Low noise: 6 nV/√Hz
Low offset voltage: 100 μV maximum
Low input bias current: 10 pA maximum
Fast settling: 600 ns to 0.01%
Low distortion
Unity gain stable
No phase reversal
Dual-supply operation: ±5 V to ±13 V
APPLICATIONS
Photodiode amplifiers
AT E
Instrumentation
Sensors and controls
High performance filters
Fast precision integrators
High performance audio
GENERAL DESCRIPTION
The AD8610/AD8620 are very high precision JFET input amplifiers featuring ultralow offset voltage and drift, very low input
voltage and current noise, very low input bias current, and wide
bandwidth. Unlike many JFET amplifiers, the AD8610/AD8620
input bias current is low over the entire operating temperature
range. The AD8610/AD8620 are stable with capacitive loads of
over 1000 pF in noninverting unity gain; much larger capacitive
loads can be driven easily at higher noise gains. The AD8610/
AD8620 swing to within 1.2 V of the supplies even with a 1 kΩ
load, maximizing dynamic range even with limited supply voltages. Outputs slew at 50 V/μs in either inverting or noninverting
gain configurations, and settle to 0.01% accuracy in less than
600 ns. Combined with high input impedance, great precision,
and very high output drive, the AD8610/AD8620 are ideal
amplifiers for driving high performance ADC inputs and
buffering DAC converter outputs.
AD8610/AD8620
PIN CONFIGURATIONS
NULL
1
–IN
2
AD8610
+IN
3
TOP VIEW
(Not to Scale)
4
V–
NC = NO CONNECT
Figure 1. 8-Lead MSOP and 8-Lead SOIC_N
OUTA
1
–INA
2
AD8620
3
+INA
TOP VIEW
(Not to Scale)
4
V–
Figure 2. 8-Lead SOIC_N
Applications for the AD8610/AD8620 include electronic instruments; ATE amplification, buffering, and integrator circuits;
CAT/MRI/ultrasound medical instrumentation; instrumentation
quality photodiode amplification; fast precision filters (including
PLL filters); and high quality audio.
The AD8610/AD8620 are fully specified over the extended
industrial temperature range (−40°C to +125°C). The AD8610
is available in the narrow 8-lead SOIC and the tiny 8-lead MSOP
surface-mount packages. The AD8620 is available in the narrow
8-lead SOIC package. The 8-lead MSOP packaged devices are
avail-able only in tape and reel.
8
7
6
5
8
7
6
5
NC
V+
OUT
NULL
V+
OUTB
–INB
+INB
02730-001
2730-002
Rev. F
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
Addition of Figure 30 ..................................................................... 16
Rev. F | Page 2 of 24
AD8610/AD8620
SPECIFICATIONS
@ VS = ±5.0 V, VCM = 0 V, TA = 25°C, unless otherwise noted.
Table 1.
Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS
Offset Voltage (AD8610B) VOS 45 100 μV
−40°C < TA < +125°C 80 200 μV
Offset Voltage (AD8620B) VOS 45 150 μV
−40°C < TA < +125°C 80 300 μV
Offset Voltage (AD8610A/AD8620A) VOS 85 250 μV
25°C < TA < 125°C 90 350 μV
−40°C < TA < +125°C 150 850 μV
Input Bias Current IB −10 +2 +10 pA
−40°C < TA < +85°C −250 +130 +250 pA
−40°C < TA < +125°C −2.5 +1.5 +2.5 nA
Input Offset Current IOS −10 +1 +10 pA
−40°C < TA < +85°C −75 +20 +75 pA
−40°C < TA < +125°C −150 +40 +150 pA
Input Voltage Range −2 +3 V
Common-Mode Rejection Ratio CMRR VCM = –1.5 V to +2.5 V 90 95 dB
Large Signal Voltage Gain AVO RL = 1 kΩ, VO = −3 V to +3 V 100 180 V/mV
Offset Voltage Drift (AD8610B) ΔVOS/ΔT −40°C < TA < +125°C 0.5 1 μV/°C
Offset Voltage Drift (AD8620B) ΔVOS/ΔT −40°C < TA < +125°C 0.5 1.5 μV/°C
Offset Voltage Drift (AD8610A/AD8620A) ΔVOS/ΔT −40°C < TA < +125°C 0.8 3.5 μV/°C
OUTPUT CHARACTERISTICS
Output Voltage High VOH RL = 1 kΩ, −40°C < TA < +125°C 3.8 4 V
Output Voltage Low VOL RL = 1 kΩ, −40°C < TA < +125°C −4 −3.8 V
Output Current I
POWER SUPPLY
Power Supply Rejection Ratio PSRR VS = ±5 V to ±13 V 100 110 dB
Supply Current per Amplifier ISY VO = 0 V 2.5 3.0 mA
−40°C < TA < +125°C 3.0 3.5 mA
DYNAMIC PERFORMANCE
Slew Rate SR RL = 2 kΩ 40 50 V/μs
Gain Bandwidth Product GBP 25 MHz
Settling Time tS AV = +1, 4 V step, to 0.01% 350 ns
NOISE PERFORMANCE
Voltage Noise en p-p 0.1 Hz to 10 Hz 1.8 μV p-p
Voltage Noise Density en f = 1 kHz 6 nV/√Hz
Current Noise Density in f = 1 kHz 5 fA/√Hz
Input Capacitance CIN
Differential Mode 8 pF
Common Mode 15 pF
Channel Separation CS
f = 10 kHz 137 dB
f = 300 kHz 120 dB
V
OUT
> ±2 V ±30 mA
OUT
Rev. F | Page 3 of 24
AD8610/AD8620
ELECTRICAL SPECIFICATIONS
@ VS = ±13 V, VCM = 0 V, TA = 25°C, unless otherwise noted.
Table 2.
Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS
Offset Voltage (AD8610B) VOS 45 100 μV
−40°C < TA < +125°C 80 200 μV
Offset Voltage (AD8620B) VOS 45 150 μV
−40°C < TA < +125°C 80 300 μV
Offset Voltage (AD8610A/AD8620A) VOS 85 250 μV
25°C < TA < 125°C 90 350 μV
−40°C < TA < +125°C 150 850 μV
Input Bias Current IB −10 +3 +10 pA
−40°C < TA < +85°C −250 +130 +250 pA
−40°C < TA < +125°C −3.5 +3.5 nA
Input Offset Current IOS −10 +1.5 +10 pA
−40°C < TA < +85°C −75 +20 +75 pA
−40°C < TA < +125°C −150 +40 +150 pA
Input Voltage Range −10.5 +10.5 V
Common-Mode Rejection Ratio CMRR VCM = −10 V to +10 V 90 110 dB
Large Signal Voltage Gain AVO RL = 1 kΩ, VO = −10 V to +10 V 100 200 V/mV
Offset Voltage Drift (AD8610B) ΔVOS/ΔT −40°C < TA < +125°C 0.5 1 μV/°C
Offset Voltage Drift (AD8620B) ΔVOS/ΔT −40°C < TA < +125°C 0.5 1.5 μV/°C
Offset Voltage Drift (AD8610A/AD8620A) ΔVOS/ΔT −40°C < TA < +125°C 0.8 3.5 μV/°C
OUTPUT CHARACTERISTICS
Output Voltage High VOH RL = 1 kΩ, −40°C < TA < +125°C +11.75 +11.84 V
Output Voltage Low VOL RL = 1 kΩ, −40°C < TA < +125°C −11.84 −11.75 V
Output Current I
Short-Circuit Current ISC
POWER SUPPLY
Power Supply Rejection Ratio PSRR VS = ±5 V to ±13 V 100 110 dB
Supply Current per Amplifier ISY VO = 0 V 3.0 3.5 mA
−40°C < TA < +125°C 3.5 4.0 mA
DYNAMIC PERFORMANCE
Slew Rate SR RL = 2 kΩ 40 60 V/μs
Gain Bandwidth Product GBP 25 MHz
Settling Time tS AV = +1, 10 V step, to 0.01% 600 ns
NOISE PERFORMANCE
Voltage Noise en p-p 0.1 Hz to 10 Hz 1.8 μV p-p
Voltage Noise Density en f = 1 kHz 6 nV/√Hz
Current Noise Density in f = 1 kHz 5 fA/√Hz
Input Capacitance CIN
Differential Mode 8 pF
Common Mode 15 pF
Channel Separation CS
f = 10 kHz 137 dB
f = 300 kHz 120 dB
V
OUT
> 10 V ±45 mA
OUT
±65 mA
Rev. F | Page 4 of 24
AD8610/AD8620
ABSOLUTE MAXIMUM RATINGS
Table 3.
Parameter Rating
Supply Voltage 27.3 V
Input Voltage VS− to VS+
Differential Input Voltage ±Supply voltage
Output Short-Circuit Duration to GND Indefinite
Storage Temperature Range –65°C to +150°C
Operating Temperature Range –40°C to +125°C
Junction Temperature Range –65°C to +150°C
Lead Temperature (Soldering, 10 sec) 300°C
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.