ANALOG DEVICES AD845 Service Manual

Precision, 16 MHz
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a
FEATURES Replaces Hybrid Amplifiers in Many Applications
AC PERFORMANCE: Settles to 0.01% in 350 ns 100 V/s Slew Rate
12.8 MHz Min Unity Gain Bandwidth
1.75 MHz Full Power Bandwidth at 20 V p-p

DC PERFORMANCE:

0.25 mV Max Input Offset Voltage 5 V/C Max Offset Voltage Drift
0.5 nA Input Bias Current 250 V/mV Min Open-Loop Gain 4 V p-p Max Voltage Noise, 0.1 Hz to 10 Hz 94 dB Min CMRR Available in Plastic Mini-DIP, Hermetic CERDIP, and
SOIC Packages. Also Available in Tape and Reel in Accordance with EIA-481A Standard

GENERAL DESCRIPTION

The AD845 is a fast, precise, N channel JFET input, monolithic operational amplifier. It is fabricated using Analog Devices’ complementary bipolar (CB) process. Advanced laser-wafer trimming technology enables the very low input offset voltage and offset voltage drift performance to be realized. This preci­sion, when coupled with a slew rate of 100 V/ms, a stable unity gain bandwidth of 16 MHz, and a settling time of 350 ns to
0.01%—while driving a parallel load of 100 pF and 500 W— represents a combination of features unmatched by any FET input IC amplifier. The AD845 can easily be used to upgrade many existing designs that use BiFET or FET input hybrid amplifiers and, in some cases, those which use bipolar input op amps.
The AD845 is ideal for use in applications such as active filters, high speed integrators, photodiode preamps, sample-and-hold amplifiers, and log amplifiers, and for buffering A/D and D/A converters. The 250 mV max input offset voltage makes offset nulling unnecessary in many applications. The common-mode rejection ratio of 110 dB over a ±10 V input voltage range represents exceptional performance for a JFET input high speed op amp. This, together with a minimum open-loop gain of 250 V/mV ensures that 12-bit performance is achieved, even in unity gain buffer circuits.
CBFET Op Amp
AD845

CONNECTION DIAGRAMS

Plastic Mini-DIP (N) Package
and CERDIP (Q) Package
The AD845 conforms to the standard op amp pinout except that offset nulling is to V+. The AD845J and AD845K grade devices are available specified to operate over the commercial 0C to 70C temperature range. AD845A and AD845B devices are specified for operation over the –40C to +85∞C industrial temperature range. The AD845S is specified to oper­ate over the full military temperature range of –55C to +125∞C. Both the industrial and military versions are available in 8-lead CERDIP packages. The commercial version is available in an 8-lead plastic mini-DIP and 16-lead SOIC; J and S grade chips are also available.

PRODUCT HIGHLIGHTS

1. The high slew rate, fast settling time, and dc precision of the AD845 make it ideal for high speed applications requiring 12-bit accuracy.
2. The performance of circuits using the LF400, HA2520, HA2522, HA2525, HA2620, HA2622, HA2625, 3550, OPA605, and LH0062 can be upgraded in most cases.
3. The AD845 is unity gain stable and internally compensated.
4. The AD845 is specified while driving 100 pF/500 W loads.
16-Lead SOIC
(R-16) Package
REV. E
Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781/329-4700 www.analog.com Fax: 781/326-8703 © 2003 Analog Devices, Inc. All rights reserved.
AD845–SPECIFICATIONS
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(@ 25C and 15 V dc, unless otherwise noted.)
AD845J/A AD845K/B AD845S
Parameter Conditions Min Typ Max Min Typ Max Min Typ Max Unit
INPUT OFFSET VOLTAGE
1
Initial Offset 0.7 1.5 0.1 0.25 0.25 1.0 mV
T
MIN
to T
MAX
2.5 0.4 2.0 mV
Offset Drift 20 1.5 5.0 10 mV/∞C
INPUT BIAS CURRENT
2
Initial VCM = 0 V 0.75 2 0.5 1 0.75 2 nA
T
MIN
to T
MAX
45/75 18/38 500 nA
INPUT OFFSET CURRENT
Initial VCM = 0 V 25 300 15 100 25 300 pA
T
to T
MIN
MAX
INPUT CHARACTERISTICS
Input Resistance 10
11
3/6.5 1.2/2.6 20 nA
10
11
10
11
kW
Input Capacitance 4.0 4.0 4.0 pF
INPUT VOLTAGE RANGE
Differential ±20 ±20 ± 20 V Common-Mode 10 +10.5/–13 10 +10.5/–13 10 +10.5/–13 V Common-Mode Rejection VCM = ±10 V 86 110 94 113 86 110 dB
INPUT VOLTAGE NOISE 0.1 Hz to 10 Hz 4 4 4 mV p-p
f = 10 Hz 80 80 80 nV/÷Hz f = 100 Hz 60 60 60 nV/÷Hz f = 1 kHz 25 25 25 nV/÷Hz f = 10 kHz 18 18 18 nV/÷Hz f = 100 kHz 12 12 12 nV/÷Hz
INPUT CURRENT NOISE f = 1 kHz 0.1 0.1 0.1 pA/÷Hz
OPEN-LOOP GAIN V
= ±10 V
O
R
2 kW 200 500 250 500 200 500 V/mV
LOAD
R
500 W 100 250 125 250 100 250 V/mV
LOAD
T
MIN–TMAX
70 75 50 V/mV
OUTPUT CHARACTERISTICS
Voltage R
500 W 12.5 12.5 12.5 V
LOAD
Current Short Circuit 50 50 50 mA Output Resistance Open Loop 5 5 5 W
FREQUENCY RESPONSE
Small Signal Unity Gain 12.8 16 13.6 16 13.6 16 MHz Full Power Bandwidth
3
VO = ±10 V R
= 500 W 1.75 1.75 1.75 MHz
LOAD
Rise Time 20 20 20 ns Overshoot 20 20 20 % Slew Rate 80 100 94 100 94 100 V/ms Settling Time 10 V Step
C
= 100 pF
LOAD
R
= 500 W
LOAD
to 0.01% 350 350 500 350 500 ns to 0.1% 250 250 250 ns
DIFFERENTIAL GAIN f = 4.4 MHz 0.04 0.04 0.04 %
DIFFERENTIAL PHASE f = 4.4 MHz 0.02 0.02 0.02 Degree
POWER SUPPLY
Rated Performance ±15 ±15 ± 15 V Operating Range 4.75 18 4.75 18 4.75 18 V Rejection Ratio V Quiescent Current T
NOTES
1
Input offset voltage specifications are guaranteed after five minutes of operation at TA = 25C.
2
Bias current specifications are guaranteed maximum at either input after five minutes of operation at T
3
FPBW = slew rate/2 p V peak.
4
S grade T
All min and max specifications are guaranteed. Specifications shown in boldface are tested on all production units at final electrical test. Results from these tests are used to calculate outgoing quality levels.
Specifications subject to change without notice.
MIN–TMAX
are tested with automatic test equipment at TA = –55C and TA = +125C.
= ± 5 to ±15 V 88 110 95 113 88 110 dB
S
MIN
to T
MAX
10 12 10 12 10 12 mA
= 25C.
A
–2–
REV. E
AD845
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ABSOLUTE MAXIMUM RATINGS

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 18 V
Internal Power Dissipation
2
1
Plastic Mini-DIP . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1.6 W
CERDIP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1.4 W
16-Lead SOIC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5 W
Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +V
S
Output Short-Circuit Duration . . . . . . . . . . . . . . . . Indefinite
Differential Input Voltage . . . . . . . . . . . . . . . . . . +V
and –V
S
S
Storage Temperature Range
Q . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .–65C to +150C
N, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .–65C to +125∞C
Lead Temperature Range (Soldering 60 sec) . . . . . . . . . 300∞C
NOTES
1
Stresses above those listed under Absolute Maximum Ratings may cause perma­nent damage to the device. This is a stress rating only, and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
2
Mini-DIP package: qJA = 100C/W; CERDIP package: qJA = 110C/W; SOIC package: qJA = 100C/W.

ORDERING GUIDE

Temperature Package Package
Model Range Description Option

METALIZATION PHOTOGRAPH

Dimensions shown in inches and (mm).
Contact factory for latest dimensions.
SUBSTRATE CONNECTED TO +V
S
1
AD845JN 0C to 70∞C 8-Lead PDIP N-8 AD845KN 0C to 70∞C 8-Lead PDIP N-8 AD845JR-16 0C to 70∞C 16-Lead SOIC R-16 AD845JR-16-REEL 0C to 70CTape and Reel R-16 AD845JR-16-REEL7 0C to 70CTape and Reel R-16 AD845AQ –40C to +85∞C 8-Lead CERDIP Q-8 AD845BQ –40C to +85∞C 8-Lead CERDIP Q-8 AD845SQ –55C to +125∞C 8-Lead CERDIP Q-8 AD845SQ/883B –55C to +125∞C 8-Lead CERDIP Q-8 5962-8964501PA
2
–55C to +125∞C 8-Lead CERDIP Q-8
AD845JCHIPS 0C to 70CDie
NOTES
1
N = Plastic DIP; Q = CERDIP; R = Small Outline IC (SOIC).
2
See military data sheet.
REV. E
–3–
AD845–Typical Performance Characteristics
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TPC 1. Input Voltage Swing vs. Supply Voltage
TPC 4. Quiescent Current vs. Supply Voltage
TPC 2. Output Voltage Swing vs. Supply Voltage
TPC 5. Input Bias Current vs. Temperature
TPC 3. Output Voltage Swing vs. Resistive Load
TPC 6. Magnitude of Output Impedance vs. Frequency
TPC 7. Input Bias Current vs. Common-Mode Voltage
TPC 8. Short-Circuit Current Limit vs. Temperature
–4–
TPC 9. Unity-Gain Bandwidth vs. Temperature
REV. E
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