Analog Devices AD8632ARM, AD8632AR, AD8631ART Datasheet

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a
AD8631/AD8632
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781/329-4700 World Wide Web Site: http://www.analog.com Fax: 781/326-8703 © Analog Devices, Inc., 2000
1.8 V, 5 MHz Rail-to-Rail
Low Power Operational Amplifiers
PIN CONFIGURATIONS
5-Lead SOT-23
(RT Suffix)
1
2
3
5
4
–IN A+IN A
V+
OUT A
AD8631
V–
8-Lead SOIC
(R Suffix)
OUT A
–IN A
+IN A
V–
V+
OUT B
–IN B
+IN B
AD8632
18
27
36
45
8-Lead SOIC
(RM Suffix)
–IN A +IN A
V–
OUT B –IN B +IN B
V+
1
4
5
8
AD8632
OUT A
FEATURES Single Supply Operation: 1.8 V to 6 V Space-Saving SOT-23, SOIC Packaging Wide Bandwidth: 5 MHz @ 5 V, 4 MHz @ 1.8 V Low Offset Voltage: 4 mV Max, 0.8 mV typ Rail-to-Rail Input and Output Swing 2 V/s Slew Rate @ 1.8 V Only 225 A Supply Current @ 1.8 V
APPLICATIONS
Portable Communications Portable Phones Sensor Interface Active Filters PCMCIA Cards ASIC Input Drivers Wearable Computers Battery-Powered Devices New Generation Phones Personal Digital Assistants
GENERAL DESCRIPTION
The AD8631 brings precision and bandwidth to the SOT-23-5 package at single supply voltages as low as 1.8 V and low supply current. The small package makes it possible to place the AD8631 next to sensors, reducing external noise pickup.
The AD8631 and AD8632 are rail-to-rail input and output bipolar amplifiers with a gain bandwidth of 4 MHz and typical voltage offset of 0.8 mV from a 1.8 V supply. The low supply current and the low supply voltage makes these parts ideal for battery-powered applications. The 3 V/µs slew rate makes the AD8631/AD8632 a good match for driving ASIC inputs, such as voice codecs.
The AD8631/AD8632 is specified over the extended industrial (–40C to +125C) temperature range. The AD8631 single is available in 5-lead SOT-23 surface-mount packages. The dual AD8632 is available in 8-lead SOIC and µSOIC packages.
–2–
REV. 0
AD8631/AD8632–SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS
Offset Voltage V
OS
0.8 4.0 mV
–40C T
A
+125C6mV
Input Bias Current I
B
250 nA
–40C T
A
+125C 500 nA
Input Offset Current I
OS
±150 nA
–40C T
A
+125C 550 nA
Input Voltage Range V
CM
05V
Common-Mode Rejection Ratio CMRR 0 V ≤ V
CM
5 V, 63 70 dB
–40C T
A
+125C56 dB
Large Signal Voltage Gain A
VO
RL = 10 k, 0.5 V < V
OUT
< 4.5 V 25 V/mV
R
L
= 100 k, 0.5 V < V
OUT
< 4.5 V 100 400 V/mV
R
L
= 100 k, –40ⴗC ≤ TA +125C 100 V/mV
Offset Voltage Drift ∆V
OS
/T 3.5 µV/ⴗC
Bias Current Drift ∆IB/T 400 pA/C
OUTPUT CHARACTERISTICS
Output Voltage Swing High V
OH
IL = 100 µA –40C T
A
+125C 4.965 V
I
L
= 1 mA 4.7 V
Output Voltage Swing Low V
OL
IL = 100 µA –40C T
A
+125C35mV
I
L
= 1 mA 200 mV
Short Circuit Current I
SC
Short to Ground, Instantaneous ±10 mA
POWER SUPPLY
Power Supply Rejection Ratio PSRR VS = 2.2 V to 6 V, 75 90 dB
–40C T
A
+125C72 dB
Supply Current/Amplifier I
SY
V
OUT
= 2.5 V 300 450 µA
–40C TA +125C 650 µA
DYNAMIC PERFORMANCE
Slew Rate SR 1 V < V
OUT
< 4 V, RL = 10 k 3V/µs Gain Bandwidth Product GBP 5 MHz Settling Time T
S
0.1% 860 ns
Phase Margin φ
m
53 Degrees
NOISE PERFORMANCE
Voltage Noise en p-p 0.1 Hz to 10 Hz 0.8 µV p-p Voltage Noise Density e
n
f = 1 kHz 23 nV/Hz
Current Noise Density i
n
f = 1 kHz 1.7 pA/Hz
Specifications subject to change without notice.
(VS = 5 V, V– = 0 V, VCM = 2.5 V, TA = 25C unless otherwise noted)
–3–REV. 0
AD8631/AD8632
ELECTRICAL CHARACTERISTICS
Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS
Offset Voltage V
OS
0.8 4.0 mV
–40C T
A
+125C6mV
Input Bias Current I
B
250 nA
Input Offset Current I
OS
±150 nA
Input Voltage Range V
CM
0 2.2 V
Common-Mode Rejection Ratio CMRR 0 V ≤ V
CM
2.2 V, 54 70 dB
–40C T
A
+125C47 dB
Large Signal Voltage Gain A
VO
RL = 10 k, 0.5 V < V
OUT
< 1.7 V 25 V/mV
RL = 100 k 50 200 V/mV
OUTPUT CHARACTERISTICS
Output Voltage Swing High V
OH
IL = 100 µA 2.165 V I
L
= 750 µA 1.9 V
Output Voltage Swing Low V
OL
IL = 100 µA35mV IL = 750 µA 200 mV
POWER SUPPLY
Supply Current/Amplifier I
SY
V
OUT
= 1.1 V 250 350 µA
–40C TA +125C 500 µA
DYNAMIC PERFORMANCE
Slew Rate SR RL = 10 k 2.5 V/µs Gain Bandwidth Product GBP 4.3 MHz Phase Margin φ
m
50 Degrees
NOISE PERFORMANCE
Voltage Noise Density e
n
f = 1 kHz 23 nV/Hz
Current Noise Density i
n
f = 1 kHz 1.7 pA/Hz
Specifications subject to change without notice.
(VS = 2.2 V, V– = 0 V, VCM = 1.1 V, TA = 25C unless otherwise noted)
–4–
REV. 0
AD8631/AD8632–SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS
Offset Voltage V
OS
0.8 4.0 mV
0C T
A
125C6mV
Input Bias Current I
B
250 nA
Input Offset Current I
OS
±150 nA
Input Voltage Range V
CM
0 1.8 V
Common-Mode Rejection Ratio CMRR 0 V ≤ V
CM
1.8 V,
0C T
A
125C4965dB
Large Signal Voltage Gain A
VO
RL = 10 k, 0.5 V < V
OUT
< 1.3 V 20 V/mV
RL = 100 k, 0.5 V < V
OUT
< 1.3 V 40 200 V/mV
OUTPUT CHARACTERISTICS
Output Voltage Swing High V
OH
IL = 100 µA 1.765 V I
L
= 750 µA 1.5 V
Output Voltage Swing Low V
OL
IL = 100 µA35mV IL = 750 µA 200 mV
POWER SUPPLY
Power Supply Rejection Ratio PSRR VS = 1.7 V to 2.2 V, 68 86 dB
0C T
A
125C65 dB
Supply Current/Amplifier I
SY
V
OUT
= 0.9 V 225 325 µA
0C TA 125C 450 µA
DYNAMIC PERFORMANCE
Slew Rate SR RL = 10 k 2V/µs Gain Bandwidth Product GBP 4 MHz Phase Margin φ
m
49 Degrees
NOISE PERFORMANCE
Voltage Noise Density e
n
f = 1 kHz 23 nV/Hz
Current Noise Density i
n
f = 1 kHz 1.7 pA/Hz
Specifications subject to change without notice.
(VS = 1.8 V, V– = 0 V, VCM = 0.9 V, TA = 25C unless otherwise noted)
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