Analog Devices AD8350 a Datasheet
Low Distortion
1
2
3
4
8
7
6
5
AD8350
IN+ IN–
ENBL
OUT+
OUT–
V
CC
GND
+
–
GND
a
FEATURES
High Dynamic Range
Output IP3: +28 dBm: Re 50 @ 250 MHz
Low Noise Figure: 5.9 dB @ 250 MHz
Two Gain Versions:
AD8350-15: 15 dB
AD8350-20: 20 dB
–3 dB Bandwidth: 1.0 GHz
Single Supply Operation: 5 V to 10 V
Supply Current: 28 mA
Input/Output Impedance: 200
Single-Ended or Differential Input Drive
8-Lead SOIC Package and 8-Lead microSOIC Package
APPLICATIONS
Cellular Base Stations
Communications Receivers
RF/IF Gain Block
Differential A-to-D Driver
SAW Filter Interface
Single-Ended-to-Differential Conversion
High Performance Video
High Speed Data Transmission
1.0 GHz Differential Amplifier
AD8350
FUNCTIONAL BLOCK DIAGRAM
8-Lead SOIC and SOIC Packages (with Enable)
PRODUCT DESCRIPTION
The AD8350 series are high performance fully-differential
amplifiers useful in RF and IF circuits up to 1000 MHz. The
amplifier has excellent noise figure of 5.9 dB at 250 MHz. It
offers a high output third order intercept (OIP3) of +28 dBm
at 250 MHz. Gain versions of 15 dB and 20 dB are offered.
The AD8350 is designed to meet the demanding performance
requirements of communications transceiver applications. It
enables a high dynamic range differential signal chain, with
exceptional linearity and increased common-mode rejection.
The device can be used as a general purpose gain block, an
A-to-D driver, and high speed data interface driver, among
other functions. The AD8350 input can also be used as a singleended-to-differential converter.
The amplifier can be operated down to 5 V with an OIP3 of
+28 dBm at 250 MHz and slightly reduced distortion performance. The wide bandwidth, high dynamic range and temperature
stability make this product ideal for the various RF and IF
frequencies required in cellular, CATV, broadband, instrumentation and other applications.
The AD8350 is offered in an 8-lead single SOIC package and
µSOIC package. It operates from 5 V and 10 V power supplies,
drawing 28 mA typical. The AD8350 offers a power enable function for power-sensitive applications. The AD8350 is fabricated
using Analog Devices’ proprietary high speed complementary
bipolar process. The device is available in the industrial (–40°C to
+85°C) temperature range.
REV. A
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties that
may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Analog Devices.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781/329-4700 www.analog.com
Fax: 781/326-8703 © Analog Devices, Inc., 2001
(@ 25C, VS = 5 V, G = 15 dB, unless otherwise noted. All specifications refer to
AD8350–SPECIFICATIONS
differential inputs and differential outputs unless noted.)
Parameter Conditions Min Typ Max Unit
DYNAMIC PERFORMANCE
–3 dB Bandwidth VS = 5 V, V
V
= 10 V, V
S
Bandwidth for 0.1 dB Flatness V
Slew Rate V
Settling Time 0.1%, V
Gain (S21)
1
Gain Supply Sensitivity V
Gain Temperature Sensitivity T
Isolation (S12)
1
= 5 V, V
S
V
= 10 V, V
S
= 1 V p-p 2000 V/µs
OUT
VS = 5 V, f = 50 MHz 14 15 16 dB
= 5 V to 10 V, f = 50 MHz 0.003 dB/V
S
to T
MIN
f = 50 MHz –18 dB
= 1 V p-p 0.9 GHz
OUT
= 1 V p-p 1.1 GHz
OUT
= 1 V p-p 90 MHz
OUT
= 1 V p-p 90 MHz
OUT
= 1 V p-p 10 ns
OUT
MAX
–0.002 dB/°C
NOISE/HARMONIC PERFORMANCE
50 MHz Signal
Second Harmonic V
Third Harmonic V
Output Second Order Intercept
Output Third Order Intercept
2
2
= 5 V, V
S
= 10 V, V
V
S
= 5 V, V
S
V
= 10 V, V
S
= 1 V p-p –66 dBc
OUT
= 1 V p-p –67 dBc
OUT
= 1 V p-p –65 dBc
OUT
= 1 V p-p –70 dBc
OUT
VS = 5 V 58 dBm
V
= 10 V 58 dBm
S
VS = 5 V 28 dBm
= 10 V 29 dBm
V
S
250 MHz Signal
Second Harmonic V
Third Harmonic V
Output Second Order Intercept
Output Third Order Intercept
1 dB Compression Point (RTI)
2
2
2
= 5 V, V
S
= 10 V, V
V
S
= 5 V, V
S
V
= 10 V, V
S
= 1 V p-p –48 dBc
OUT
= 1 V p-p –49 dBc
OUT
= 1 V p-p –52 dBc
OUT
= 1 V p-p –61 dBc
OUT
VS = 5 V 39 dBm
V
= 10 V 40 dBm
S
VS = 5 V 24 dBm
= 10 V 28 dBm
V
S
VS = 5 V 2 dBm
V
= 10 V 5 dBm
S
Voltage Noise (RTI) f = 150 MHz 1.7 nV/√Hz
Noise Figure f = 150 MHz 6.8 dB
INPUT/OUTPUT CHARACTERISTICS
Differential Offset Voltage (RTI) V
Differential Offset Drift T
OUT+
MIN
– V
to T
OUT–
MAX
±1mV
0.02 mV/°C
Input Bias Current 15 µA
Input Resistance Real 200 Ω
CMRR f = 50 MHz –67 dB
Output Resistance Real 200 Ω
POWER SUPPLY
Operating Range 411.0V
Quiescent Current Powered Up, V
Powered Down, V
Powered Up, V
Powered Down, V
= 5 V 25 28 32 mA
S
= 5 V 3 3.8 5.5 mA
S
= 10 V 27 30 34 mA
S
= 10 V 3 4 6.5 mA
S
Power-Up/Down Switching 15 ns
Power Supply Rejection Ratio f = 50 MHz, VS ∆ = 1 V p-p –58 dB
OPERATING TEMPERATURE RANGE –40 +85 °C
NOTES
1
See Tables II–III for complete list of S-Parameters.
2
Re: 50 Ω.
Specifications subject to change without notice.
–2–
REV. A
AD8350
AD8350-20–SPECIFICATIONS
(@ 25C, VS = 5 V, G = 20 dB, unless otherwise noted. All specifications refer to
differential inputs and differential outputs unless noted.)
Parameter Conditions Min Typ Max Unit
DYNAMIC PERFORMANCE
–3 dB Bandwidth V
Bandwidth for 0.1 dB Flatness V
Slew Rate V
Settling Time 0.1%, V
Gain (S21)
1
Gain Supply Sensitivity V
Gain Temperature Sensitivity T
Isolation (S12)
1
= 5 V, V
S
= 10 V, V
V
S
= 5 V, V
S
= 10 V, V
V
S
= 1 V p-p 2000 V/µs
OUT
VS = 5 V, f = 50 MHz 19 20 21 dB
= 5 V to 10 V, f = 50 MHz 0.003 dB/V
S
to T
MIN
f = 50 MHz –22 dB
= 1 V p-p 0.7 GHz
OUT
= 1 V p-p 0.9 GHz
OUT
= 1 V p-p 90 MHz
OUT
= 1 V p-p 90 MHz
OUT
= 1 V p-p 15 ns
OUT
MAX
–0.002 dB/°C
NOISE/HARMONIC PERFORMANCE
50 MHz Signal
Second Harmonic V
Third Harmonic V
Output Second Order Intercept
Output Third Order Intercept
2
2
= 5 V, V
S
V
= 10 V, V
S
= 5 V, V
S
= 10 V, V
V
S
VS = 5 V 56 dBm
V
= 10 V 56 dBm
S
VS = 5 V 28 dBm
V
= 10 V 29 dBm
S
= 1 V p-p –65 dBc
OUT
= 1 V p-p –66 dBc
OUT
= 1 V p-p –66 dBc
OUT
= 1 V p-p –70 dBc
OUT
250 MHz Signal
Second Harmonic V
Third Harmonic V
Output Second Order Intercept
Output Third Order Intercept
1 dB Compression Point (RTI)
2
2
2
= 5 V, V
S
V
= 10 V, V
S
= 5 V, V
S
= 10 V, V
V
S
VS = 5 V 37 dBm
V
= 10 V 38 dBm
S
VS = 5 V 24 dBm
V
= 10 V 28 dBm
S
VS = 5 V –2.6 dBm
= 10 V 1.8 dBm
V
S
= 1 V p-p –45 dBc
OUT
= 1 V p-p –46 dBc
OUT
= 1 V p-p –55 dBc
OUT
= 1 V p-p –60 dBc
OUT
Voltage Noise (RTI) f = 150 MHz 1.7 nV/√Hz
Noise Figure f = 150 MHz 5.6 dB
INPUT/OUTPUT CHARACTERISTICS
Differential Offset Voltage (RTI) V
Differential Offset Drift T
OUT+
MIN
– V
to T
OUT–
MAX
±1mV
0.02 mV/°C
Input Bias Current 15 µA
Input Resistance Real 200 Ω
CMRR f = 50 MHz –52 dB
Output Resistance Real 200 Ω
POWER SUPPLY
Operating Range 411.0V
Quiescent Current Powered Up, V
Powered Down, V
Powered Up, V
Powered Down, V
= 5 V 25 28 32 mA
S
= 5 V 3 3.8 5.5 mA
S
= 10 V 27 30 34 mA
S
= 10 V 3 4 6.5 mA
S
Power-Up/Down Switching 15 ns
Power Supply Rejection Ratio f = 50 MHz, VS ∆ = 1 V p-p –45 dB
OPERATING TEMPERATURE RANGE –40 +85 °C
NOTES
1
See Tables II–III for complete list of S-Parameters.
2
Re: 50 Ω.
REV. A
–3–
AD8350
WARNING!
ESD SENSITIVE DEVICE
ABSOLUTE MAXIMUM RATINGS*
Supply Voltage, VS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 V
Input Power Differential . . . . . . . . . . . . . . . . . . . . . . +8 dBm
Internal Power Dissipation . . . . . . . . . . . . . . . . . . . . 400 mW
SOIC (R) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100°C/W
θ
JA
θ
µSOIC (RM) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 133°C/W
JA
Maximum Junction Temperature . . . . . . . . . . . . . . . . . 125°C
Operating Temperature Range . . . . . . . . . . . –40°C to +85°C
Storage Temperature Range . . . . . . . . . . . . –65°C to +150°C
Lead Temperature Range (Soldering 60 sec) . . . . . . . . . 300°C
*Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
PIN CONFIGURATION
IN+
ENBL
V
OUT+
CC
1
2
AD8350
TOP VIEW
3
(Not to Scale)
4
8
IN–
7
GND
6
GND
5
OUT–
ORDERING GUIDE
PIN FUNCTION DESCRIPTIONS
Pin Function Description
1, 8 IN+, IN– Differential Inputs. IN+ and IN–
should be ac-coupled (pins have a dc
bias of midsupply). Differential input
impedance is 200 Ω.
2 ENBL Power-up Pin. A high level (5 V) enables
the device; a low level (0 V) puts device
in sleep mode.
3V
CC
Positive Supply Voltage. 5 V to 10 V.
4, 5 OUT+, OUT– Differential Outputs. OUT+ and
OUT– should be ac-coupled (pins have
a dc bias of midsupply). Differential
input impedance is 200 Ω.
6, 7 GND Common External Ground Reference.
Model Temperature Range Package Description Package Option Brand Code
AD8350AR15 –40°C to +85°C 8-Lead SOIC SO-8 Standard
AD8350AR15-REEL –40°C to +85°C 8-Lead SOIC 13" Reel SO-8 Standard
AD8350AR15-REEL7 –40°C to +85°C 8-Lead SOIC 7" Reel SO-8 Standard
AD8350ARM15 –40°C to +85°C 8-Lead microSOIC RM-8 J2N
AD8350ARM15-REEL –40°C to +85°C 8-Lead microSOIC 13" Reel RM-8 J2N
AD8350ARM15-REEL7 –40°C to +85°C 8-Lead microSOIC 7" Reel RM-8 J2N
AD8350AR20 –40°C to +85°C 8-Lead SOIC SO-8 Standard
AD8350AR20-REEL –40°C to +85°C 8-Lead SOIC 13" Reel SO-8 Standard
AD8350AR20-REEL7 –40°C to +85°C 8-Lead SOIC 7" Reel SO-8 Standard
AD8350ARM20 –40°C to +85°C 8-Lead microSOIC RM-8 J2P
AD8350ARM20-REEL –40°C to +85°C 8-Lead microSOIC 13" Reel RM-8 J2P
AD8350ARM20-REEL7 –40°C to +85°C 8-Lead microSOIC 7" Reel RM-8 J2P
AD8350-EVAL SOIC Evaluation Board
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection. Although
the AD8350 features proprietary ESD protection circuitry, permanent damage may occur on
devices subjected to high-energy electrostatic discharges. Therefore, proper ESD precautions are
recommended to avoid performance degradation or loss of functionality.
–4–
REV. A
Typical Performance Characteristics–AD8350
FREQUENCY – MHz
ISOLATION – dB
–10
1
–15
–20
–25
–30
10 100 1k 10k
VCC = 10V
VCC = 5V
50
SUPPLY CURRENT – mA
40
30
20
10
0
–20
–40
VCC = 10V
VCC = 5V
0
20 40 60 80
TEMPERATURE – C
TPC 1. Supply Current vs.
Temperature
350
300
250
200
IMPEDANCE –
150
VCC = 10V
VCC = 5V
20
GAIN – dB
15
10
5
0
1
10 100 1k 10k
FREQUENCY – MHz
VCC = 10V
VCC = 5V
TPC 2. AD8350-15 Gain (S21) vs.
Frequency
350
300
250
200
IMPEDANCE –
150
VCC = 10V
VCC = 5V
GAIN – dB
25
20
15
10
5
1
10 100 1k 10k
VCC = 10V
VCC = 5V
FREQUENCY – MHz
TPC 3. AD8350-20 Gain (S21) vs.
Frequency
500
400
300
200
IMPEDANCE –
100
SOIC
SOIC
100
1
10 100 1k
FREQUENCY – MHz
TPC 4. AD8350-15 Input Imped ance vs. Frequency
800
SOIC
600
400
IMPEDANCE –
200
0
0 10 1000
FREQUENCY – MHz
SOIC
100
TPC 7. AD8350-20 Output Impedance vs. Frequency
100
1
10 100 1k
FREQUENCY – MHz
TPC 5. AD8350-20 Input Impedance
vs. Frequency
–5
–10
ISOLATION – dB
–15
–20
–25
10 100 1k 10k
1
FREQUENCY – MHz
VCC = 10V
VCC = 5V
TPC 8. AD8350-15 Isolation (S12)
vs. Frequency
0
0 10 1000
FREQUENCY – MHz
100
TPC 6. AD8350-15 Output Impedance
vs. Frequency
TPC 9. AD8350-20 Isolation (S12)
vs. Frequency
REV. A
–5–
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