Professional audio preamplifiers
ATE/precision testers
Imaging systems
Medical/physiological measurements
Precision detectors/instruments
Precision data conversion
Distortion, Ultralow Noise Op Amps
AD8597/AD8599
PIN CONFIGURATIONS
1
NC
AD8597
–IN
2
+IN
3
TOP VIEW
(Not to S cale)
V–
4
NC = NO CONNECT
Figure 1. AD8597 8-Lead SOIC (R-8)
1
NC
2
–IN
+IN
V–
NOTES
1. NC = NO CONNECT.
2. IT I S RECOMMENDED T HAT THE
EXPOSED PAD BE CONNECTED
TO V–.
3
4
AD8597
TOP VIEW
Figure 2. AD8597 8-Lead LFCSP (CP-8-2)
PIN 1
INDICATOR
8
7
6
5
NC
V+
OUT
NC
8NC
7V+
6OUT
5NC
06274-060
06274-061
GENERAL DESCRIPTION
The AD8597/AD8599 are very low noise, low distortion operational amplifiers ideal for use as preamplifiers. The low noise of
1.1 nV/√Hz and low harmonic distortion of −120 dB (or better)
at audio bandwidths give the AD8597/AD8599 the wide dynamic
range necessary for preamplifiers in audio, medical, and instrumentation applications. The excellent slew rate of 14 V/μs and
10 MHz gain bandwidth make them highly suitable for medical
applications. The low distortion and fast settling time make
them ideal for buffering of high resolution data converters.
OUT A
–IN A
+IN A
–V
1
AD8599
2
3
TOP VIEW
(Not to S cale)
4
8
7
6
5
+V
OUT B
–IN B
+IN B
06274-054
Figure 3. AD8599 8-Lead SOIC (R-8)
The AD8597 is available in 8-lead SOIC and LFCSP packages,
while the AD8599 is available in an 8-lead SOIC package. They
are both specified over a −40°C to +125°C temperature range.
The AD8597 and AD8599 are members of a growing series of
low noise op amps offered by Analog Devices, Inc., (see Tabl e 1).
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
Changes to Figure 51 Caption ...................................................... 13
2/07—Revision 0: Initial Version
Rev. C | Page 2 of 20
AD8597/AD8599
SPECIFICATIONS
VSY = ±5 V, VCM = 0 V, VO = 0 V, TA = 25°C, unless otherwise specified.
Table 2.
Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS
Offset Voltage V
OS
−40°C ≤ TA ≤ +125°C 180 μV
Offset Voltage Drift ΔVOS/ΔT −40°C ≤ TA ≤ +125°C 0.8 2.2 μV/°C
Input Bias Current I
B
−40°C ≤ TA ≤ +125°C 340 nA
Input Offset Current I
OS
−40°C ≤ TA ≤ +125°C 340 nA
Input Voltage Range IVR
Common-Mode Rejection Ratio CMRR −2.0 V ≤ VCM ≤ +2.0 V 120 135 dB
−40°C ≤ TA ≤ +125°C 105 dB
Large Signal Voltage Gain AVO R
−40°C ≤ TA ≤ +125°C 100 dB
Input Capacitance
Differential Capacitance C
Common-Mode Capacitance C
15.4 pF
DIFF
CM
OUTPUT CHARACTERISTICS
Output Voltage High V
OH
−40°C ≤ TA ≤ +125°C 3.3 V
R
−40°C ≤ TA ≤ +125°C 3.5 V
Output Voltage Low V
OL
−40°C ≤ TA ≤ +125°C −3.3 V
R
−40°C ≤ TA ≤ +125°C −3.4 V
Output Short-Circuit Current I
Closed-Loop Output Impedance Z
SC
At 1 MHz, AV = 1 5 Ω
OUT
POWER SUPPLY
Power Supply Rejection Ratio PSRR VSY = ±18 V to ±4.5 V 120 140 dB
−40°C ≤ TA ≤ +125°C 118 dB
Supply Current per Amplifier ISY 4.8 5.5 mA
−40°C ≤ TA ≤ +125°C 6.5 mA
DYNAMIC PERFORMANCE
Slew Rate SR AV = −1, RL = 2 kΩ 14 V/μs
A
Settling Time tS To 0.01%, step = 10 V 2 μs
Gain Bandwidth Product GBP 10 MHz
Phase Margin ΦM 60 Degrees
NOISE PERFORMANCE
Peak-to-Peak Noise en p-p 0.1 Hz to 10 Hz 76 nV p-p
Voltage Noise Density e
n
f = 10 Hz 1.5 nV/√Hz
Correlated Current Noise f = 1 kHz 2.0 pA/√Hz
f = 10 Hz 4.2 pA/√Hz
Uncorrelated Current Noise f = 1 kHz 2.4 pA/√Hz
f = 10 Hz 5.2 pA/√Hz
Total Harmonic Distortion + Noise THD + N G = 1, RL ≥ 1 kΩ, f = 1 kHz, V
Channel Separation CS f = 10 kHz −120 dB
15 120 μV
40 210 nA
65 250 nA
−2.0 +2.0 V
≥ 600 Ω, V
L
= −11 V to +11 V 105 110 dB
O
5.5 pF
RL = 600 Ω 3.5 3.7 V
= 2 kΩ 3.7 3.8 V
L
RL = 600 Ω −3.6 −3.4 V
= 2 kΩ −3.7 −3.5 V
L
±52 mA
= 1, RL = 2 kΩ 14 V/μs
V
f = 1 kHz 1.07 1.15 nV/√Hz
Rev. C | Page 3 of 20
RMS
= 1 V
−120 dB
AD8597/AD8599
VS = ±15 V, VCM = 0 V, VO = 0 V, TA = +25°C, unless otherwise specified.
Table 3.
Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS
Offset Voltage V
OS
−40°C ≤ TA ≤ +125°C 180 μV
Offset Voltage Drift ΔVOS/ΔT −40°C ≤ TA ≤ +125°C 0.8 2.2 μV/°C
Input Bias Current I
B
−40°C ≤ TA ≤ +125°C 300 nA
Input Offset Current I
OS
−40°C ≤ TA ≤ +125°C 300 nA
Input Voltage Range IVR
Common-Mode Rejection Ratio CMRR −12.5 V ≤ VCM ≤ +12.5 V 120 135 dB
−40°C ≤ TA ≤ +125°C 115 dB
Large Signal Voltage Gain AVO R
−40°C ≤ TA ≤ +125°C 106 dB
Input Capacitance
Differential Capacitance C
Common-Mode Capacitance C
12.1 pF
DIFF
CM
OUTPUT CHARACTERISTICS
Output Voltage High V
OH
−40°C ≤ TA ≤ +125°C 12.8 V
R
−40°C ≤ TA ≤ +125°C 13.2 V
Output Voltage Low V
OL
−40°C ≤ TA ≤ +125°C −12.8 V
R
−40°C ≤ TA ≤ +125°C −13.3 V
Output Short-Circuit Current I
Closed-Loop Output Impedance Z
SC
At 1 MHz, AV = 1 5 Ω
OUT
POWER SUPPLY
Power Supply Rejection Ratio PSRR VSY = ±18 V to ±4.5 V 120 140 dB
−40°C ≤ TA ≤ +125°C 118 dB
Supply Current per Amplifier ISY 5.0 5.7 mA
−40°C ≤ TA ≤ +125°C 6.75 mA
DYNAMIC PERFORMANCE
Slew Rate SR AV = −1, RL = 2 kΩ 16 V/μs
A
Settling Time ts To 0.01%, step = 10 V 2 μs
Gain Bandwidth Product GBP 10 MHz
Phase Margin ΦM 65 Degrees
NOISE PERFORMANCE
Peak-to-Peak Noise en p-p 0.1 Hz to 10 Hz 76
Voltage Noise Density e
n
f = 10 Hz 1.5 nV/√Hz
Correlated Current Noise f = 1 kHz 1.9 pA/√Hz
f = 10 Hz 4.3 pA/√Hz
Uncorrelated Current Noise f = 1 kHz 2.3 pA/√Hz
f = 10 Hz 5.3 pA/√Hz
Total Harmonic Distortion + Noise THD + N G = 1, R
Channel Separation CS f = 10 kHz −120 dB
10 120 μV
25 200 nA
50 200 nA
−12.5 +12.5 V
≥ 600 Ω, V
L
= −11 V to +11 V 110 116 dB
O
5.1 pF
RL = 600 Ω 13.1 13.4 V
= 2 kΩ 13.5 13.7 V
L
RL = 600 Ω −13.2 −12.9 V
= 2 kΩ −13.5 −13.4 V
L
±52 mA
= 1, RL = 2 kΩ 15 V/μs
V
nV p-p
f = 1 kHz 1.07 1.15 nV/√Hz
≥ 1 kΩ, f = 1 kHz, V
L
Rev. C | Page 4 of 20
RMS
= 3 V
−120 dB
AD8597/AD8599
ABSOLUTE MAXIMUM RATINGS
Table 4.
Parameter Rating
Supply Voltage ±18 V
Input Voltage −V ≤ VIN ≤ +V
Differential Input Voltage1 ±1 V
Output Short-Circuit to GND Indefinite
Storage Temperature Range −65°C to +150°C
Operating Temperature Range −40°C to +125°C
Lead Temperature Range (Soldering 60 sec) 300°C
Junction Temperature 150°C
1
If the differential input voltage exceeds 1 V, the current should be limited
to 5 mA.
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
THERMAL RESISTANCE
θJA is specified with the device soldered on a circuit board with
its exposed paddle soldered to a pad (if applicable) on a 4-layer
JEDEC standard PCB with zero air flow.
The op amp supplies should be applied simultaneously. The
op amp supplies should be stable before any input signals are
applied. In any case, the input current must be limited to 5 mA.