850 MHz, −3 dB bandwidth (G = +1, R
750 MHz, −3 dB bandwidth (G = +1, R
2800 V/µs slew rate
Low distortion: −88 dBc @ 10 MHz (G = +1, R
Low power: 5 mA/amplifier @ 10 V
Low noise: 4.4 nV/√Hz
Wide supply voltage range: 5 V to 10 V
Power-down feature
Available in 3 mm × 3 mm 8-lead LFCSP (single), 8-lead SOIC
(single), and 4 mm × 4 mm 16-lead LFCSP (dual)
APPLICATIONS
Instrumentation
IF and baseband amplifiers
Active filters
ADC drivers
DAC buffers
= 1 kΩ, LFCSP)
L
= 1 kΩ, SOIC)
L
= 1 kΩ)
L
Ultralow Distortion, Low Power,
CONNECTION DIAGRAMS
Figure 1. 8-Lead LFCSP (CP)
Figure 2. 8-Lead SOIC (R)
GENERAL DESCRIPTION
The ADA4857 is a unity-gain stable, high speed, voltage feedback
amplifier with low distortion, low noise, and high slew rate. With a
spurious-free dynamic range (SFDR) of −88 dBc @ 10 MHz, the
ADA4857 is an ideal solution for a variety of applications, including
ultrasounds, ATE, active filters, and ADC drivers. The Analog
Devices, Inc., proprietary next-generation XFCB process and
innovative architecture enables such high performance amplifiers.
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change with out notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Figure 3. 16-Lead LFCSP (CP)
The ADA4857 has 850 MHz bandwidth, 2800 V/µs slew rate, and
settles to 0.1% in 15 ns. With a wide supply voltage range (5 V to
10 V), the ADA4857 is an ideal candidate for systems that require
high dynamic range, precision, and speed.
The ADA4857-1 amplifier is available in a 3 mm × 3 mm, 8-lead
LFCSP and a standard 8-lead SOIC. The ADA4857-2 is available in
a 4 mm × 4 mm, 16-lead LFCSP. The LFCSP features an exposed
paddle that provides a low thermal resistance path to the printed
circuit board (PCB). This path enables more efficient heat transfer
and increases reliability. The ADA4857 works over the extended
industrial temperature range (−40°C to +125°C).
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700
www.analog.com
ADA4857-1/ADA4857-2 Data Sheet
TABLE OF CONTENTS
Features .............................................................................................. 1
Changes to Layout .......................................................................... 15
Changes to Table 8 .......................................................................... 16
Added Active Low-Pass Filter (LFP) Section .............................. 17
Added Figure 48 and Figure 49; Renumbered Sequentially ..... 17
Changes to Grounding Section ..................................................... 18
Exposed Paddle Notation Added to Outline Dimensions ........ 19
Changes to Ordering Guide .......................................................... 20
5/08—Revision 0: Initial Ve r s ion
Rev. B | Page 2 of 20
Data Sheet ADA4857-1/ADA4857-2
f = 10 MHz, G = +1, V
= 2 V p-p (HD2)
−88 dBc
Common-Mode Rejection Ratio
VCM = ±1 V
−78
−86 dB
Output Overdrive Recovery Time
VIN = ±2.5 V, G = +2
10 ns
SPECIFICATIONS
±5 V SUPPLY
TA = 25°C, G = +2, RG = RF = 499 Ω, RS = 100 Ω for G = +1 (SOIC), RL = 1 kΩ to ground, PD = no connect, unless otherwise noted.
Table 1.
Parameter Conditions Min Typ Max Unit
DYNAMIC PERFORMANCE
–3 dB Bandwidth (LFCSP/SOIC) G = +1, V
G = +1, V
G = +2, V
Full Power Bandwidth G = +1, V
Bandwidth for 0.1 dB Flatness (LFCSP/SOIC) G = +2, V
Slew Rate (10% to 90%) G = +1, V
Settling Time to 0.1% G = +2, V
NOISE/HARMONIC PERFORMANCE
Harmonic Distortion f = 1 MHz, G = +1, V
f = 1 MHz, G = +1, V
f = 10 MHz, G = +1, V
f = 50 MHz, G = +1, V
f = 50 MHz, G = +1, V
Input Voltage Noise f = 100 kHz 4.4 nV/√Hz
Input Current Noise f = 100 kHz 1.5 pA/√Hz
DC PERFORMANCE
Input Offset Voltage ±2 ±4.5 mV
Input Offset Voltage Drift 2.3 µV/°C
Input Bias Current
−2 −3.3 µA
Input Bias Current Drift 24.5 nA/°C
Input Bias Offset Current 50 nA
Open-Loop Gain V
OUT
PD (POWER-DOWN) PIN
PD Input Voltage Chip powered down ≥(VCC − 2) V
Chip enabled ≤(VCC − 4.2) V
Turn-Off Time 50% off PD to <10% of final V
Turn-On Time 50% off PD to <10% of final V
PD Pin Leakage Current Chip enabled 58 µA
Chip powered down 80 µA
INPUT CHARACTERISTICS
Input Resistance Common mode 8 MΩ
Differential mode 4 MΩ
Input Capacitance Common mode 2 pF
Input Common-Mode Voltage Range ±4 V
= 0.2 V p-p 650 850/750 MHz
OUT
= 2 V p-p 600/550 MHz
OUT
= 0.2 V p-p 400/350 MHz
OUT
= 2 V p-p, THD < −40 dBc 110 MHz
OUT
= 2 V p-p, RL = 150 Ω 75/90 MHz
OUT
= 4 V step 2800 V/µs
OUT
= 2 V step 15 ns
OUT
= 2 V p-p (HD2) −108 dBc
OUT
= 2 V p-p (HD3) −108 dBc
OUT
OUT
= 2 V p-p (HD3) −93 dBc
OUT
= 2 V p-p (HD2) −65 dBc
OUT
= 2 V p-p (HD3) −62 dBc
OUT
= −2.5 V to +2.5 V 57 dB
, VIN = 1 V, G = +2 55 µs
OUT
, VIN = 1 V, G = +2 33 ns
OUT
OUTPUT CHARACTERISTICS
Output Voltage Swing RL = 1 kΩ ±4 V
RL = 100 Ω ±3.7 V
Output Current 50 mA
Short-Circuit Current Sinking and sourcing 125 mA
Capacitive Load Drive 30% overshoot, G = +2 10 pF
Rev. B | Page 3 of 20
ADA4857-1/ADA4857-2 Data Sheet
Positive Power Supply Rejection
+VS = 4.5 V to 5.5 V, −VS = −5 V
−59
−62 dB
f = 50 MHz, G = +1, V
= 2 V p-p (HD2)
−69 dBc
PD Pin Leakage Current
Chip enable
8
µA
Parameter Conditions Min Typ Max Unit
POWER SUPPLY
Operating Range 4.5 10.5 V
Quiescent Current 5 5.5 mA
Quiescent Current (Power Down) PD ≥ VCC − 2 V 350 450 µA
Negative Power Supply Rejection +VS = 5 V, −VS = −4.5 V to −5.5 V −65 −68 dB
+5 V SUPPLY
TA = 25°C, G = +2, RF = RG = 499 Ω, RS = 100 Ω for G = +1 (SOIC), RL = 1 kΩ to midsupply, PD = no connect, unless otherwise noted.
Table 2.
Parameter Conditions Min Typ Max Unit
DYNAMIC PERFORMANCE
–3 dB Bandwidth (LFCSP/SOIC) G = +1, V
G = +1, V
G = +2, V
Full Power Bandwidth G = +1, V
Bandwidth for 0.1 dB Flatness (LFCSP/SOIC) G = +2, V
Slew Rate (10% to 90%) G = +1, V
Settling Time to 0.1% G = +2, V
NOISE/HARMONIC PERFORMANCE
Harmonic Distortion f = 1 MHz, G = +1, V
f = 1 MHz, G = +1, V
f = 10 MHz, G = +1, V
f = 10 MHz, G = +1, V
f = 50 MHz, G = +1, V
Input Voltage Noise f = 100 kHz 4.4 nV/√Hz
Input Current Noise f = 100 kHz 1.5 pA/√Hz
DC PERFORMANCE
Input Offset Voltage ±1 ±4.2 mV
Input Offset Voltage Drift 4.6 µV/°C
Input Bias Current
−1.7 −3.3 µA
Input Bias Current Drift 24.5 nA/°C
Input Bias Offset Current 50 nA
Open-Loop Gain V
OUT
PD (POWER-DOWN) PIN
PD Input Voltage Chip powered down ≥(VCC − 2) V
Chip enabled ≤(VCC − 4.2) V
Turn-Off Time 50% off PD to <10% of fin al V
Turn-On Time 50% off PD to <10% of final V
= 0.2 V p-p 595 800/750 MHz
OUT
= 2 V p-p 500/400 MHz
OUT
= 0.2 V p-p 360/300 MHz
OUT
= 2 V p-p, THD < −40 dBc 95 MHz
OUT
= 2 V p-p, RL = 150 Ω 50/40 MHz
OUT
= 2 V step 1500 V/µs
OUT
= 2 V step 15 ns
OUT
= 2 V p-p (HD2) −92 dBc
OUT
= 2 V p-p (HD3) −90 dBc
OUT
= 2 V p-p (HD2) −81 dBc
OUT
= 2 V p-p (HD3) −71 dBc
OUT
OUT
= 2 V p-p (HD3) −55 dBc
OUT
= 1.25 V to 3.75 V 57 dB
, VIN = 1 V, G = +2 38 µs
OUT
, VIN = 1 V, G = +2 30 ns
OUT
Chip powered down 30 µA
INPUT CHARACTERISTICS
Input Resistance Common mode 8 MΩ
Differential mode 4 MΩ
Input Capacitance Common mode 2 pF
Input Common-Mode Voltage Range 1 to 4 V
Common-Mode Rejection Ratio VCM = 2 V to 3 V −76 −84 dB
Rev. B | Page 4 of 20
Data Sheet ADA4857-1/ADA4857-2
Output Current
50 mA
Parameter Conditions Min Typ Max Unit
OUTPUT CHARACTERISTICS
Overdrive Recovery Time G = +2 15 ns
Output Voltage Swing RL = 1 kΩ 1 to 4 V
RL = 100 Ω 1.1 to 3.9 V
Short-Circuit Current Sinking and sourcing 75 mA
Capacitive Load Drive 30% overshoot, G = +2 10 pF
POWER SUPPLY
Operating Range 4.5 10.5 V
Quiescent Current 4.5 5 mA
Quiescent Current (Power Down) PD ≥ VCC − 2 V 250 350 µA
Positive Power Supply Rejection +VS = 4.5 V to 5.5 V, −VS = 0 V −58 −62 dB
Negative Power Supply Rejection +VS = 5 V, −VS = −0.5 V to +0.5 V −65 −68 dB
Rev. B | Page 5 of 20
ADA4857-1/ADA4857-2 Data Sheet
Power Dissipation
See Figure 4
()
()
L
S
SS
D
R
V
IVP
2
4/
+×=
0
0.5
1.0
1.5
2.0
2.5
3.0
–40–30 –20–10 0 10 20 30 40
50 60 70 80 90 100 110 120
07040-004
AMBIENT T E M P E RATURE (°C)
MAXIMUM POWER DISSIPATION (W)
ADA4857-1 (SOIC)
ADA4857-1 (LFCSP )
ADA4857-2 (LFCSP )
ABSOLUTE MAXIMUM RATINGS
Table 3.
Parameter Rating
Supply Voltage 11 V
Common-Mode Input Voltage −VS + 0.7 V to +VS − 0.7 V
Differential Input Voltage ±VS
Exposed Paddle Voltage −VS
Storage Temperature Range −65°C to +125°C
Operating Temperature Range −40°C to +125°C
Lead Temperature (Soldering, 10 sec) 300°C
Junction Temperature 150°C
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
THERMAL RESISTANCE
θJA is specified for the worst-case conditions, that is, θJA is specified
for device soldered in circuit board for surface-mount packages.
The maximum safe power dissipation for the ADA4857 is
limited by the associated rise in junction temperature (T
the die. At approximately 150°C, which is the glass transition
temperature, the properties of the plastic change. Even temporarily
exceeding this temperature limit may change the stresses that
the package exerts on the die, permanently shifting the parametric
performance of the ADA4857. Exceeding a junction temperature of
175°C for an extended period can result in changes in silicon
devices, potentially causing degradation or loss of functionality.
) on
J
The power dissipated in the package (P
quiescent power dissipation and the power dissipated in the
die due to the ADA4857 drive at the output. The quiescent
power is the voltage between the supply pins (V
quiescent current (I
= Quiescent Power + (Total Drive Power − Load Power)
P
D
()
D
).
S
V
V
IVP
SS
OUTS
×+×=
R
2
L
RMS output voltages should be considered. If R
to −V
, as in single-supply operation, the total drive power is
S
V
× I
. If the rms signal levels are indeterminate, consider the
S
OUT
worst case, when V
= VS/4 for RL to midsupply.
OUT
In single-supply operation with R
case is V
= VS/2.
OUT
Airflow increases heat dissipation, effectively reducing θ
In addition, more metal directly in contact with the package
leads and exposed paddle from metal traces, through holes,
ground, and power planes reduces θ
Figure 4 shows the maximum power dissipation in the package
vs. the ambient temperature for the SOIC and LFCSP packages
on a JEDEC standard 4-layer board. θ
Figure 4. Maximum Power Dissipation vs. Temperature for a 4-Layer Board
ESD CAUTION
) is the sum of the
D
) times the
S
L
2
V
OUT
–
R
L
is referenced
L
referenced to −VS, the worst
.
JA
values are approximations.
JA
.
JA
Rev. B | Page 6 of 20
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