Offset voltage: 400 μV typical
Low offset voltage drift: 6 μV/°C maximum
(AD8692/AD8694)
Very low input bias currents: 1 pA maximum
Low noise: 8 nV/√Hz
Low distortion: 0.0006%
Wide bandwidth: 10 MHz
Unity-gain stable
Single-supply operation: 2.7 V to 6 V
Qualified for automotive applications
The AD8691, AD8692,and AD8694 are low cost, single, dual,
and quad rail-to-rail output, single-supply amplifiers featuring
low offset and input voltages, low current noise, and wide signal
bandwidth. The combination of low offset, low noise, very low
input bias currents, and high speed make these amplifiers useful
in a wide variety of applications. Filters, integrators, photodiode
amplifiers, and high impedance sensors all benefit from this
combination of performance features. Audio and other ac
applications benefit from the wide bandwidth and low
distortion of these devices.
Applications for these amplifiers include power amplifier (PA)
controls, laser diode control loops, portable and loop-powered
instrumentation, audio amplification for portable devices, and
ASIC input and output amplifiers.
The small SC70 and TSOT package options for the AD8691
allow it to be placed next to sensors, thereby reducing external
noise pickup.
The AD8691, AD8692, and AD8694 are specified over the
extended industrial temperature range of −40°C to +125°C.
The AD8691 single is available in 5-lead SC70 and 5-lead TSOT
packages. The AD8692 dual is available in 8-lead MSOP and
narrow SOIC surface-mount packages. The AD8694 quad is
available in 14-lead TSSOP and narrow 14-lead SOIC packages.
See the Ordering Guide section for automotive grades.
RROOperational Amplifiers
AD8691/AD8692/AD8694
PIN CONFIGURATIONS
UT
1
AD8691
2
V–
TOP VIEW
(Not to Scal e)
3
+IN
Figure 1. 5-Lead TSOT
UT A
+IN A
AD8691
1
2
V–
3
Figure 2. 5-Lead SC70
OUT A
1
AD8692
2
–IN A
+IN A
V–
TOP VIEW
3
(Not to Scale)
4
Figure 3. 8-Lead MSOP
OUT A
1
AD8692
2
–IN A
3
+IN A
V–
TOP VIEW
(Not to Scale)
4
Figure 4. 8-Lead SOIC
OUT A
1
–IN A
2
+IN A
3
AD8694
TOP VIEW
V+
4
(Not to Scal e)
5
+IN B
6
–IN B
OUT B
7
Figure 5. 14-Lead SOIC
1
OUT A
2
–IN A
3
+IN A
V+
+IN B
–IN B
OUT B
AD8694
TOP VIEW
4
(Not to Scale)
5
6
7
Figure 6. 14-Lead TSSOP
14
13
12
11
10
9
8
5
4
5
4
8
7
6
5
8
7
6
5
14
13
12
11
10
9
8
V+
–IN
V+
–IN
V+
OUT B
–IN B
+IN B
V+
OUT B
–IN B
+IN B
OUT D
–IN D
+IN D
V–
+IN C
–IN C
OUT C
OUT D
–IN D
+IN D
V–
+IN C
–IN C
OUT C
04991-030
04991-031
04991-001
04991-002
04991-032
04991-033
Rev. E
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
Changes to Ordering Guide.......................................................... 11
10/04—Revision 0: Initial Version
Rev. E | Page 2 of 16
AD8691/AD8692/AD8694
SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
VS = 2.7 V, VCM = VS/2, TA = 25°C, unless otherwise noted.
Table 1.
Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS
Offset Voltage VOS V
V
Input Bias Current IB 0.2 1 pA
−40°C < TA < +85°C 50 pA
−40°C < TA < +125°C 260 pA
Input Offset Current IOS 0.1 0.5 pA
−40°C < TA < +85°C 20 pA
−40°C < TA < +125°C 75 pA
Input Voltage Range −0.3 +1.6 V
Common-Mode Rejection Ratio CMRR VCM = −0.3 V to +1.6 V 68 90 dB
VCM = −0.1 V to +1.6 V; −40°C < TA < +125°C 60 85 dB
Large Signal Voltage Gain AVO
AD8691/AD8692 R
AD8694 R
Offset Voltage Drift ∆VOS/∆T
AD8691 2 12 μV/°C
AD8692/AD8694 1.3 6 μV/°C
INPUT CAPACITANCE
Common-Mode Input Capacitance C
Differential Input Capacitance C
CM
DM
OUTPUT CHARACTERISTICS
Output Voltage High VOH I
−40°C < TA < +125°C 2.6 V
Output Voltage Low VOL I
−40°C < TA < +125°C 60 mV
Short-Circuit Current ISC ±20 mA
Closed-Loop Output Impedance Z
f = 1 MHz, AV = 1 12 Ω
OUT
POWER SUPPLY
Power Supply Rejection Ratio PSRR VS = 2.7 V to 5.5 V 80 95 dB
−40°C < TA < +125°C 75 95 dB
Supply Current/Amplifier ISY V
−40°C < TA < +125°C 1.2 mA
DYNAMIC PERFORMANCE
Slew Rate SR RL = 2 kΩ 5 V/μs
Settling Time tS To 0.01% 1 μs
Gain Bandwidth Product GBP 10 MHz
Phase Margin Øm 60 Degrees
Total Harmonic Distortion + Noise THD + N G = 1, RL = 600 Ω, f = 1 kHz, VO = 250 mV p-p 0.003 %
NOISE PERFORMANCE
Voltage Noise e
f = 0.1 Hz to 10 Hz 1.6 3.0 μV p-p
n p-p
Voltage Noise Density en f = 1 kHz 8 12 nV/√Hz
e
f = 10 kHz 6.5 nV/√Hz
n
Current Noise Density in f = 1 kHz 0.05 pA/√Hz
= −0.3 V to +1.6 V 0.4 2.0 mV
CM
= −0.1 V to +1.6 V; −40°C < TA < +125°C 3.0 mV
CM
= 2 kΩ, VO = 0.5 V to 2.2 V 90 250 V/mV
L
= 2 kΩ, VO = 0.5 V to 2.2 V 60 V/mV
L
5 pF
2.5 pF
= 1 mA 2.64 2.66 V
L
= 1 mA 25 40 mV
L
= 0 V 0.85 0.95 mA
O
Rev. E | Page 3 of 16
AD8691/AD8692/AD8694
VS = 5.0 V, VCM = VS/2, TA = 25°C, unless otherwise noted.
Table 2.
Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS
Offset Voltage VOS V
V
Input Bias Current IB 0.2 1 pA
−40°C < TA < +85°C 50 pA
−40°C < TA < +125°C 260 pA
Input Offset Current IOS 0.1 0.5 pA
−40°C < TA < +85°C 20 pA
−40°C < TA < +125°C 75 pA
Input Voltage Range −0.3 +3.9 V
Common-Mode Rejection Ratio CMRR VCM = −0.3 V to +3.9 V 70 95 dB
V
Large Signal Voltage Gain AVO
AD8691/AD8692 V
AD8694 V
Offset Voltage Drift ∆VOS/∆T
AD8691 2 12 μV/°C
AD8692/AD8694 1.3 6 μV/°C
INPUT CAPACITANCE
Common-Mode Input Capacitance C
Differential Input Capacitance C
CM
DM
OUTPUT CHARACTERISTICS
Output Voltage High VOH I
I
−40°C to +125°C 4.6 V
Output Voltage Low VOL I
AD8691/AD8692 I
AD8694 I
AD8691/AD8692−40°C to +125°C 290 mV
AD8694−40°C to +125°C 370 mV
Short-Circuit Current ISC ±80 mA
Closed-Loop Output Impedance Z
f = 1 MHz, AV = 1 10 Ω
OUT
POWER SUPPLY
Power Supply Rejection Ratio PSRR VS = 2.7 V to 5.5 V 80 95 dB
−40°C < TA < +125°C 75 95 dB
Supply Current/Amplifier ISY V
−40°C < TA < +125°C 1.3 mA
DYNAMIC PERFORMANCE
Slew Rate SR RL = 2 kΩ 5 V/μs
Settling Time tS To 0.01% 1 μs
Full Power Bandwidth BWP <1% distortion 360 kHz
Gain Bandwidth Product GBP 10 MHz
Phase Margin Øm 65 Degrees
Total Harmonic Distortion + Noise THD + N G = 1, RL = 600 Ω, f = 1 kHz, VO = 1 V p-p 0.0006 %
NOISE PERFORMANCE
Voltage Noise e
f = 0.1 Hz to 10 Hz 1.6 3.0 μV p-p
n p-p
Voltage Noise Density en f = 1 kHz 8 12 nV/√Hz
e
f = 10 kHz 6.5 nV/√Hz
n
Current Noise Density in f = 1 kHz 0.05 pA/√Hz
= −0.3 V to +3.9 V 0.4 2.0 mV
CM
= −0.1 V to +3.9 V; −40°C < TA < +125°C 3.0 mV
CM
= −0.1 V to +3.9 V; −40°C < TA < +125°C 67 95 dB
CM
= 0.5 V to 4.5 V, RL = 2 kΩ, VCM = 0 V 250 2000 V/mV
O
= 0.5 V to 4.5 V, RL = 2 kΩ, VCM = 0 V 150 V/mV
O
5 pF
2.5 pF
= 1 mA 4.96 4.98 V
L
= 10 mA 4.7 4.78 V
L
= 1 mA 20 40 mV
L
= 10 mA 165 210 mV
L
= 10 mA 185 240 mV
L
= 0 V 0.95 1.05 mA
O
Rev. E | Page 4 of 16
AD8691/AD8692/AD8694
ABSOLUTE MAXIMUM RATINGS
TA = 25°C, unless otherwise noted.
Table 3.
Parameter Rating
Supply Voltage 6 V
Input Voltage VSS − 0.3 V to VDD + 0.3 V
Differential Input Voltage ±6 V
Output Short-Circuit Duration
to GND
Storage Temperature Range −65°C to +150°C
Operating Temperature Range −40°C to +125°C
Junction Temperature Range −65°C to +150°C
Lead Temperature
(Soldering, 60 sec)
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
Observe derating curves
300°C
THERMAL CHARACTERISTICS
θJA is specified for the worst-case conditions, that is, the device
soldered in the circuit board for surface-mount packages.