-Mode Input Voltage −VS + 1 V to +VS − 1 V
Differential Input Voltage ±VS
Storage Temperature −65°C to +125°C
Operating Temperature Range −40°C to +105°C
Lead Temperature JEDEC J-STD-20
Junction Temperature 150°C
Stresses above those listed under Absolute Maximum Ratings
y cause permanent damage to the device. This is a stress
ma
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
THERMAL RESISTANCE
θJA is specified for the worst-case conditions, that is, θJA is
specified for device soldered in circuit board for surface-mount
packages.
Table 4. Thermal Resistance
Package Type θJA Unit
14-lead SOIC_N 90 °C/W
Maximum Power Dissipation
The maximum safe power dissipation for the ADA4861-3 is
limited by the associated rise in junction temperature (T
the die. At approximately 150°C, which is the glass transition
temperature, the plastic changes its properties. Even temporarily
exceeding this temperature limit can change the stresses that the
package exerts on the die, permanently shifting the parametric
performance of the amplifiers. Exceeding a junction temperature of
150°C for an extended period can result in changes in silicon
devices, potentially causing degradation or loss of functionality.
) on
J
The power dissipated in the package (P
quiescent power dissipation and the power dissipated in the die
due to the amplifiers’ drive at the output. The quiescent power
is the voltage between the supply pins (V
current (I
).
S
= Quiescent Power + (Total Drive Power − Load Power)
P
D
VV
⎛
S
()
D
IVP
SS
OUT
×+×=
⎜
2
R
⎝
L
RMS output voltages should be considered.
Airflow increases heat dissipation, effectively reducing θ
In addition, more metal directly in contact with the package
leads and through holes under the device reduces θ
Figure 3 shows the maximum safe power dissipation in the
ackage vs. the ambient temperature for the 14-lead SOIC_N
p
(90°C/W) on a JEDEC standard 4-layer board. θ
approximations.
2.5
2.0
1.5
1.0
0.5
MAXIMUM POW ER DISSIPAT ION (W)
0
–55125–45–35–25–15–5 5 152535455565758595105115
AMBIENT TEMPERATURE (°C)
Figure 3. Maximum Power Dissipation vs. Temperature for a 4-Layer Board
) is the sum of the
D
) times the quiescent
S
2
V
⎞
OUT
–
⎟
R
L
⎠
.
JA
values are
JA
.
JA
05708-002
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
Rev. A | Page 5 of 16
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