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AD8541 2 4 d
Datasheet
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Analog Devices AD8541 2 4 d Datasheet

General-Purpose CMOS
NC
–IN A
+IN A
V–
V+
OUT A
NC
NC
1
2
3
4
8
7
6
5
AD8541
NC = NO CONNECT
AD8542
1
2
3
4
8
7
6
5
OUT A
–IN A
+IN A
V–
+IN B
–IN B
OUT B
V+
a
FEATURES Single-Supply Operation: 2.7 V to 5.5 V Low Supply Current: 45 ␮A/Amplifier Wide Bandwidth: 1 MHz No Phase Reversal Low Input Currents: 4 pA Unity Gain Stable Rail-to-Rail Input and Output
APPLICATIONS ASIC Input or Output Amplifier Sensor Interface Piezo Electric Transducer Amplifier Medical Instrumentation Mobile Communication Audio Output Portable Systems

GENERAL DESCRIPTION

The AD8541/AD8542/AD8544 are single, dual, and quad rail­to-rail input and output single-supply amplifiers featuring very low supply current and 1 MHz bandwidth. All are guaranteed to operate from a 2.7 V single supply as well as a 5 V supply. These parts provide 1 MHz bandwidth at a low current consumption of 45 mA per amplifier.
Very low input bias currents enable the AD8541/AD8542/AD8544 to be used for integrators, photodiode amplifiers, piezo electric sensors, and other applications with high source impedance. Sup­ply current is only 45 mA per amplifier, ideal for battery operation.
Rail-to-rail inputs and outputs are useful to designers buffering ASICs in single-supply systems. The AD8541/AD8542/AD8544 are optimized to maintain high gains at lower supply voltages, making them useful for active filters and gain stages.
The AD8541/AD8542/AD8544 are specified over the extended industrial temperature range (–40∞C to +125∞C). The AD8541 is available in 8-lead SOIC, 5-lead SC70, and 5-lead SOT-23 packages. The AD8542 is available in 8-lead SOIC, 8-lead MSOP, and 8-lead TSSOP surface-mount packages. The AD8544 is available in 14-lead narrow SOIC and 14-lead TSSOP surface­mount packages. All MSOP, SC70, and SOT versions are available in tape and reel only.
Rail-to-Rail Amplifiers
AD8541/AD8542/AD8544

PIN CONFIGURATIONS

5-Lead SC70 and SOT-23
(KS and RT Suffixes)
+IN A
Vⴚ
AD8541
1
2
3
OUT A
8-Lead SOIC
(R Suffix)
8-Lead SOIC, MSOP, and TSSOP
(R, RM, and RU Suffixes)
14-Lead SOIC and TSSOP
(R and RU Suffixes)
1
OUT A
2
–IN A
3
+IN A
AD8544
4
V+
5
+IN B
6
–IN B
7
OUT B
5
4
V+
ⴚIN A
14
13
12
11
10
9
8
OUT D
–IN D
+IN D
V–
+IN C
–IN C
OUT C
REV. D
Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781/329-4700 www.analog.com Fax: 781/326-8703 © 2004 Analog Devices, Inc. All rights reserved.
AD8541/AD8542/AD8544–SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
(VS = 2.7 V, VCM = 1.35 V, TA = 25ⴗC, unless otherwise noted.)
Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS
Offset Voltage V
Input Bias Current I
Input Offset Current I
B
OS
OS
–40∞C £ T
–40∞C £ T –40∞C £ T
–40∞C £ T –40∞C £ T
£ +125∞C7mV
A
£ +85∞C 100 pA
A
£ +125∞C 1,000 pA
A
£ +85∞C50pA
A
£ +125∞C 500 pA
A
16 mV
460 pA
0.1 30 pA
Input Voltage Range 0 2.7 V Common-Mode Rejection Ratio CMRR V
Large Signal Voltage Gain A
Offset Voltage Drift DV Bias Current Drift DI
VO
/DT –40∞C £ TA £ +125∞C4mV/∞C
OS
/DT –40∞C £ TA £ +85∞C 100 fA/∞C
B
= 0 V to 2.7 V 40 45 dB
CM
–40∞C £ T
£ +125∞C38 dB
A
RL = 100 kW , VO = 0.5 V to 2.2 V 100 500 V/mV –40∞C £ T –40∞C £ T
–40∞C £ T
£ +85∞C50 V/mV
A
£ +125∞C2 V/mV
A
£ +125∞C 2,000 fA/∞C
A
Offset Current Drift DIOS/DT –40∞C £ TA £ +125∞C25fA/∞C
OUTPUT CHARACTERISTICS
Output Voltage High V
Output Voltage Low V
Output Current I
Closed-Loop Output Impedance Z
OUT
± I
OH
OL
SC
OUT
IL = 1 mA 2.575 2.65 V –40∞C £ T
£ +125∞C 2.550 V
A
IL = 1 mA 35 100 mV –40∞C £ T V
OUT
£ +125∞C 125 mV
A
= VS – 1 V 15 mA
± 20 mA
f = 200 kHz, AV = 1 50 W
POWER SUPPLY
Power Supply Rejection Ratio PSRR VS = 2.5 V to 6 V 65 76 dB
£ +125∞C60 dB
A
Supply Current/Amplifier I
SY
–40∞C £ T VO = 0 V 38 55 mA –40∞C £ TA £ +125∞C75mA
DYNAMIC PERFORMANCE
Slew Rate SR RL = 100 kW 0.4 0.75 V/ms Settling Time t
S
To 0.1% (1 V Step) 5 ms
Gain Bandwidth Product GBP 980 kHz Phase Margin Fo63Degrees
NOISE PERFORMANCE
Voltage Noise Density e
Current Noise Density i
Specifications subject to change without notice.
n
e
n
n
f = 1 kHz 40 nV/÷Hz f = 10 kHz 38 nV/÷Hz
<0.1 pA/÷Hz
–2–
REV. D
AD8541/AD8542/AD8544

ELECTRICAL CHARACTERISTICS

(VS = 3.0 V, VCM = 1.5 V, TA = 25ⴗC, unless otherwise noted.)
Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS
Offset Voltage V
Input Bias Current I
Input Offset Current I
B
OS
OS
–40∞C £ T
–40∞C £ T –40∞C £ T
–40∞C £ T –40∞C £ T
£ +125∞C7mV
A
£ +85∞C 100 pA
A
£ +125∞C 1,000 pA
A
£ +85∞C50pA
A
£ +125∞C 500 pA
A
16 mV
460 pA
0.1 30 pA
Input Voltage Range 03V Common-Mode Rejection Ratio CMRR V
Large Signal Voltage Gain A
Offset Voltage Drift DV Bias Current Drift DI
VO
/DT –40∞C £ TA £ +125∞C4mV/∞C
OS
/DT –40∞C £ TA £ +85∞C 100 fA/∞C
B
= 0 V to 3 V 40 45 dB
CM
–40∞C £ T
£ +125∞C38 dB
A
RL = 100 kW , VO = 0.5 V to 2.2 V 100 500 V/mV –40∞C £ T –40∞C £ T
–40∞C £ T
£ +85∞C50 V/mV
A
£ +125∞C2 V/mV
A
£ +125∞C 2,000 fA/∞C
A
Offset Current Drift DIOS/DT –40∞C £ TA £ +125∞C25fA/∞C
OUTPUT CHARACTERISTICS
Output Voltage High V
Output Voltage Low V
Output Current I
Closed-Loop Output Impedance Z
± I
OH
OL
OUT
SC
OUT
IL = 1 mA 2.875 2.955 V –40∞C £ T
£ +125∞C 2.850 V
A
IL = 1 mA 32 100 mV –40∞C £ T V
OUT
£ +125∞C 125 mV
A
= VS – 1 V 18 mA
± 25 mA
f = 200 kHz, AV = 1 50 W
POWER SUPPLY
Power Supply Rejection Ratio PSRR VS = 2.5 V to 6 V 65 76 dB
£ +125∞C60 dB
A
Supply Current/Amplifier I
SY
–40∞C £ T VO = 0 V 40 60 mA –40∞C £ TA £ +125∞C75mA
DYNAMIC PERFORMANCE
Slew Rate SR R Settling Time t
S
= 100 kW 0.4 0.8 V/ms
L
To 0.01% (1 V Step) 5 ms
Gain Bandwidth Product GBP 980 kHz Phase Margin Fo64Degrees
NOISE PERFORMANCE
Voltage Noise Density e
Current Noise Density i
Specifications subject to change without notice.
n
e
n
n
f = 1 kHz 42 nV/÷Hz f = 10 kHz 38 nV/÷Hz
<0.1 pA/÷Hz
REV. D
–3–
AD8541/AD8542/AD8544–SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
(VS = 5.0 V, VCM = 2.5 V, TA = 25ⴗC, unless otherwise noted.)
Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS
Offset Voltage V
Input Bias Current I
Input Offset Current I
B
OS
OS
–40∞C £ T
–40∞C £ T –40∞C £ T
–40∞C £ T –40∞C £ T
£ +125∞C7mV
A
£ +85∞C 100 pA
A
£ +125∞C 1,000 pA
A
£ +85∞C50pA
A
£ +125∞C 500 pA
A
16 mV
460 pA
0.1 30 pA
Input Voltage Range 0 5V Common-Mode Rejection Ratio CMRR V
Large Signal Voltage Gain A
Offset Voltage Drift DV Bias Current Drift DI
VO
/DT –40∞C £ TA £ +125∞C4mV/∞C
OS
/DT –40∞C £ TA £ +85∞C 100 fA/∞C
B
= 0 V to 5 V 40 48 dB
CM
–40∞C £ T
£ +125∞C38 dB
A
RL = 100 kW , VO = 0.5 V to 2.2 V 20 40 V/mV –40∞C £ T –40∞C £ T
–40∞C £ T
£ +85∞C10 V/mV
A
£ +125∞C2 V/mV
A
£ +125∞C 2,000 fA/∞C
A
Offset Current Drift DIOS/DT –40∞C £ TA £ +125∞C25fA/∞C
OUTPUT CHARACTERISTICS
Output Voltage High V
Output Voltage Low V
Output Current I
Closed-Loop Output Impedance Z
OUT
± I
OH
OL
SC
OUT
IL = 1 mA 4.9 4.965 V –40∞C £ T
£ +125∞C 4.875 V
A
IL = 1 mA 25 100 mV –40∞C £ T V
OUT
£ +125∞C 125 mV
A
= VS – 1 V 30 mA
± 60 mA
f = 200 kHz, AV = 1 45 W
POWER SUPPLY
Power Supply Rejection Ratio PSRR VS = 2.5 V to 6 V 65 76 dB
£ +125∞C60 dB
A
Supply Current/Amplifier I
SY
–40∞C £ T VO = 0 V 45 65 mA –40∞C £ TA £ +125∞C85mA
DYNAMIC PERFORMANCE
Slew Rate SR RL = 100 kW, CL = 200 pF 0.45 0.92 V/ms Full-Power Bandwidth BW Settling Time t
S
P
1% Distortion 70 kHz To 0.1% (1 V Step) 6 ms
Gain Bandwidth Product GBP 1,000 kHz Phase Margin Fo67Degrees
NOISE PERFORMANCE
Voltage Noise Density e
Current Noise Density i
Specifications subject to change without notice.
n
e
n
n
f = 1 kHz 42 nV/÷Hz f = 10 kHz 38 nV/÷Hz
<0.1 pA/÷Hz
–4–
REV. D
AD8541/AD8542/AD8544

ABSOLUTE MAXIMUM RATINGS

1

PACKAGE INFORMATION

Supply Voltage (VS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 V
Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . GND to V
Differential Input Voltage2 . . . . . . . . . . . . . . . . . . . . . . . ± 6 V
Storage Temperature Range . . . . . . . . . . . . –65∞C to +150∞C
Operating Temperature Range . . . . . . . . . . –40∞C to +125∞C
Junction Temperature Range . . . . . . . . . . . . –65∞C to +150∞C
Lead Temperature Range (Soldering, 60 sec) . . . . . . . 300∞C
NOTES
1
Stresses above those listed under Absolute Maximum Ratings may cause perma­nent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those listed in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
2
For supplies less than 6 V, the differential input voltage is equal to ±VS.

ORDERING GUIDE

Package Type ␪JA* ␪
S
5-Lead SC70 (KS) 376 126 ∞C/W 5-Lead SOT-23 (RT) 230 146 ∞C/W 8-Lead SOIC (R) 158 43 ∞C/W 8-Lead MSOP (RM) 210 45 ∞C/W 8-Lead TSSOP (RU) 240 43 ∞C/W 14-Lead SOIC (R) 120 36 ∞C/W 14-Lead TSSOP (RU) 240 43 ∞C/W
*qJA is specified for worst-case conditions, i.e., ␪
onto a circuit board for surface mount packages.
Temperature Package Package Branding
Model Range Description Option Information
AD8541AKS-R2 –40∞C to +125∞C 5-Lead SC70 KS-5 A4B AD8541AKS-REEL7 –40∞C to +125∞C 5-Lead SC70 KS-5 A4B AD8541AKSZ-REEL7* –40∞C to +125∞C 5-Lead SC70 KS-5 A4B AD8541AR –40∞C to +125∞C 8-Lead SOIC R-8 AD8541AR-REEL –40∞C to +125∞C 8-Lead SOIC R-8 AD8541AR-REEL7 –40∞C to +125∞C 8-Lead SOIC R-8 AD8541ART-R2 –40∞C to +125∞C 5-Lead SOT-23 RT-5 A4A AD8541ART-REEL –40∞C to +125∞C 5-Lead SOT-23 RT-5 A4A AD8541ART-REEL7 –40∞C to +125∞C 5-Lead SOT-23 RT-5 A4A AD8541ARTZ-REEL* –40∞C to +125∞C 5-Lead SOT-23 RT-5 A4A AD8541ARTZ-REEL7* –40∞C to +125∞C 5-Lead SOT-23 RT-5 A4A AD8542AR –40∞C to +125∞C 8-Lead SOIC R-8 AD8542AR-REEL –40∞C to +125∞C 8-Lead SOIC R-8 AD8542AR-REEL7 –40∞C to +125∞C 8-Lead SOIC R-8 AD8542ARZ* –40∞C to +125∞C 8-Lead SOIC R-8 AD8542ARZ-REEL* –40∞C to +125∞C 8-Lead SOIC R-8 AD8542ARZ-REEL7* –40∞C to +125∞C 8-Lead SOIC R-8 AD8542ARM-R2 –40∞C to +125∞C 8-Lead MSOP RM-8 AVA AD8542ARM-REEL –40∞C to +125∞C 8-Lead MSOP RM-8 AVA AD8542ARU –40∞C to +125∞C 8-Lead TSSOP RU-8 AD8542ARU-REEL –40∞C to +125∞C 8-Lead TSSOP RU-8 AD8542ARUZ* –40∞C to +125∞C 8-Lead TSSOP RU-8 AD8542ARUZ-REEL* –40∞C to +125∞C 8-Lead TSSOP RU-8 AD8544AR –40∞C to +125∞C 14-Lead SOIC R-14 AD8544AR-REEL –40∞C to +125∞C 14-Lead SOIC R-14 AD8544AR-REEL7 –40∞C to +125∞C 14-Lead SOIC R-14 AD8544ARZ* –40∞C to +125∞C 14-Lead SOIC R-14 AD8544ARZ-REEL* –40∞C to +125∞C 14-Lead SOIC R-14 AD8544ARZ-REEL7* –40∞C to +125∞C 14-Lead SOIC R-14 AD8544ARU –40∞C to +125∞C 14-Lead TSSOP RU-14 AD8544ARU-REEL –40∞C to +125∞C 14-Lead TSSOP RU-14 AD8544ARUZ* –40∞C to +125∞C 14-Lead TSSOP RU-14 AD8544ARUZ-REEL* –40∞C to +125∞C 14-Lead TSSOP RU-14
*Z = Pb-free part.
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the AD8541/AD8542/AD8544 feature proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.
JC
is specified for device soldered
JA
WARNING!
ESD SENSITIVE DEVICE
Unit
REV. D
–5–
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