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Low power: 4 mW
Low input leakage current: −1.5 pA typical
Low input referred noise (QNI): 993 e
Linearity error: 0.03% typical
Compact 17 mm × 17 mm BGA
Selectable filter time constants
4 selectable input charge ranges
10 selectable gain ranges
APPLICATION
High performance digital X-ray systems
Medical X-ray
Security (baggage scanner) systems
and LF noise
OS
−
rms typical
GENERAL DESCRIPTION
The AD8488 is a 128-channel, analog front end (AFE) designed for
use in high performance digital X-ray systems. The analog channels
consist of an integrator followed by a gain selectable single-ended
to low impedance differential output. The analog channel converts
the charge acquired by X-ray or photodiode detectors to a voltage.
The channels are composed of CMOS transistors, using typical
high input impedance CMOS gates. The integrators generate charge
dependent voltages using a range of selectable capacitance values that
accommodate a broad range of input charge values. The integrators
are followed by single-ended input to differential output voltage
amplifiers where offset and low frequency noise voltages are
subtracted from the input voltages. A 128:1 channel differential
MUX follows the buffers and drives the analog output buffer.
Switch drivers and certain digital timing functions are included, and
all are mounted on a 255-lead BGA substrate. Charge conversion
for all 128 channels is simultaneous followed by a sequential voltage
output read of the channels using a 7-bit address code. The sequence
occurs twice, sampling all 128 channels. Logic control inputs,
CS_B
and
, select the lower and upper 64 blocks of the channel
addresses.
The AD8488 is packaged in a 17 mm × 17 mm, 255-lead, RoHScompliant ball grid array (BGA). The operating temperature range
is 0°C to 85°C ambient.
FUNCTIONAL BLOCK DIAGRAM
128-Channel
CS_A
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
Figure 1.
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Tel: 781.329.4700
www.analog.com
AD8488 Data Sheet
TABLE OF CONTENTS
Features ...................................................................................................1
Normal 0.03 + 1 % + LSB
Low Power 0.2 + 8.2 % + LSB
OPERATING TEMPERATURE Ambient, normal and low power 0 85 °C
1
Defined as the output voltage divided by the input charge (number of electrons in this case) with the gain amp setting (G = 1). This includes the gain error of the gain amp.
2
Each gain at G = 2, G = 4, G = 8, and G = 10 is calculated as the ratio of each output voltage to that at G = 1. Each measurement corresponds to the selection of each gain
setting capacitor.
3
Gain deviation over temperature.
4
The output noise voltage is measured and converted into the input referred noise electrons.
5
It is defined as the deviation from a best fit line, including the origin. The output voltage is measured with five different input conditions.
CF1 = 0.9 pF, G = 10
= 38 pF 993 e−rms
PAN EL
= 61 pF 2000 e−rms
PAN EL
Rev. A | Page 4 of 20
Data Sheet AD8488
Supply (AVDD, DVDD)
5.5 V
50°C
14.0
0.53
7.7
4.4
°C/W
25°C
21.2
0.15
8.3
4.4
°C/W
50°C
16.2
0.29
8.1
4.4
°C/W
ABSOLUTE MAXIMUM RATINGS
Table 2.
Parameter Rating
Voltage
Charge Input IN0 to IN127 −0.3 V to VREF + 0.3 V
Reference (VREF, VREF_ESD) 5.5 V
Logic Inputs −0.3 V to +5.5 V
Maximum Junction Temperature 125°C
Storage Temperature Range −30°C to +150°C
Input Charge to Integrator Channels 20 pC
Stresses above those listed under Absolute Maximum Ratings may
cause permanent damage to the device. This is a stress rating only;
functional operation of the device at these or any other conditions
above those indicated in the operational section of this
specification is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device
reliability.
THERMAL DATA
ΨJB is the junction-to-board thermal characterization parameter
with a unit of °C/W. The Ψ
and calculation using a 4-layer board. The JESD51-12, Guidelines for Reporting and Using Package Thermal Information, states that
thermal characterization parameters are not the same as thermal
resistances. Ψ
measures the component power flowing through
JB
multiple thermal paths rather than a single path, as in thermal
resistance, θ
. Therefore, ΨJB thermal paths include convection
JB
from the top of the package as well as radiation from the package,
factors that make Ψ
JB
Maximum junction temperature (T
temperature (T
T
= TB + (PD × ΨJB)
J
) and power dissipation (PD) using the formula
B
Refer to JESD51-8 and JESD51-12 for more detailed information
about Ψ