Low offset voltage: 13 μV maximum
Input offset drift: 0.03 μV/°C
Single-supply operation: 2.7 V to 5.5 V
High gain, CMRR, and PSRR
Low input bias current: 25 pA
Low supply current: 180 μA
APPLICATIONS
Mobile communications
Portable instrumentation
Battery-powered devices
Sensor interfaces
Temperature measurement
PIN CONFIGURATIONS
OUT
1
AD8538
V–
2
TOP VIEW
(Not to Scale)
+IN
3
Figure 1. 5-Lead TSOT-23 (UJ-5)
NC
1
AD8538
−IN
2
3
+IN
TOP VIEW
(Not to Scale)
4
V−
NC = NO CONNECT
Figure 2. 8-Lead SOIC_N (R-8)
V+
5
–IN
4
06741-002
NC
8
V+
7
6
OUT
5
NC
06741-001
Electronic scales
GENERAL DESCRIPTION
The AD8538/AD8539 are very high precision amplifiers featuring
extremely low offset voltage, low input bias current, and low power
consumption. The supply current is less than 215 μA maximujm
per amplifier at 5.0 V. Operation is fully specified from 2.7 V to
1
OUT A
–IN A
+IN A
V–
AD8539
2
3
TOP VIEW
(Not to Scale)
4
Figure 3. 8-Lead SOIC_N (R-8)
8
7
6
5
V+
OUT B
–IN B
+IN B
06741-033
5.0 V single supply (±1.35 V to ±2.5 V dual supply).
The AD8538/AD8539 operate at very low power making these
amplifiers ideal for battery-powered devices and portable
equipment.
The AD8538/AD8539 are specified over the extended industrial
temperature range (−40°C to +125°C). The AD8538 amplifier is
1
OUT A
–IN A
+IN A
V–
AD8539
2
TOP VIEW
3
(Not to Scale)
4
Figure 4. 8-Lead MSOP (RM-8)
8
7
6
5
V+
OUT B
–IN B
+IN B
06741-034
available in 5-lead TSOT-23, and 8-lead, narrow body SOIC
packages, and the AD8539 amplifier is available in 8-lead, narrow
body SOIC and 8-lead MSOP.
Rev. A
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Anal og Devices for its use, nor for any infringements of patents or ot her
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
Changes to Ordering Guide.......................................................... 21
10/05—Revision 0: Initial Version
Rev. A | Page 2 of 24
AD8538/AD8539
SPECIFICATIONS
AD8538 ELECTRICAL SPECIFICATIONS
@ VS = 5.0 V, VCM = 2.5 V, VO = 2.5 V, TA = 25°C, unless otherwise specified.
Table 1.
Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS
Offset Voltage V
OS
−40°C ≤ TA ≤ +125°C 30 µV
Input Bias Current I
B
−40°C ≤ TA ≤ +85°C 35 100 pA
−40°C ≤ TA ≤ +125°C 0.7 1.0 nA
Input Offset Current I
OS
−40°C ≤ TA ≤ +125°C 150 pA
Input Voltage Range 0 5 V
Common-Mode Rejection Ratio CMRR VCM = 0 V to 5 V 115 150 dB
−40°C ≤ TA ≤ +125°C, VCM = 0.2 V to 4.8 V 100 135 dB
Large Signal Voltage Gain A
VO
−40°C ≤ TA ≤ +125°C 110 135 dB
Offset Voltage Drift
ΔV
OS
OUTPUT CHARACTERISTICS
Output Voltage High V
OH
−40°C ≤ TA ≤ +125°C, RL = 100 kΩ to ground 4.98 V
R
−40°C ≤ TA ≤ +125°C, RL = 10 kΩ to ground 4.94 V
Output Voltage Low V
OL
−40°C ≤ TA ≤ +125°C, RL = 100 kΩ to V+ 2.8 7 mV
R
−40°C ≤ TA ≤ +125°C, RL = 10 kΩ to V+ 20 30 mV
Short-Circuit Limit I
SC
POWER SUPPLY
Power Supply Rejection Ratio PSRR VS = 2.7 V to 5.0 V 105 125 dB
−40°C ≤ TA ≤ +125°C 100 125 dB
Supply Current/Amplifier I
SY
−40°C ≤ TA ≤ +125°C 190 215 µA
DYNAMIC PERFORMANCE
Slew Rate SR RL =10 kΩ 0.4 V/µs
Settling Time 0.01% t
S
Overload Recovery Time 0.05 ms
Gain Bandwidth Product GBP 430 kHz
Phase Margin Ø
M
NOISE PERFORMANCE
Voltage Noise e
Voltage Noise Density e
n p-p
n
5 13 µV
15 25 pA
20 50 pA
RL = 10 kΩ, VO = 0.1 V to 4.9 V 115 141 dB
/ΔT
−40°C ≤ T
≤ +125°C 0.03 0.1 µV/°C
A
RL = 100 kΩ to ground 4.99 4.998 V
= 10 kΩ to ground 4.95 4.970 V
L
RL = 100 kΩ to V+ 1.9 5 mV
= 10 kΩ to V+ 17 20 mV
L
±25 mA
IO = 0 150 180 µA
G = ±1, 2 V step, CL = 20 pF, RL = 1 kΩ 10 s
RL = 10 kΩ, RL = 100 kΩ, CL = 20 pF 65 Degrees
f = 0.1 Hz to 10 Hz 2.0 µV p-p
f = 1 kHz 50
nV/√Hz
Rev. A | Page 3 of 24
AD8538/AD8539
@ VS = 2.7 V, VCM = 1.35 V, VO = 1.35 V, TA = 25°C, unless otherwise specified.
Table 2.
Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS
Offset Voltage V
OS
−40°C ≤ TA ≤ +125°C 30 µV
Input Bias Current I
B
−40°C ≤ TA ≤ +85°C 35 100 pA
−40°C ≤ TA ≤ +125°C 0.7 1.0 nA
Input Offset Current I
OS
−40°C ≤ TA ≤ +125°C 150 pA
Input Voltage Range 0 2.7 V
Common-Mode Rejection Ratio CMRR VCM = 0 V to 2.5 V 110 140 dB
−40°C ≤ TA ≤ +125°C 100 135 dB
Large Signal Voltage Gain A
VO
−40°C ≤ TA ≤ +125°C 105 135 dB
Offset Voltage Drift
ΔV
OS
OUTPUT CHARACTERISTICS
Output Voltage High V
OH
−40°C ≤ TA ≤ +125°C, RL = 100 kΩ to ground 2.68 V
R
−40°C ≤ TA ≤ +125°C, RL = 10 kΩ to ground 2.66 V
Output Voltage Low V
OL
−40°C ≤ TA ≤ +125°C, RL = 100 kΩ to V+ 2.4 5 mV
R
−40°C ≤ TA ≤ +125°C, RL = 10 kΩ to V+ 20 25 mV
Short-Circuit Limit I
SC
POWER SUPPLY
Power Supply Rejection Ratio PSRR VS = 2.7 V to 5.5 V 105 125 dB
−40°C ≤ TA ≤ +125°C 100 125 dB
Supply Current/Amplifier I
SY
−40°C ≤ TA ≤ +125°C 190 215 µA
DYNAMIC PERFORMANCE
Slew Rate SR RL = 10 kΩ 0.35 V/µs
Settling Time 0.01% t
S
Overload Recovery Time 0.05 ms
Gain Bandwidth Product GBP 430 kHz
Phase Margin Ø
M
NOISE PERFORMANCE
Voltage Noise e
Voltage Noise Density e
n p-p
n
5 13 µV
15 25 pA
20 50 pA
RL = 10 kΩ, VO = 0.1 V to 1.7 V 110 140 dB
/ΔT
−40°C ≤ T
≤ +125°C 0.03 0.1 µV/°C
A
RL = 100 kΩ to ground 2.68 2.698 V
= 10 kΩ to ground 2.67 2.68 V
L
RL = 100 kΩ to V+ 1.7 5 mV
= 10 kΩ to V+ 14 20 mV
L
±8 mA
IO = 0 150 180 µA
G = ±1, 1 V step, CL = 20 pF, RL = 1 kΩ 5 s
RL = 10 kΩ, RL = 100 kΩ, CL = 20 pF 65 Degrees
f = 0.1 Hz to 10 Hz 2.0 µV p-p
f = 1 kHz 50
nV/√Hz
Rev. A | Page 4 of 24
AD8538/AD8539
AD8539 ELECTRICAL SPECIFICATIONS
@ VS = 5.0 V, VCM = 2.5 V, VO = 2.5 V, TA = 25°C, unless otherwise specified.
Table 3.
Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS
Offset Voltage V
OS
−40°C ≤ TA ≤ +125°C 30 µV
Input Bias Current I
B
−40°C ≤ TA ≤ +85°C 35 125 pA
−40°C ≤ TA ≤ +125°C 0.7 1.0 nA
Input Offset Current I
OS
−40°C ≤ TA ≤ +125°C 400 pA
Input Voltage Range 0 5 V
−40°C ≤ TA ≤ +125°C 0.2 4.8 V
Common-Mode Rejection Ratio CMRR VCM = 0 V to 5 V 115 135 dB
−40°C ≤ TA ≤ +125°C, VCM = 0.2 V to 4.8 V 100 130 dB
Large Signal Voltage Gain A
VO
−40°C ≤ TA ≤ +125°C 110 125 dB
Offset Voltage Drift
ΔV
OS
OUTPUT CHARACTERISTICS
Output Voltage High V
OH
−40°C ≤ TA ≤ +125°C, RL = 100 kΩ to ground 4.98 V
R
−40°C ≤ TA ≤ +125°C, RL = 10 kΩ to ground 4.94 V
Output Voltage Low V
OL
−40°C ≤ TA ≤ +125°C, RL = 100 kΩ to V+ 6 8 mV
R
−40°C ≤ TA ≤ +125°C, RL = 10 kΩ to V+ 24 30 mV
Short-Circuit Limit I
SC
POWER SUPPLY
Power Supply Rejection Ratio PSRR VS = 2.7 V to 5.0 V 105 125 dB
−40°C ≤ TA ≤ +125°C 100 125 dB
Supply Current/Amplifier I
SY
−40°C ≤ TA ≤ +125°C 225 µA
DYNAMIC PERFORMANCE
Slew Rate SR RL =10 kΩ 0.4 V/µs
Settling Time 0.01% t
S
Overload Recovery Time 0.05 ms
Gain Bandwidth Product GBP 430 kHz
Phase Margin Ø
M
NOISE PERFORMANCE
Voltage Noise e
Voltage Noise Density e
n p-p
n
5 15 µV
15 60 pA
20 70 pA
RL = 10 kΩ, VO = 0.1 V to 4.9 V 110 130 dB
/ΔT
−40°C ≤ T
≤ +125°C 0.03 0.1 µV/°C
A
RL = 100 kΩ to ground 4.99 4.994 V
= 10 kΩ to ground 4.95 4.97 V
L
RL = 100 kΩ to V+ 5 7 mV
= 10 kΩ to V+ 20 25 mV
L
±25 mA
IO = 0 170 210 µA
G = ±1, 2 V step, CL = 20 pF, RL = 1 kΩ 10 s
RL = 10 kΩ, RL = 100 kΩ, CL = 20 pF 65 Degrees
f = 0.1 Hz to 10 Hz 1.2 µV p-p
f = 1 kHz 52
nV/√Hz
Rev. A | Page 5 of 24
AD8538/AD8539
@ VS = 2.7 V, VCM = 1.35 V, VO = 1.35 V, TA = 25°C, unless otherwise specified.
Table 4.
Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS
Offset Voltage V
OS
−40°C ≤ TA ≤ +125°C 30 µV
Input Bias Current I
B
−40°C ≤ TA ≤ +85°C 35 125 pA
−40°C ≤ TA ≤ +125°C 0.7 1.0 nA
Input Offset Current I
OS
−40°C ≤ TA ≤ +125°C 300 pA
Input Voltage Range 0 2.7 V
−40°C ≤ TA ≤ +125°C 0.2 2.5
Common-Mode Rejection Ratio CMRR VCM = 0 V to 2.7 V 110 130 dB
−40°C ≤ TA ≤ +125°C, VCM = 0.2 V to 2.5 V 100 125 dB
Large Signal Voltage Gain A
VO
−40°C ≤ TA ≤ +125°C 105 125 dB
Offset Voltage Drift
ΔV
OS
OUTPUT CHARACTERISTICS
Output Voltage High V
OH
−40°C ≤ TA ≤ +125°C, RL = 100 kΩ to ground 2.68 V
R
−40°C ≤ TA ≤ +125°C, RL = 10 kΩ to ground 2.66 V
Output Voltage Low V
OL
−40°C ≤ TA ≤ +125°C, RL = 100 kΩ to V+ 6 8 mV
R
−40°C ≤ TA ≤ +125°C, RL = 10 kΩ to V+ 20 25 mV
Short-Circuit Limit I
SC
POWER SUPPLY
Power Supply Rejection Ratio PSRR VS = 2.7 V to 5.5 V 105 125 dB
−40°C ≤ TA ≤ +125°C 100 125 dB
Supply Current/Amplifier I
SY
−40°C ≤ TA ≤ +125°C 225 µA
DYNAMIC PERFORMANCE
Slew Rate SR RL = 10 kΩ 0.35 V/µs
Settling Time 0.01% t
S
Overload Recovery Time 0.05 ms
Gain Bandwidth Product GBP 430 kHz
Phase Margin Ø
M
NOISE PERFORMANCE
Voltage Noise e
Voltage Noise Density e
n p-p
n
5 16 µV
15 25 pA
20 50 pA
RL = 10 kΩ, VO = 0.1 V to 2.6 V 110 130 dB
/ΔT
−40°C ≤ T
≤ +125°C 0.03 0.1 µV/°C
A
RL = 100 kΩ to ground 2.68 2.693 V
= 10 kΩ to ground 2.67 2.68 V
L
RL = 100 kΩ to V+ 5 7 mV
= 10 kΩ to V+ 14 20 mV
L
±8 mA
IO = 0 210 µA
G = ±1, 1 V step, CL = 20 pF, RL = ∞ 8 s
RL = 10 kΩ, RL = 100 kΩ, CL = 20 pF 65 Degrees
f = 0.1 Hz to 10 Hz 2.0 µV p-p
f = 1 kHz 55
nV/√Hz
Rev. A | Page 6 of 24
AD8538/AD8539
ABSOLUTE MAXIMUM RATINGS
T = 25°C, unless otherwise noted.
A
Table 5.
Parameter Rating
Supply Voltage +6 V
Input Voltage V − 0.3 V to V + 0.3 V
Differential Input Voltage ±6 V
Output Short-Circuit Duration to GND Observe derating curve
Storage Temperature Range –65°C to +150°C
Lead Temperature (Soldering, 60 sec) 300°C
Operating Temperature Range –40°C to +125°C
Junction Temperature Range −65°C to +150°C
SSDD
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
Absolute maximum ratings apply at 25°C, unless otherwise noted.
THERMAL RESISTANCE
θ
is specified for the worst-case conditions, that is, a device
JA
soldered in a circuit board for surface-mount packages.