The AD8615/AD8616/AD8618 are dual/quad, rail-to-rail, input
and output, single-supply amplifiers featuring very low offset
voltage, wide signal bandwidth, and low input voltage and
Input/Output Operational Amplifiers
AD8615/AD8616/AD8618
current noise. The parts use a patented trimming technique
that achieves superior precision without laser trimming.
The AD8615/AD8616/AD8618 are fully specified to operate
from 2.7 V to 5 V single supplies.
The combination of 20 MHz bandwidth, low offset, low noise,
and very low input bias current make these amplifiers useful in
a wide variety of applications. Filters, integrators, photodiode
amplifiers, and high impedance sensors all benefit from the
combination of performance features. AC applications benefit
from the wide bandwidth and low distortion. The
AD8615/AD8616/AD8618 offer the highest output drive
capability of the DigiTrim
line drivers and other low impedance applications.
Applications for the parts include portable and low powered
instrumentation, audio amplification for portable devices,
portable phone headsets, bar code scanners, and multipole
filters. The ability to swing rail-to-rail at both the input and
output enables designers to buffer CMOS ADCs, DACs, ASICs,
and other wide output swing devices in single-supply systems.
The AD8615/AD8616/AD8618 are specified over the extended
industrial (–40°C to +125°C) temperature range. The AD8615
is available in 5-lead TSOT-23 packages. The AD8616 is available in 8-lead MSOP and narrow SOIC surface-mount packages;
the MSOP version is available in tape and reel only. The
AD8618 is available in 14-lead SOIC and TSSOP packages.
TM
family, which is excellent for audio
PIN CONFIGURATIONS
5
4
8
7
6
5
8
7
6
5
V+
–IN
V+
OUT B
–IN B
+IN B
V+
OUT B
–IN B
+IN B
04648-B-050
04648-0-001
04648-0-002
1
OUT
AD8615
V–
2
TOP VIEW
(Not to Scale)
+IN
3
Figure 1. 5-Lead TSOT-23 (UJ-5)
OUT A
1
AD8616
2
–IN A
+IN A
3
TOP VIEW
(Not to Scale)
V–
4
Figure 2. 8-Lead MSOP (RM-8)
OUT A
1
V–
AD8616
2
3
TOP VIEW
(Not to Scale)
4
–IN A
+IN A
Figure 3. 8-Lead SOIC (R-8)
Rev. C
Information furnished by Analog Devices is believed to be accurate and reliable.
However, no responsibility is assumed by Analog Devices for its use, nor for any
infringements of patents or other rights of third parties that may result from its use.
Specifications subject to change without notice. No license is granted by implication
or otherwise under any patent or patent rights of Analog Devices. Trademarks and
registered trademarks are the property of their respective owners.
VS =5 V, VCM = VS/2, TA = 25°C, unless otherwise noted.
Table 1.
Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS
Offset Voltage AD8616/AD8618/
V
OS
AD8615
V
−40°C < TA < +125°C 800 μV
/∆T −40°C < TA < +125°C
Offset Voltage Drift AD8616/AD8618/
∆V
OS
AD8615
Input Bias Current I
B
−40°C < TA < +85°C 50 pA
−40°C < TA < +125°C 550 pA
Input Offset Current I
OS
−40°C < TA < +85°C 50 pA
−40°C < TA < +125°C 250 pA
Input Voltage Range 0 5 V
Common-Mode Rejection Ratio CMRR VCM = 0 V to 4.5 V 80 100 dB
Large Signal Voltage Gain A
Input Capacitance C
C
VO
DIFF
CM
OUTPUT CHARACTERISTICS
Output Voltage High V
OH
I
−40°C < TA < +125°C 4.7 V
Output Voltage Low V
OL
I
−40°C < TA < +125°C 200 mV
Output Current I
Closed-Loop Output Impedance Z
OUT
OUT
POWER SUPPLY
Power Supply Rejection Ratio PSRR VS = 2.7 V to 5.5 V 70 90 dB
Supply Current per Amplifier I
SY
−40°C < TA < +125°C 2.5 mA
DYNAMIC PERFORMANCE
Slew Rate SR RL = 2 kΩ 12 V/μs
Settling Time t
s
Gain Bandwidth Product GBP 24 MHz
Phase Margin Ø
m
NOISE PERFORMANCE
Peak-to-Peak Noise en p-p 0.1 Hz to 10 Hz 2.4 μV
Voltage Noise Density e
n
f = 10 kHz 7 nV/√Hz
Current Noise Density i
n
Channel Separation Cs f = 10 kHz –115 dB
f = 100 kHz –110 dB
VS = 3.5 V at VCM = 0.5 V and 3.0 V
= 0 V to 5 V 80 500 μV
CM
23
23
1.5
3
60
100
7
10
μV
μV
μV/°C
μV/°C
0.2 1 pA
0.1 0.5 pA
RL = 2 kΩ, VO = 0.5 V to 5 V 105 1500 V/mV
2.5 pF
6.7 pF
IL = 1 mA 4.98 4.99 V
= 10 mA 4.88 4.92 V
L
IL = 1 mA 7.5 15 mV
= 10 mA 70 100 mV
L
±150 mA
f = 1 MHz, AV = 1 3 Ω
VO = 0 V 1.7 2.0 mA
To 0.01% <0.5 μs
63 Degrees
f = 1 kHz 10 nV/√Hz
f = 1 kHz 0.05 pA/√Hz
Rev. C | Page 3 of 20
AD8615/AD8616/AD8618
VS = 2.7 V, VCM = VS/2, TA = 25°C, unless otherwise noted.
Table 2.
Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS
Offset Voltage AD8616/AD8618/
V
OS
AD8615
V
−40°C < TA < +125°C 800 μV
/∆T −40°C < TA < +125°C
Offset Voltage Drift AD8616/AD8618/
∆V
OS
AD8615
Input Bias Current I
B
−40°C < TA < +85°C 50 pA
−40°C < TA < +125°C 550 pA
Input Offset Current I
OS
−40°C < TA < +85°C 50 pA
−40°C < TA < +125°C 250 pA
Input Voltage Range 0 2.7 V
Common-Mode Rejection Ratio CMRR VCM = 0 V to 2.7 V 80 100 dB
Large Signal Voltage Gain A
Input Capacitance C
C
VO
DIFF
CM
OUTPUT CHARACTERISTICS
Output Voltage High V
OH
−40°C < TA < +125°C 2.6 V
Output Voltage Low V
OL
−40°C < TA < +125°C 30 mV
Output Current I
Closed-Loop Output Impedance Z
OUT
OUT
POWER SUPPLY
Power Supply Rejection Ratio PSRR VS = 2.7 V to 5.5 V 70 90 dB
Supply Current per Amplifier I
SY
−40°C < TA < +125°C 2.5 mA
DYNAMIC PERFORMANCE
Slew Rate SR RL = 2 kΩ 12 V/μs
Settling Time t
s
Gain Bandwidth Product GBP 23 MHz
Phase Margin Ø
m
NOISE PERFORMANCE
Peak-to-Peak Noise en p-p 0.1 Hz to 10 Hz 2.1 μV
Voltage Noise Density e
n
f = 10 kHz 7 nV/√Hz
Current Noise Density i
n
Channel Separation Cs f = 10 kHz –115 dB
f = 100 kHz –110 dB
VS = 3.5 V at VCM = 0.5 V and 3.0 V
= 0 V to 2.7 V 80 500 μV
CM
23
23
1.5
3
65
100
7
10
μV
μV
μV/°C
μV/°C
0.2 1 pA
0.1 0.5 pA
RL = 2 kΩ, VO = 0.5 V to 2.2 V 55 150 V/mV
2.5 pF
7.8 pF
IL = 1 mA 2.65 2.68 V
IL = 1 mA 11 25 mV
±50 mA
f = 1 MHz, AV = 1 3 Ω
VO = 0 V 1.7 2 mA
To 0.01% < 0.3 μs
42 Degrees
f = 1 kHz 10 nV/√Hz
f = 1 kHz 0.05 pA/√Hz
Rev. C | Page 4 of 20
AD8615/AD8616/AD8618
ABSOLUTE MAXIMUM RATINGS
Table 3.
Parameter Rating
Supply Voltage 6 V
Input Voltage GND to V
Differential Input Voltage ±3 V
Output Short-Circuit Duration to GND Indefinite
Storage Temperature –65°C to +150°C
Operating Temperature Range –40°C to +125°C
Lead Temperature Range (Soldering 60 sec) 300°C
Junction Temperature 150°C
S
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or
any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
THERMAL RESISTANCE
θJA is specified for the worst-case conditions, that is, θJA is
specified for device soldered in circuit board for surface-mount
packages.