Analog Devices AD8599 Service Manual
Dual, Ultralow Distortion,
FEATURES
Low noise: 1 nV/√Hz at 1 kHz
Low distortion: −105 dB THD @ 20 kHz
<80 nV p-p input noise, 0.1 Hz to 10 Hz
Slew rate: 16 V/μs
Wide bandwidth: 10 MHz
Supply current: 4.7 mA/amp typical
Low offset voltage: 10 μV typical
CMRR: 120 dB
Unity-gain stable
±15 V operation
APPLICATIONS
Professional audio preamplifiers
ATE/precision testers
Imaging systems
Medical/physiological measurements
Precision detectors/instruments
Precision data conversion
Ultralow Noise Op Amp
AD8599
PIN CONFIGURATION
1
OUT A
–IN A
+IN A
AD8599
2
3
TOP VIEW
(Not to S cale)
–V
4
Figure 1. 8-Lead SOIC (R-8)
8
7
6
5
+V
OUT B
–IN B
+IN B
06274-054
GENERAL DESCRIPTION
The AD8599 is a dual, very low noise, low distortion operational amplifier ideal for use as a preamplifier. The low noise of
1 nV/√Hz and low harmonic distortion of −105 dB (or better)
at audio bandwidths give the AD8599 the wide dynamic range
necessary for preamps in audio, medical, and instrumentation
applications. The AD8599’s excellent slew rate of 16 V/μs and
10 MHz gain bandwidth make it highly suitable for medical
applications. The low distortion and settling time of the AD8599
make it ideal for buffering of high resolution data converters.
The AD8599 is available in an 8-Lead SOIC package and is
specified over a −40°C to +125°C temperature range.
Rev. A
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Anal og Devices for its use, nor for any infringements of patents or ot her
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700 www.analog.com
Fax: 781.461.3113 ©2007 Analog Devices, Inc. All rights reserved.
AD8599
TABLE OF CONTENTS
Features.............................................................................................. 1
Applications....................................................................................... 1
Pin Configuration............................................................................. 1
General Description......................................................................... 1
Revision History ...............................................................................2
Specifications..................................................................................... 3
Absolute Maximum Ratings............................................................ 4
REVISION HISTORY
4/07—Rev. 0 to Rev. A
Updated Layout................................................................................. 5
Changes to Figure 45 Caption....................................................... 12
Added Figure 48.............................................................................. 12
Changes to Figure 51 Caption....................................................... 13
2/07—Revision 0: Initial Version
Thermal Resistance.......................................................................4
Power Sequencing.........................................................................4
ESD Caution...................................................................................4
Typical Performance Characteristics..............................................5
Outline Dimensions....................................................................... 14
Ordering Guide .......................................................................... 14
Rev. A | Page 2 of 16
AD8599
SPECIFICATIONS
VS = ±15 V, VCM = 0 V, VO = 0 V, TA = +25°C, unless otherwise specified.
Table 1.
Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS
Offset Voltage V
OS
−40°C ≤ TA ≤ +125°C 180 μV
Offset Voltage Drift ΔVOS/ΔT −40°C ≤ TA ≤ +125°C 0.8 2.2 μV/°C
Input Bias Current I
B
−40°C ≤ TA ≤ +125°C 300 nA
Input Offset Current I
OS
−40°C ≤ TA ≤ +125°C 220 nA
Input Voltage Range IVR
Common-Mode Rejection Ratio CMRR −12.5 V ≤ VCM ≤ +12.5 V 120 140 dB
−40°C ≤ TA ≤ +125°C 115 dB
Large Signal Voltage Gain AVO R
−40°C ≤ TA ≤ +125°C 106 dB
Input Capacitance C
C
4.8 pf
DIFF
CM
OUTPUT CHARACTERISTICS
Output Voltage High V
OH
−40°C ≤ TA ≤ +125°C 12.8 V
R
−40°C ≤ TA ≤ +125°C 13.2 V
Output Voltage Low V
OL
−40°C ≤ TA ≤ +125°C −12.8 V
R
−40°C ≤ TA ≤ +125°C −13.3 V
Output Source Circuit I
Closed-Loop Output Impedance Z
SC
At 1 MHz, AV = 1 5 Ω
OUT
POWER SUPPLY
Power Supply Rejection Ratio PSRR VDD = ±18 V to ±4.5 V 120 140 dB
−40°C ≤ TA ≤ +125°C 118 dB
Supply Current per Amplifier ISY 4.7 5.7 mA
−40°C ≤ TA ≤ +125°C 6.75 mA
DYNAMIC PERFORMANCE
Slew Rate SR AV = −1, RL = 2 kΩ 16.8 V/μs
A
Settling Time ts To 0.01%, step = 10 V 2 μs
Gain Bandwidth Product GBP 10 MHz
Phase Margin
φ
M
NOISE PERFORMANCE
Peak-to-Peak Noise en p-p 0.1 Hz to 10 Hz 76 nV
Voltage Noise Density e
n
f = 10 Hz 1.5 nV/√Hz
Current Noise f = 1 kHz 1.5 pA/√Hz
Total Harmonic Distortion + Noise THD + N
Channel Separation CS f = 10 kHz −120 dB
10 120 μV
25 180 nA
25 180 nA
VDD = ±15 V −12.5 +12.5 V
≥ 600 Ω, VO = −11 V to +11 V 110 116 dB
L
4.5 pf
RL = 600 Ω 13.1 13.4 V
= 2 kΩ 13.5 13.7 V
L
RL = 600 Ω −13.2 −12.9 V
= 2 kΩ −13.5 −13.4 V
L
±52 mA
= 1, RL = 2 kΩ 15 V/μs
V
68 Degrees
f = 1 kHz 1.07 1.15 nV/√Hz
G = 1, RL ≥ 1 kΩ, f = 1 kHz, V
G = 1, R
≥ 1 kΩ, f = 20 kHz, V
L
RMS
= 3 V
RMS
= 3 V
−108 dB
−105 dB
Rev. A | Page 3 of 16
AD8599
ABSOLUTE MAXIMUM RATINGS
Table 2.
Parameter Rating
Supply Voltage ±18 V
Input Voltage GND to V
Differential Input Voltage ±1 V
Output Short-Circuit to GND Indefinite
Storage Temperature Range −65°C to +150°C
Operating Temperature Range −40°C to +125°C
Lead Temperature Range (Soldering 60 sec) 300°C
Junction Temperature 150°C
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
DD
THERMAL RESISTANCE
θJA is specified for the worst-case conditions, that is, a device
soldered in a circuit board for surface-mount packages.
Table 3. Thermal Resistance
Package Type θJA θ
8-Lead SOIC (R-8) 120 36 °C/W
Unit
JC
POWER SEQUENCING
The op amp supplies must be established simultaneously with,
or before, any input signals are applied.
If this is not possible, the input current must be limited to 10 mA.
ESD CAUTION
Rev. A | Page 4 of 16
AD8599
TYPICAL PERFORMANCE CHARACTERISTICS
NUMBER OF AMPLIFIE RS
70
60
50
40
30
20
10
MEAN = 8.23
STDEV = 24.47
MIN = –72.62
MAX = 62.09
NUMBER OF AMPL IFIERS
60
MEAN = 0.346
50
40
30
20
10
STDEV = 0.218
MIN = 0.010
MAX = 1.155
0
–75 –65 –55 –45 –35 –25 –15 –5 15 25 35 45 55 65 755
VOS (µV)
Figure 2. Input Offset Voltage Distribution, V
70
60
50
40
30
20
NUMBER OF AMPL IFIERS
10
0
–75 –65 –55 –45 –35 –25 –15 –5 15 25 35 45 55 65 755
VOS (µV)
Figure 3. Input Offset Voltage Distribution, V
60
50
40
30
VS = ±15V
= ±5 V
S
MEAN = 7.91
STDEV = 21.89
MIN = –63.02
MAX = 57.5
= ±15 V
S
0
06274-001
06274-002
0 0.2 1.6 1.8 2. 0 2.41.41.21.00.4 0.6 0.8 2. 2
Figure 5. TCV
45
40
35
30
25
20
15
NUMBER OF AMPLIFIE RS
10
5
0
0 0.2 1.6 1.8 2. 0 2.41.41.21.00.4 0.6 0.8 2.2
Figure 6. TCV
60
50
40
Distribution, VS = ±5 V, −40°C ≤ TA ≤ +125°C
OS
Distribution, VS = ±15 V, −40°C ≤ TA ≤ +125°C
OS
TCVOS (µV)
TCVOS (µV)
MEAN = 0.765
STDEV = 0.234
MIN = 0.338
MAX = 1.709
MEAN = 0.342
STDEV = 0.221
MIN = 0.013
MAX = 1.239
06274-004
06274-007
(µV)
20
OS
V
10
0
–10
–20
–50 –25 0 25 50 75 100 125 150
TEMPERATURE (° C)
Figure 4. Input Offset Voltage vs. Temperature
06274-003
Rev. A | Page 5 of 16
30
20
NUMBER OF AMPLIFIERS
10
0
0 0.2 1.6 1.8 2. 0 2.41.41.21.00.4 0.6 0.8 2. 2
Figure 7. TCV
Distribution, VS = ±15 V , −40°C ≤ TA ≤ +85°C
OS
TCVOS (µV)
06274-005
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