The ADA4610-2 is a dual channel, precision JFET amplifier
that features low input voltage and current noise, offset voltage,
input bias current, and rail-to-rail output.
The combination of low offset, noise, and very low input
bias current makes these amplifiers especially suitable for
high impedance sensor amplification and precise current
measurements using shunts. With excellent dc precision, low
noise, and fast settling time, the ADA4610-2 provides superior
accuracy in medical instruments, electronic measurement, and
automated test equipment. Unlike many competitive amplifiers,
the ADA4610-2maintains fast settling performance with
substantial capacitive loads. Unlike many older JFET amplifiers,
the ADA4610-2 does not suffer from output phase reversal
when input voltages exceed the maximum common-mode
voltage range.
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without noti ce. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
The fast slew rate and great stability with capacitive loads make
the ADA4610-2a perfect fit for high performance filters. Low
input bias currents, low offset, and low noise result in a wide
dynamic range for photodiode amplifier circuits. Low noise
and distortion, high output current, and excellent speed make
the ADA4610-2 a great choice for audio applications.
The ADA4610-2is specified over the −40°C to +125°C
extended industrial temperature range.
The ADA4610-2 is available in the 8-lead narrow SOIC, 8-lead
MSOP, and 8-lead LFCSP packages.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700
www.analog.com
ADA4610-2 Data Sheet
TABLE OF CONTENTS
Features .............................................................................................. 1
Parameter Symbol Test Conditions/Comments Min Typ Max Unit
INPUT CHARACTERISTICS
Offset Voltage (B Grade)1 VOS 0.2 0.4 mV
−40°C < TA < +125°C 0.8 mV
Offset Voltage (A Grade)1 VOS 0.4 1 mV
−40°C < TA < +125°C 1.8 mV
Offset Voltage Drift (A Grade)2 ΔVOS/ΔT 1 8 µV/°C
Input Bias Current IB 5 25 pA
−40°C < TA < +125°C 1.5 nA
Input Offset Current IOS 2 20 pA
Input Voltage Range −12.5 +12.5 V
Common-Mode Rejection Ratio CMRR VCM = −12.5 V to +12.5 V 100 115 dB
−40°C < TA < +125°C 96 dB
Large Signal Voltage Gain AVO RL = 2 kΩ, V
−40°C < TA < +125°C 91 dB
Input Capacitance, Differential VCM = 0 V 3.1 pF
Input Capacitance, Common-Mode VCM = 0 V 4.8 pF
Input Resistance VCM = 0 V >1 × 1013 Ω
= ±13.5 V 104 107 dB
OUT
Output Voltage High VOH RL = 2 kΩ 14.8 14.9 V
−40°C < TA < +125°C 14.65 V
RL = 600 Ω 14.25 14.47 V
−40°C < TA < +125°C 13.35 V
−40°C < TA < +125°C −14.75 V
RL = 600 Ω −14.68 −14.6 V
−40°C < TA < +125°C −14.3 V
Short-Circuit Current I
±79 mA
SC
POWER SUPPLY
Power Supply Rejection Ratio PSRR VSY = ±4.5 V to ±18 V 106 125 dB
−40°C < TA < +125°C 103 dB
Supply Current/Amplifier ISY I
= 0 mA 1.6 1.85 mA
OUT
DYNAMIC PERFORMANCE
Slew Rate SR RL = 2 kΩ ±172 +25/−61 V/µs
Gain Bandwidth Product GBP VIN = 5 mV p-p, RL = 2 kΩ, AV = 100 16.3 MHz
Unity-Gain Crossover UGC VIN = 5 mV p-p, RL = 2 kΩ, AV = −10 9.3 MHz
Phase Margin φM 66 Degrees
−3 dB Closed-Loop Bandwidth −3 dB AV = 1, VIN = 5 mV p-p 9.50 MHz
Total Harmonic Distortion (THD) + Noise THD + N 1 kHz, G = +1, RL = 2 kΩ, VIN = 6 V rms 0.00006 %
Rev. A | Page 4 of 20
Data Sheet ADA4610-2
f = 1 kHz
7.3 nV/√Hz
Parameter Symbol Test Conditions/Comments Min Typ Max Unit
NOISE PERFORMANCE
Peak-to-Peak Voltage Noise en p-p 0.1 Hz to 10 Hz bandwidth 0.45 µV p-p
Voltage Noise Density en f = 10 Hz 14 nV/√Hz
f = 100 Hz 8.5 nV/√Hz
f = 10 kHz 7.3 nV/√Hz
1
Offset voltage does not include solder heat resistance.
2
Guaranteed by design and characterization.
Rev. A | Page 5 of 20
ADA4610-2 Data Sheet
Electrostatic Discharge
2500 V
8-Lead SOIC_N (R-8)
120
43
°C/W
ABSOLUTE MAXIMUM RATINGS
Table 3.
Parameter Rating
Supply Voltage ±18 V
Input Voltage ±VS
Output Short-Circuit Duration to GND Observe derating curves
Storage Temperature Range −65°C to +150°C
Operating Temperature Range −40°C to +125°C
Junction Temperature Range −65°C to +150°C
Lead Temperature (Soldering, 10 sec) 300°C
(Human Body Model)
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
Table 4. Thermal Resistance
Package Type θ
8-Lead MSOP (RM-8) 142 45 °C/W
8-Lead LFCSP_VD (CP-8-9) 57 12 °C/W
1
θJA is specified for worst-case conditions, that is, θJA is specified for device
soldered in circuit board for surface-mount packages.
1
θ
JA
Unit
JC
ESD CAUTION
Rev. A | Page 6 of 20
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