Analog Devices AD8510, AD8512, AD8513 Service Manual

Precision, Very Low Noise, Low Input Bias Current,

A

A

A

O

A

FEATURES

Fast settling time: 500 ns to 0.1%
Low offset voltage: 400 μV maximum
Low TCVOS: 1 μV/°C typical
Low input bias current: 25 pA typical
Dual-supply operation: ±5 V to ±15 V
Low noise: 8 nV/√Hz
Low distortion: 0.0005%
No phase reversal
Unity gain stable

APPLICATIONS

Instrumentation
Multipole filters
Precision current measurement
Photodiode amplifiers
Sensors
Audio

Wide Bandwidth JFET Operational Amplifiers

AD8510/AD8512/AD8513

PIN CONFIGURATIONS

NC

AD8510

–IN

TOP VIEW

+IN

(Not to Scale)

V–

Figure 1. 8-Lead MSOP (RM Suffix) Figure 2. 8-Lead SOIC_N (R Suffix)

–IN A

+IN A

V–

1

AD8512

TOP VIEW

(Not to Scale)

4

OUT

Figure 3. 8-Lead MSOP (RM Suffix) Figure 4. 8-Lead SOIC_N (R Suffix)

1

OUT

–IN A

2

+IN A

3

AD8513

V+

4

TOP VIEW

(Not to Scale)

+IN B

5

–IN B

6

UT B

7

Figure 5. 14-Lead SOIC_N (R Suffix) Figure 6. 14-Lead TSSOP (RU Suffix)

NC

V+

OUT

NC

02729-D-003

8

V+

OUT B

–IN B

+IN B

5

14

OUT D

–IN D

13

+IN D

12

V–

11

+IN C

10

–IN C

9

OUT C

8

02729-D-001

02729-D-005

NC

–IN

+IN

V–

OUT

–IN A

+IN A

OUT

–IN A

+IN A

+IN B

–IN B

OUT B

V–

V+

AD8510

TOP VIEW

(Not to Scale)

AD8512

TOP VIEW

(Not to Scale)

1

AD8513

TOP VIEW

(Not to Scale)

7

NC

V+

OUT

NC

02729-D-004

V+

OUT B

–IN B

+IN B

02729-D-002

14

OUT D

–IN D

+IN D

V–

+IN C

–IN C

OUT C

8

02729-D-006

GENERAL DESCRIPTION

The AD8510/AD8512/AD8513 are single-, dual-, and quad­precision JFET amplifiers that feature low offset voltage, input
bias current, input voltage noise, and input current noise.

The combination of low offsets, low noise, and very low input
bias currents makes these amplifiers especially suitable for high
impedance sensor amplification and precise current measurements
using shunts. The combination of dc precision, low noise, and
fast settling time results in superior accuracy in medical
instruments, electronic measurement, and automated test
equipment. Unlike many competitive amplifiers, the AD8510/
AD8512/AD8513 maintain their fast settling performance even
with substantial capacitive loads. Unlike many older JFET
amplifiers, the AD8510/AD8512/AD8513 does not suffer from
output phase reversal when input voltages exceed the maximum
common-mode voltage range.

Fast slew rate and great stability with capacitive loads make the
AD8510/AD8512/AD8513 a perfect fit for high performance
filters. Low input bias currents, low offset, and low noise result
in a wide dynamic range of photodiode amplifier circuits. Low
noise and distortion, high output current, and excellent speed
make the AD8510/AD8512/AD8513 a great choice for audio
applications.

The AD8510/AD8512 are both available in 8-lead narrow SOIC_N
and 8-lead MSOP packages. MSOP packaged parts are only
available in tape and reel. The AD8513 is available in 14-lead
SOIC_N and TSSOP packages.

The AD8510/AD8512/AD8513 are specified over the –40°C to
+125°C extended industrial temperature range.

Rev. F

Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Anal og Devices for its use, nor for any infringements of patents or ot her
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: [phone] www.analog.com
Fax: [phone] ©2006 Analog Devices, Inc. All rights reserved.

AD8510/AD8512/AD8513

TABLE OF CONTENTS

Features .............................................................................................. 1

Output Phase Reversal............................................................... 13

Applications....................................................................................... 1

Pin Configurations ........................................................................... 1

General Description......................................................................... 1

Revision History ............................................................................... 2

Specifications..................................................................................... 3

Electrical Characteristics............................................................. 4

Absolute Maximum Ratings............................................................ 6

ESD Caution.................................................................................. 6

Typical Performance Characteristics ............................................. 7

General Application Information................................................. 13

Input Overvoltage Protection................................................... 13

REVISION HISTORY

6/06—Rev. E to Rev. F

Changes to Figure 23 ....................................................................... 9

Updated Outline Dimensions....................................................... 19

Changes to Ordering Guide.......................................................... 20

6/04—Rev. D to Rev. E

Changes to Format ............................................................. Universal

Changes to Specifications................................................................ 3

Updated Outline Dimensions....................................................... 19

10/03—Rev. C to Rev. D

Added AD8513 Model.......................................................Universal

Changes to Specifications................................................................ 3

Added Figures 36 through 40........................................................ 10

Added new Figures 55 and 57....................................................... 17

Changes to Ordering Guide.......................................................... 20

9/03—Rev. B to Rev. C

Changes to Ordering Guide ........................................................... 4

Updated Figure 2 ............................................................................ 10

Changes to Input Overvoltage Protection Section .................... 10

Changes to Figures 10 and 11 ....................................................... 12

Changes to Photodiode Circuits Section..................................... 13

Changes to Figures 13 and 14 ....................................................... 13

Deleted Precision Current Monitoring Section.......................... 14

Updated Outline Dimensions....................................................... 15

THD + Noise............................................................................... 13

Total Noise Including Source Resistors................................... 13

Settling Time............................................................................... 14

Overload Recovery Time .......................................................... 14

Capacitive Load Drive ............................................................... 14

Open-Loop Gain and Phase Response.................................... 15

Precision Rectifiers..................................................................... 16

I-V Conversion Applications.................................................... 17

Outline Dimensions ....................................................................... 19

Ordering Guide .......................................................................... 20

3/03—Rev. A to Rev. B

Updated Figure 5............................................................................ 11

Updated Outline Dimensions....................................................... 15

8/02—Rev. 0 to Rev. A

Added AD8510 Model....................................................... Universal

Added Pin Configurations ...............................................................1

Changes to Specifications.................................................................2

Changes to Ordering Guide.............................................................4

Changes to TPCs 2 and 3..................................................................5

Added new TPCs 10 and 12.............................................................6

Replaced TPC 20 ...............................................................................8

Replaced TPC 27 ...............................................................................9

Changes to General Application Information Section.............. 10

Changes to Figure 5........................................................................ 11

Changes to I-V Conversion Applications Section ..................... 13

Changes to Figures 13 and 14....................................................... 13

Changes to Figure 17...................................................................... 14

Rev. F | Page 2 of 20

AD8510/AD8512/AD8513

SPECIFICATIONS

@ VS = ±5 V, VCM = 0 V, TA = 25°C, unless otherwise noted.

Table 1.

Parameter Symbol Conditions Min Typ Max Unit

INPUT CHARACTERISTICS

Offset Voltage (B Grade)

−40°C < TA < +125°C 0.8 mV
Offset Voltage (A Grade) V

−40°C < TA < +125°C 1.8 mV
Input Bias Current I

−40°C < TA < +85°C 0.7 nA

−40°C < TA < +125°C 7.5 nA
Input Offset Current I

−40°C < TA < +85°C 0.3 nA

−40°C < TA < +125°C 0.5 nA
Input Capacitance

Differential 12.5 pF

Common-Mode 11.5 pF
Input Voltage Range −2.0 +2.5 V
Common-Mode Rejection Ratio CMRR VCM = −2.0 V to +2.5 V 86 100 dB
Large Signal Voltage Gain A
Offset Voltage Drift (B Grade)1 ΔVOS/ΔT 0.9 5 μV/°C
Offset Voltage Drift (A Grade) ΔVOS/ΔT 1.7 12 μV/°C

OUTPUT CHARACTERISTICS

Output Voltage High VOH RL = 10 kΩ +4.1 +4.3 V
Output Voltage Low VOL −40°C < TA < +125°C −4.9 −4.7 V
Output Voltage High VOH RL = 2 kΩ +3.9 +4.2 V
Output Voltage Low VOL −40°C < TA < +125°C −4.9 −4.5 V
Output Voltage High VOH RL = 600 Ω +3.7 +4.1 V
Output Voltage Low VOL −40°C < TA < +125°C −4.8 −4.2 V
Output Current I

POWER SUPPLY

Power Supply Rejection Ratio PSRR VS = ±4.5 V to ±18 V 86 130 dB
Supply Current/Amplifier I

AD8510/AD8512/AD8513 VO = 0 V 2.0 2.3 mA

AD8510/AD8512 −40°C < TA < +125°C 2.5 mA

AD8513 −40°C < TA < +125°C 2.75 mA

DYNAMIC PERFORMANCE

Slew Rate SR RL = 2 kΩ 20 V/μs
Gain Bandwidth Product GBP 8 MHz
Settling Time tS To 0.1%, 0 V to 4 V step, G = +1 0.4 μs
THD + Noise THD + N 1 kHz, G = +1, RL = 2 kΩ 0.0005 %
Phase Margin Φ

NOISE PERFORMANCE

Voltage Noise Density en f = 10 Hz 34 nV/√Hz

f = 100 Hz 12 nV/√Hz
f = 1 kHz 8.0 10 nV/√Hz
f = 10 kHz 7.6 nV/√Hz

Peak-to-Peak Voltage Noise en p-p 0.1 Hz to 10 Hz bandwidth 2.4 5.2 μV p-p

1

AD8510/AD8512 only.

1

V

OS

OS

B

OS

VO

OUT

SY

0.08 0.4 mV

0.1 0.9 mV

21 75 pA

5 50 pA

RL = 2 kΩ, VO = −3 V to +3 V 65 107 V/mV

±40 ±54 mA

O

44.5 Degrees

Rev. F | Page 3 of 20

AD8510/AD8512/AD8513

ELECTRICAL CHARACTERISTICS

@ VS = ±15 V, VCM = 0 V, TA = 25°C, unless otherwise noted.

Table 2.

Parameter Symbol Conditions Min Typ Max Unit

INPUT CHARACTERISTICS

Offset Voltage (B Grade)1 VOS 0.08 0.4 mV

−40°C < TA < +125°C 0.8 mV

Offset Voltage (A Grade) VOS 0.1 1.0 mV

−40°C < TA < +125°C 1.8 mV
Input Bias Current IB 25 80 pA

−40°C < TA < +85°C 0.7 nA

−40°C < TA < +125°C 10 nA
Input Offset Current I

OS

−40°C < TA < +85°C 0.3 nA

−40°C < TA < +125°C 0.5 nA
Input Capacitance

Differential 12.5 pF

Common-Mode 11.5 pF
Input Voltage Range −13.5 +13.0 V
Common-Mode Rejection Ratio CMRR VCM = −12.5 V to +12.5 V 86 108 dB
Large Signal Voltage Gain AVO VO = −13.5 V to +13.5 V 115 196 V/mV

R

Offset Voltage Drift (B Grade)1 ΔVOS/ΔT 1.0 5 μV/°C
Offset Voltage Drift (A Grade) ΔVOS/ΔT 1.7 12 μV/°C

OUTPUT CHARACTERISTICS

Output Voltage High VOH RL = 10 kΩ +14.0 +14.2 V
Output Voltage Low VOL −40°C < TA < +125°C −14.9 −14.6 V
Output Voltage High VOH RL = 2 kΩ +13.8 +14.1 V
Output Voltage Low VOL −40°C < TA < +125°C –14.8 −14.5 V
Output Voltage High VOH RL = 600 Ω, TA = 25°C +13.5 +13.9 V

−40°C < TA < +125°C +11.4 V
Output Voltage Low VOL RL = 600 Ω, TA = 25°C −14.3 −13.8 V

−40°C < TA < +125°C −12.1 V
Output Current I

±70 mA

OUT

POWER SUPPLY

Power Supply Rejection Ratio PSRR VS = ±4.5 V to ±18 V 86 dB
Supply Current/Amplifier ISY

AD8510/AD8512/AD8513 VO = 0 V 2.2 2.5 mA
AD8510/AD8512 −40°C < TA < +125°C 2.6 mA
AD8513 −40°C < TA < +125°C 3.0 mA

DYNAMIC PERFORMANCE

Slew Rate SR RL = 2 kΩ 20 V/μs
Gain Bandwidth Product GBP 8 MHz
Settling Time t

S

To 0.01%, 0 V to 10 V step, G = +1 0.9 μs

THD + Noise THD + N 1 kHz, G = +1, RL = 2 kΩ 0.0005 %
Phase Margin ΦO 52 Degrees

6 75 pA

= 2 kΩ, VCM = 0 V

L

To 0.1%, 0 V to 10 V step, G = +1 0.5 μs

Rev. F | Page 4 of 20

AD8510/AD8512/AD8513

Parameter Symbol Conditions Min Typ Max Unit

NOISE PERFORMANCE

Voltage Noise Density en f = 10 Hz 34 nV/√Hz
f = 100 Hz 12 nV/√Hz
f = 1 kHz 8.0 10 nV/√Hz
f = 10 kHz 7.6 nV/√Hz

Peak-to-Peak Voltage Noise en p-p 0.1 Hz to 10 Hz bandwidth 2.4 5.2 μV p-p

1

AD8510/AD8512 only.

Rev. F | Page 5 of 20

AD8510/AD8512/AD8513

ABSOLUTE MAXIMUM RATINGS

Table 3.

Parameter Rating

Supply Voltage ±18 V
Input Voltage ±V
Output Short-Circuit Duration to GND

S

Observe
Derating Curves

Storage Temperature Range

R, RM Packages −65°C to +150°C
Operating Temperature Range −40°C to +125°C
Junction Temperature Range

R, RM Packages −65°C to +150°C
Lead Temperature (Soldering, 10 sec) 300°C
Electrostatic Discharge (HBM) 2000 V

Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.

Table 4. Thermal Resistance

Package Type θ

1

JA

θ

Unit

JC

8-Lead MSOP (RM) 210 45 °C/W
8-Lead SOIC_N (R) 158 43 °C/W
14-Lead SOIC_N (R) 120 36 °C/W
14-Lead TSSOP (RU) 180 35 °C/W

1

θJA is specified for worst-case conditions, that is, θJA is specified for device

soldered in circuit board for surface-mount packages.

ESD CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.

Rev. F | Page 6 of 20