Analog Devices AD8605 6 8 d Datasheet

Precision Low Noise CMOS Rail-to-Rail

FEATURES

Low offset voltage: 65 µV maximum Low input bias currents: 1 pA maximum

Low noise: 8 nV/√ Wide bandwidth: 10 MHz High open-loop gain: 120 dB Unity gain stable Single-supply operation: 2.7 V to 5.5 V MicroCSP™

GENERAL DESCRIPTION

The AD8605, AD8606, and AD86081 are single, dual, and quad rail-to-rail input and output, single-supply amplifiers. They feature very low offset voltage, low input voltage and current noise, and wide signal bandwidth. They use Analog Devices’ patented DigiTrim® trimming technique, which achieves superior precision without laser trimming.

The combination of low offsets, low noise, very low input bias currents, and high speed makes these amplifiers useful in a wide variety of applications. Filters, integrators, photodiode amplifiers, and high impedance sensors all benefit from the combination of performance features. Audio and other ac applications benefit from the wide bandwidth and low distortion. Applications for these amplifiers include optical control loops, portable and loop-powered instrumentation, and audio amplification for portable devices.

The AD8605, AD8606, and AD8608 are specified over the extended industrial temperature range (−40°C to +125°C). The AD8605 single is available in the 5-lead SOT-23 and 5-bump MicroCSP packages. The 5-bump MicroCSP offers the smallest available footprint for any surface-mount operational amplifier. The AD8606 dual is available in an 8-lead MSOP package and a narrow SOIC surface-mount package. The AD8608 quad is available in a 14-lead TSSOP and a narrow 14-lead SOIC package. MicroCSP, SOT, MSOP, and TSSOP versions are available in tape and reel only.

Input/Output Operational Amplifiers

AD8605/AD8606/AD8608

APPLICATIONS

Photodiode amplification Battery-powered instrumentation Multipole filters Sensors Barcode scanners Audio

FUNCTIONAL BLOCK DIAGRAMS

OUT

V–

AD8605

+IN

Figure 1. 5-Lead SOT-23 (RT Suffix) Figure 2. 8-Lead SOIC (R Suffix)

TOP VIEW

(BUMP SIDE DOWN)

OUT V+

135

V–

+IN –IN

AD8605 ONLY

Figure 3. 5-Bump MicroCSP

(CB Suffix)

OUT A

–IN A +IN A

V–

AD8606

Figure 5. 8-Lead MSOP (RM Suffix) Figure 6. 14-Lead TSSOP (RU Suffix)

V+

–IN

02731-D-001

02731-D-006

OUT

–IN A +IN A

OUT A

–IN A +IN A

+IN B –IN B

OUT B

1 2

AD8608

3 4

V–

AD8608

V+

8 7 6 5

V+ OUT B –IN B +IN B

OUT D –IN D +IN D V– +IN C –IN C OUT C

02731-D-005

02731-D-004

Figure 4. 14-Lead SOIC (R Suffix)

02731-D-003

UT –IN A +IN A

+IN B –IN B

UT B

V+ OUT B

–IN B +IN B

AD8608

V+

OUT D

–IN D +IN D V– +IN C –IN C

OUT C

02731-D-002

Protected by U.S. Patent No. 5,969,657; other patents pending.

Rev. D

Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners.

AD8605/AD8606/AD8608

TABLE OF CONTENTS

5 V Electrical Specifications............................................................ 3

Channel Separation.................................................................... 14

2.7 V Electrical Specifications......................................................... 5

Absolute Maximum Ratings............................................................ 6

ESD Caution.................................................................................. 6

Typical Performance Characteristics............................................. 7

Application Information................................................................ 13

Output Phase Reversal............................................................... 13

Maximum Power Dissipation ...................................................13

Input Overvoltage Protection................................................... 13

THD + Noise............................................................................... 13

Total Noise Including Source Resistors................................... 14

REVISION HISTORY

5/04—Data Sheet Changed from Rev. C to Rev. D

Updated Format............................................................. Universal

Edit to Light Sensitivity Section ...............................................16

Updated Outline Dimensions................................................... 19

Changes to Ordering Guide......................................................20

7/03—Data Sheet Changed from Rev. B to Rev. C

Changes to Features.......................................................................1

Change to General Description................................................... 1

Addition to Functional Block Diagrams ....................................1

Addition to Absolute Maximum Ratings................................... 4

Addition to Ordering Guide ........................................................4

Change to Equation In Maximum Power Dissipation

Section........................................................................................11

Added Light Sensitivity Section.................................................12

Added New Figure 8 and Renumbered Subsequent Figures .13

Added New MicroCSP Assembly Considerations Section ....13

Changes to Figure 9.....................................................................13

Change to Equation in Photodiode Preamplifier

Applications Section ................................................................13

Changes to Figure 12...................................................................14

Change to Equation in D/A Conversion Section ....................14

Updated Outline Dimensions ................................................... 15

Capacitive Load Drive ...............................................................14

Light Sensitivity .......................................................................... 15

MicroCSP Assembly Considerations....................................... 15

I-V Conversion Applications........................................................ 16

Photodiode Preamplifier Applications ....................................16

Audio and PDA Applications ................................................... 16

Instrumentation Amplifiers ...................................................... 17

D/A Conversion ......................................................................... 17

Outline Dimensions....................................................................... 18

Ordering Guide .......................................................................... 19

3/03—Data Sheet Changed from Rev. A to Rev. B

Changes to Functional Block Diagram.......................................1

Changes to Absolute Maximum Ratings.................................... 4

Changes to Ordering Guide ....................................................... 4

Changes to Figure 9 ....................................................................13

Updated Outline Dimensions.................................................... 15

11/02—Data Sheet Changed from Rev. 0 to Rev. A

Change to Electrical Characteristics........................................... 2

Changes to Absolute Maximum Ratings.................................... 4

Changes Ordering Guide .............................................................4

Change to TPC 6 ..........................................................................5

Updated Outline Dimensions.................................................... 15

Rev. D | Page 2 of 20

AD8605/AD8606/AD8608

5 V ELECTRICAL SPECIFICATIONS

Table 1. @ VS = 5 V, VCM = VS/2, TA = 25°C, unless otherwise noted.

Parameter Symbol Conditions Min Typ Max Unit

INPUT CHARACTERISTICS

Offset Voltage VOS

AD8605/AD8606 VS = 3.5 V, VCM = 3 V 20 65 µV AD8608 VS = 3.5 V, VCM = 2.7 V 20 75 µV

−40°C < TA < +125°C 750 µV Input Bias Current IB 0.2 1 pA

AD8605/AD8606 −40°C < TA < +85°C 50 pA AD8605/AD8606 −40°C < TA < +125°C 250 pA AD8608 −40°C < TA < +85°C 100 pA AD8608 −40°C < TA < +125°C 300 pA

Input Offset Current IOS 0.1 0.5 pA

−40°C < TA < +85°C 20 pA

−40°C < TA < +125°C 75 pA Input Voltage Range 0 5 V Common-Mode Rejection Ratio CMRR VCM = 0 V to 5 V 85 100 dB

−40°C < TA < +125°C 75 90 dB Large Signal Voltage Gain AVO VO = 0.5 V to 4.5 V 300 1,000 V/mV R Offset Voltage Drift

AD8605/AD8606 ∆VOS/∆T 1 4.5 µV/°C AD8608 ∆VOS/∆T 1.5 6.0 µV/°C

INPUT CAPACITANCE

Common-Mode Input Capacitance 8.8 pF Differential Input Capacitance 2.59 pF

OUTPUT CHARACTERISTICS

Output Voltage High VOH IL = 1 mA 4.96 4.98 V I

−40°C < TA < +125°C 4.6 V Output Voltage Low VOL IL = 1 mA 20 40 mV I

−40°C < TA < +125°C 290 mV Output Current I Closed-Loop Output Impedance Z

±80 mA

OUT

f = 1 MHz, AV = 1 10 Ω

OUT

POWER SUPPLY

Power Supply Rejection Ratio PSRR

AD8605/AD8606 VS = 2.7 V to 5.5 V 80 95 dB AD8608 VS = 2.7 V to 5.5 V 77 92 dB

−40°C < TA < +125°C 70 90 dB Supply Current/Amplifier ISY VO = 0 V 1 1.2 mA

−40°C < TA < +125°C 1.4 mA

DYNAMIC PERFORMANCE

Slew Rate SR RL = 2 kΩ 5 V/µs Settling Time tS To 0.01%, 0 V to 2 V step < 1 µs Full Power Bandwidth BWP < 1% distortion 360 kHz Gain Bandwidth Product GBP 10 MHz Phase Margin

= 5 V, VCM = 0 V to 5 V 80 300 µV

= 2 kΩ, VCM = 0 V

= 10 mA 4.7 4.79 V

= 10 mA 170 210 mV

65 Degrees

Rev. D | Page 3 of 20

AD8605/AD8606/AD8608

Parameter Symbol Conditions Min Typ Max Unit

NOISE PERFORMANCE

Peak-to-Peak Noise en p-p f = 0.1 Hz to 10 Hz 2.3 3.5 µV p-p Voltage Noise Density en f = 1 kHz 8 12

Voltage Noise Density en f = 10 kHz 6.5 Current Noise Density in f = 1 kHz 0.01

nV/√ nV/√ pA/√

Hz Hz Hz

Rev. D | Page 4 of 20

AD8605/AD8606/AD8608

2.7 V ELECTRICAL SPECIFICATIONS

Table 2. @ VS = 2.7 V, VCM = VS/2, TA = 25°C, unless otherwise noted.

Parameter Symbol Conditions Min Typ Max Unit

INPUT CHARACTERISTICS

Offset Voltage VOS

AD8605/AD8606 AD8608

Input Bias Current IB

AD8605/AD8606 AD8605/AD8606 AD8608 AD8608

Input Offset Current IOS

Input Voltage Range Common-Mode Rejection Ratio CMRR VCM = 0 V to 2.7 V 80 95

Large Signal Voltage Gain AVO RL = 2 kΩ, VO= 0.5 V to 2.2 V 110 350 Offset Voltage Drift

AD8605/AD8606 ∆VOS/∆T AD8608 ∆VOS/∆T

INPUT CAPACITANCE

Common-Mode Input Capacitance Differential Input Capacitance

OUTPUT CHARACTERISTICS

Output Voltage High VOH IL = 1 mA 2.6 2.66

Output Voltage Low VOL IL = 1 mA

Output Current I Closed-Loop Output Impedance Z

POWER SUPPLY

Power Supply Rejection Ratio PSRR

AD8605/AD8606 AD8608

Supply Current/Amplifier ISY VO = 0 V

DYNAMIC PERFORMANCE

Slew Rate SR RL = 2 kΩ Settling Time tS To 0.01%, 0 V to 1 V step Gain Bandwidth Product GBP Phase Margin

NOISE PERFORMANCE

VS = 3.5 V, VCM = 3 V VS = 3.5 V, VCM = 2.7 V

= 2.7 V, VCM = 0 V to 2.7 V

−40°C < T

< +125°C

−40°C < TA < +85°C

−40°C < TA < +125°C

−40°C < TA < +85°C

−40°C < TA < +125°C

−40°C < T

< +85°C

< +125°C

20 65 µV 20 75 µV 80 300 µV

750 µV

0.2 1 pA 50 pA 250 pA 100 pA 300 pA

0.1 0.5 pA 20 pA 75 pA

2.7 V

−40°C < T

< +125°C 70 85

1 4.5 µV/°C

1.5 6.0 µV/°C

8.8

2.59

−40°C < T

OUT

f = 1 MHz, AV = 1

OUT

< +125°C 2.6

< +125°C

25 40 mV

50 mV

±30 12

VS = 2.7 V to 5.5 V 80 95 VS = 2.7 V to 5.5 V 77 92

−40°C < T

< +125°C 70 90

< +125°C

1.15 1.4 mA

1.5 mA

5 < 0.5 9 50

Peak-to-Peak Noise en p-p f = 0.1 Hz to 10 Hz 2.3 3.5 µV p-p Voltage Noise Density en f = 1 kHz 8 12

Voltage Noise Density en f = 10 kHz 6.5 Current Noise Density in f = 1 kHz 0.01

dB dB V/mV

pF pF

V V

mA Ω

dB dB dB

V/µs µs MHz Degrees

nV/√

pA/√

Rev. D | Page 5 of 20

AD8605/AD8606/AD8608

ABSOLUTE MAXIMUM RATINGS

Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those listed in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

Table 3.

Parameter Rating

Supply Voltage 6 V Input Voltage GND to V Differential Input Voltage 6 V Output Short-Circuit Duration

Observe Derating Curves

to GND

Storage Temperature Range

All Packages −65°C to +150°C

Operating Temperature Range

AD8605/AD8606/AD8608 −40°C to +125°C

Junction Temperature Range

All Packages −65°C to +150°C

Lead Temperature Range

300°C

(Soldering, 60 sec)

Table 4. Package Type

Package Type θ

θJC Unit

5-Bump MicroCSP (CB) 220 220 °C/W 5-Lead SOT-23 (RT) 230 92 °C/W 8-Lead MSOP (RM) 210 45 °C/W 8-Lead SOIC (R) 158 43 °C/W 14-Lead SOIC (R) 120 36 °C/W 14-Lead TSSOP (RU) 180 35 °C/W

θJA is specified for worst-case conditions, i.e., θJA is specified for device in

socket for PDIP packages; θ board for surface-mount packages.

is specified for device soldered onto a circuit

ESD CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although this product features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.

Rev. D | Page 6 of 20

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