Analog Devices AD8354 a Datasheet

100 MHz to 2.7 GHz

RF Gain Block

AD8354

FEATURES
Fixed Gain of 20 dB
Operational Frequency of 100 MHz to 2.7 GHz
Linear Output Power-Up to 4 dBm
Input/Output Internally Matched to 50 ⍀
Temperature and Power Supply Stable
Noise Figure 4.2 dB
Power Supply 3 V or 5 V

APPLICATIONS
VCO Buffers
General Tx/Rx Amplification
Power Amplifier Predriver
Low Power Antenna Driver

GENERAL DESCRIPTION

The AD8354 is a broadband, fixed-gain linear amplifier that
operates at frequencies from 100 MHz up to 2.7 GHz. It is
intended for use in a wide variety of wireless devices including
cellular, broadband, CATV, and LMDS/MMDS applications.
By taking advantage of Analog Devices’ high performance
complementary Si bipolar process, these gain blocks provide
excellent stability over process, temperature, and power supply.
This amplifier is single-ended and internally matched to 50 Ω
with a return loss of greater than 10 dB over the full operating
frequency range.

The AD8354 provides linear output power of nearly 4.3 dBm
with 20 dB of gain at 900 MHz when biased at 3 V and an
external RF choke is connected between the power supply and
the output pin. The dc supply current is 24 mA. At 900 MHz,
the output third order intercept (OIP3) is greater than 18 dBm;
at 2.7 GHz, the OIP3 is 14 dBm.

FUNCTIONAL BLOCK DIAGRAM

BIAS AND VREF

INPT VOUT

COM1

AD8354

VPOS

COM2

The noise figure is 4.2 dB at 900 MHz. The reverse isolation

) is –33 dB at 900 MHz.

(S

12

The AD8354 can also operate with a 5 V power supply, in which
case no external inductor is required. Under these conditions,
the AD8354 delivers 4.8 dBm with 20 dB of gain at 900 MHz.
The dc supply current is 26 mA. At 900 MHz, the OIP3 is
greater than 19 dBm, and at 2.7 GHz, the OIP3 is 15 dBm.
The noise figure is 4.4 dB at 900 MHz. The reverse isolation
(S

) is –33 dB.

12

The AD8354 is fabricated on Analog Devices’ proprietary, high
performance 25 GHz Si complementary bipolar IC process. The
AD8354 is available in a chip scale package that utilizes an exposed
paddle for excellent thermal impedance and low impedance
electrical connection to ground. It operates over a –40°C to
+85°C temperature range.

An evaluation board is available.

REV. A

Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties that
may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Analog Devices. Trademarks and
registered trademarks are the property of their respective companies.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: [phone] www.analog.com
Fax: [phone] © 2003 Analog Devices, Inc. All rights reserved.

(VS = 3 V, TA = 25ⴗC, 100 nH external inductor between VOUT and VPOS, ZO = 50 ⍀,

AD8354–SPECIFICATIONS

unless otherwise noted.)

Parameter Conditions Min Typ Max Unit

OVERALL FUNCTION

Frequency Range 0.1 2.7 GHz
Gain f = 900 MHz 19.5 dB

f = 1.9 GHz 18.6 dB
f = 2.7 GHz 17.1 dB

Delta Gain f = 900 MHz, –40°C ≤ T

≤ +85°C –0.97 dB

A

f = 1.9 GHz, –40°C ≤ TA ≤ +85°C –1.05 dB
f = 2.7 GHz, –40°C ≤ T

≤ +85°C –1.33 dB

A

Gain Supply Sensitivity VPOS ± 10%, f = 900 MHz 0.54 dB/V

f = 1.9 GHz 0.37 dB/V
f = 2.7 GHz 0.2 dB/V

Reverse Isolation (S

)f = 900 MHz –33.5 dB

12

f = 1.9 GHz –38 dB
f = 2.7 GHz –32.9 dB

RF INPUT INTERFACE Pin RFIN

Input Return Loss f = 900 MHz 24.4 dB

f = 1.9 GHz 23 dB
f = 2.7 GHz 12.7 dB

RF OUTPUT INTERFACE Pin VOUT

Output Compression Point f = 900 MHz, 1 dB compression 4.6 dBm

f = 1.9 GHz 3.7 dBm
f = 2.7 GHz 2.7 dBm

Delta Compression Point f = 900 MHz, –40°C ≤ T

f = 1.9 GHz, –40°C ≤ T
f = 2.7 GHz, –40°C ≤ T

≤ +85°C 0.7 dB

A

≤ +85°C 0.7 dB

A

≤ +85°C 0.8 dB

A

Output Return Loss f = 900 MHz 23.6 dB

f = 1.9 GHz 16.5 dB
f = 2.7 GHz 14.6 dB

DISTORTION/NOISE

Output Third Order Intercept f = 900 MHz, ⌬f = 1 MHz, PIN = –28 dBm 19 dBm

f = 1.9 GHz, ⌬f = 1 MHz, P
f = 2.7 GHz, ⌬f = 1 MHz, P

Output Second Order Intercept f = 900 MHz, ⌬f = 1 MHz, P

= –28 dBm 16 dBm

IN

= –28 dBm 14.2 dBm

IN

= –28 dBm 29.7 dBm

IN

Noise Figure f = 900 MHz 4.2 dB

f = 1.9 GHz 4.8 dB
f = 2.7 GHz 5.4 dB

POWER INTERFACE Pin VPOS

Supply Voltage 2.7 3 3.3 V
Total Supply Current 16 23 31 mA
Supply Voltage Sensitivity 6.2 mA/V
Temperature Sensitivity –40°C ≤ TA ≤ +85°C33µA/°C

Specifications subject to change without notice.

REV. A–2–

AD8354

SPECIFICATIONS

(VS = 5 V, TA = 25ⴗC, no external inductor between VOUT and VPOS, ZO = 50 ⍀, unless otherwise noted.)

Parameter Conditions Min Typ Max Unit

OVERALL FUNCTION

Frequency Range 0.1 2.7 GHz
Gain f = 900 MHz 19.5 dB

f = 1.9 GHz 18.7 dB
f = 2.7 GHz 17.3 dB

Delta Gain f = 900 MHz, –40°C ≤ T

f = 1.9 GHz, –40°C ≤ T
f = 2.7 GHz, –40°C ≤ T

≤ +85°C –0.93 dB

A

≤ +85°C –0.99 dB

A

≤ +85°C –1.21 dB

A

Gain Supply Sensitivity VPOS ±10%, f = 900 MHz 0.32 dB/V

f = 1.9 GHz 0.21 dB/V
f = 2.7 GHz 0.08 dB/V

Reverse Isolation (S

)f = 900 MHz –33.5 dB

12

f = 1.9 GHz –37.6 dB
f = 2.7 GHz –32.9 dB

RF INPUT INTERFACE Pin RFIN

Input Return Loss f = 900 MHz 24.4 dB

f = 1.9 GHz 23.9 dB
f = 2.7 GHz 13.5 dB

RF OUTPUT INTERFACE Pin VOUT

Output 1 dB Compression f = 900 MHz 4.8 dBm

f = 1.9 GHz 4.6 dBm
f = 2.7 GHz 3.6 dBm

Delta Compression Point f = 900 MHz, –40°C ≤ T

f = 1.9 GHz, –40°C ≤ T
f = 2.7 GHz, –40°C ≤ T

≤ +85°C0.37dB

A

≤ +85°C –0.14 dB

A

≤ +85°C –0.05 dB

A

Output Return Loss f = 900 MHz 23.7 dB

f = 1.9 GHz 22.5 dB
f = 2.7 GHz 17.6 dB

DISTORTION/NOISE

Output Third Order Intercept f = 900 MHz, ⌬f = 50 MHz, PIN = –30 dBm 19.3 dBm

f = 1.9 GHz, ⌬f = 50 MHz, P
f = 2.7 GHz, ⌬f = 50 MHz, P

Output Second Order Intercept f = 900 MHz, ⌬f = 1 MHz, P

= –30 dBm 17.3 dBm

IN

= –30 dBm 15.3 dBm

IN

= –28 dBm 28.7 dBm

IN

Noise Figure f = 900 MHz 4.4 dB

f = 1.9 GHz 5 dB
f = 2.7 GHz 5.6 dB

POWER INTERFACE Pin VPOS

Supply Voltage 4.5 5 5.5 V
Total Supply Current T

= 27°C172534mA

A

Supply Voltage Sensitivity 4 mA/V
Temperature Sensitivity –40°C ≤ TA ≤ +85°C28µA/°C

Specifications subject to change without notice.

REV. A

–3–

AD8354

ABSOLUTE MAXIMUM RATINGS*

Supply Voltage VPOS . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.5 V

Input Power (re: 50 Ω) . . . . . . . . . . . . . . . . . . . . . . . . 10 dBm

Equivalent Voltage . . . . . . . . . . . . . . . . . . . . . . 700 mV rms

Internal Power Dissipation

Paddle Not Soldered . . . . . . . . . . . . . . . . . . . . . . . . 325 mW

Paddle Soldered . . . . . . . . . . . . . . . . . . . . . . . . . . . 812 mW

(Paddle Not Soldered) . . . . . . . . . . . . . . . . . . . . . 200°C/W

␪

JA

(Paddle Soldered) . . . . . . . . . . . . . . . . . . . . . . . . . . 80°C/W

␪

JA

Maximum Junction Temperature . . . . . . . . . . . . . . . . . 150°C

Operating Temperature Range . . . . . . . . . . . –40°C to +85°C

Storage Temperature Range . . . . . . . . . . . . –65°C to +150°C

Lead Temperature Range (Soldering, 60 sec) . . . . . . . . 240°C

*Stresses above those listed under Absolute Maximum Ratings may cause perma-

nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.

PIN CONFIGURATION

1

COM1

2

NC

3

INPT

4

NC = NO CONNECT

AD8354

TOP VIEW

(Not to Scale)

8

7

6

5

COM1

VOUT

VPOS

COM2COM2

PIN FUNCTION DESCRIPTIONS

Pin No. Mnemonic Description

1, 8 COM1 Device Common. Connect to low

impedance ground.

2NCNo Connection.

3INPT RF Input Connection. Must be

ac-coupled.

4, 5 COM2 Device Common. Connect to low

impedance ground.

6 VPOS Positive Supply Voltage.

7 VOUT RF Output Connection. Must be

ac-coupled.

ORDERING GUIDE

Temperature Package Package

Model Range Description Option Branding

AD8354ACP-R2 –40°C to +85°C 8-Lead LFCSP CP-8 JCA
AD8354ACP-REEL7 –40°C to +85°C 8-Lead LFCSP CP-8 JCA
AD8354-EVAL Evaluation Board

CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection. Although the
AD8354 features proprietary ESD protection circuitry, permanent damage may occur on devices
subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended
to avoid performance degradation or loss of functionality.

REV. A–4–

120

180

150

120

90

60

30

0

330

300

270

240

210

FREQUENCY (MHz)

0

500

GAIN (dB)

1000

25

20

15

10

5

GAIN AT –40ⴗC

GAIN AT +85ⴗC

GAIN AT +25ⴗC

1500 2000 2500 3000

0

FREQUENCY (MHz)

–40

500

REVERSE ISOLATION (dB)

1000

–15

–20

–25

–30

–35

S12 AT –40ⴗC

1500 2000 2500 3000

–10

–5

0

S12 AT +25ⴗC

S12 AT +85ⴗC

0

Typical Performance Characteristics–AD8354

90

60

150

180

210

240

270

300

TPC 1. S11 vs. Frequency, VS = 3 V, TA = 25⬚C,

≤

100 MHz

25

20

15

f ≤ 3.0 GHz

GAIN AT 3.0V

GAIN AT 3.3V

GAIN AT 2.7V

330

30

0

TPC 4. S22 vs. Frequency, VS = 3 V, TA = 25⬚C,

≤

100 MHz

f ≤ 3.0 GHz

GAIN (dB)

10

5

0

0 3000

1000 1500 2000 2500

500

FREQUENCY (MHz)

TPC 2. Gain vs. Frequency, VS = 2.7 V, 3.0 V, and

3.3 V, TA = 25⬚C

0

–5

–10

–15

–20

–25

REVERSE ISOLATION (dB)

–30

–35

–40

TPC 3. Reverse Isolation vs. Frequency, VS = 2.7 V,

0

S12 AT 2.7V

500

3 V, and 3.3 V, TA = 25⬚C

REV. A

1000

S12 AT 3.3V

1500 2000 2500 3000

FREQUENCY (MHz)

TPC 5. Gain vs. Frequency, VS = 3 V, TA = –40⬚C,
+25⬚C, and +85⬚C

S12 AT 3.0V

TPC 6. Reverse Isolation vs. Frequency, VS = 3 V,
TA = –40⬚C, +25⬚C, and +85⬚C

–5–