−3 dB bandwidth: 310 MHz, G = +5, R
Slew rate: 1050 V/μs, R
LOAD
= 50 Ω
Wide output swing
20.6 V p-p differential, R
of 100 Ω from 12 V supply
LOAD
High output current
Low distortion
−98 dBc typical at 1 MHz, V
−72 dBc typical at 10 MHz, V
= 2 V p-p, G = +5, R
OUT
= 2 V p-p, G = +5, R
OUT
Power management and shutdown
Control inputs CMOS level compatible
Shutdown quiescent current: 1 mA/amplifier
Selectable quiescent current: 1 mA to 11.8 mA/amplifier
APPLICATIONS
Home networking line drivers
Twisted pair line drivers
Power line communications (PLC)
Video line drivers
ARB line drivers
I/Q channel amplifiers
LOAD
= 50 Ω
LOAD
LOAD
= 100 Ω
= 100 Ω
Line Driver with Shutdown
ADA4311-1
PIN CONFIGURATION
DA4311-1
1
+V
S
2
NC
OUT A
3
–IN A
4
+IN A
5
NC = NO CONNECT
Figure 1. Thermally Enhanced, 10-Lead MINI_SO_EP
TYPICAL APPLICATION
1/2
ADA4311-1
V
*
MID
1/2
–
V
CC
=
MID
Figure 2. Typical PLC Driver Application
ADA4311-1
GND
2
10
9
8
7
6
OUT B
–IN B
+IN B
PD1
PD0
06940-001
06940-002
GENERAL DESCRIPTION
The ADA4311-1 is comprised of two high speed, current
feedback operational amplifiers. The high output current, high
bandwidth, and fast slew rate make it an excellent choice for
broadband applications requiring high linearity performance
while driving low impedance loads.
The ADA4311-1 incorporates a power management function
that provides shutdown capabilities and the ability to optimize
the quiescent current of the amplifiers. The CMOS-compatible,
power-down control pins (PD1 and PD0) enable the ADA4311-1
to operate in four different modes: full power, medium power,
low power, and complete power-down. In power-down mode, the
quiescent current drops to only 1.0 mA/amplifier, while the outputs
go to a high impedance state.
Rev. 0
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Anal og Devices for its use, nor for any infringements of patents or ot her
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
The ADA4311-1 is available in a thermally enhanced, 10-lead
MSOP with an exposed paddle for improved thermal conduction.
The ADA4311-1 is rated to work in the extended industrial
temperature range of −40°C to +85°C.
Parameter Test Conditions/Comments Min Typ Max Unit
POWER-DOWN PINS
PD1, PD0 Threshold Referenced to GND 1.5 V
High Level Input Voltage, V
Low Level Input Voltage, V
IH
IL
PD1, PD0 = 0 Pin Bias Current PD1 or PD0 = 0 V −1.5 −0.2 +1.5 μA
PD1, PD0 = 1 Pin Bias Current PD1 or PD0 = 3 V 40 63 80 μA
Enable/Disable Time 130/116 ns
Power Supply Rejection Ratio −63 −70 dB
2 5 V
0 0.8 V
Rev. 0 | Page 4 of 16
ADA4311-1
ABSOLUTE MAXIMUM RATINGS
Table 2.
Parameter Rating
Supply Voltage 13.6 V
Power Dissipation (T
JMAX
− TA)/θ
JA
Storage Temperature Range −65°C to +125°C
Operating Temperature Range −40°C to +85°C
Lead Temperature (Soldering 10 sec) 300°C
Junction Temperature 150°C
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress rating
only; functional operation of the device at these or any other
conditions above those indicated in the operational section of
this specification is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
THERMAL RESISTANCE
Thermal resistance (θJA) is specified for the worst-case conditions,
that is, θ
surface-mount packages.
Table 3.
Package Type θ
10-Lead MINI_SO_EP 44 °C/W
is specified for device soldered in circuit board for
JA
JA
Unit
Maximum Power Dissipation
The maximum safe power dissipation for the ADA4311-1 is
limited by the associated rise in junction temperature (T
) on
J
the die. At approximately 150°C, which is the glass transition
temperature, the plastic changes its properties. Even temporarily
exceeding this temperature limit can change the stresses that the
package exerts on the die, permanently shifting the parametric
performance of the amplifiers. Exceeding a junction temperature of
150°C for an extended period can result in changes in silicon
devices, potentially causing degradation or loss of functionality.
Figure 3 shows the maximum safe power dissipation in
the package vs. the ambient temperature for the 10-lead
MINI_SO_EP (44°C/W) on a JEDEC standard 4-layer board.
θ
values are approximations.
JA
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
MAXIMUM POW ER DISSIP ATION (W )
0.5
0
–35–15525456585
Figure 3. Maximum Power Dissipation vs. Temperature for a 4-Layer Board
MINI_SO _EP-10
AMBIENT TEMPERATURE (°C)
06940-003
ESD CAUTION
Rev. 0 | Page 5 of 16
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