Complete fully calibrated measurement/control system
Accurate rms-to-dc conversion from 50 Hz to 2.7 GHz
Input dynamic range of >60 dB: −52 dBm to +8 dBm in 50 Ω
Waveform and modulation independent:
(Such as GSM/CDMA/TDMA)
Linear-in-decibels output, scaled 50 mV/dB
Law conformance error of 0.5 dB
All functions temperature and supply stable
Operates from 4.5 V to 5.5 V at 24 mA from −40°C to +85°C
Power-down capability to 1.3 mW
APPLICATIONS
Power amplifier linearization/control loops
Transmitter power control
Transmitter signal strength indication (TSSI)
RF instrumentation
GENERAL DESCRIPTION
The AD8362 is a true rms-responding power detector that has a
60 dB measurement range. It is intended for use in a variety of
high frequency communication systems and in instrumentation
requiring an accurate response to signal power. It is easy to use,
requiring only a single supply of 5 V and a few capacitors. It can
operate from arbitrarily low frequencies to over 2.7 GHz and
can accept inputs that have rms values from 1 mV to at least
1 V rms, with peak crest factors of up to 6, exceeding the
requirements for accurate measurement of CDMA signals.
The input signal is applied to a resistive ladder attenuator
that comprises the input stage of a variable gain amplifier.
The 12 tap points are smoothly interpolated using a proprietary
technique to provide a continuously variable attenuator, which
is controlled by a voltage applied to the VSET pin. The resulting
signal is applied to a high performance broadband amplifier. Its
output is measured by an accurate square-law detector cell. The
fluctuating output is then filtered and compared with the output
of an identical squarer, whose input is a fixed dc voltage applied
to the VTGT pin, usually the accurate reference of 1.25 V
provided at the VREF pin.
The difference in the outputs of these squaring cells is
integrated in a high gain error amplifier, generating a voltage at
the VOUT pin with rail-to-rail capabilities. In a controller
mode, this low noise output can be used to vary the gain of a
host system’s RF amplifier, thus balancing the set point against
Rev. B
Information furnished by Analog Devices is believed to be accurate and reliable.
However, no responsibility is assumed by Analog Devices for its use, nor for any
infringements of patents or other rights of third parties that may result from its use.
Specifications subject to change without notice. No license is granted by implication
or otherwise under any patent or patent rights of Analog Devices. Trademarks and
registered trademarks are the property of their respective owners.
60 dB TruPwr™ Detector
AD8362
FUNCTIONAL BLOCK DIAGRAM
CHPF
DECL
INHI
INLO
AD8362
REF
the input power. Optionally, the voltage at VSET may be a
replica of the RF signal’s amplitude modulation, in which case
the overall effect is to remove the modulation component prior
to detection and low-pass filtering. The corner frequency of the
averaging filter may be lowered without limit by adding an
external capacitor at the CLPF pin. The AD8362 can be used to
determine the true power of a high frequency signal having a
complex low frequency modulation envelope (or simply as a
low frequency rms voltmeter). The high-pass corner generated
by its offset-nulling loop can be lowered by a capacitor added
on the CHPF pin.
Used as a power measurement device, VOUT is strapped to
VSET, and the output is then proportional to the logarithm of
the rms value of the input; that is, the reading is presented
directly in decibels and is conveniently scaled 1 V per decade,
that is, 50 mV/dB; other slopes are easily arranged. In controller
modes, the voltage applied to VSET determines the power level
required at the input to null the deviation from the setpoint.
The output buffer can provide high load currents.
The AD8362 is powered down by a logic high applied to the
PWDN pin, i.e., the consumption is reduced to about 1.3 mW. It
powers up within about 20 µs to its nominal operating current
of 20 mA at 25°C. The AD8362 is supplied in a 16-lead TSSOP
package for operation over the industrial temperature range of
VS = 5 V, T = 25°C, ZO = 50 Ω, differential input drive via Balun1, VTGT connec ted to VREF, VOUT tied to VSET, unl ess other wise note d.
Table 1.
Parameter Conditions Min Typ Max Unit
OVERALL FUNCTION
Maximum Input Frequency 2.7 GHz
Input Power Range (Differential)
Nominal Low End of Range −52 dBm
Nominal High End of Range +8 dBm
Input Voltage Range (Differential)
Nominal Low End of Range 1.12 mV rms
Nominal High End of Range 1.12 V rms
Input Power Range (S-Sided)
Nominal Low End of Range −40 dBm
Nominal High End of Range 0 dBm
Input Voltage Range (S-Sided) RMS Voltage at Input Terminals, f ≤ 2.7 GHz
Nominal Low End of Range 2.23 mV rms
Nominal High End of Range 223 V rms
Output Voltage Range RL ≥ 200 Ω to Ground
Nominal Low End of Range +100 mV
Nominal High End of Range In General, VS – 0.1 V +4.9 V
Output Scaling (Log Slope) 50 mV/dB
Law Conformance Error Over Central 60 dB Range, f ≤ 2.7 GHz ±0.5 dB
Available Output Range RL ≥ 200 Ω to Ground 0.1 4.9 V
Absolute Voltage Range
Nominal Low End of Range Measurement Mode, f = 900 MHz, PIN = −52 dBm 0.32 0.48 V
Nominal High End of Range Measurement Mode, f = 900 MHz, PIN = +8 dBm 3.44 3.52 V
Source/Sink Current VOUT Held at VS/2, to 1% Change 48 mA
Slew Rate Rising CL = Open 60 V/µs
Slew Rate Falling CL = Open 5 V/µs
Rise Time, 10% to 90% 0.2 V to 1.8 V, CLPF = 0 45 ns
Fall Time, 90% to 10% 1.8 V to 0.2 V, CLPF = 0 0.4 µs
Wideband Noise CLPF = 1000 pF, f
VSET INTERFACE Pin VSET
Nominal Input Voltage Range To ±1 dB Error 0.5 3.75 V
Input Resistance 68 kΩ
Scaling (Log Slope) f = 900 MHz 46 50 54 mV/dB
Scaling (Log Intercept) f = 900 MHz, into 1:4 Balun −64 −60 −56 dBm
−77 −73 −69 dBV
VOLTAGE REFERENCE Pin VREF
Output Voltage 25°C 1.225 1.25 1.275 V
Temperature Sensitivity3 −40°C ≤ TA ≤ +85°C 0.08 mV/°C
Output Resistance 8 Ω
dB Referred to 50 Ω Impedance Level,
f ≤ 2.7 GHz, into 1:4 Balun
RMS Voltage at Input Terminals,
f ≤ 2.7 GHz, into Input of the Device
Single-Ended Drive, CW Input, f ≤ 2.7 GHz,
into Input Resistive Network
SPOT
1
2
≤ 100 kHz 70 nV/√Hz
Rev. B | Page 3 of 36
AD8362
Parameter Conditions Min Typ Max Unit
RMS TARGET INTERFACE Pin VTGT
Nominal Input Voltage Range Measurement Range = 60 dB, to ±1 dB Error 0.625 2.5 V
Input Bias Current VTGT = 1.25 V −28 µA
VTGT = 0 V −52 µA
Incremental Input Resistance 52 kΩ
POWER-DOWN INTERFACE Pin PWDN
Logic Level to Enable Logic Low Enables
Logic Level to Disable Logic High Disables 3
Input Current Logic High
Logic Low
Enable Time
Disable Time
POWER SUPPLY INTERFACE Pin VPOS
Supply Voltage
Quiescent Current
Supply Current When Disabled 0.2 mA
900 MHz
Dynamic Range Error Referred to Best Fit Line (Linear Regression)
±1 dB Linearity, CW Input 65 dB ±0.5 dB Linearity, CW Input 62 dB
Deviation vs. Temperature Deviation from Output at 25°C
−40°C < TA < +85°C; PIN = −45 dBm −1.7 dB
−40°C < TA < +85°C; PIN = −20 dBm −1.4 dB
−40°C < TA < +85°C; PIN = +5 dBm −1 dB
Logarithmic Slope 46 50 54 mV/dB
Logarithmic Intercept −64 −60 −56 dBm
Deviation from CW Response 5.5 dB Peak-to-RMS Ratio (IS95 Reverse Link) 0.2 dB
12 dB Peak-to-RMS Ratio (WCDMA 4 Channels) 0.2 dB
18 dB Peak-to-RMS Ratio (WCDMA 15 Channels) 0.5 dB
1.9 GHz
Dynamic Range Error Referred to Best Fit Line (Linear Regression)
±1 dB Linearity, CW Input 65 dB ±0.5 dB Linearity, CW Input 62 dB
Deviation vs. Temperature Deviation from Output at 25°C
−40°C < TA < +85°C; PIN = −45 dBm −0.6 dB
−40°C < TA < +85°C; PIN = −20 dBm −0.5 dB
−40°C < TA < +85°C; PIN= +5 dBm −0.3 dB
Logarithmic Slope 51 mV/dB
Logarithmic Intercept −59 dBm
Deviation from CW Response 5.5 dB Peak-to-RMS Ratio (IS95 Reverse Link) 0.2 dB
12 dB Peak-to-RMS Ratio (WCDMA 4 Channels) 0.2 dB 18 dB Peak-to-RMS Ratio (WCDMA 15 Channels) 0.5 dB
From PWDN Low to VOUT within
10% of Final Value, CLPF = 1000 pF
From PWDN High to VOUT within
10% of Final Value, CLPF = 1000 pF
4.5 5 5.5 V
20 22 mA
230
5
14.5
2.5
1 V
V
µA
µA
ns
µs
Rev. B | Page 4 of 36
AD8362
Parameter Conditions Min Typ Max Unit
2.2 GHz
Dynamic Range Error Referred to Best Fit Line (Linear Regression)
±1 dB Linearity, CW Input 65 dB ±0.5 dB Linearity, CW Input 65 dB
Deviation vs. Temperature Deviation from Output at 25°C
−40°C < TA < +85°C; PIN = −45 dBm −1.8 dB
−40°C < TA < +85°C; PIN = −20 dBm −1.6 dB
−40°C < TA < +85°C; PIN= +5 dBm −1.3 dB
Logarithmic Slope 50.5 mV/dB
Logarithmic Intercept −61 dBm
Deviation from CW Response 5.5 dB Peak-to-RMS Ratio (IS95 Reverse Link) 0.2 dB
12 dB Peak-to-RMS Ratio (WCDMA 4 Channels) 0.2 dB 18 dB Peak-to-RMS Ratio (WCDMA 15 Channels) 0.5 dB
2.7 GHz
Dynamic Range Error Referred to Best Fit Line (Linear Regression) ±1 dB Linearity, CW Input 63 dB
±0.5 dB Linearity, CW Input 62 dB
Deviation vs. Temperature Deviation from Output at 25°C
−40°C < TA < +85°C; PIN = −40 dBm −5.3 dB
−40°C < TA < +85°C; PIN = −15 dBm −5.5 dB
−40°C < TA < +85°C; PIN = +15 dBm −4.8 dB
Logarithmic Slope 50.5 mV/dB
Logarithmic Intercept −58 dBm
Deviation from CW Response 5.5 dB Peak-to-RMS Ratio (IS95 Reverse Link) 0.2 dB
12 dB Peak-to-RMS Ratio (WCDMA 4 Channels) 0.2 dB
18 dB Peak-to-RMS Ratio (WCDMA 15 Channels) 0.4 dB
1
1:4 balun transformer, M/A-COM ETC 1.6-4-2-3.
2
Resistive network consists of 33 Ω shunt and 25 Ω series.
3
See Figure 36.
Rev. B | Page 5 of 36
AD8362
ABSOLUTE MAXIMUM RATINGS
Table 2.
Parameters Ratings
Supply Voltage VPOS 5.5 V
Input Power (into Input of Device) 13 dBm
Equivalent Voltage 2 V rms
Internal Power Dissipation 500 mW
θJA 125°C/W
Maximum Junction Temperature 125°C/W
Operating Temperature Range −40°C to +85°C
Storage Temperature Range −65°C to +150°C
Lead Temperature Range (Soldering 60 sec) 300°C
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the
human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
Rev. B | Page 6 of 36
AD8362
PIN CONFIGURATION AND FUNCTION DESCRIPTION
COMM
CHPF
DECL
INHI
INLO
DECL
PWDN
COMM
1
2
3
AD8362
4
TOP VIEW
5
(Not to Scale)
6
7
8
16
15
14
13
12
11
10
9
ACOM
VREF
VTGT
VPOS
VOUT
VSET
ACOM
CLPF
02923-B-002
Figure 2. Pin Configuration
Table 3. Pin Function Descriptions
Pin
No.
Mnemonic Description
Equivalent
Circuit
1, 8 COMM Common Connection. Connect via low impedance to system common.
2 CHPF Input HPF. Connect to common via a capacitor to determine 3 dB point of input signal high-pass filter.
3, 6 DECL
Decoupling Terminals for INHI and INLO. Connect to common via a large capacitance to complete
input circuit.
4 INHI High Signal Input Terminal. Part of a differential input port with INLO. Circuit A
5 INLO Low Signal Input Terminal. Part of a differential input port with INHI. Circuit A
7 PWDN Disable/Enable Control Input. Apply logic high voltage to shut down the AD8362.
9 CLPF
Connection for loop filter integration (averaging) capacitor, the other pin of which is usually
grounded via a resistor to improve loop stability and response time.
10, 16 ACOM Analog Common Connection for Output Amplifier.
11 VSET
The voltage applied to this pin sets the decibel value of the required RF input voltage that results in
Circuit B
zero current out of CLPF and thus the loop integrating capacitor.
12 VOUT Output of Error Amplifier. In measurement mode, normally connected directly to VSET. Circuit C
13 VPOS Connect to 5 V Power Supply.
14 VTGT
The logarithmic intercept voltage is proportional to the voltage applied to this pin. The use of a lower
Circuit D
target voltage increases the crest factor capacity.
15 VREF General-Purpose Reference Voltage Output of 1.25 V (usually connected only to VTGT). Circuit E