Analog Devices AD8602 Datasheet

Precision CMOS Single Supply
IN AIN A
V
OUT B IN B +IN B
V+
1
45
8
AD8602
OUT A
Rail-to-Rail Input/Output Wideband
a
FEATURES Low Offset Voltage: 500 V Max Single Supply Operation: 2.7 V to 6 V Low Supply Current: 750 A/Amplifier Wide Bandwidth: 8 MHz Slew Rate: 5 V/␮s Low Distortion No Phase Reversal Low Input Currents Unity Gain Stable
APPLICATIONS Barcode Scanners Battery-Powered Instrumentation Multipole Filters Sensors Current Sensing ASIC Input or Output Amplifier Audio
GENERAL DESCRIPTION
The AD8601 and AD8602 are single and dual rail-to-rail input and output single supply amplifiers featuring very low offset voltage and wide signal bandwidth. These amplifiers use a new, patented trimming technique that achieves superior performance without laser trimming. All are fully specified to operate from 3 V to 5 V single supply.
The combination of low offsets, very low input bias currents, and high speed make these amplifiers useful in a wide variety of applica­tions. Filters, integrators, diode amplifiers, shunt current sensors, and high impedance sensors all benefit from the combination of performance features. Audio and other ac applications benefit from the wide bandwidth and low distortion. For the most cost-sensitive applications the D grades offer this ac performance with lower dc precision at a lower price point.
Applications for these amplifiers include audio amplification for portable devices, portable phone headsets, bar code scanners, portable instruments, and multipole filters.
Operational Amplifiers
AD8601/AD8602
FUNCTIONAL BLOCK DIAGRAMS
5-Lead SOT-23
(RT Suffix)
OUT A
1
2
V
AD8601
+IN
3
8-Lead SOIC
(RM Sufx)
8-Lead SOIC
(R Sufx)
OUT A
1
IN A
2
V
AD8602
3
4
+IN A
The ability to swing rail-to-rail at both the input and output enables designers to buffer CMOS ADCs, DACs, ASICs, and other wide output swing devices in single supply systems.
The AD8601 and AD8602 are specified over the extended industrial (–40°C to +125°C) temperature range. The AD8601, single, is avail- able in the tiny 5-lead SOT-23 package. The AD8602, dual, is avail­able in 8-lead MSOP and narrow SOIC surface-mount packages.
SOT and µSOIC versions are available in tape and reel only.
V+
5
IN
4
V+
8
OUT B
7
6
IN B
+IN B
5
REV. 0
Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781/329-4700 World Wide Web Site: http://www.analog.com Fax: 781/326-8703 © Analog Devices, Inc., 2000
AD8601/AD8602–SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
(VS = 3 V, VCM = VS/2, TA = 25C unless otherwise noted)
A Grade D Grade
Parameter Symbol Conditions Min Typ Max Min Typ Max Unit
INPUT CHARACTERISTICS
Offset Voltage V
Input Bias Current I
Input Offset Current I
OS
B
OS
0 V ≤ VCM 1.3 V 80 500 6,000 µV
40°C T40°C T
0 V ≤ V
40°C T40°C T
+85°C 700 7,000 µV
A
+125°C 1,100 7,000 µV
A
1
3 V
CM
+85°C 1,800 7,000 µV
A
+125°C 2,100 7,000 µV
A
350 750 6,000 µV
0.2 60 0.2 200 pA
40°C T40°C T
+85°C 100 200 pA
A
+125°C 1,000 1,000 pA
A
0.1 30 0.1 100 pA
40°C T40°C T
+85°C 50 100 pA
A
+125°C 500 500 pA
A
Input Voltage Range 0 3 0 3 V Common-Mode Rejection Ratio CMRR V Large Signal Voltage Gain A
VO
= 0 V to 3 V 68 83 52 65 dB
CM
VO = 0.5 V to 2.5 V
= 2 k , V
R
L
= 0 V 30 100 20 60 V/mV
CM
Offset Voltage Drift ∆VOS/T22µV/°C
OUTPUT CHARACTERISTICS
Output Voltage High V
Output Voltage Low V
Output Current I Closed-Loop Output Impedance Z
OH
OL
OUT
OUT
IL = 1.0 mA 2.92 2.96 2.92 2.96 V
40°C T
+125°C 2.88 2.88 V
A
IL = 1.0 mA 20 35 20 35 mV
40°C T
+125°C50 50mV
A
±30 ±30 mA
f = 1 MHz, AV = 1 12 12
POWER SUPPLY
Power Supply Rejection Ratio PSRR VS = 2.7 V to 5.5 V 67 80 56 72 dB Supply Current/Amplier I
SY
VO = 0 V 680 1,000 680 1,000 µA –40°C TA ≤ +125°C 1,300 1,300 µA
DYNAMIC PERFORMANCE
Slew Rate SR RL = 2 k 5.2 5.2 V/µs Settling Time t
S
To 0.01% <0.5 <0.5 µs
Gain Bandwidth Product GBP 8.2 8.2 MHz Phase Margin Φo 50 50 Degrees
NOISE PERFORMANCE
Voltage Noise Density e
Current Noise Density i
NOTES
1
For VCM between 1.3 V and 1.8 V, VOS may exceed specified value.
Specications subject to change without notice.
n
e
n
n
f = 1 kHz 33 33 nV/Hz f = 10 kHz 18 18 nV/Hz
0.05 0.05 pA/Hz
–2–
REV. 0
AD8601/AD8602
ELECTRICAL CHARACTERISTICS
(VS = 5.0 V, VCM = VS/2, TA = 25C unless otherwise noted)
A Grade D Grade
Parameter Symbol Conditions Min Typ Max Min Typ Max Unit
INPUT CHARACTERISTICS
Offset Voltage V
Input Bias Current I
Input Offset Current I
OS
B
OS
0 V ≤ VCM 5 V 80 500 6,000 µV
40°C T
+125°C 1,300 7,000 µV
A
0.2 60 0.2 200 pA
40°C T40°C T
+85°C 100 200 pA
A
+125°C 1,000 1,000 pA
A
0.1 30 0.1 100 pA
40°C T40°C T
+85°C 50 100 pA
A
+125°C 500 500 pA
A
Input Voltage Range 0 5 0 5 V Common-Mode Rejection Ratio CMRR VCM = 0 V to 5 V 74 89 56 67 dB Large Signal Voltage Gain A
VO
VO = 0.5 V to 4.5 V 30 100 20 60 V/mV R
= 2 k, VCM = 0 V
L
Offset Voltage Drift ∆VOS/T22µV/°C
OUTPUT CHARACTERISTICS
Output Voltage High V
Output Voltage Low V
Output Current I Closed-Loop Output Impedance Z
OH
OL
OUT
OUT
IL = 1.0 mA 4.925 4.975 4.925 4.975 V I
= 10 mA 4.7 4.77 4.7 4.77 V
L
40°C T
+125°C 4.6 4.6 V
A
IL = 1.0 mA 15 30 15 30 mV I
= 10 mA 125 175 125 175 mV
L
40°C T
+125°C 250 250 mV
A
±50 ±50 mA
f = 1 MHz, AV = 1 10 10
POWER SUPPLY
Power Supply Rejection Ratio PSRR VS = 2.7 V to 5.5 V 67 80 56 72 dB Supply Current/Amplier I
SY
VO = 0 V 750 1,200 750 1,200 µA –40°C TA ≤ +125°C 1,500 1,500 µA
DYNAMIC PERFORMANCE
Slew Rate SR RL = 2 k 66V/µs Settling Time t
S
To 0.01% < 1.0 < 1.0 µs
Full Power Bandwidth BWp < 1% Distortion 360 360 kHz Gain Bandwidth Product GBP 8.4 8.4 MHz Phase Margin Φo 55 55 Degrees
NOISE PERFORMANCE
Voltage Noise Density e
e
Current Noise Density i
Specications subject to change without notice.
n
n
n
f = 1 kHz 33 33 nV/Hz f = 10 kHz 18 18 nV/Hz f = 1 kHz 0.05 0.05 pA/Hz
–3–REV. 0
AD8601/AD8602
WARNING!
ESD SENSITIVE DEVICE
ABSOLUTE MAXIMUM RATINGS*
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 V
Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . GND to V
S
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . ±6 V
Storage Temperature Range
R, RM, RT Packages . . . . . . . . . . . . . . . . –65°C to +150°C
Operating Temperature Range
AD8601/AD8602 . . . . . . . . . . . . . . . . . . . –40°C to +125°C
Junction Temperature Range
R, RM, RT Packages . . . . . . . . . . . . . . . . –65°C to +150°C
Lead Temperature Range (Soldering, 60 sec) . . . . . . . . 300°C
ESD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 kV HBM
*Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those listed in the operational sections of this specication is not implied. Exposure to absolute maximum rating condi­tions for extended periods may affect device reliability.
ORDERING GUIDE
Temperature Package Package Branding
Model Range Description Option Information
AD8601ART –40°C to +125°C 5-Lead SOT-23 RT-5 AAA AD8601DRT –40°C to +125°C 5-Lead SOT-23 RT-5 AAD AD8602AR –40°C to +125°C 8-Lead SOIC SO-8 AD8602DR –40°C to +125°C 8-Lead SOIC SO-8 AD8602ARM –40°C to +125°C 8-Lead MSOP RM-8 ABA AD8602DRM –40°C to +125°C 8-Lead MSOP RM-8 ABD
Package Type JA*
JC
Unit
5-Lead SOT-23 (RT) 230 92 °C/W 8-Lead SOIC (R) 158 43 °C/W 8-Lead MSOP (RM) 210 45 °C/W
*θJA is specied for worst-case conditions, i.e., θ
socket for PDIP packages; θ board for surface mount packages.
is specied for device soldered onto a circuit
JA
is specied for device in
JA
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the AD8601/AD8602 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high-energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.
–4–
REV. 0
3,000
TCVOS – V/ⴗC
60
30
0
0101
QUANTITY – Amplifiers
23456789
50
40
20
10
VS = 5V T
A
= 25C TO 85ⴗC
VS = 3V
= 25ⴗC
T
A
2,500
V
= 0V TO 3V
CM
2,000
1,500
1,000
QUANTITY – Amplifiers
500
Typical Performance Characteristics–
AD8601/AD8602
0
1.0
0.6 0.4 0.2
0.8
INPUT OFFSET VOLTAGE – mV
TPC 1. Input Offset Voltage Distribution
3,000
VS = 5V
= 25ⴗC
T
A
2,500
V
= 0V TO 5V
CM
2,000
1,500
1,000
QUANTITY – Amplifiers
500
0
1.0
0.6 0.4 0.2
0.8
INPUT OFFSET VOLTAGE – mV
TPC 2. Input Offset Voltage Distribution
60
50
40
30
20
QUANTITY – Amplifiers
10
0
0101
VS = 3V TA = 25C TO 85ⴗC
23456789
TPC 3. Input Offset Voltage Drift Distribution
0
0
TCVOS – V/C
0.2 0.4 0.6 0.8
0.2 0.4 0.6 0.8
1.0
1.0
TPC 4. Input Offset Voltage Drift Distribution
1.5 VS = 3V
= 25ⴗC
T
0
03.00.5
A
1.0 1.5 2.0 2.5
COMMON-MODE VOLTAGE – V
1.0
0.5
0.5
1.0
INPUT OFFSET VOLTAGE – mV
1.5
2.0
TPC 5. Input Offset Voltage vs. Common-Mode Voltage
1.5 VS = 5V
= 25ⴗC
T
A
1.0
0.5
0
0.5
1.0
INPUT OFFSET VOLTAGE – mV
1.5
2.0
01
2345
COMMON-MODE VOLTAGE – V
TPC 6. Input Offset Voltage vs. Common-Mode Voltage
–5–REV. 0
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