Twisted-pair line drivers
Audio applications
General-purpose high current amplifiers
GENERAL DESCRIPTION
The AD8397 has two voltage feedback operational amplifiers
capable of driving heavy loads with excellent linearity. The
common-emitter, rail-to-rail output stage surpasses the output
voltage capability of typical emitter-follower output stages and
can swing to within 0.5 V of either rail while driving a 25 Ω
load. The low distortion, high output current, and wide output
dynamic range make the AD8397 ideal for applications that
require a large signal swing into a heavy load.
Fabricated with ADI’s high speed eXtra Fast Complementary
Bipolar High Voltage (XFCB-HV) process, the high bandwidth
and fast slew rate of the AD8397 keep distortion to a minimum
while also dissipating minimum power. The AD8397 is available
in a standard 8-lead SOIC package and, for higher power applications, a thermally enhanced 8-lead SOIC EPAD package. Both
packages can operate from −40°C to +85°C.
LOAD
= 25 Ω)
PIN CONFIGURATION
1
OUT1
2
–IN1
+IN1
3
–V
4
S
Figure 1. 8-Lead SOIC
1.50
1.25
1.00
0.75
0.50
0.25
(V)
0
OUT
–0.25
V
–0.50
–0.75
–1.00
–1.25
–1.50
02468101214161820
Figure 2. Output Swing, V
12
9
6
3
(V)
0
OUT
V
–3
–6
–9
–12
02468101214161820
Figure 3. Output Swing, V
8
+V
7
OUT2
–IN2
6
+IN2
5
TIME (µs)
= ±1.5 V, RL = 25 Ω
S
TIME (µs)
= ±12 V, RL = 100 Ω
S
S
05069-001
AD8397
05069-031
05069-032
Rev. 0
Information furnished by Analog Devices is believed to be accurate and reliable.
However, no responsibility is assumed by Analog Devices for its use, nor for any
infringements of patents or other rights of third parties that may result from its use.
Specifications subject to change without notice. No license is granted by implication
or otherwise under any patent or patent rights of Analog Devices. Trademarks and
registered trademarks are the property of their respective owners.
VS = ±1.5 V or +3 V (@ TA = 25°C, G = +1, RL = 25 Ω, unless otherwise noted).
Table 1.
Parameter Test Conditions/Comments Min Typ Max Unit
DYNAMIC PERFORMANCE
−3 dB Bandwidth V
0.1 dB Flatness V
Large Signal Bandwidth V
Slew Rate V
NOISE/DISTORTION PERFORMANCE
Distortion (Worst Harmonic) fC = 100 kHz, V
Input Voltage Noise f = 100 kHz 4.5 nV/√Hz
Input Current Noise f = 100 kHz 1.5 pA/√Hz
DC PERFORMANCE
Input Offset Voltage 1.0 2.5 mV
T
Input Offset Voltage Match 1.0 2.0 mV
Input Bias Current 200 900 nA
T
Input Offset Current 50 300 nA
Open-Loop Gain V
INPUT CHARACTERISTICS
Input Resistance f = 100 kHz 87 kΩ
Input Capacitance 1.4 pF
Common-Mode Rejection ∆VCM = ±1 V −71 −80 dB
OUTPUT CHARACTERISTICS
Output Resistance 0.2 Ω
+Swing R
−Swing R
+Swing R
−Swing R
Maximum Output Current SFDR ≤ −70 dBc, f = 100 kHz, V
POWER SUPPLY
Operating Range (Dual Supply) ±1.5 ±12.0 V
Supply Current 6 7 8.5 mA/Amp
Power Supply Rejection ∆VS = ±0.5 V −70 −82 dB
= 0.1 V p-p 50 MHz
OUT
= 0.1 V p-p 3.6 MHz
OUT
= 2.0 V p-p 9 MHz
OUT
= 0.8 V p-p 32 V/µs
OUT
= 1.4 V p-p, G = +2 −90 dBc
OUT
− T
MIN
MAX
− T
MIN
MAX
= ±0.5 V 81 88 dB
OUT
= 25 Ω +1.39 +1.43 V
LOAD
= 25 Ω −1.4 −1.37 V
LOAD
= 100 Ω +1.45 +1.48 V
LOAD
= 100 Ω −1.47 −1.44 V
LOAD
= 0.7 VP, R
OUT
= 4.1 Ω 170 mA
LOAD
2.5 mV
1.3 µA
P
P
P
P
Rev. 0 | Page 3 of 16
AD8397
VS = ±2.5V or +5 V (@ TA = 25°C, G = +1, RL = 25 Ω, unless otherwise noted).
Table 2.
Parameter Test Conditions/Comments Min Typ Max Unit
DYNAMIC PERFORMANCE
−3 dB Bandwidth V
0.1 dB Flatness V
Large Signal Bandwidth V
Slew Rate V
NOISE/DISTORTION PERFORMANCE
Distortion (Worst Harmonic) fC = 100 kHz, V
Input Voltage Noise f = 100 kHz 4.5 nV/√Hz
Input Current Noise f = 100 kHz 1.5 pA/√Hz
DC PERFORMANCE
Input Offset Voltage 1.0 2.4 mV
T
Input Offset Voltage Match 1.0 2.0 mV
Input Bias Current 200 900 nA
T
Input Offset Current 50 300 nA
Open-Loop Gain V
INPUT CHARACTERISTICS
Input Resistance f = 100 kHz 87 kΩ
Input Capacitance 1.4 pF
Common-Mode Rejection ∆VCM = ±1 V −76 −80 dB
OUTPUT CHARACTERISTICS
Output Resistance 0.2 Ω
+Swing R
−Swing R
+Swing R
−Swing R
Maximum Output Current SFDR ≤ −70 dBc, f = 100 kHz, V
POWER SUPPLY
Operating Range (Dual Supply) ±1.5 ±12.6 V
Supply Current 7 9 12 mA/Amp
Power Supply Rejection ∆VS = ±0.5 V −75 −85 dB
= 0.1 V p-p 60 MHz
OUT
= 0.1 V p-p 4.8 MHz
OUT
= 2.0 V p-p 14 MHz
OUT
= 2.0 V p-p 53 V/µs
OUT
= 2 V p-p, G = +2 −98 dBc
OUT
− T
MIN
MAX
− T
MIN
MAX
= ±1.0 V 85 90 dB
OUT
= 25 Ω +2.37 +2.42 V
LOAD
= 25 Ω −2.37 −2.32 V
LOAD
= 100 Ω +2.45 +2.48 V
LOAD
= 100 Ω −2.46 −2.42 V
LOAD
= 1.0 VP, R
OUT
= 4.3 Ω 230 mA
LOAD
2.5 mV
1.3 µA
P
P
P
P
Rev. 0 | Page 4 of 16
AD8397
VS = ±5 V or +10 V (@ TA = 25°C, G = +1, RL = 25 Ω, unless otherwise noted).
Table 3.
Parameter Test Conditions/Comments Min Typ Max Unit
DYNAMIC PERFORMANCE
−3 dB Bandwidth V
0.1 dB Flatness V
Large Signal Bandwidth V
Slew Rate V
NOISE/DISTORTION PERFORMANCE
Distortion (Worst Harmonic) fC = 100 kHz, V
Input Voltage Noise f = 100 kHz 4.5 nV/√Hz
Input Current Noise f = 100 kHz 1.5 pA/√Hz
DC PERFORMANCE
Input Offset Voltage 1.0 2.5 mV
T
Input Offset Voltage Match 1.0 2.0 mV
Input Bias Current 200 900 nA
T
Input Offset Current 50 300 nA
Open-Loop Gain V
INPUT CHARACTERISTICS
Input Resistance f = 100 kHz 87 kΩ
Input Capacitance 1.4 pF
Common-Mode Rejection ∆VCM = ±1 V −84 −94 dB
OUTPUT CHARACTERISTICS
Output Resistance 0.2 Ω
+Swing R
−Swing R
+Swing R
−Swing R
Maximum Output Current SFDR ≤ −80 dBc, f = 100 kHz, V
POWER SUPPLY
Operating Range (Dual Supply) ±1.5 ±12.6 V
Supply Current 7 9 12 mA/Amp
Power Supply Rejection ∆VS = ±0.5 V −76 −85 dB
= 0.1 V p-p 66 MHz
OUT
= 0.1 V p-p 6.5 MHz
OUT
= 2.0 V p-p 14 MHz
OUT
= 4.0 V p-p 53 V/µs
OUT
= 6 V p-p, G = +2 −94 dBc
OUT
− T
MIN
MAX
− T
MIN
MAX
= ±2.0 V 85 94 dB
OUT
= 25 Ω +4.7 +4.82 V
LOAD
= 25 Ω −4.74 −4.65 V
LOAD
= 100 Ω +4.92 +4.96 V
LOAD
= 100 Ω −4.92 −4.88 V
LOAD
= 3 VP, R
OUT
= 12 Ω 250 mA
LOAD
2.5 mV
1.3 µA
P
P
P
P
Rev. 0 | Page 5 of 16
AD8397
VS = ±12 V or +24 V (@ TA = 25°C, G = +1, RL = 25 Ω, unless otherwise noted).
Table 4.
Parameter Test Conditions/Comments Min Typ Max Unit
DYNAMIC PERFORMANCE
−3 dB Bandwidth V
0.1 dB Flatness V
Large Signal Bandwidth V
Slew Rate V
NOISE/DISTORTION PERFORMANCE
Distortion (Worst Harmonic) fC = 100 kHz, V
Input Voltage Noise f = 100 kHz 4.5 nV/√Hz
Input Current Noise f = 100 kHz 1.5 pA/√Hz
DC PERFORMANCE
Input Offset Voltage 1.0 3.0 mV
T
Input Offset Voltage Match 1.0 2.0 mV
Input Bias Current 200 900 nA
T
Input Offset Current 50 300 nA
Open-Loop Gain
INPUT CHARACTERISTICS
Input Resistance f = 100 kHz 87 kΩ
Input Capacitance 1.4 pF
Common-Mode Rejection VCM = ±1 V −85 −96 dB
OUTPUT CHARACTERISTICS
Output Resistance 0.2 Ω
+Swing R
−Swing R
Maximum Output Current SFDR ≤ −80 dBc, f = 100 kHz, V
POWER SUPPLY
Operating Range (Dual Supply) ±1.5 ±12.6 V
Supply Current 8.5 11 15 mA/Amp
Power Supply Rejection VS = ±0.5 V −76 −86 dB
= 0.1 V p-p 69 MHz
OUT
= 0.1 V p-p 7.6 MHz
OUT
= 2.0 V p-p 14 MHz
OUT
= 4.0 V p-p 53 V/µs
OUT
= 20 V p-p, G = +5 −84 dBc
OUT
− T
MIN
MAX
− T
MIN
MAX
= ±3.0 V
V
OUT
= 100 Ω +11.82 +11.89 V
LOAD
= 100 Ω −11.83 −11.77 V
LOAD
= 10 VP, R
OUT
= 32 Ω 310 mA
LOAD
2.5 mV
1.3 µA
90 96 dB
P
P
Rev. 0 | Page 6 of 16
AD8397
ABSOLUTE MAXIMUM RATINGS
Table 5.
Parameter Rating
Supply Voltage 26.4 V
Power Dissipation
1
See Figure 4
Storage Temperature −65°C to +125°C
Operating Temperature Range −40°C to +85°C
Lead Temperature Range
300°C
(Soldering 10 sec)
Junction Temperature 150°C
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
1
Thermal resistance for standard JEDEC 4-layer board:
8-lead SOIC: θ
8-Lead SOIC EPAD: θ
= 157.6°C/W
JA
= 47.2°C/W
JA
MAXIMUM POWER DISSIPATION
The maximum power that can be dissipated safely by
the AD8397 is limited by the associated rise in junction
temperature. The maximum safe junction temperature for
plastic encapsulated devices is determined by the glass
transition temperature of the plastic, approximately 150°C.
Temporarily exceeding this limit may cause a shift in
parametric performance due to a change in the stresses
exerted on the die by the package.
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
MAXIMUM POWER DISSIPATION (W)
0.5
0
–40–30–20–100 102030405060708090
Figure 4. Maximum Power Dissipation vs. Temperature
8-LEAD SOIC EPAD
8-LEAD SOIC
AMBIENT TEMPERATURE (°C)
TJ = 150°C
05069-020
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate
on the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation
or loss of functionality.
Rev. 0 | Page 7 of 16
AD8397
TYPICAL PERFORMANCE CHARACTERISTICS
100
80
60
40
20
0
–20
OUTPUT (mV)
–40
–60
–80
–100
020406080 100 120 140 160 180 200
Figure 5. Small Signal Pulse Response (G = +1, V
V
OUT
V
IN
05069-029
TIME (ns)
= ±5 V, RL = 25 Ω)
S
0
–10
–20
–30
–40
–50
CMRR (dB)
–60
–70
–80
–90
0.010.1110100
FREQUENCY (MHz)
OUT 1
OUT 2
Figure 8. Common -Mode Rejection v s. Frequenc y
= ±5 V, RL = 25 Ω)
(V
S
05069-005
5
4
V
IN
3
2
OUTPUT (V)
1
0
–1
02.01.81.61.41.21.00.80.60.40.2
Figure 6. Large Signal Pulse Response (0 V to 4 V, V
3.0
2.5
2.0
1.5
1.0
INPUT (V)
0.5
0
–0.5
–1.0
04080 120 160 200 240 280 320 360 400
V
V
OUT
TIME (µs)
= ±5 V, RL = 25 Ω)
S
IN
TIME (ns)
V
OUT
Figure 7. Output Overdrive Recovery
= ±5 V, Gain = +2, RL = 25 Ω)
(V
S
6
5
4
3
2
1
0
–1
–2
05069-022
OUTPUT (V)
05069-004
0
–10
–20
–30
–40
–50
–60
–70
CROSSTALK (dB)
–80
–90
–100
–110
0.010.1110100
OUT 1
OUT 2
FREQUENCY (MHz)
Figure 9. Output-to-Output Crosstalk vs. Frequency
= ±5 V, VO = 1 V p-p, RL = 25 Ω)
(V
S
0.3
0.2
0.1
0
GAIN (dB)
–0.1
–0.2
–0.3
0.1110
FREQUENCY (MHz)
VO = 100mV p-p
Figure 10. 0.1 dB Flatness
= ±5 V, VO = 0.1 V p-p, Gain = +1, RL = 25 Ω)
(V
S
05069-006
05069-007
Rev. 0 | Page 8 of 16
AD8397
10
G = +1
10
0
G = +2
–10
–20
NORMALIZED GAIN (dB)
–30
–40
0.011001010.1
FREQUENCY (MHz)
G = +10
Figure 11. Small Signal Frequency Response for Various Gains
= ±5 V, VO = 0.1 V p-p, RL = 25 Ω)
(V
S
10
0
–10
GAIN (dB)
–20
–30
–40
0.011001010.1
FREQUENCY (MHz)
12V
5V
2.5V
Figure 12. Small Signal Frequency Response for Various Supplies
(Gain = +1, V
= 0.1 V p-p, RL = 25 Ω)
O
05069-008
05069-009
0
–10
–20
NORMALIZED GAIN (dB)
–30
–40
0.010.1110100
FREQUENCY (MHz)
G = +1
G = +2
G = +10
Figure 14. Large Signal Frequency Response for Various Gains
= ±5 V, VO = 2 V p-p, RL = 25 Ω)
(V
S
20
10
0
–10
GAIN (dB)
–20
–30
–40
0.010.1110100
FREQUENCY (MHz)
12V
2.5V
5V
Figure 15. Large Signal Frequency Response for Various Supplies
(Gain = +1, V
= 2 V p-p, RL = 25 Ω)
O
05069-011
05069-012
100
80
60
40
20
0
OPEN-LOOP GAIN (dB)
–20
–40
0.0010.010.11101001000
FREQUENCY (MHz)
GAIN
PHASE
Figure 13. Open Loop Gain and Phase vs. Frequency
= ±5 V, RL = 25 Ω)
(V
S
135
90
45
0
–45
PHASE (Degrees)
–90
–135
05069-010
–180
Rev. 0 | Page 9 of 16
0
–10
–20
–30
–40
PSRR (dB)
–50
–60
–70
–80
0.010.11
+PSRR
Figure 16. Power Supply Rejection
(V
–PSRR
FREQUENCY (MHz)
= ±5 V, RL = 25 Ω)
S
10100
05069-013
AD8397
0
–10
–20
–30
–40
–50
–60
–70
–80
DISTORTION (dBc)
–90
–100
–110
–120
0.011010.1
–40
SECOND
HARMONIC
THIRD
HARMONIC
FREQUENCY (MHz)
Figure 17. Distortion vs. Frequency
= ±5 V, VO = 2 V p-p, G = +2, RL = 25 Ω)
(V
S
05069-023
–40
–50
–60
–70
–80
–90
DISTORTION (dBc)
–100
–110
–120
012345678910
SECOND
HARMONIC
THIRD
HARMONIC
OUTPUT VOLTAGE (V p-p)
Figure 20. Distortion vs. Output Voltage @ 100 kHz,
Figure 18. Distortion vs. Output Voltage @ 100 kHz,
= ±1.5 V, G = +2, RL = 25 Ω)
(V
S
–40
–50
–60
–70
–80
–90
DISTORTION (dBc)
–100
SECOND
HARMONIC
05069-024
–50
–60
–70
–80
–90
DISTORTION (dBc)
–100
–110
–120
SECOND
HARMONIC
THIRD
HARMONIC
02468 10 12 14 16 18 20 22 24
OUTPUT VOLTAGE (V p-p)
Figure 21. Distortion vs. Output Voltage @ 100 kHz,
= ±12 V, G = +5, RL = 50 Ω)
(V
S
05069-027
–110
–120
00.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
OUTPUT VOLTAGE (V p-p)
THIRD
HARMONIC
05069-025
Figure 19. Distortion vs. Output Voltage @ 100 kHz,
= ±2.5 V, G = +2, RL = 25 Ω)
(V
S
Rev. 0 | Page 10 of 16
AD8397
GENERAL DESCRIPTION
The AD8397 is a voltage feedback operational amplifier which
features an H-bridge input stage and common-emitter, rail-torail output stage. The AD8397 can operate from a wide supply
range, ±1.5 V to ±12 V. When driving light loads, the rail-to-rail
output is capable of swinging to within 0.2 V of either rail. The
output can also deliver high linear output current when driving
heavy loads, up to 310 mA into 32 Ω while maintaining −80 dBc
SFDR. The AD8397 is fabricated on Analog Devices’ proprietary
eXtra Fast Complementary Bipolar High Voltage process
(XFCB-HV).
POWER SUPPLY AND DECOUPLING
The AD8397 can be powered with a good quality, wellregulated, low noise supply from ±1.5 V to ±12 V. Careful
attention should be paid to decoupling the power supply. High
quality capacitors with low equivalent series resistance (ESR),
such as multilayer ceramic capacitors (MLCCs), should be used
to minimize the supply voltage ripple and power dissipation. A
0.1 µF MLCC decoupling capacitor(s) should be located no
more than 1/8 inch away from the power supply pin(s). A large
tantalum 10 µF to 47 µF capacitor is recommended to provide
good decoupling for lower frequency signals and to supply
current for fast, large signal changes at the AD8397 outputs.
LAYOUT CONSIDERATIONS
As with all high speed applications, careful attention should be
paid to printed circuit board (PCB) layout in order to prevent
associated board parasitics from becoming problematic. The
PCB should have a low impedance return path (or ground) to
the supply. Removing the ground plane from all layers in the
immediate area of the amplifier helps to reduce stray capacitances. The signal routing should be short and direct in order to
minimize the parasitic inductance and capacitance associated
with these traces. Termination resistors and loads should be
located as close as possible to their respective inputs and
outputs. Input traces should be kept as far apart as possible
from the output traces to minimize coupling (crosstalk) though
the board.
When the AD8397 is configured as a differential driver, as in
some line driving applications, a symmetrical layout should be
provided to the extent possible in order to maximize balanced
performance. When running differential signals over a long
distance, the traces on the PCB should be close together or
any differential wiring should be twisted together to minimize
the area of the inductive loop that is formed. This reduces the
radiated energy and makes the circuit less susceptible to RF
interference. Adherence to stripline design techniques for
long signal traces (greater than approximately 1 inch) is
recommended.
UNITY-GAIN OUTPUT SWING
When operating the AD8397 in a unity-gain configuration,
the output does not swing to the rails and is constrained by
the H-bridge input. This can be seen by comparing the output
overdrive recovery in Figure 7 and the input overdrive recovery
in Figure 22. To avoid overdriving the input and to realize the
full swing afforded by the rail-to-rail output stage, the amplifier
should be used in a gain of two or greater.
7
6
INPUT
OUTPUT
080 160 240 320 400
Figure 22. Unity-Gain Input Overdrive Recovery
480 560 640 720 800
TIME (ns)
05069-028
VOLTS
–1
5
4
3
2
1
0
Rev. 0 | Page 11 of 16
AD8397
CAPACITIVE LOAD DRIVE
When driving capacitive loads, many high speed operational
amplifiers exhibit peaking in their frequency response. In a
gain-of-two circuit, Figure 23 shows that the AD8397 can drive
capacitive loads up to 270 pF with only 3 dB of peaking. For
amplifiers with more limited capacitive load drive, a small series
resistor (R
the capacitive load in order to minimize peaking and ensure
device stability. Figure 24 shows that the use of a 2.2 Ω series
resistor can further extend the capacitive load drive of the
AD8397 out to 470 pF, while keeping the frequency response
peaking to within 3 dB.
) is generally used between the amplifier output and
S
5
0
–5
–10
–15
–20
GAIN (dB)
–25
–30
–35
–40
0.010.1110100
FREQUENCY (MHz)
220pF
150pF
100pF
Figure 23. Capacitive Load Peaking Without Series Resistor
270pF
05069-021
5
0
–5
–10
–15
–20
GAIN (dB)
–25
–30
–35
–40
0.010.1110100
FREQUENCY (MHz)
Figure 24. Capacitive Load Peaking with 2.2 Ω Series Resistor
390pF
270pF
470pF
330pF
05069-030
Rev. 0 | Page 12 of 16
AD8397
Y
OUTLINE DIMENSIONS
5.00 (0.1968)
4.80 (0.1890)
4.00 (0.1574)
3.80 (0.1497)
85
6.20 (0.2440)
5.80 (0.2284)
41
1.27 (0.0500)
BSC
0.25 (0.0098)
0.10 (0.0040)
COPLANARITY
0.10
CONTROLLING DIMENSIONS ARE IN MILLIMETERS; INCH DIMENSIONS
(IN PARENTHESES) ARE ROUNDED-OFF MILLIMETER EQUIVALENTS FOR
REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN
SEATING
PLANE
COMPLIANT TO JEDEC STANDARDS MS-012AA
1.75 (0.0688)
1.35 (0.0532)
0.51 (0.0201)
0.31 (0.0122)
0.25 (0.0098)
0.17 (0.0067)
0.50 (0.0196)
0.25 (0.0099)
8°
1.27 (0.0500)
0°
0.40 (0.0157)
× 45°
Figure 25. 8-Lead Standard Small Outline Package [SOIC]
Narrow Body (R-8)
Dimensions shown in millimeters and (inches)
5.00 (0.197)
4.90 (0.193)
4.00 (0.157)
3.90 (0.154)
3.80 (0.150)
0.25 (0.0098)
0.10 (0.0039)
COPLANARIT
0.10
CONTROLLING DIMENSIONS ARE IN MILLIMETER; INCHES DIMENSIONS
(IN PARENTHESES) ARE ROUNDED-OFF MILLIMETER EQUIVALENTS FOR
REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN.
4.80 (0.189)
85
TOP VIEW
1.27 (0.05)
BSC
1.75 (0.069)
1.35 (0.053)
SEATING
PLANE
COMPLIANT TO JEDEC STANDARDS MS-012-AA
6.20 (0.244)
6.00 (0.236)
41
5.80 (0.228)
0.51 (0.020)
0.31 (0.012)
BOTTOM VIEW
0.25 (0.0098)
0.17 (0.0068)
(PINS UP)
8°
0°
3.098 (0.122)
0.50 (0.020)
0.25 (0.010)
1.27 (0.050)
0.40 (0.016)
2.41 (0.095)
× 45
Figure 26. 8-Lead Standard Small Outline Package with Exposed Pad [SOIC_N_EP]
Narrow Body (RD-8-2)
Dimensions shown in millimeters and (inches)
ORDERING GUIDE
Model Temperature Package Package Description Package Outline
AD8397ARZ
AD8397ARZ-REEL1 −40°C to +85°C 8-Lead SOIC R-8
AD8397ARZ-REEL71 −40°C to +85°C 8-Lead SOIC R-8
AD8397ARDZ1 −40°C to +85°C 8-Lead SOIC-EPAD RD-8-2
AD8397ARDZ-REEL1 −40°C to +85°C 8-Lead SOIC-EPAD RD-8-2
AD8397ARDZ-REEL71 −40°C to +85°C 8-Lead SOIC-EPAD RD-8-2