Offset voltage: 2.2 mV max
Low input bias current: 1 pA max
Single-supply operation: 1.8 V to 5 V
Low noise: 22 nV/√Hz
Micropower: 38 μA
No phase reversal
Unity gain stable
APPLICATIONS
Battery-powered instrumentation
Multipole filters
Current shunt sense
Sensors
ADC predrivers
DAC drivers/level shifters
Low power ASIC input or output amplifiers
GENERAL DESCRIPTION
The AD8613/AD8617/AD8619 are single, dual, and quad
micropower, rail-to-rail input and output amplifiers that feature
low supply current, low input voltage, and low current noise.
The parts are fully specified to operate from 1.8 V to 5.0 V
ingle supply, or ±0.9 V and ±2.5 V dual supply. The combination
s
of low noise, very low input bias currents, and low power
consumption make the AD8613/AD8617/AD8619 especially
useful in portable and loop-powered instrumentation.
The ability to swing rail-to-rail at both the input and output
bles designers to buffer CMOS ADCs, DACs, ASICs, and
ena
other wide output swing devices in low power, single-supply
systems.
The AD8613 is available in a 5-lead SC70 package and a 5-lead
TSOT
-23 package. The AD8617 is available in 8-lead MSOP
and 8-lead SOIC packages. The AD8619 is available in 14-lead
TSSOP and 14-lead SOIC packages.
AD8613/AD8617/AD8619
PIN CONFIGURATIONS
14
13
12
11
10
5
4
8
7
6
5
8
7
6
5
14
13
12
11
10
9
8
V+
OUT B
–IN B
+IN B
9
8
OUT D
–IN D
+IN D
V–
+IN C
–IN C
OUT C
V+
–IN
V+
OUT B
–IN B
+IN B
OUT D
–IN D
+IN D
V–
+IN C
–IN C
OUT C
05622-037
05622-001
05622-002
05622-035
05622-036
1
OUT
+IN
V–
AD8613
TOP VIEW
2
(Not to Scale)
3
Figure 1. 5-Lead SC70 and 5-Lead TSOT-23
1
OUT A
–IN A
+IN A
V–
AD8617
2
TOP VIEW
3
(Not toScale)
4
Figure 2. 8-Lead MSOP
1
OUT A
–IN A
+IN A
V–
AD8617
2
3
TOP VIEW
(Not to Scale)
4
Figure 3. 8-Lead SOIC_N
1
OUT A
2
–IN A
3
+IN A
V+
+IN B
–IN B
OUT B
AD8619
TOP VIEW
4
(Not to Scale)
5
6
7
Figure 4. 14-Lead TSSOP
OUT A
1
2
–IN A
+IN A
3
AD8619
TOP VIEW
V+
4
(Not to Scale)
+IN B
5
6
–IN B
OUT B
7
Figure 5. 14-Lead SOIC_N
Rev. B
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Anal og Devices for its use, nor for any infringements of patents or ot her
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
Changes to Ordering Guide.......................................................... 13
9/05—Revision 0: Initial Version
Rev. B | Page 2 of 16
AD8613/AD8617/AD8619
www.BDTIC.com/ADI
SPECIFICATIONS
Electrical characteristics @ VS = 5 V, VCM = VS/2, TA = 25°C, unless otherwise noted.
Table 1.
Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS
Offset Voltage VOS −0.3 V < VCM < +5.3 V 0.4 2.2 mV
−40°C < TA < +125°C, −0.3 V < VCM < +5.2 V 2.2 mV
Offset Voltage Drift VOS/T −40°C < TA < +125°C 1 4.5 µV/°C
AD8613 2.5 7.0 µV/°C
Input Bias Current IB 0.2 1 pA
−40°C < TA < +85°C 110 pA
−40°C < TA < +125°C 780 pA
Input Offset Current IOS 0.1 0.5 pA
−40°C < TA < +85°C 50 pA
−40°C < TA < +125°C 250 pA
Common-Mode Rejection Ratio CMRR 0 V < VCM < 5 V 95 dB
−40°C < TA < +125°C 68 dB
Large Signal Voltage Gain AVO R
Input Capacitance C
C
OUTPUT CHARACTERISTICS
Output Voltage High VOH I
−40°C to +125°C 4.9 V
I
−40°C to +125°C 4.50 V
Output Voltage Low VOL I
−40°C to +125°C 50 mV
I
−40°C to +125°C 335 mV
Short-Circuit Current ISC ±80 mA
Closed-Loop Output Impedance Z
POWER SUPPLY
Power Supply Rejection Ratio PSRR 1.8 V < VS < 5 V 67 94 dB
−40°C < TA < +125°C 64 dB
Supply Current/Amplifier ISY V
−40°C <TA < +125°C 50 µA
DYNAMIC PERFORMANCE
Slew Rate SR RL = 10 kΩ 0.1 V/µs
Settling Time 0.1% t
Gain Bandwidth Product GBP RL = 100 kΩ 400 kHz
R
Phase Margin ØO R
NOISE PERFORMANCE
Peak-to-Peak Noise 2.3 3.5 µV
Voltage Noise Density en f = 1 kHz 25 nV/√Hz
f = 10 kHz 22 nV/√Hz
Current Noise Density in f = 1 kHz 0.05 pA/√Hz
1.9 pF
DIFF
2.5 pF
CM
f = 10 kHz, AV = 1 15 Ω
OUT
S
= 10 kΩ, 0.5 V < VO < 4.5 V 235 500 V/mV
L
= 1 mA 4.95 4.98 V
L
= 10 mA 4.7 V
L
= 1 mA 20 30 mV
L
= 10 mA 190 275 mV
L
= VS/2 38 µA
O
G = ±1, 2 V step, CL = 20 pF, RL = 1 kΩ 23 s
= 10 kΩ 350 kHz
L
= 10 kΩ, RL = 100 kΩ, CL = 20 pF 70 Degrees
L
Rev. B | Page 3 of 16
AD8613/AD8617/AD8619
www.BDTIC.com/ADI
Electrical characteristics @ VS = 1.8 V, VCM = VS/2, TA = 25°C, unless otherwise noted.
Table 2.
Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS
Offset Voltage VOS −0.3 V < VCM < +1.9 V 0.4 2.2 mV
−0.3 V < VCM < +1.8 V; −40°C < TA < +125°C 2.2 mV
Offset Voltage Drift VOS/T −40°C < TA < +125°C 1 8.5 µV/°C
AD8613 3.7 9.0 µV/°C
Input Bias Current IB 0.2 1 pA
−40°C < TA < +85°C 110 pA
−40°C < TA < +125°C 780 pA
Input Offset Current IOS 0.1 0.5 pA
−40°C < TA < +85°C 50 pA
−40°C < TA < +125°C 250 pA
Common-Mode Rejection Ratio CMRR 0 V < VCM < 1.8 V 58 86 dB
−40°C < TA < +125°C 55 dB
Large Signal Voltage Gain AVO R
Input Capacitance C
C
OUTPUT CHARACTERISTICS
Output Voltage High VOH I
−40°C to +125°C 1.6 V
Output Voltage Low VOL I
−40°C to +125°C 80 mV
Short-Circuit Current ISC ±7 mA
Closed-Loop Output Impedance Z
POWER SUPPLY
Power Supply Rejection Ratio PSRR 1.8 V < VS < 5 V 67 94 dB
Supply Current/Amplifier ISY V
−40°C <TA < +125°C 50 µA
DYNAMIC PERFORMANCE
Slew Rate SR RL = 10 kΩ 0.1 V/µs
Settling Time 0.1% t
Gain Bandwidth Product GBP RL = 100 kΩ 400 kHz
R
Phase Margin ØO R
NOISE PERFORMANCE
Peak-to-Peak Noise 2.3 3.5 µV
Voltage Noise Density en f = 1 kHz 25 nV/√Hz
f = 10 kHz 22 nV/√Hz
Current Noise Density in f = 1 kHz 0.05 pA/√Hz
2.1 pF
DIFF
3.8 pF
CM
f = 10 kHz, AV = 1 15 Ω
OUT
S
= 10 kΩ, 0.5 V < VO < 1.3 V 85 1000 V/mV
L
= 1 mA 1.65 1.73 V
L
= 1 mA 44 60 mV
L
= VS/2 38 µA
O
G = ±1, 1 V step, CL = 20 pF, RL = 1 kΩ 6.5 µs
= 10 kΩ 350 kHz
L
= 10 kΩ, RL = 100 kΩ, CL = 20 pF 70 Degrees
L
Rev. B | Page 4 of 16
AD8613/AD8617/AD8619
www.BDTIC.com/ADI
ABSOLUTE MAXIMUM RATINGS
TA = 25°C, unless otherwise noted.
Table 3.
Parameter Rating
Supply Voltage 6 V
Input Voltage VSS − 0.3 V to VDD + 0.3 V
Differential Input Voltage ±6 V
Output Short-Circuit Duration to GND Observe derating curve
Storage Temperature Range −65°C to +150°C
Lead Temperature (Soldering, 60 sec) 300°C
Operating Temperature Range −40°C to +125°C
Junction Temperature Range −65°C to +150°C
Stresses above those listed under Absolute Maximum Ratings
ma
y cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
Absolute maximum ratings apply at 25°C, unless otherwise
d.
note
THERMAL RESISTANCE
θJA is specified for the worst-case conditions, that is, a device
soldered in a circuit board for surface-mount packages.
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
Rev. B | Page 5 of 16
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