Analog Devices AD8541, AD8542, AD8544 Service Manual

General-Purpose CMOS

FEATURES

Single-supply operation: 2.7 V to 5.5 V Low supply current: 45 μA/amplifier Wide bandwidth: 1 MHz No phase reversal Low input currents: 4 pA Unity gain stable Rail-to-rail input and output

APPLICATIONS

ASIC input or output amplifiers Sensor interfaces Piezoelectric transducer amplifiers Medical instrumentations Mobile communications Audio outputs Portable systems

GENERAL DESCRIPTION

The AD8541/AD8542/AD8544 are single, dual, and quad railto-rail input and output single-supply amplifiers featuring very low supply current and 1 MHz bandwidth. All are guaranteed to operate from a 2.7 V single supply as well as a 5 V supply. These parts provide 1 MHz bandwidth at a low current consumption of 45 A per amplifier.

Very low input bias currents enable the AD8541/AD8542/AD8544 to be used for integrators, photodiode amplifiers, piezoelectric sensors, and other applications with high source impedance. The supply current is only 45 A per amplifier, ideal for battery operation.

Rail-to-rail inputs and outputs are useful to designers buffering ASICs in single-supply systems. The AD8541/AD8542/AD8544 are optimized to maintain high gains at lower supply voltages, making them useful for active filters and gain stages.

The AD8541/AD8542/AD8544 are specified over the extended industrial temperature range (–40°C to +125°C). The AD8541 is available in 8-lead SOIC, 5-lead SC70, and 5-lead SOT-23 packages. The AD8542 is available in 8-lead SOIC, 8-lead MSOP, and 8-lead TSSOP surface-mount packages. The AD8544 is available in 14-lead narrow SOIC and 14-lead TSSOP surface-mount packages. All MSOP, SC70, and SOT versions are available in tape and reel only.

Rail-to-Rail Amplifiers

AD8541/AD8542/AD8544

PIN CONFIGURATIONS

+IN A

V–

AD8541

1

2

3

OUT A

Figure 1. 5-Lead SC70 and 5-Lead SOT-23

(KS and R

1

NC

AD8541

2

–IN A

3

+IN A

4

V–

NC = NO CONNECT

Figure 2. 8-Lead SOIC

(R Suffix)

OUT A

–IN A

+IN A

V–

AD8542

1

2

3

4

Figure 3. 8-Lead SOIC, 8-Lead MSOP, and 8-Lead TSSOP

(R, RM, and RU Suffixes)

1

OUT A

2

–IN A

3

+IN A

AD8544

4

V+

5

+IN B

6

–IN B

7

OUT B

Figure 4. 14-Lead SOIC and 14-Lead TSSOP

(R and RU Suffixes)

5

4

J Suffixes)

8

7

6

5

V+

–IN A

NC

V+

OUT A

NC

8

7

6

5

14

13

12

11

10

9

8

V+

OUT B

–IN B

+IN B

OUT D

–IN D

+IN D

V–

+IN C

–IN C

OUT C

00935-001

00935-002

00935-003

00935-004

Rev. E

Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Anal og Devices for its use, nor for any infringements of patents or ot her rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners.

AD8541/AD8542/AD8544

TABLE OF CONTENTS

Features.............................................................................................. 1

Applications....................................................................................... 1

General Description ......................................................................... 1

Pin Configurations ........................................................................... 1

Revision History ............................................................................... 2

Specifications..................................................................................... 3

Electrical Characteristics ............................................................. 3

Absolute Maximum Ratings............................................................ 6

Thermal Resistance ...................................................................... 6

ESD Caution.................................................................................. 6

REVISION HISTORY

1/07—Rev. D to Rev. E

Updated Format ..................................................................Universal

Changes to Photodiode Application Section ..............................14

Changes to Ordering Guide.......................................................... 17

8/04—Rev. C to Rev. D

Changes to Ordering Guide............................................................ 5

Changes to Figure 3........................................................................ 10

Updated Outline Dimensions....................................................... 12

1/03—Rev. B to Rev. C

Updated Format ..................................................................Universal

Changes to General Description .................................................... 1

Changes to Ordering Guide............................................................ 5

Changes to Outline Dimensions................................................... 12

Typical Performance Characteristics ..............................................7

Theory of Operation ...................................................................... 12

Notes on the AD854x Amplifiers............................................. 12

Applications..................................................................................... 13

Notch Filter ................................................................................. 13

Comparator Function................................................................ 13

Photodiode Application ............................................................ 14

Outline Dimensions....................................................................... 15

Ordering Guide .......................................................................... 17

Rev. E | Page 2 of 20

AD8541/AD8542/AD8544

SPECIFICATIONS

ELECTRICAL CHARACTERISTICS

VS = 2.7 V, VCM = 1.35 V, TA = 25°C, unless otherwise noted.

Table 1.

Parameter Symbol Conditions Min Typ Max Unit

INPUT CHARACTERISTICS

Offset Voltage VOS 1 6 mV –40°C ≤ TA ≤ +125°C 7 mV Input Bias Current IB 4 60 pA –40°C ≤ TA ≤ +85°C 100 pA –40°C ≤ TA ≤ +125°C 1000 pA Input Offset Current IOS 0.1 30 pA –40°C ≤ TA ≤ +85°C 50 pA –40°C ≤ TA ≤ +125°C 500 pA Input Voltage Range 0 2.7 V Common-Mode Rejection Ratio CMRR VCM = 0 V to 2.7 V 40 45 dB –40°C ≤ TA ≤ +125°C 38 dB Large Signal Voltage Gain AVO RL = 100 kΩ , VO = 0.5 V to 2.2 V 100 500 V/mV –40°C ≤ TA ≤ +85°C 50 V/mV –40°C ≤ TA ≤ +125°C 2 V/mV Offset Voltage Drift ΔVOS/ΔT –40°C ≤ TA ≤ +125°C 4 μV/°C Bias Current Drift ΔIB/ΔT –40°C ≤ TA ≤ +85°C 100 fA/°C –40°C ≤ TA ≤ +125°C 2000 fA/°C Offset Current Drift ΔIOS/ΔT –40°C ≤ TA ≤ +125°C 25 fA/°C

OUTPUT CHARACTERISTICS

Output Voltage High VOH IL = 1 mA 2.575 2.65 V –40°C ≤ TA ≤ +125°C 2.550 V Output Voltage Low VOL IL = 1 mA 35 100 mV –40°C ≤ TA ≤ +125°C 125 mV Output Current I ±ISC ±20 mA Closed-Loop Output Impedance Z

POWER SUPPLY

Power Supply Rejection Ratio PSRR VS = 2.5 V to 6 V 65 76 dB –40°C ≤ TA ≤ +125°C 60 dB Supply Current/Amplifier ISY VO = 0 V 38 55 μA

–40°C ≤ TA ≤ +125°C 75 μA DYNAMIC PERFORMANCE

Slew Rate SR RL = 100 kΩ 0.4 0.75 V/μs Settling Time tS To 0.1% (1 V step) 5 μs Gain Bandwidth Product GBP 980 kHz Phase Margin Φo 63 Degrees

NOISE PERFORMANCE

Voltage Noise Density en f = 1 kHz 40 nV/√Hz e Current Noise Density in <0.1 pA/√Hz

V

OUT

f = 200 kHz, AV = 1 50 Ω

OUT

f = 10 kHz 38 nV/√Hz

n

= VS – 1 V 15 mA

OUT

Rev. E | Page 3 of 20

AD8541/AD8542/AD8544

VS = 3.0 V, VCM = 1.5 V, TA = 25°C, unless otherwise noted.

Table 2.

Parameter Symbol Conditions Min Typ Max Unit

INPUT CHARACTERISTICS

Offset Voltage VOS 1 6 mV –40°C ≤ TA ≤ +125°C 7 mV Input Bias Current IB 4 60 pA –40°C ≤ TA ≤ +85°C 100 pA –40°C ≤ TA ≤ +125°C 1000 pA Input Offset Current IOS 0.1 30 pA –40°C ≤ TA ≤ +85°C 50 pA –40°C ≤ TA ≤ +125°C 500 pA Input Voltage Range 0 3 V Common-Mode Rejection Ratio CMRR VCM = 0 V to 3 V 40 45 dB –40°C ≤ TA ≤ +125°C 38 dB Large Signal Voltage Gain AVO RL = 100 kΩ , VO = 0.5 V to 2.2 V 100 500 V/mV –40°C ≤ TA ≤ +85°C 50 V/mV –40°C ≤ TA ≤ +125°C 2 V/mV Offset Voltage Drift ΔVOS/ΔT –40°C ≤ TA ≤ +125°C 4 μV/°C Bias Current Drift ΔIB/ΔT –40°C ≤ TA ≤ +85°C 100 fA/°C –40°C ≤ TA ≤ +125°C 2000 fA/°C Offset Current Drift ΔIOS/ΔT –40°C ≤ TA ≤ +125°C 25 fA/°C

OUTPUT CHARACTERISTICS

Output Voltage High VOH IL = 1 mA 2.875 2.955 V –40°C ≤ TA ≤ +125°C 2.850 V Output Voltage Low VOL IL = 1 mA 32 100 mV –40°C ≤ TA ≤ +125°C 125 mV Output Current I ±ISC ±25 mA Closed-Loop Output Impedance Z

POWER SUPPLY

Power Supply Rejection Ratio PSRR VS = 2.5 V to 6 V 65 76 dB –40°C ≤ TA ≤ +125°C 60 dB

Supply Current/Amplifier ISY VO = 0 V 40 60 μA –40°C ≤ TA ≤ +125°C 75 μA DYNAMIC PERFORMANCE

Slew Rate SR RL = 100 kΩ 0.4 0.8 V/μs

Settling Time tS To 0.01% (1 V step) 5 μs

Gain Bandwidth Product GBP 980 kHz

Phase Margin Φo 64 Degrees NOISE PERFORMANCE

Voltage Noise Density en f = 1 kHz 42 nV/√Hz

e

Current Noise Density in <0.1 pA/√Hz

V

OUT

f = 200 kHz, AV = 1 50 Ω

OUT

f = 10 kHz 38 nV/√Hz

n

= VS – 1 V 18 mA

OUT

Rev. E | Page 4 of 20

AD8541/AD8542/AD8544

VS = 5.0 V, VCM = 2.5 V, TA = 25°C, unless otherwise noted.

Table 3.

Parameter Symbol Conditions Min Typ Max Unit

INPUT CHARACTERISTICS

Offset Voltage VOS 1 6 mV –40°C ≤ TA ≤ +125°C 7 mV Input Bias Current IB 4 60 pA –40°C ≤ TA ≤ +85°C 100 pA –40°C ≤ TA ≤ +125°C 1000 pA Input Offset Current IOS 0.1 30 pA –40°C ≤ TA ≤ +85°C 50 pA –40°C ≤ TA ≤ +125°C 500 pA Input Voltage Range 0 5 V Common-Mode Rejection Ratio CMRR VCM = 0 V to 5 V 40 48 dB –40°C ≤ TA ≤ +125°C 38 dB Large Signal Voltage Gain AVO RL = 100 kΩ , VO = 0.5 V to 2.2 V 20 40 V/mV –40°C ≤ TA ≤ +85°C 10 V/mV –40°C ≤ TA ≤ +125°C 2 V/mV Offset Voltage Drift ΔVOS/ΔT –40°C ≤ TA ≤ +125°C 4 μV/°C Bias Current Drift ΔIB/ΔT –40°C ≤ TA ≤ +85°C 100 fA/°C –40°C ≤ TA ≤ +125°C 2000 fA/°C Offset Current Drift ΔIOS/ΔT –40°C ≤ TA ≤ +125°C 25 fA/°C

OUTPUT CHARACTERISTICS

Output Voltage High VOH IL = 1 mA 4.9 4.965 V –40°C ≤ TA ≤ +125°C 4.875 V Output Voltage Low VOL IL = 1 mA 25 100 mV –40°C ≤ TA ≤ +125°C 125 mV Output Current I ±ISC ±60 mA Closed-Loop Output Impedance Z

POWER SUPPLY

Power Supply Rejection Ratio PSRR VS = 2.5 V to 6 V 65 76 dB –40°C ≤ TA ≤ +125°C 60 dB Supply Current/Amplifier ISY VO = 0 V 45 65 μA –40°C ≤ TA ≤ +125°C 85 μA

DYNAMIC PERFORMANCE

Slew Rate SR RL = 100 kΩ, CL = 200 pF 0.45 0.92 V/μs Full-Power Bandwidth BWP 1% distortion 70 kHz Settling Time tS To 0.1% (1 V step) 6 μs Gain Bandwidth Product GBP 1000 kHz Phase Margin Φo 67 Degrees

NOISE PERFORMANCE

Voltage Noise Density en f = 1 kHz 42 nV/√Hz e Current Noise Density in <0.1 pA/√Hz

V

OUT

f = 200 kHz, AV = 1 45 Ω

OUT

f = 10 kHz 38 nV/√Hz

n

= VS – 1 V 30 mA

OUT

Rev. E | Page 5 of 20

AD8541/AD8542/AD8544

ABSOLUTE MAXIMUM RATINGS

Table 4.

Parameter Rating

Supply Voltage (VS) 6 V Input Voltage GND to VS Differential Input Voltage1 ±6 V Storage Temperature Range −65°C to +150°C Operating Temperature Range −40°C to +125°C Junction Temperature Range −65°C to +150°C Lead Temperature (Soldering, 60 sec) 300°C

1

For supplies less than 6 V, the differential input voltage is equal to ±VS.

Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

THERMAL RESISTANCE

θJA is specified for the worst-case conditions, that is, a device soldered in a circuit board for surface-mount packages.

Table 5.

Package Type θJA θ

5-Lead SC70 (KS) 376 126 °C/W 5-Lead SOT-23 (RJ) 230 146 °C/W 8-Lead SOIC (R) 158 43 °C/W 8-Lead MSOP (RM) 210 45 °C/W 8-Lead TSSOP (RU) 240 43 °C/W 14-Lead SOIC (R) 120 36 °C/W 14-Lead TSSOP (RU) 240 43 °C/W

Unit

JC

ESD CAUTION

Rev. E | Page 6 of 20