Low offset voltage: 65 μV maximum
Low input bias currents: 1 pA maximum
Low noise: 8 nV/√Hz
Wide bandwidth: 10 MHz
High open-loop gain: 1000 V/mV
Unity gain stable
Single-supply operation: 2.7 V to 5.5 V
5-ball WLCSP for single (AD8605) and 8-ball WLCSP for
The AD8605, AD8606, and AD86081 are single, dual, and quad
rail-to-rail input and output, single-supply amplifiers. They
feature very low offset voltage, low input voltage and current
noise, and wide signal bandwidth. They use the Analog Devices,
Inc. patented DigiTrim® trimming technique, which achieves
superior precision without laser trimming.
The combination of low offsets, low noise, very low input bias
currents, and high speed makes these amplifiers useful in a
wide variety of applications. Filters, integrators, photodiode
amplifiers, and high impedance sensors all benefit from the
combination of performance features. Audio and other ac
applications benefit from the wide bandwidth and low
distortion. Applications for these amplifiers include optical
control loops, portable and loop-powered instrumentation,
and audio amplification for portable devices.
The AD8605, AD8606, and AD8608 are specified over the
extended industrial temperature range (−40°C to +125°C). e
AD8605 single is available in 5-lead SOT-23 and 5-ball WLCSP
packages. The AD8606 dual is available in an 8-lead MSOP, an
8-ball WLSCP, and a narrow SOIC surface-mounted package.
The AD8608 quad is available in a 14-lead TSSOP package and
a narrow 14-lead SOIC package. The 5-ball and 8-ball WLCSP
offer the smallest available footprint for any surface-mounted
operational amplifier. The WLCSP, SOT-23, MSOP, and TSSOP
versions are available in tape-and-reel only.
1
Protected by U.S. Patent No. 5,969,657.
Rev. N Document Feedback
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
VS = 5 V, VCM = VS/2, TA = 25°C, unless otherwise noted.
Table 1.
Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS
Offset Voltage VOS
AD8605/AD8606 (Exce pt WLCSP) VS = 3.5 V, VCM = 3 V 20 65 µV
AD8608VS = 3.5 V, VCM = 2.7 V 20 75 µV
AD8605/AD8606/AD8608VS = 5 V, VCM = 0 V to 5 V 80 300 µV
−40°C < TA < +125°C 750 µV
AD8605/AD8606−40°C < TA < +85°C 50 pA
AD8605/AD8606−40°C < TA < +125°C 250 pA
AD8608−40°C < TA < +85°C 100 pA
AD8608−40°C < TA < +125°C 300 pA
Input Offset Current IOS 0.1 0.5 pA
−40°C < TA < +85°C 20 pA
−40°C < TA < +125°C 75 pA
Input Voltage Range 0 5 V
Common-Mode Rejection Ratio CMRR VCM = 0 V to 5 V 85 100 dB
−40°C < TA < +125°C 75 90 dB
Large Signal Voltage Gain AVO RL = 2 kΩ, VO = 0.5 V to 4.5 V 300 1000 V/mV
Offset Voltage Drift
AD8605/AD8606ΔVOS/ΔT −40°C < TA < +125°C 1 4.5 µV/°C
AD8608ΔVOS/ΔT −40°C < TA < +125°C 1.5 6.0 µV/°C
INPUT CAPACITANCE
Common-Mode Input Capacitance C
Differential Input Capacitance C
OUTPUT CHARACTERISTICS
Output Voltage High VOH IL = 1 mA 4.96 4.98 V
IL = 10 mA 4.7 4.79 V
−40°C < TA < +125°C 4.6 V
Output Voltage Low VOL IL = 1 mA 20 40 mV
IL= 10 mA 170 210 mV
−40°C < TA < +125°C 290 mV
Output Current I
Closed-Loop Output Impedance Z
POWER SUPPLY
Power Supply Rejection Ratio PSRR
AD8605/AD8606VS = 2.7 V to 5.5 V 80 95 dB
AD8605/AD8606 WLCSP VS = 2.7 V to 5.5 V 75 92 dB
AD8608VS = 2.7 V to 5.5 V 77 92 dB
−40°C < TA < +125°C 70 90 dB
Supply Current/Amplifier ISY I
−40°C < TA < +125°C 1.4 mA
DYNAMIC PERFORMANCE
Slew Rate SR RL = 2 kΩ, CL = 16 pF 5 V/µs
Settling Time tS To 0.01%, 0 V to 2 V step, AV = 1 <1 µs
Unity Gain Bandwidth Product GBP 10 MHz
8.8 pF
COM
2.6 pF
DIFF
±80 mA
OUT
f = 1 MHz, AV = 1 1 Ω
OUT
= 0 mA 1 1.2 mA
OUT
Rev. N | Page 4 of 24
Page 5
Data Sheet AD8605/AD8606/AD8608
Current Noise Density
in
f = 1 kHz
0.01 pA/√Hz
Parameter Symbol Conditions Min Typ Max Unit
NOISE PERFORMANCE
Peak-to-Peak Noise en p-p f = 0.1 Hz to 10 Hz 2.3 3.5 µV p-p
Voltage Noise Density en f = 1 kHz 8 12 nV/√Hz
en f = 10 kHz 6.5 nV/√Hz
Rev. N | Page 5 of 24
Page 6
AD8605/AD8606/AD8608 Data Sheet
Input Bias Current
IB
0.2
1
pA
POWER SUPPLY
Slew Rate
SR
RL = 2 kΩ, CL = 16 pF
5 V/µs
2.7 V ELECTRICAL SPECIFICATIONS
VS = 2.7 V, VCM = VS/2, TA = 25°C, unless otherwise noted.
Table 2.
Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS
Offset Voltage VOS
AD8605/AD8606 (Exce pt WLCSP) VS = 3.5 V, VCM = 3 V 20 65 µV
AD8608VS = 3.5 V, VCM = 2.7 V 20 75 µV
AD8605/AD8606/AD8608VS = 2.7 V, VCM = 0 V to 2.7 V 80 300 µV
−40°C < TA < +125°C 750 µV
AD8605/AD8606−40°C < TA < +85°C 50 pA
AD8605/AD8606−40°C < TA < +125°C 250 pA
AD8608−40°C < TA < +85°C 100 pA
AD8608−40°C < TA < +125°C 300 pA
Input Offset Current IOS 0.1 0.5 pA
−40°C < TA < +85°C 20 pA
−40°C < TA < +125°C 75 pA
Input Voltage Range 0 2.7 V
Common-Mode Rejection Ratio CMRR VCM = 0 V to 2.7 V 80 95 dB
−40°C < TA < +125°C 70 85 dB
Large Signal Voltage Gain AVO RL = 2 kΩ, VO = 0.5 V to 2.2 V 110 350 V/mV
Offset Voltage Drift
AD8605/AD8606ΔVOS/ΔT −40°C < TA < +125°C 1 4.5 µV/°C
AD8608ΔVOS/ΔT −40°C < TA < +125°C 1.5 6.0 µV/°C
INPUT CAPACITANCE
Common-Mode Input Capacitance C
Differential Input Capacitance C
OUTPUT CHARACTERISTICS
Output Voltage High VOH IL = 1 mA 2.6 2.66 V
−40°C < TA < +125°C 2.6 V
Output Voltage Low VOL IL = 1 mA 25 40 mV
−40°C < TA < +125°C 50 mV
Output Current I
Closed-Loop Output Impedance Z
8.8 pF
COM
2.6 pF
DIFF
±30 mA
OUT
f = 1 MHz, AV = 1 1.2 Ω
OUT
Power Supply Rejection Ratio PSRR
AD8605/AD8606VS = 2.7 V to 5.5 V 80 95 dB
AD8605/AD8606 WLCSP VS = 2.7 V to 5.5 V 75 92 dB
AD8608VS = 2.7 V to 5.5 V 77 92 dB
−40°C < TA < +125°C 70 90 dB
Supply Current/Amplifier I
−40°C < TA < +125°C 1.5 mA
DYNAMIC PERFORMANCE
Settling Time tS To 0.01%, 0 V to 1 V step, AV = 1 <0.5 µs
Unity Gain Bandwidth Product GBP 9 MHz
Phase Margin Φ
I
SY
M
= 0 mA 1.15 1.4 mA
OUT
50 Degrees
Rev. N | Page 6 of 24
Page 7
Data Sheet AD8605/AD8606/AD8608
Current Noise Density
in
f = 1 kHz
0.01 pA/√Hz
Parameter Symbol Conditions Min Typ Max Unit
NOISE PERFORMANCE
Peak-to-Peak Noise en p-p f = 0.1 Hz to 10 Hz 2.3 3.5 µV p-p
Voltage Noise Density en f = 1 kHz 8 12 nV/√Hz
en f = 10 kHz 6.5 nV/√Hz
Rev. N | Page 7 of 24
Page 8
AD8605/AD8606/AD8608 Data Sheet
All Packages
−65°C to +150°C
ABSOLUTE MAXIMUM RATINGS
Table 3.
Parameter Rating
Supply Voltage 6 V
Input Voltage GND to V
Differential Input Voltage 6 V
Output Short-Circuit Duration to GND Observe Derating Curves
Storage Temperature Range
All Packages −65°C to +150°C
Operating Temperature Range
All Packages −40°C to +125°C
Junction Temperature Range
Lead Temperature (Soldering, 60 sec) 300°C
S
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
θJA is specified for the worst-case conditions, that is, a device soldered in a
circuit board for surface-mount packages.
1
θJC Unit
JA
ESD CAUTION
Rev. N | Page 8 of 24
Page 9
Data Sheet AD8605/AD8606/AD8608
OFFSET VO
LTAGE (µV)
NUMBER OF AMPLIFIERS
4500
4000
0
2000
1500
1000
500
3000
2500
3500
300–200
–100
0
100
200
–300
V
S
= 5V
TA = 25°C
VCM = 0V
T
O 5V
02731-007
TCVOS (µV/°C)
12
0
4.80.4
NUMBER OF AMPLIFIERS
0.81.62.43.2
4.0
16
8
4
24
20
4.4
V
S
= 5V
T
A
= –40°C
TO +125°C
V
CM
= 2.5V
01.2
2.02.83.6
02731-008
TCVOS (µV/°C)
20
10
0
2.60.2
NUMBER OF AMPLIFIERS
0.4 0.6 0.8 1.0 1.2 1.4
1.6 1.8 2.0
14
6
2
2.2 2.4
12
16
8
4
18
0
V
S
= 5V
TA = –40°C TO +125°C
V
CM
= 2.5V
02731-009
0
02731-010
–0.30
–0.25
–0.20
–0.15
–0.10
–0.05
0.05
0.10
0.15
0.20
0.
25
0.
30
00.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VCM(V)
V
OS
(
mV)
VS = 5V
250
200
150
100
50
0
–150
–100
–50
–50–250255075100125
INPUT BIAS CURRE NT (pA)
TEMPERATURE (°C)
02731-011
VSY = 5V
V
CM
= V
SY
/2
AD8605
AD8606
AD8608
LOAD CURRENT ( mA)
1k
10
0.1
0.001100.01
OUTPUT S
A
TURA
TION VOLT
AGE (mV)
0.1
1
100
1
SINKSOURCE
VS = 5V
T
A
= 25°C
02731-012
TYPICAL PERFORMANCE CHARACTERISTICS
Figure 7. Input Offset Voltage Distribution
Figure 8. AD8608Input Offset Voltage Drift Distribution
Figure 10. Input Offset Voltage vs. Common-Mode Voltage
(200 Units, 5 Wafer Lots, Including Process Skews)
Figure 11. Input Bias Current vs. Temperature
Figure 9. AD8605/AD8606 Input Offset Voltage Drift Distribution
Figure 12. Output Saturation Voltage vs. Load Current
Rev. N | Page 9 of 24
Page 10
AD8605/AD8606/AD8608 Data Sheet
TEMPER
ATURE (°C)
5.00
4.95
4.70
OUTPUT VOLTAGE (V)
4.85
4.75
4.90
4.80
V
OH
@ 1m
A LOAD
V
S
= 5V
V
OH
@ 10mA
LOAD
–40 –25
–10 5
20
35 50
65
80 95
110
125
02731-013
0.25
0
0.15
0.05
0.20
0.10
TEMPERA
TURE (°C)
OUTPUT VOLTAGE (V)
V
OL
@ 1m
A
LOAD
VS = 5V
V
OL
@ 10m
A
LOAD
–40 –25
–10 5
20
35 50
65 80 95 110 125
02731-014
GAIN (dB)
100
80
–100
60
40
20
0
–20
–40
–60
–80
225
180
–225
135
90
45
0
–45
–90
–135
–180
PHASE (Degrees)
FREQUENCY ( Hz )
10k40M
100k1M10M
VS = ±2.5V
R
L
= 2kΩ
CL = 20pF
ΦM = 64°
02731-015
PHASE
GAIN
FREQUENCY (Hz)
6
5
0
1k10M10k
OUTPUT SWING (V p-p)
100k1M
4
3
1
2
V
S
= 5V
V
IN
= 4.9V p-p
TA = 25°C
R
L
= 2kΩ
AV = 1
02731-016
FREQUENCY
(Hz)
100
90
0
1k
100M10k
100k1M
10M
80
70
20
60
50
30
10
40
V
S
= 5V
A
V
= 100
A
V
= 1
A
V
= 10
02731-017
OUTPUT IMPEDANCE (Ω)
FREQUENCY (Hz)
10k
CMRR (dB)
100k1M
20
120
1k10M
90
80
70
60
50
40
30
110
100
VS = 5V
02731-018
Figure 13. Output Voltage Swing High vs. Temperature
Figure 14. Output Voltage Swing Low vs. Temperature
Figure 16. Closed-Loop Output Voltage Swing (FPBW)
Figure 17. Output Impedance vs. Frequency
Figure 15. Open-Loop Gain and Phase vs. Frequency
Rev. N | Page 10 of 24
Figure 18. Common-Mode Rejection Ratio (CMRR) vs. Frequency
Page 11
Data Sheet AD8605/AD8606/AD8608
FREQUENCY (Hz)
140
80
–60
1k10M10k
PSRR (dB)
100k1M
40
0
–40
100
120
60
20
–20
VS = 5V
02731-019
CAP
ACITANCE (pF)
45
40
0
101k100
SMALL SIGNAL OVERSHOOT (%)
35
30
10
25
20
15
5
VS = 5V
RL =
∞
TA = 25°C
AV = –1
+OS
–OS
02731-020
TEMPER
ATURE (°C)
2.0
0
SUPPLY CURRENT/AMPLIFIE R ( mA)
–40125–25 –1095 110
1.5
1.0
0.5
520 35 50 6580
02731-021
VS = 2.7V
VS = 5V
SUPPLY VOLTAGE (V)
1.0
0.4
0
SUPPLY CURRENT/AMPLIFIE R ( mA)
0.9
0.5
0.3
0.1
0.7
0.6
0.2
0.8
05.04.54.03.53.02.52.01.51.00.5
02731-022
TIME (1s/DIV)
VOLTAGE NOISE (1µV/DIV)
V
S
= 5V
02731-023
TIME (200ns/DIV)
VO
LTAG E ( 50mV /DIV)
02731-024
V
S
= ±2.5V
RL = 10kΩ
CL = 200pF
A
V
= 1
Figure 19. PSRR vs. Frequency
Figure 20. Small Signal Overshoot vs. Load Capacitance
Figure 22. Supply Current/Amplifier vs. Supply Voltage
Figure 23. 0.1 Hz to 10 Hz Input Voltage Noise
Figure 21. Supply Current/Amplifier vs. Temperature
Figure 24. Small Signal Transient Response
Rev. N | Page 11 of 24
Page 12
AD8605/AD8606/AD8608 Data Sheet
TIME (400ns/DIV)
VOLTAGE (1V/DIV)
VS = ±2.5V
R
L
= 10kΩ
C
L
= 200pF
A
V
= 1
02731-025
TIME (400ns/DIV)
2.5V
–50mV
0V
V
OUT
V
IN
0V
V
S
= ±2.5V
R
L
= 10kΩ
A
V
= –100
V
IN
= 50mV
02731-026
V
S
= ±2.5V
RL = 10kΩ
AV = –100
V
IN
= 50mV
TIME (1µs/DIV)
–2.5V
50mV
0V
0V
02731-027
FREQUENCY
(kHz)
36
20
4
32
28
12
8
24
16
V
S
= ±2.5V
VOLTAGE NOISE DENSITY (nV/ Hz)
01.00.90.80.70.60.50.40.3
0.2
0.1
02731-028
0
6.7
20.1
13.4
26.8
40.2
33.5
53.6
46.9
FREQUENCY (kHz)
VS = ±2.5V
VOLTAGE NOISE DENSITY (nV/ Hz)
010987654321
02731-029
0
14.9
44.7
29.8
59.6
89.4
74.5
119.2
104.3
FREQUENCY (Hz)
V
S
= ±2.5V
VOLTAGE NOISE DENSITY (nV/ Hz)
0100908070605040302010
02731-030
Figure 25. Large Signal Transient Response
Figure 26. Positive Overload Recovery
Figure 28. Voltage Noise Density vs. Frequency
Figure 29. Voltage Noise Density vs. Frequency
Figure 27. Negative Overload Recovery
Figure 30. Voltage Noise Density vs. Frequency
Rev. N | Page 12 of 24
Page 13
Data Sheet AD8605/AD8606/AD8608
1800
1600
0
NUMBER OF AMPLIFIERS
800
600
400
200
1200
1000
1400
OFFSET VOLTAGE (µV)
300–200–100
200
–300
VS = 2.7V
TA = 25°C
VCM = 0V TO 2.7V
0100
02731-031
COMMON-MODE VOLTAGE (V)
300
200
–300
0
2.7
INPUT OFFSET VOLTAGE (µV)
100
0
–200
–100
1.8
0.90
VS = 2.7V
TA = 25°C
02731-032
250
200
150
100
50
0
–150
–100
–50
–50–250
255075100125
INPUT BIAS CURRE NT (pA)
TEMPERATURE (°C)
02731-039
V
SY
= 2.7V
V
CM
= VSY/2
AD8605
AD8606
AD8608
LOAD CURRENT ( mA)
1k
10
0.1
0.001100.01
OUTPUT SATUR
ATION VOLTAGE (mV)
0.1
1
100
1
SOURCE
SINK
VS = 2.7V
T
A
= 25°C
02731-033
TEMPERATURE (°C)
2.680
2.675
2.650
5201255035
OUTPUT VOLTAGE (V)
65 80 95 110
2.665
2.655
2.670
2.660
–10–25–40
V
S
= 2.7V
V
OH
@ 1mA LOAD
02731-034
0.045
0.025
0
0.035
0.015
0.005
0.030
0.040
0.020
0.010
TEMPERATURE (°C)
5201255035
OUTPUT VOLTAGE (V)
65 80 95 110–10–25–40
V
S
= 2.7V
VOL @ 1mA LOAD
02731-035
Figure 31. Input Offset Voltage Distribution
Figure 32. Input Offset Voltage vs. Common-Mode Voltage
(200 Units, 5 Wafer Lots, Including Process Skews)
Figure 34. Output Saturation Voltage vs. Load Current
Figure 35. Output Voltage Swing High vs. Temperature
Figure 33. Input Bias Current vs. Temperature
Figure 36. Output Voltage Swing Low vs. Temperature
Rev. N | Page 13 of 24
Page 14
AD8605/AD8606/AD8608 Data Sheet
FREQUENCY ( Hz )
10k40M
100k
GAIN (dB)
100
80
–100
60
40
20
0
–20
–40
–60
–80
225
180
–225
135
90
45
0
–45
–90
–135
–180
PHASE (Degrees)
1M
10M
02731-036
V
S
= 2.7V
RL = 2kΩ
C
L
= 20pF
Φ
M
= 52.5°
PHASE
GAIN
FREQUENC
Y
(Hz)
3.0
2.5
0
1k
10M10k
OUTPUT SWING (V p-p)
100k1M
2.0
1.5
0.5
1.0
02731-037
V
S
= 2.7V
V
IN
= 2.6V p-p
T
A
= 25°C
R
L
= 2kΩ
A
V
= 1
FREQUENCY (Hz)
100
90
0
1k
100M
10k100k1M10M
80
70
20
60
50
30
10
40
A
V
= 100
A
V
= 10
A
V
= 1
VS = 2.7V
02731-038
OUTPUT IMPEDANCE (Ω)
CAPACITANCE (pF)
60
50
0
101k100
SMALL SIGNAL OVERSHOOT (%)
30
20
10
40
–OS
+OS
V
S
= 2.7V
T
A
= 25°C
A
V
= 1
02731-039
TIME (1s/DIV)
V
S
= 2.7V
VOLTAGE NOISE (1µV/ DIV)
02731-040
TIME (200ns/DIV)
VOLT
AGE (50mV/DIV)
02731-041
VS = ±1.35V
RL = 10kΩ
CL = 200pF
A
V
= 1
Figure 37. Open-Loop Gain and Phase vs. Frequency
Figure 38. Closed-Loop Output Voltage Swing vs. Frequency (FPBW)
Figure 40. Small Signal Overshoot vs. Load Capacitance
Figure 41. 0.1 Hz to 10 Hz Input Voltage Noise
Figure 39. Output Impedance vs. Frequency
Figure 42. Small Signal Transient Response
Rev. N | Page 14 of 24
Page 15
Data Sheet AD8605/AD8606/AD8608
TIME (400ns/DIV)
VOLTAGE (500mV/DIV )
VS = ±1.35V
RL = 10kΩ
CL = 200pF
AV = 1
02731-042
Figure 43. Large Signal Transient Response
Rev. N | Page 15 of 24
Page 16
AD8605/AD8606/AD8608 Data Sheet
JA
A
J
DISS
TT
P
θ
−
=
mA5≤
−
S
S
IN
R
VV
TIME (4µs/DIV)
VO
LT
AGE (2V/DIV)
V
OUT
V
IN
V
S
= ±2.5V
VIN = 6V p-p
A
V
= 1
RL = 10kΩ
02731-043
AMBIENT TEMPERATURE (°C)
1.0
0.8
0
–45
130–20
POWER DISSI
PA
TION (W)
3080105
0.6
0.4
0.2
1.7
1.8
1.6
1.4
1.2
02731-044
TSSOP-14
555
1.5
1.3
1.1
0.9
0.7
0.5
0.3
0.1
5-LEAD SO
T
-23
MSOP-8
SOIC-14
WLCSP-5
SOIC-8
FREQUENC
Y (Hz)
0.1
0.01
0.0001
2020k100
THD + NOISE ( %)
1k
0.001
10k
VSY = ±2.5V
AV = 1
BW = 80kHz
02731-045
APPLICATIONS INFORMATION
OUTPUT PHASE REVERSAL
Phase reversal is defined as a change in polarity at the output of
the amplifier when a voltage that exceeds the maximum input
common-mode voltage drives the input.
Phase reversal can cause permanent damage to the amplifier; it
can also cause system lockups in feedback loops. The AD8605
does not exhibit phase reversal even for inputs exceeding the
supply voltage by more than 2 V.
MAXIMUM POWER DISSIPATION
Power dissipated in an IC causes the die temperature to
increase, which can affect the behavior of the IC and the
application circuit performance.
The absolute maximum junction temperature of the AD8605/
AD8606/AD8608 is 150°C. Exceeding this temperature could
damage or destroy the device.
The maximum power dissipation of the amplifier is calculated
according to
Figure 44. No Phase Reversal
where:
T
T
θ
Figure 45 compares the maximum power dissipation with
temperature for the various AD860x family packages.
INPUT OVERVOLTAGE PROTECTION
The AD860x has internal protective circuitry. However, if the
voltage applied at either input exceeds the supplies by more
than 0.5 V, external resistors should be placed in series with
the inputs. The resistor values can be determined by
The remarkable low input offset current of the AD860x (<1 pA)
allows the use of larger value resistors. With a 10 kΩ resistor at
the input, the output voltage has less than 10 nV of error voltage.
A 10 kΩ resistor has less than 13 nV/√Hz of thermal noise at
room temperature.
THD + NOISE
Total harmonic distortion is the ratio of the input signal in V rms
to the total harmonics in V rms throughout the spectrum.
Harmonic distortion adds errors to precision measurements
and adds unpleasant sonic artifacts to audio systems.
The AD860x has a low total harmonic distortion. Figure 46 shows
that the AD8605 has less than 0.005% or −86 dB of THD + N
over the entire audio frequency range. The AD8605 is configured
in positive unity gain, which is the worst case, and with a load
of 10 kΩ.
is the junction temperature.
J
is the ambient temperature.
A
is the junction-to-ambient thermal resistance.
JA
Figure 45. Maximum Power Dissipation vs. Ambient Temperature
Figure 46. THD + Noise vs. Frequency
Rev. N | Page 16 of 24
Page 17
Data Sheet AD8605/AD8606/AD8608
(
)
SS
nn
TOTAL
n
TRk
R
ie
e4
2
2
,
+
+
=
()
BWeE
TOTALnn,
=
CHANNEL SEPARATION (dB)
FREQUENCY (Hz)
10M1M100k10k1k100100M
–20
0
–40
–60
–80
–100
–120
–140
–160
–180
02731-046
TIME (10µ s/DIV)
VOLT
AGE (100mV/DIV)
02731-047
VS = ±2.5V
A
V
= 1
RL = 10kΩ
C
L
= 1000pF
R
S
C
S
R
L
C
L
V+
V–
4
2
3
8
1
AD8605
V
IN
200mV
02731-049
TOTAL NOISE INCLUDING SOURCE RESISTORS
The low input current noise and input bias current of the
AD860x make it the ideal amplifier for circuits with substantial
input source resistance, such as photodiodes. Input offset voltage
increases by less than 0.5 nV per 1 kΩ of source resistance at
room temperature and increases to 10 nV at 85°C. The total
noise density of the circuit is
where:
e
is the input voltage noise density of the AD860x.
n
i
is the input current noise density of the AD860x.
n
R
is the source resistance at the noninverting terminal.
S
k is Boltzmann’s constant (1.38 × 10
T is the ambient temperature in Kelvin (T = 273 + °C).
For example, with R
= 10 kΩ, the total voltage noise density is
S
roughly 15 nV/√Hz.
For R
< 3.9 kΩ, en dominates and e
S
The current noise of the AD860x is so low that its total density
does not become a significant term unless R
The total equivalent rms noise over a specific bandwidth is
expressed as
−23
J/K).
≈ en.
n, TOTAL
is greater than 6 MΩ.
S
A snubber network, shown in Figure 49, helps reduce the signal
overshoot to a minimum and maintain stability. Although this
circuit does not recover the loss of bandwidth induced by large
capacitive loads, it greatly reduces the overshoot and ringing.
This method does not reduce the maximum output swing of the
amplifier.
Figure 47. Channel Separation vs. Frequency
where BW is the bandwidth in hertz.
Note that the previous analysis is valid for frequencies greater
than 100 Hz and assumes relatively flat noise, above 10 kHz. For
lower frequencies, flicker noise (1/f) must be considered.
CHANNEL SEPARATION
Channel separation, or inverse crosstalk, is a measure of the signal
feed from one amplifier (channel) to another on the same IC.
The AD8606 has a channel separation of greater than −160 dB
up to frequencies of 1 MHz, allowing the two amplifiers to
amplify ac signals independently in most applications.
CAPACITIVE LOAD DRIVE
The AD860x can drive large capacitive loads without oscillation.
Figure 48 shows the output of the AD8606 in response to a
200 mV input signal. In this case, the amplifier is configured
in positive unity gain, worst case for stability, while driving a
1000 pF load at its output. Driving larger capacitive loads in
unity gain can require the use of additional circuitry.
Figure 48. AD8606 Capacitive Load Drive Without Snubber
Figure 49. Snubber Network Configuration
Rev. N | Page 17 of 24
Page 18
AD8605/AD8606/AD8608 Data Sheet
TIME (10µ s/DIV)
VOLTAGE (100mV/DIV)
V
S
= ±2.5V
AV = 1
RL = 10kΩ
RS = 90Ω
C
L
= 1000pF
CS = 700pF
02731-048
C
(pF)
RS (Ω)
C
(pF)
WAVELENGTH (nm)
3500
0
350
INPUT BIAS CURRE NT (pA)
2500
3000
2000
500
1000
1500
450550650750850
1mW/cm
2
4000
4500
5000
3mW/cm
2
2mW/cm
2
02731-050
Figure 50 shows a scope of the output at the snubber circuit.
The overshoot is reduced from over 70% to less than 5%, and
the ringing is eliminated by the snubber. Optimum values for R
and C
are determined experimentally.
S
S
Figure 50. Capacitive Load Drive with Snubber
Table 5 summarizes a few optimum values for capacitive loads.
Table 5.
L
S
500 100 1000
1000 70 1000
2000 60 800
An alternate technique is to insert a series resistor inside the
feedback loop at the output of the amplifier. Typically, the value
of this resistor is approximately 100 Ω. This method also reduces
overshoot and ringing but causes a reduction in the maximum
output swing.
LIGHT SENSITIVITY
The AD8605ACB (WLCSP package option) is essentially a
silicon die with additional postfabrication dielectric and
intermetallic processing designed to contact solder bumps
on the active side of the chip. With this package type, the die
is exposed to ambient light and is subject to photoelectric
effects. Light sensitivity analysis of the AD8605ACB mounted
on standard PCB material reveals that only the input bias
current (I
illuminated directly by high intensity light. No degradation in
electrical performance is observed due to illumination by low
intensity (0.1 mW/cm
increases with increasing wavelength and intensity of incident
light; I
3 mW/cm
shown in Figure 51 are not normal for most applications, that is,
even though direct sunlight can have intensities of 50 mW/cm
office ambient light can be as low as 0.1 mW/cm
) parameter is impacted when the package is
B
2
) ambient light. Figure 51 shows that IB
can reach levels as high as 4500 pA at a light intensity of
B
2
and a wavelength of 850 nm. The light intensities
2
.
Rev. N | Page 18 of 24
2
Figure 51. AD8605ACB Input Bias Current Response to Direct Illumination of
Varying Intensity and Wavelength
When the WLCSP package is assembled on the board with the
bump side of the die facing the PCB, reflected light from the
PCB surface is incident on active silicon circuit areas and results
in the increased I
. No performance degradation occurs due to
B
illumination of the backside (substrate) of the AD8605ACB.
The AD8605ACB is particularly sensitive to incident light with
wavelengths in the near infrared range (NIR, 700 nm to 1000 nm).
Photons in this waveband have a longer wavelength and lower
energy than photons in the visible (400 nm to 700 nm) and near
ultraviolet (NUV, 200 nm to 400 nm) bands; therefore, they can
penetrate more deeply into the active silicon. Incident light with
wavelengths greater than 1100 nm has no photoelectric effect
on the AD8605ACB because silicon is transparent to wavelengths
in this range. The spectral content of conventional light sources
varies. Sunlight has a broad spectral range, with peak intensity
in the visible band that falls off in the NUV and NIR bands;
fluorescent lamps have significant peaks in the visible but not
the NUV or NIR bands.
Efforts have been made at a product level to reduce the effect of
ambient light; the under bump metal (UBM) has been designed
to shield the sensitive circuit areas on the active side (bump
side) of the die. However, if an application encounters any light
sensitivity with the AD8605ACB, shielding the bump side of the
WLCSP package with opaque material should eliminate this
effect. Shielding can be accomplished using materials such as
silica-filled liquid epoxies that are used in flip-chip underfill
techniques.
WLCSP ASSEMBLY CONSIDERATIONS
For detailed information on the WLCSP PCB assembly and
reliability, see Application Note AN-617, MicroCSP™ Wafer
,
Level Chip Scale Package.
Page 19
Data Sheet AD8605/AD8606/AD8608
R
D
I
D
C
D
50p
F
AD8605
V
OUT
PHOTODIODE
V
OS
R
F
10MΩ
C
F
10pF
02731-051
BF
D
F
OSO
IR
R
R
VE+
+=
1
FF
t
MAX
CR
f
f
π
2
=
5V
4
2
3
8
1
HEADPHONES
5V
4
6
5
8
7
C1
1µF
V1
500mV
1/2
AD8606
C3
100µF
1/2
AD8606
C4
100µF
C2
1µF
V2
500mV
02731-052
R1
20kΩ
R2
20kΩ
R7
20kΩ
R8
20kΩ
R4
20Ω
R3
1kΩ
R6
20Ω
R5
1kΩ
I-V CONVERSION APPLICATIONS
PHOTODIODE PREAMPLIFIER APPLICATIONS
The low offset voltage and input current of the AD8605 make
it an excellent choice for photodiode applications. In addition,
the low voltage and current noise make the amplifier ideal for
application circuits with high sensitivity.
Figure 52. Equivalent Circuit for Photodiode Preamp
The input bias current of the amplifier contributes an error
term that is proportional to the value of R
The offset voltage causes a dark current induced by the shunt
resistance of the Diode R
. These error terms are combined at
D
the output of the amplifier. The error voltage is written as
Typically, R
is smaller than RD, thus RF/RD can be ignored.
F
.
F
At room temperature, the AD8605 has an input bias current of
0.2 pA and an offset voltage of 100 µV. Typical values of R
are
D
in the range of 1 GΩ.
For the circuit shown in Figure 52, the output error voltage is
approximately 100 µV at room temperature, increasing to about
1 mV at 85°C.
The maximum achievable signal bandwidth is
is the unity gain frequency of the amplifier.
where f
t
AUDIO AND PDA APPLICATIONS
The low distortion and wide dynamic range of the AD860x
make it a great choice for audio and PDA applications,
including microphone amplification and line output buffering.
Figure 53 shows a typical application circuit for headphone/
line-out amplification.
R1 and R2 are used to bias the input voltage at half the supply,
which maximizes the signal bandwidth range. C1 and C2 are
used to ac couple the input signal. C1, R1, and R2 form a highpass filter whose corner frequency is 1/[2π(R1||R2)C1].
The high output current of the AD8606 allows it to drive heavy
resistive loads.
The circuit in Figure 53 is tested to drive a 16 Ω headphone. The
THD + N is maintained at approximately −60 dB throughout the
audio range.
The low offset voltage and low noise of the AD8605 make it an
ideal amplifier for instrumentation applications.
Difference amplifiers are widely used in high accuracy circuits
to improve the common-mode rejection ratio. Figure 54 shows
a simple difference amplifier. Figure 55 shows the commonmode rejection for a unity gain configuration and for a gain of 10.
Making (R4/R3) = (R2/R1) and choosing 0.01% tolerance yields
a CMRR of 74 dB and minimizes the gain error at the output.
Figure 54. Difference Amplifier, A
= 10
V
Figure 55. Difference Amplifier CMRR vs. Frequency
DAC CONVERSION
The low input bias current and offset voltage of the AD8605
make it an excellent choice for buffering the output of a current
output DAC.
Figure 56 shows a typical implementation of the AD8605 at the
output of a 12-bit DAC.
The DAC8143 output current is converted to a voltage by the
feedback resistor. The equivalent resistance at the output of the
DAC varies with the input code, as does the output capacitance.
To optimize the performance of the DAC, insert a capacitor in
the feedback loop of the AD8605 to compensate the amplifier
for the pole introduced by the output capacitance of the DAC.
Typical values for C
adjusted for the best frequency response. The total error at the
output of the op amp can be computed by
where Req is the equivalent resistance seen at the output of the
DAC. As previously mentioned, Req is code dependent and
varies with the input. A typical value for Req is 15 kΩ.
Choosing a feedback resistor of 10 kΩ yields an error of less
than 200 µV.
Figure 57 shows the implementation of a dual-stage buffer
at the output of a DAC. The first stage is used as a buffer.
Capacitor C1 with Req creates a low-pass filter, and thus,
provides phase lead to compensate for frequency response.
The second stage of the AD8606 is used to provide voltage
gain at the output of the buffer.
Grounding the positive input terminals in both stages reduces
errors due to the common-mode output voltage. Choosing R1,
R2, and R3 to match within 0.01% yields a CMRR of 74 dB and
maintains minimum gain error in the circuit.
Rev. N | Page 20 of 24
Figure 56. Simplified Circuit of the DAC8143 with AD8605 Output Buffer
Figure 59. 5-Lead Small Outline Transistor Package [SOT-23]
(RJ-5)
Dimensions shown in millimeters
Rev. N | Page 21 of 24
Page 22
AD8605/AD8606/AD8608 Data Sheet
COMPLIANT TO JEDEC STANDARDS MO-187-AA
6°
0°
0.80
0.55
0.40
4
8
1
5
0.65 BSC
0.40
0.25
1.10 MAX
3.20
3.00
2.80
COPLANARITY
0.10
0.23
0.09
3.20
3.00
2.80
5.15
4.90
4.65
PIN 1
IDENTIFIER
15° MAX
0.95
0.85
0.75
0.15
0.05
10-07-2009-B
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0
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0
Figure 60. 8-Lead Mini Small Outline Package [MSOP]
(RM-8)
Dimensions shown in millimeters
Figure 61. 8-Lead Standard Small Outline Package [SOIC_N]
Narrow Body (R-8)
Dimensions shown in millimeters and (inches)
Rev. N | Page 22 of 24
Page 23
Data Sheet AD8605/AD8606/AD8608
1.480
1.430
1.380
1.825
1.775
1.725
0.27
0.24
0.21
0.380
0.355
0.330
0.340
0.320
0.300
0.675
0.595
0.515
08-10-2012-A
BOTTOM VIEW
(BALL SIDE UP)
TOP VIEW
(BALL SIDE DOWN)
SIDE VIEW
1.00
REF
0.50
BSC
BALL A1
IDENTIFIER
SEATING
PLANE
COPLANARITY
0.05
A
123
B
C
CONTROLLING DIMENSIONSARE IN MI LLIMETERS; INCH DI M E NS IONS
(IN PARENTHESES) ARE ROUNDED-OFF MILLIMETER EQUIVALENTS FOR
REFERENCE O NLYAND ARE NOT APPROPRIATE FOR USE IN DESIGN.