Low offset voltage: 13 μV maximum
Input offset drift: 0.03 μV/°C
Single-supply operation: 2.7 V to 5.5 V
High gain, CMRR, and PSRR
Low input bias current: 25 pA
Low supply current: 180 μA
APPLICATIONS
Mobile communications
Portable instrumentation
Battery-powered devices
Sensor interfaces
Temperature measurement
PIN CONFIGURATIONS
OUT
1
AD8538
V–
2
TOP VIEW
(Not to Scale)
+IN
3
Figure 1. 5-Lead TSOT-23 (UJ-5)
NC
1
AD8538
−IN
2
3
+IN
TOP VIEW
(Not to Scale)
4
V−
NC = NO CONNECT
Figure 2. 8-Lead SOIC_N (R-8)
V+
5
–IN
4
06741-002
NC
8
V+
7
6
OUT
5
NC
06741-001
Electronic scales
GENERAL DESCRIPTION
The AD8538/AD8539 are very high precision amplifiers featuring
extremely low offset voltage, low input bias current, and low power
consumption. The supply current is less than 215 μA maximujm
per amplifier at 5.0 V. Operation is fully specified from 2.7 V to
1
OUT A
–IN A
+IN A
V–
AD8539
2
3
TOP VIEW
(Not to Scale)
4
Figure 3. 8-Lead SOIC_N (R-8)
8
7
6
5
V+
OUT B
–IN B
+IN B
06741-033
5.0 V single supply (±1.35 V to ±2.5 V dual supply).
The AD8538/AD8539 operate at very low power making these
amplifiers ideal for battery-powered devices and portable
equipment.
The AD8538/AD8539 are specified over the extended industrial
temperature range (−40°C to +125°C). The AD8538 amplifier is
1
OUT A
–IN A
+IN A
V–
AD8539
2
TOP VIEW
3
(Not to Scale)
4
Figure 4. 8-Lead MSOP (RM-8)
8
7
6
5
V+
OUT B
–IN B
+IN B
06741-034
available in 5-lead TSOT-23, and 8-lead, narrow body SOIC
packages, and the AD8539 amplifier is available in 8-lead, narrow
body SOIC and 8-lead MSOP.
Rev. A
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Anal og Devices for its use, nor for any infringements of patents or ot her
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
Changes to Ordering Guide.......................................................... 21
10/05—Revision 0: Initial Version
Rev. A | Page 2 of 24
AD8538/AD8539
SPECIFICATIONS
AD8538 ELECTRICAL SPECIFICATIONS
@ VS = 5.0 V, VCM = 2.5 V, VO = 2.5 V, TA = 25°C, unless otherwise specified.
Table 1.
Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS
Offset Voltage V
OS
−40°C ≤ TA ≤ +125°C 30 µV
Input Bias Current I
B
−40°C ≤ TA ≤ +85°C 35 100 pA
−40°C ≤ TA ≤ +125°C 0.7 1.0 nA
Input Offset Current I
OS
−40°C ≤ TA ≤ +125°C 150 pA
Input Voltage Range 0 5 V
Common-Mode Rejection Ratio CMRR VCM = 0 V to 5 V 115 150 dB
−40°C ≤ TA ≤ +125°C, VCM = 0.2 V to 4.8 V 100 135 dB
Large Signal Voltage Gain A
VO
−40°C ≤ TA ≤ +125°C 110 135 dB
Offset Voltage Drift
ΔV
OS
OUTPUT CHARACTERISTICS
Output Voltage High V
OH
−40°C ≤ TA ≤ +125°C, RL = 100 kΩ to ground 4.98 V
R
−40°C ≤ TA ≤ +125°C, RL = 10 kΩ to ground 4.94 V
Output Voltage Low V
OL
−40°C ≤ TA ≤ +125°C, RL = 100 kΩ to V+ 2.8 7 mV
R
−40°C ≤ TA ≤ +125°C, RL = 10 kΩ to V+ 20 30 mV
Short-Circuit Limit I
SC
POWER SUPPLY
Power Supply Rejection Ratio PSRR VS = 2.7 V to 5.0 V 105 125 dB
−40°C ≤ TA ≤ +125°C 100 125 dB
Supply Current/Amplifier I
SY
−40°C ≤ TA ≤ +125°C 190 215 µA
DYNAMIC PERFORMANCE
Slew Rate SR RL =10 kΩ 0.4 V/µs
Settling Time 0.01% t
S
Overload Recovery Time 0.05 ms
Gain Bandwidth Product GBP 430 kHz
Phase Margin Ø
M
NOISE PERFORMANCE
Voltage Noise e
Voltage Noise Density e
n p-p
n
5 13 µV
15 25 pA
20 50 pA
RL = 10 kΩ, VO = 0.1 V to 4.9 V 115 141 dB
/ΔT
−40°C ≤ T
≤ +125°C 0.03 0.1 µV/°C
A
RL = 100 kΩ to ground 4.99 4.998 V
= 10 kΩ to ground 4.95 4.970 V
L
RL = 100 kΩ to V+ 1.9 5 mV
= 10 kΩ to V+ 17 20 mV
L
±25 mA
IO = 0 150 180 µA
G = ±1, 2 V step, CL = 20 pF, RL = 1 kΩ 10 s
RL = 10 kΩ, RL = 100 kΩ, CL = 20 pF 65 Degrees
f = 0.1 Hz to 10 Hz 2.0 µV p-p
f = 1 kHz 50
nV/√Hz
Rev. A | Page 3 of 24
AD8538/AD8539
@ VS = 2.7 V, VCM = 1.35 V, VO = 1.35 V, TA = 25°C, unless otherwise specified.
Table 2.
Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS
Offset Voltage V
OS
−40°C ≤ TA ≤ +125°C 30 µV
Input Bias Current I
B
−40°C ≤ TA ≤ +85°C 35 100 pA
−40°C ≤ TA ≤ +125°C 0.7 1.0 nA
Input Offset Current I
OS
−40°C ≤ TA ≤ +125°C 150 pA
Input Voltage Range 0 2.7 V
Common-Mode Rejection Ratio CMRR VCM = 0 V to 2.5 V 110 140 dB
−40°C ≤ TA ≤ +125°C 100 135 dB
Large Signal Voltage Gain A
VO
−40°C ≤ TA ≤ +125°C 105 135 dB
Offset Voltage Drift
ΔV
OS
OUTPUT CHARACTERISTICS
Output Voltage High V
OH
−40°C ≤ TA ≤ +125°C, RL = 100 kΩ to ground 2.68 V
R
−40°C ≤ TA ≤ +125°C, RL = 10 kΩ to ground 2.66 V
Output Voltage Low V
OL
−40°C ≤ TA ≤ +125°C, RL = 100 kΩ to V+ 2.4 5 mV
R
−40°C ≤ TA ≤ +125°C, RL = 10 kΩ to V+ 20 25 mV
Short-Circuit Limit I
SC
POWER SUPPLY
Power Supply Rejection Ratio PSRR VS = 2.7 V to 5.5 V 105 125 dB
−40°C ≤ TA ≤ +125°C 100 125 dB
Supply Current/Amplifier I
SY
−40°C ≤ TA ≤ +125°C 190 215 µA
DYNAMIC PERFORMANCE
Slew Rate SR RL = 10 kΩ 0.35 V/µs
Settling Time 0.01% t
S
Overload Recovery Time 0.05 ms
Gain Bandwidth Product GBP 430 kHz
Phase Margin Ø
M
NOISE PERFORMANCE
Voltage Noise e
Voltage Noise Density e
n p-p
n
5 13 µV
15 25 pA
20 50 pA
RL = 10 kΩ, VO = 0.1 V to 1.7 V 110 140 dB
/ΔT
−40°C ≤ T
≤ +125°C 0.03 0.1 µV/°C
A
RL = 100 kΩ to ground 2.68 2.698 V
= 10 kΩ to ground 2.67 2.68 V
L
RL = 100 kΩ to V+ 1.7 5 mV
= 10 kΩ to V+ 14 20 mV
L
±8 mA
IO = 0 150 180 µA
G = ±1, 1 V step, CL = 20 pF, RL = 1 kΩ 5 s
RL = 10 kΩ, RL = 100 kΩ, CL = 20 pF 65 Degrees
f = 0.1 Hz to 10 Hz 2.0 µV p-p
f = 1 kHz 50
nV/√Hz
Rev. A | Page 4 of 24
AD8538/AD8539
AD8539 ELECTRICAL SPECIFICATIONS
@ VS = 5.0 V, VCM = 2.5 V, VO = 2.5 V, TA = 25°C, unless otherwise specified.
Table 3.
Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS
Offset Voltage V
OS
−40°C ≤ TA ≤ +125°C 30 µV
Input Bias Current I
B
−40°C ≤ TA ≤ +85°C 35 125 pA
−40°C ≤ TA ≤ +125°C 0.7 1.0 nA
Input Offset Current I
OS
−40°C ≤ TA ≤ +125°C 400 pA
Input Voltage Range 0 5 V
−40°C ≤ TA ≤ +125°C 0.2 4.8 V
Common-Mode Rejection Ratio CMRR VCM = 0 V to 5 V 115 135 dB
−40°C ≤ TA ≤ +125°C, VCM = 0.2 V to 4.8 V 100 130 dB
Large Signal Voltage Gain A
VO
−40°C ≤ TA ≤ +125°C 110 125 dB
Offset Voltage Drift
ΔV
OS
OUTPUT CHARACTERISTICS
Output Voltage High V
OH
−40°C ≤ TA ≤ +125°C, RL = 100 kΩ to ground 4.98 V
R
−40°C ≤ TA ≤ +125°C, RL = 10 kΩ to ground 4.94 V
Output Voltage Low V
OL
−40°C ≤ TA ≤ +125°C, RL = 100 kΩ to V+ 6 8 mV
R
−40°C ≤ TA ≤ +125°C, RL = 10 kΩ to V+ 24 30 mV
Short-Circuit Limit I
SC
POWER SUPPLY
Power Supply Rejection Ratio PSRR VS = 2.7 V to 5.0 V 105 125 dB
−40°C ≤ TA ≤ +125°C 100 125 dB
Supply Current/Amplifier I
SY
−40°C ≤ TA ≤ +125°C 225 µA
DYNAMIC PERFORMANCE
Slew Rate SR RL =10 kΩ 0.4 V/µs
Settling Time 0.01% t
S
Overload Recovery Time 0.05 ms
Gain Bandwidth Product GBP 430 kHz
Phase Margin Ø
M
NOISE PERFORMANCE
Voltage Noise e
Voltage Noise Density e
n p-p
n
5 15 µV
15 60 pA
20 70 pA
RL = 10 kΩ, VO = 0.1 V to 4.9 V 110 130 dB
/ΔT
−40°C ≤ T
≤ +125°C 0.03 0.1 µV/°C
A
RL = 100 kΩ to ground 4.99 4.994 V
= 10 kΩ to ground 4.95 4.97 V
L
RL = 100 kΩ to V+ 5 7 mV
= 10 kΩ to V+ 20 25 mV
L
±25 mA
IO = 0 170 210 µA
G = ±1, 2 V step, CL = 20 pF, RL = 1 kΩ 10 s
RL = 10 kΩ, RL = 100 kΩ, CL = 20 pF 65 Degrees
f = 0.1 Hz to 10 Hz 1.2 µV p-p
f = 1 kHz 52
nV/√Hz
Rev. A | Page 5 of 24
AD8538/AD8539
@ VS = 2.7 V, VCM = 1.35 V, VO = 1.35 V, TA = 25°C, unless otherwise specified.
Table 4.
Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS
Offset Voltage V
OS
−40°C ≤ TA ≤ +125°C 30 µV
Input Bias Current I
B
−40°C ≤ TA ≤ +85°C 35 125 pA
−40°C ≤ TA ≤ +125°C 0.7 1.0 nA
Input Offset Current I
OS
−40°C ≤ TA ≤ +125°C 300 pA
Input Voltage Range 0 2.7 V
−40°C ≤ TA ≤ +125°C 0.2 2.5
Common-Mode Rejection Ratio CMRR VCM = 0 V to 2.7 V 110 130 dB
−40°C ≤ TA ≤ +125°C, VCM = 0.2 V to 2.5 V 100 125 dB
Large Signal Voltage Gain A
VO
−40°C ≤ TA ≤ +125°C 105 125 dB
Offset Voltage Drift
ΔV
OS
OUTPUT CHARACTERISTICS
Output Voltage High V
OH
−40°C ≤ TA ≤ +125°C, RL = 100 kΩ to ground 2.68 V
R
−40°C ≤ TA ≤ +125°C, RL = 10 kΩ to ground 2.66 V
Output Voltage Low V
OL
−40°C ≤ TA ≤ +125°C, RL = 100 kΩ to V+ 6 8 mV
R
−40°C ≤ TA ≤ +125°C, RL = 10 kΩ to V+ 20 25 mV
Short-Circuit Limit I
SC
POWER SUPPLY
Power Supply Rejection Ratio PSRR VS = 2.7 V to 5.5 V 105 125 dB
−40°C ≤ TA ≤ +125°C 100 125 dB
Supply Current/Amplifier I
SY
−40°C ≤ TA ≤ +125°C 225 µA
DYNAMIC PERFORMANCE
Slew Rate SR RL = 10 kΩ 0.35 V/µs
Settling Time 0.01% t
S
Overload Recovery Time 0.05 ms
Gain Bandwidth Product GBP 430 kHz
Phase Margin Ø
M
NOISE PERFORMANCE
Voltage Noise e
Voltage Noise Density e
n p-p
n
5 16 µV
15 25 pA
20 50 pA
RL = 10 kΩ, VO = 0.1 V to 2.6 V 110 130 dB
/ΔT
−40°C ≤ T
≤ +125°C 0.03 0.1 µV/°C
A
RL = 100 kΩ to ground 2.68 2.693 V
= 10 kΩ to ground 2.67 2.68 V
L
RL = 100 kΩ to V+ 5 7 mV
= 10 kΩ to V+ 14 20 mV
L
±8 mA
IO = 0 210 µA
G = ±1, 1 V step, CL = 20 pF, RL = ∞ 8 s
RL = 10 kΩ, RL = 100 kΩ, CL = 20 pF 65 Degrees
f = 0.1 Hz to 10 Hz 2.0 µV p-p
f = 1 kHz 55
nV/√Hz
Rev. A | Page 6 of 24
AD8538/AD8539
ABSOLUTE MAXIMUM RATINGS
T = 25°C, unless otherwise noted.
A
Table 5.
Parameter Rating
Supply Voltage +6 V
Input Voltage V − 0.3 V to V + 0.3 V
Differential Input Voltage ±6 V
Output Short-Circuit Duration to GND Observe derating curve
Storage Temperature Range –65°C to +150°C
Lead Temperature (Soldering, 60 sec) 300°C
Operating Temperature Range –40°C to +125°C
Junction Temperature Range −65°C to +150°C
SSDD
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
Absolute maximum ratings apply at 25°C, unless otherwise noted.
THERMAL RESISTANCE
θ
is specified for the worst-case conditions, that is, a device
JA
soldered in a circuit board for surface-mount packages.
Figure 56. AD8539 Input Offset Voltage Distribution
45
40
35
30
25
20
15
NUMBER OF AMPLIFIERS
10
5
0
00.0160. 0320.0480. 0640. 0800.096
TCV
OS
(µV)
AD8539
= ±1.35V
V
SY
–40°C < T
< +125°C
A
Figure 57. AD8539 Input Offset Voltage Drift Distribution
20
15
10
5
(µV)
0
OS
V
–5
–10
AD8539
V
= 2.7V
SY
0V < V
T
= 25°C
A
CM
< 2.7V
10
5
OUTPUT SATURATION VOLTAGE (mV)
0
06741-057
–40 –25 –10520 355065 8095 110 125
VDD – VOH, RL = 100kΩ
VOL, RL = 100kΩ
TEMPERATURE ( °C)
06741-060
Figure 59. AD8539 Output Saturation Voltage vs. Temperature
80
AD8539
= ±1.35V
V
SY
70
= 2kΩ
R
L
60
50
40
30
OVERSHOOT (%)
20
10
0
06741-058
1101001k
CAPACITANCE (pF )
OS+
OS–
06741-061
Figure 60. AD8539 Small Signal Overshoot vs. Load Capacitance
AD8539
= ±1.35V
V
SY
= 1
A
V
= 300pF
C
L
= 10kΩ
R
L
VOLTAGE (500mV/DIV)
–15
–20
00.30.60.91.21.51.82.12.42.7
V
(V)
CM
06741-059
Figure 58. AD8539 Input Offset Voltage vs. Input Common-Mode Voltage
Rev. A | Page 18 of 24
TIME (4µs/DIV)
Figure 61. AD8539 Large Signal Transient Response
06741-062
AD8538/AD8539
1k
AD8539
= ±1.35V
V
SY
–20
–40
–60
0
AD8539
= ±1.35V
V
SY
100
VOLTAGE NOISE DENSITY (nV/ Hz)
10
1001k10k100k
FREQUENCY (Hz)
Figure 62. AD8539 Voltage Noise Density Figure 63. AD8539 Channel Separation vs. Frequency
–80
–100
–120
CHANNEL SEPARATION (dB)
–140
–160
06741-063
1001k10k100k
FREQUENCY (Hz)
06741-064
Rev. A | Page 19 of 24
AD8538/AD8539
OUTLINE DIMENSIONS
2.90 BSC
54
0.50
0.30
2.80 BSC
0.95 BSC
*
1.00 MAX
SEATING
PLANE
0.20
0.08
8°
4°
0°
1.60 BSC
*
0.90
0.87
0.84
0.10 MAX
123
PIN 1
1.90
BSC
*
COMPLIANT TO JEDEC STANDARDS MO-193-AB WITH
THE EXCEPTION OF PACKAGE HEIGHT AND THICKNESS.
Figure 64. 5-Lead Thin Small Outline Transistor Package [TSOT-23]
(UJ-5)
Dimensions shown in millimeters
0.60
0.45
0.30
5.00 (0.1968)
4.80 (0.1890)
4.00 (0.1574)
3.80 (0.1497)
0.25 (0.0098)
0.10 (0.0040)
COPLANARIT Y
0.10
CONTROLL ING DIM ENSIONS ARE IN MILLI METERS; INCH DIMENSI ONS
(IN PARENTHESES) ARE ROUNDED-OFF MILLIMETER EQUIVALENTS FOR
REFERENCE ON LY AND ARE NOT APPROPRIATE FOR USE IN DESIGN.
85
1
1.27 (0.050 0)
SEATING
PLANE
COMPLIANT TO JEDEC STANDARDS MS-012-A A
BSC
6.20 (0.244 1)
5.80 (0.228 4)
4
1.75 (0.0688)
1.35 (0.0532)
0.51 (0.020 1)
0.31 (0.012 2)
8°
0°
0.25 (0.0098)
0.17 (0.0067)
Figure 65. 8-Lead Standard Small Outline Package [SOIC_N]
Narrow Body
(R-8)
Dimensions shown in millimeters and (inches)
0.50 (0.0196 )
0.25 (0.0099 )
1.27 (0.050 0)
0.40 (0.015 7)
45°
012407-A
Rev. A | Page 20 of 24
AD8538/AD8539
0.95
0.85
0.75
0.15
0.00
3.20
3.00
2.80
8
5
4
SEATING
PLANE
5.15
4.90
4.65
1.10 MAX
0.23
0.08
8°
0°
3.20
3.00
1
2.80
PIN 1
0.65 BSC
0.38
0.22
COPLANARITY
0.10
COMPLIANT TO JEDEC STANDARDS MO-187-AA
Figure 66. 8-Lead Mini Small Outline Package [MSOP]
0.80
0.60
0.40
(RM-8)
Dimensions shown in millimeters
ORDERING GUIDE
Model Temperature Range Package Description Package Option Branding
AD8538AUJZ-R2−40°C to +125°C 5-Lead TSOT-23 UJ-5 A0C
AD8538AUJZ-REEL−40°C to +125°C 5-Lead TSOT-23 UJ-5 A0C
AD8538AUJZ-REEL7−40°C to +125°C 5-Lead TSOT-23 UJ-5 A0C
AD8538ARZ−40°C to +125°C 8-Lead SOIC_N R-8
AD8538ARZ-REEL−40°C to +125°C 8-Lead SOIC_N R-8
AD8538ARZ-REEL7−40°C to +125°C 8-Lead SOIC_N R-8
AD8539ARMZ-R2−40°C to +125°C 8-Lead MSOP RM-8 A1S
AD8539ARMZ-REEL−40°C to +125°C 8-Lead MSOP RM-8 A1S
AD8539ARZ−40°C to +125°C 8-Lead SOIC_N R-8
AD8539ARZ-REEL−40°C to +125°C 8-Lead SOIC_N R-8
AD8539ARZ-REEL7−40°C to +125°C 8-Lead SOIC_N R-8