Analog Devices AD8603 7 9 a Datasheet

Precision Micropower Low Noise CMOS Rail-

to-Rail Input/Output Operational Amplifiers

FEATURES

Low offset voltage: 50 µV max Low input bias current: 1 pA max Single-supply operation: 1.8 V to 5 V Low noise: 22 nV/√Hz Micropower: 50 µA max Low distortion No phase reversal Unity gain stable

APPLICATIONS

Battery-powered instrumentation Multipole filters Sensors Low power ASIC input or output amplifiers

GENERAL DESCRIPTION

The AD8603/AD8607/AD8609 are, single/dual/quad micropower rail-to-rail input and output amplifiers, respectively, that features very low offset voltage as well as low input voltage and current noise.

These amplifiers use a patented trimming technique that achieves superior precision without laser trimming. The parts are fully specified to operate from 1.8 V to 5.0 V single supply or from ±0.9 V to ±2.5 V dual supply. The combination of low offsets, low noise, very low input bias currents, and low power consumption make the AD8603/AD8607/AD8609 especially useful in portable and loop-powered instrumentation.

The ability to swing rail to rail at both the input and output enables designers to buffer CMOS ADCs, DACs, ASICs, and other wide output swing devices in low power single-supply systems.

The AD8603 is available in a tiny 5-lead TSOT-23 package. The AD8607 is available in 8-lead MSOP and SOIC packages. The AD8609 is available in 14-lead TSSOP and SOIC packages.

AD8603/AD8607/AD8609

PIN CONFIGURATIONS

V+

1

OUT

AD8603

V–

2

TOP VIEW

(Not to Scale)

+IN

3

Figure 1. 5-Lead TSOT-23 (UJ Suffix)

IN A

V–

1

AD8607

45

OUT A

–

+IN A

Figure 2. 8-Lead MSOP (RM Suffix)

OUT A

1

–IN A

2

+IN A

AD8607

3

V–

4

Figure 3. 8-Lead SOIC (R Suffix)

OUT A

–

+IN A

+IN B

–

OUT B

IN A

IN B

1

AD8609

V+

7

Figure 4. 14-Lead TSSOP (RU Suffix)

1

OUT A

2

–

IN A

3

+IN A

AD8609

4

V+

5

+IN B

6

–IN B

7

OUT B

Figure 5. 14-Lead SOIC (R Suffix)

5

–IN

4

04356-0-001

8

V+ OUT B

–IN B

+IN B

04356-0-045

V+

8

OUT B

7

6

–IN B

+IN B

5

04356-0-047

OUT D

14

–

IN D

+IN D

–

V +IN C

–

IN C

8

OUT C

04356-0-044

14

OUT D

13

–IN D

12

+IN D

11

V–

10

+IN C

9

–IN C

8

OUT C

04356-0-046

Rev. A

Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners.

AD8603/AD8607/AD8609

TABLE OF CONTENTS

Specifications..................................................................................... 3

Absolute Maximum Ratings............................................................ 5

Typical Performance Characteristics ............................................. 6

Applications..................................................................................... 12

No Phase Reversal ...................................................................... 12

Input Overvoltage Protection................................................... 12

Driving Capacitive Loads .......................................................... 12

Proximity Sensors....................................................................... 13

Composite Amplifiers................................................................ 13

Battery-Powered Applications .................................................. 14

Photodiodes ................................................................................ 14

Outline Dimensions....................................................................... 15

Ordering Guide .......................................................................... 16

REVISION HISTORY

10/03—Data Sheet Changed from Rev. 0 to Rev. A

Change Page

Added AD8607 and AD8609 parts ..............................Universal

Changes to Specifications............................................................ 3

Changes to Figure 35.................................................................. 10

Added Figure 41.......................................................................... 11

Rev. A | Page 2 of 16

AD8603/AD8607/AD8609

SPECIFICATIONS

Table 1. Electrical Characteristics @ VS = 5 V, VCM = VS/2, TA = 25°C, unless otherwise noted

Parameter Symbol Conditions Min Typ Max Unit

INPUT CHARACTERISTICS

Offset Voltage VOS V –0.3 V < VCM < +5.2 V 40 300 µV –40°C < TA < +125°C, –0.3 V < VCM < +5.2 V 700 µV

Offset Voltage Drift ∆VOS/∆T –40°C < TA < +125°C 1 4.5 µV/°C

Input Bias Current IB 0.2 1 pA –40°C < TA < +85°C 50 pA –40°C < TA < +125°C 500 pA

Input Offset Current IOS 0.1 0.5 pA –40°C < TA < +85°C 50 pA –40°C < TA < +125°C 250 pA

Input Voltage Range IVR –0.3 +5.2 V

Common-Mode Rejection Ratio CMRR 0 V < VCM < 5 V 85 100 dB –40°C < TA < +125°C 80 dB

Large Signal Voltage Gain AVO R

AD8603 400 1000 V/mV AD8607/AD8609 250 450 V/mV

Input Capacitance C C

1.9 pF

DIFF

2.5 pF

CM

OUTPUT CHARACTERISTICS

Output Voltage High VOH I –40°C to +125°C 4.9 V I –40°C to +125°C 4.50 V

Output Voltage Low VOL I –40°C to +125°C 50 mV I –40°C to +125°C 330 mV

Output Current I

Closed-Loop Output Impedance Z

±80 mA

OUT

f = 10 kHz, AV = 1 36 Ω

OUT

POWER SUPPLY

Power Supply Rejection Ratio PSRR 1.8 V < VS < 5 V 80 100 dB

Supply Current/Amplifier ISY V –40°C <TA < +125°C 60 µA DYNAMIC PERFORMANCE

Slew Rate SR RL = 10 kΩ 0.1 V/µs

Settling Time 0.1% tS G= ±1, 2 V Step 23 µs

Gain Bandwidth Product GBP RL = 100 kΩ 400 kHz R

Phase Margin ØO R NOISE PERFORMANCE

Peak-to-Peak Noise e

0.1 Hz to 10 Hz 2.3 3.5 µV

n p-p

Voltage Noise Density en f = 1 kHz 25 nV/√Hz f = 10 kHz 22 nV/√Hz

Current Noise Density in f = 1 kHz 0.05 pA/√Hz

Channel Separation Cs f = 10 kHz –115 dB

f = 100 kHz –110 dB

= 3.3 V @ VCM = 0.5 V and 2.8 V 12 50 µV

S

= 10 kΩ, 0.5 V <VO < 4.5 V

L

= 1 mA 4.95 4.97 V

L

= 10 mA 4.65 4.97 V

L

= 1 mA 16 30 mV

L

= 10 mA 160 250 mV

L

= 0 V 40 50 µA

O

= 10 kΩ 316 kHz

L

= 10 kΩ, RL = 100 kΩ 70 Degrees

L

Rev. A | Page 3 of 16

AD8603/AD8607/AD8609

Table 2. Electrical Characteristics @ VS = 1.8 V, VCM = VS/2, TA = 25°C, unless otherwise noted

Parameter Symbol Conditions Min Typ Max Unit

INPUT CHARACTERISTICS

Offset Voltage VOS V –0.3 V < VCM < +1.8 V 40 300 µV –40°C < TA < +85°C, –0.3 V < VCM < +1.8 V 500 µV –40°C < TA < +125°C, –0.3 V < VCM < +1.7 V 700 µV

Offset Voltage Drift ∆VOS/∆T –40°C < TA < +125°C 1 4.5 µV/°C

Input Bias Current IB 0.2 1 pA

–40°C < TA < +85°C 50 pA –40°C < TA < +125°C 500 pA

Input Offset Current IOS 0.1 0.5 pA –40°C < TA < +85°C 50 pA –40°C < TA < +125°C 250 pA

Input Voltage Range IVR –0.3 +1.8 V

Common-Mode Rejection Ratio CMRR 0 V < VCM < 1.8 V 80 98 dB –40°C < TA < +85°C 70 dB

Large Signal Voltage Gain AVO R

AD8603 150 3000 V/mV AD8607/AD8609 100 2000 V/mV

Input Capacitance C C

2.1 pF

DIFF

3.8 pF

CM

OUTPUT CHARACTERISTICS

Output Voltage High VOH I –40°C to +125°C 1.6 V

Output Voltage Low VOL I –40°C to +125°C 80 mV

Output Current I

Closed-Loop Output Impedance Z

±7 mA

OUT

f = 10 kHz, AV = 1 36 Ω

OUT

POWER SUPPLY

Power Supply Rejection Ratio PSRR 1.8 V < VS < 5 V 80 100 dB

Supply Current/Amplifier ISY V –40°C < TA < +85°C 60 µA DYNAMIC PERFORMANCE

Slew Rate SR RL = 10 kΩ 0.1 V/µs

Settling Time 0.1% tS G= ±1, 1 V Step 9.2 µs

Gain Bandwidth Product GBP RL = 100 kΩ 385 kHz R

Phase Margin ØO R NOISE PERFORMANCE

Peak-to-Peak Noise e

0.1 Hz to 10 Hz 2.3 3.5 µV

n p-p

Voltage Noise Density en f = 1 kHz 25 nV/√Hz f = 10 kHz 22 nV/√Hz

Current Noise Density in f = 1 kHz 0.05 pA/√Hz

= 3.3 V @ VCM = 0.5 V and 2.8 V 12 50 µV

S

= 10 kΩ, 0.5 V <VO < 4.5 V

L

= 1 mA 1.65 1.72 V

L

= 1 mA 38 60 mV

L

= 0 V 40 50 µA

O

= 10 kΩ 316 kHz

L

= 10 kΩ, RL = 100 kΩ 70 Degrees

L

Channel Separation Cs f = 10 kHz –115 dB

f = 100 kHz –110 dB

Rev. A | Page 4 of 16

AD8603/AD8607/AD8609

ABSOLUTE MAXIMUM RATINGS

Table 3. AD8603/AD8607/AD8609 Stress Ratings

Parameter Rating

Supply Voltage 6 V Input Voltage GND to VS Differential Input Voltage ±6 V Output Short-Circuit Duration to GND Indefinite Storage Temperature Range

All Packages –65°C to +150°C Lead Temperature Range (Soldering, 60 Sec) 300°C Operating Temperature Range –40°C to +125°C Junction Temperature Range

All Packages –65°C to +150°C

ESD CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although these parts feature proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.

1, 2

Table 4. Package Characteristics

Package Type θ

5-Lead TSOT-23 (UJ) 207 61 °C/W 8-Lead MSOP (RM) 210 45 °C/W 8-Lead SOIC (R) 158 43 °C/W 14-Lead SOIC (R) 120 36 °C/W 14-Lead TSSOP (RU) 180 35 °C/W

1

Stresses above those listed under Absolute Maximum Ratings may cause

permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those listed in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

2

Absolute maximum ratings apply at 25°C, unless otherwise noted.

3

θJA is specified for the worst-case conditions, i.e., θJA is specified for device

soldered in circuit board for surface-mount packages.

3

θJC Unit

JA

Rev. A | Page 5 of 16