Analog Devices AD835AR, AD835AN Datasheet

250 MHz, Voltage Output

FEATURES Simple: Basic Function is W = XY + Z Complete: Minimal External Components Required Very Fast: Settles to 0.1% of FS in 20 ns DC-Coupled Voltage Output Simplifies Use High Differential Input Impedance X, Y and Z Inputs Low Multiplier Noise: 50 nV/√

APPLICATIONS Very Fast Multiplication, Division, Squaring Wideband Modulation and Demodulation Phase Detection and Measurement Sinusoidal Frequency Doubling Video Gain Control and Keying Voltage Controlled Amplifiers and Filters

PRODUCT DESCRIPTION

The AD835 is a complete four-quadrant voltage output analog multiplier fabricated on an advanced dielectrically isolated complementary bipolar process. It generates the linear product of its X and Y voltage inputs, with a –3 dB output bandwidth of 250 MHz (a small signal rise time of 1 ns). Full-scale (–1 V to +1 V) rise/fall times are 2.5 ns (with the standard R and the settling time to 0.1% under the same conditions is typically 20 ns.

Its differential multiplication inputs (X, Y) and its summing input (Z) are at high impedance. The low impedance output voltage (W) can provide up to ± 2.5 V and drive loads as low as 25 Ω. Normal operation is from ±5 V supplies.

Though providing state-of-the-art speed, the AD835 is simple to use and versatile. For example, as well as permitting the addition of a signal at the output, the Z input provides the means to operate the AD835 with voltage gains up to about ×10. In this capacity, the very low product noise of this multiplier (50 nV√

Hz) makes it much more useful than earlier products.

The AD835 is available in an 8-pin plastic mini-DIP package (N) and an 8-pin SOIC (R) and is specified to operate over the –40°C to +85°C industrial temperature range.

of 150 Ω)

4-Quadrant Multiplier

AD835

FUNCTIONAL BLOCK DIAGRAM

X1 X2

Y1 Y2

PRODUCT HIGHLIGHTS

1. The AD835 is the first monolithic 250 MHz four quadrant voltage output multiplier.

2. Minimal external components are required to apply the AD835 to a variety of signal processing applications.

3. High input impedances (100 kΩi2 pF) make signal source loading negligible.

4. High output current capability allows low impedance loads to be driven.

5. State of the art noise levels achieved through careful device optimization and the use of a special low noise bandgap voltage reference.

6. Designed to be easy to use and cost effective in applications which formerly required the use of hybrid or board level solutions.

X = X1 –X2

–Y2

Y = Y1

∑

Z INPUT

AD835

XY + Z

W OUTPUT

REV. A

Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices.

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AD835–SPECIFICA TIONS

(TA = +258C, VS = 65 V, RL = 150 V, CL ≤ 5 pF unless otherwise noted)

Model AD835AN/AR

(X1– X2)(Y 1–Y2)

TRANSFER FUNCTION

W =

Parameter Conditions Min Typ Max Unit

INPUT CHARACTERISTICS (X, Y)

Differential Voltage Range V Differential Clipping Level 61.2 ±1.4 V

= 0 ±1V

Low Frequency Nonlinearity X = ±1 V, Y = 1 V 0.3 0.5 % FS

vs. Temperature T

Y = ±1 V, X = 1 V 0.1 0.3 % FS

MIN

X = ±1 V, Y = 1 V 0.7 % FS

to T

MAX

Y = ±1 V, X = 1 V 0.5 % FS Common-Mode Voltage Range –2.5 +3 V Offset Voltage ±3 620 mV

vs. Temperature T

CMRR f ≤ 100 kHz; ±1 V p-p 70 dB

MIN

Bias Current 10 20 µA

vs. Temperature T

Offset Bias Current 2 µA

MIN

to T

MAX

Differential Resistance 100 kΩ Single-Sided Capacitance 2pF Feedthrough, X X = ±1 V, Y = 0 V –46 dB Feedthrough, Y Y = ±1 V, X = 0 V –60 dB

DYNAMIC CHARACTERISTICS

–3 dB Small-Signal Bandwidth 150 250 MHz –0.1 dB Gain Flatness Frequency 15 MHz Slew Rate W = –2.5 V to +2.5 V 1000 V/µs Differential Gain Error, X f = 3.58 MHz 0.3 % Differential Phase Error, X f = 3.58 MHz 0.2 Degrees Differential Gain Error, Y f = 3.58 MHz 0.1 % Differential Phase Error, Y f = 3.58 MHz 0.1 Degrees Harmonic Distortion X or Y = 10 dBm, 2nd and 3rd Harmonic

Fund = 10 MHz –70 dB

Fund = 50 MHz –40 dB Settling Time, X or Y To 0.1%, W = 2 V p-p 20 ns

SUMMING INPUT (Z)

Gain From Z to W, f ≤ 10 MHz 0.990 0.995 –3 dB Small-Signal Bandwidth 250 MHz Differential Input Resistance 60 kΩ Single Sided Capacitance 2pF Maximum Gain X, Y to W, Z Shorted to W, f = 1 kHz 50 dB Bias Current 50 µA

OUTPUT CHARACTERISTICS

Voltage Swing ±2.2 ±2.5 V

vs. Temperature T Voltage Noise Spectral Density X = Y = 0, f < 10 MHz 50 nV/√ Offset Voltage ±25 675 mV

vs. Temperature

Short Circuit Current 75 mA

MIN

Scale Factor Error ±5 68 % FS

vs. Temperature T Linearity (Relative Error)

vs. Temperature T

MIN

to T

to T to T

MAX

±2.0 V

±0.5 61.0 % FS

POWER SUPPLIES

Supply Voltage

For Specified Performance ±4.5 ±5 ±5.5 V Quiescent Supply Current 16 25 mA

vs. Temperature T PSRR at Output vs. Vp +4.5 V to +5.5 V 0.5 %/V

MIN

to T

MAX

PSRR at Output vs. Vn –4.5 V to –5.5 V 0.5 %/V

NOTES

= –40°C, T

MIN

Normalized to zero at +25°C.

Linearity is defined as residual error after compensating for input offset, output voltage offset and scale factor errors. All min and max specifications are guaranteed. Specifications in boldface are tested on all production units at final electrical test. Specifications subject to change without notice.

= +85°C.

MAX

+ Z

±25 mV

27 µA

±10 mV

±9 % FS ±1.25 % FS

26 mA

–2–

REV. A

AD835

FREQUENCY – Hz

–0.2

–0.3

–0.4

–0.5

–0.6

–0.1

MAGNITUDE – dB

X, Y CH = OdBm R

= 150Ω

≤ 5pF

1M 10M 100M300k

1M 10M 1G100M

–2

–4

–6

–8

–10

MAGNITUDE – dB

FREQUENCY – Hz

PHASE – Degrees

–90

–180

180

PHASE

X, Y, Z CH = 0dBm R

= 150Ω

≤ 5pF

GAIN

ABSOLUTE MAXIMUM RATINGS

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .±6V

Internal Power Dissipation

. . . . . . . . . . . . . . . . . . . .300 mW

Operating Temperature Range . . . . . . . . . . . . . –40°C to +85C

Storage Temperature Range . . . . . . . . . . . . –65°C to +150°C

Lead Temperature, Soldering 60 sec . . . . . . . . . . . . . . +300°C

ESD Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1500 V

NOTES

Stresses above those listed under “Absolute Maximum Ratings” may cause

permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum ratings for extended periods may affect device reliability.

Thermal Characteristics:

8-Pin Plastic DIP (N): θJC = 35°C/W; θJA = 90°C/W 8-Pin Plastic SOIC (R): θJC = 45°C/W; θJA = 115°C/W.

Typical Performance Characteristics

DG DP (NTSC) FIELD = 1 LINE = 18 Wfm FCC COMPOSITE

0.4

0.2

0.0

GAIN – %

–0.2

DIFFERENTIAL

–0.4

0.3

0.2

0.1

0.0

–0.1

DIFFERENTIAL

–0.2

PHASE – Degrees

–0.3

0.060.00 0.200.190.160.11

2ND1ST 6TH5TH4TH3RD

0.020.00 0.060.030.030.02

2ND1ST 6TH5TH4TH3RD

MIN = 0.00 MAX = 0.20 p-p/MAX = 0.20

MIN = 0.00 MAX = 0.06 p-p = 0.06

PIN CONNECTIONS 8-Pin Plastic DIP (N)

8-Pin Plastic SOIC (R)

AD835

TOP VIEW

(Not to Scale)

ORDERING GUIDE

Model Temperature Range Package Options*

AD835AN –40°C to +85°C N-8 AD835AR –40°C to +85°C R-8

*N = Plastic DIP; R = Small Outline IC Plastic Package (SOIC).

Figure 1. Typical Composite Output Differential Gain & Phase, NTSC for X Channel; f = 3.58 MHz, R

DG DP (NTSC) FIELD = 1 LINE = 18 Wfm FCC COMPOSITE

0.3

0.2

0.1

0.0

GAIN – %

–0.1

DIFFERENTIAL

–0.2 –0.3

0.20

0.10

0.00

–0.10

DIFFERENTIAL

PHASE – Degrees

–0.20

Figure 2. Typical Composite Output Differential Gain & Phase, NTSC for Y Channel; f = 3.58 MHz, R

REV. A

0.010.00 –0.20–0.010.00–0.00

2ND1ST 6TH5TH4TH3RD

0.030.00 0.160.100.070.04

2ND1ST 6TH5TH4TH3RD

MIN = –0.02 MAX = 0.01 p-p/MAX = 0.03

MIN = 0.00 MAX = 0.16 p-p = 0.16

= 150

Ω

= 150

Ω

Figure 3. Gain & Phase vs. Frequency of X, Y, Z Inputs

Figure 4. Gain Flatness to 0.1 dB

–3–

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