Analog Devices AD8350 a Datasheet

Low Distortion
1
2
3
4
8
7
6
5
AD8350
IN+ IN–
ENBL
OUT+
OUT–
V
CC
GND
+
GND
a
FEATURES High Dynamic Range
Output IP3: +28 dBm: Re 50 @ 250 MHz Low Noise Figure: 5.9 dB @ 250 MHz Two Gain Versions:
AD8350-15: 15 dB
AD8350-20: 20 dB –3 dB Bandwidth: 1.0 GHz Single Supply Operation: 5 V to 10 V Supply Current: 28 mA Input/Output Impedance: 200 Single-Ended or Differential Input Drive 8-Lead SOIC Package and 8-Lead microSOIC Package
APPLICATIONS Cellular Base Stations Communications Receivers
RF/IF Gain Block
Differential A-to-D Driver
SAW Filter Interface Single-Ended-to-Differential Conversion High Performance Video High Speed Data Transmission
1.0 GHz Differential Amplifier AD8350
FUNCTIONAL BLOCK DIAGRAM
8-Lead SOIC and SOIC Packages (with Enable)
PRODUCT DESCRIPTION
The AD8350 series are high performance fully-differential amplifiers useful in RF and IF circuits up to 1000 MHz. The amplifier has excellent noise figure of 5.9 dB at 250 MHz. It offers a high output third order intercept (OIP3) of +28 dBm at 250 MHz. Gain versions of 15 dB and 20 dB are offered.
The AD8350 is designed to meet the demanding performance requirements of communications transceiver applications. It enables a high dynamic range differential signal chain, with exceptional linearity and increased common-mode rejection. The device can be used as a general purpose gain block, an A-to-D driver, and high speed data interface driver, among other functions. The AD8350 input can also be used as a single­ended-to-differential converter.
The amplifier can be operated down to 5 V with an OIP3 of +28 dBm at 250 MHz and slightly reduced distortion perfor­mance. The wide bandwidth, high dynamic range and temperature stability make this product ideal for the various RF and IF frequencies required in cellular, CATV, broadband, instrumen­tation and other applications.
The AD8350 is offered in an 8-lead single SOIC package and µSOIC package. It operates from 5 V and 10 V power supplies, drawing 28 mA typical. The AD8350 offers a power enable func­tion for power-sensitive applications. The AD8350 is fabricated using Analog Devices’ proprietary high speed complementary bipolar process. The device is available in the industrial (–40°C to +85°C) temperature range.
REV. A
Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781/329-4700 www.analog.com Fax: 781/326-8703 © Analog Devices, Inc., 2001
(@ 25C, VS = 5 V, G = 15 dB, unless otherwise noted. All specifications refer to
AD8350–SPECIFICATIONS
differential inputs and differential outputs unless noted.)
Parameter Conditions Min Typ Max Unit
DYNAMIC PERFORMANCE
–3 dB Bandwidth VS = 5 V, V
V
= 10 V, V
S
Bandwidth for 0.1 dB Flatness V
Slew Rate V Settling Time 0.1%, V Gain (S21)
1
Gain Supply Sensitivity V Gain Temperature Sensitivity T Isolation (S12)
1
= 5 V, V
S
V
= 10 V, V
S
= 1 V p-p 2000 V/µs
OUT
VS = 5 V, f = 50 MHz 14 15 16 dB
= 5 V to 10 V, f = 50 MHz 0.003 dB/V
S
to T
MIN
f = 50 MHz –18 dB
= 1 V p-p 0.9 GHz
OUT
= 1 V p-p 1.1 GHz
OUT
= 1 V p-p 90 MHz
OUT
= 1 V p-p 90 MHz
OUT
= 1 V p-p 10 ns
OUT
MAX
–0.002 dB/°C
NOISE/HARMONIC PERFORMANCE
50 MHz Signal
Second Harmonic V
Third Harmonic V
Output Second Order Intercept
Output Third Order Intercept
2
2
= 5 V, V
S
= 10 V, V
V
S
= 5 V, V
S
V
= 10 V, V
S
= 1 V p-p –66 dBc
OUT
= 1 V p-p –67 dBc
OUT
= 1 V p-p –65 dBc
OUT
= 1 V p-p –70 dBc
OUT
VS = 5 V 58 dBm V
= 10 V 58 dBm
S
VS = 5 V 28 dBm
= 10 V 29 dBm
V
S
250 MHz Signal
Second Harmonic V
Third Harmonic V
Output Second Order Intercept
Output Third Order Intercept
1 dB Compression Point (RTI)
2
2
2
= 5 V, V
S
= 10 V, V
V
S
= 5 V, V
S
V
= 10 V, V
S
= 1 V p-p –48 dBc
OUT
= 1 V p-p –49 dBc
OUT
= 1 V p-p –52 dBc
OUT
= 1 V p-p –61 dBc
OUT
VS = 5 V 39 dBm V
= 10 V 40 dBm
S
VS = 5 V 24 dBm
= 10 V 28 dBm
V
S
VS = 5 V 2 dBm V
= 10 V 5 dBm
S
Voltage Noise (RTI) f = 150 MHz 1.7 nV/Hz Noise Figure f = 150 MHz 6.8 dB
INPUT/OUTPUT CHARACTERISTICS
Differential Offset Voltage (RTI) V Differential Offset Drift T
OUT+
MIN
– V
to T
OUT–
MAX
±1mV
0.02 mV/°C Input Bias Current 15 µA Input Resistance Real 200 CMRR f = 50 MHz –67 dB Output Resistance Real 200
POWER SUPPLY
Operating Range 411.0V Quiescent Current Powered Up, V
Powered Down, V Powered Up, V Powered Down, V
= 5 V 25 28 32 mA
S
= 5 V 3 3.8 5.5 mA
S
= 10 V 27 30 34 mA
S
= 10 V 3 4 6.5 mA
S
Power-Up/Down Switching 15 ns Power Supply Rejection Ratio f = 50 MHz, VS = 1 V p-p –58 dB
OPERATING TEMPERATURE RANGE –40 +85 °C
NOTES
1
See Tables II–III for complete list of S-Parameters.
2
Re: 50 Ω.
Specifications subject to change without notice.
–2–
REV. A
AD8350
AD8350-20–SPECIFICATIONS
(@ 25C, VS = 5 V, G = 20 dB, unless otherwise noted. All specifications refer to
differential inputs and differential outputs unless noted.)
Parameter Conditions Min Typ Max Unit
DYNAMIC PERFORMANCE
–3 dB Bandwidth V
Bandwidth for 0.1 dB Flatness V
Slew Rate V Settling Time 0.1%, V Gain (S21)
1
Gain Supply Sensitivity V Gain Temperature Sensitivity T Isolation (S12)
1
= 5 V, V
S
= 10 V, V
V
S
= 5 V, V
S
= 10 V, V
V
S
= 1 V p-p 2000 V/µs
OUT
VS = 5 V, f = 50 MHz 19 20 21 dB
= 5 V to 10 V, f = 50 MHz 0.003 dB/V
S
to T
MIN
f = 50 MHz –22 dB
= 1 V p-p 0.7 GHz
OUT
= 1 V p-p 0.9 GHz
OUT
= 1 V p-p 90 MHz
OUT
= 1 V p-p 90 MHz
OUT
= 1 V p-p 15 ns
OUT
MAX
–0.002 dB/°C
NOISE/HARMONIC PERFORMANCE
50 MHz Signal
Second Harmonic V
Third Harmonic V
Output Second Order Intercept
Output Third Order Intercept
2
2
= 5 V, V
S
V
= 10 V, V
S
= 5 V, V
S
= 10 V, V
V
S
VS = 5 V 56 dBm V
= 10 V 56 dBm
S
VS = 5 V 28 dBm V
= 10 V 29 dBm
S
= 1 V p-p –65 dBc
OUT
= 1 V p-p –66 dBc
OUT
= 1 V p-p –66 dBc
OUT
= 1 V p-p –70 dBc
OUT
250 MHz Signal
Second Harmonic V
Third Harmonic V
Output Second Order Intercept
Output Third Order Intercept
1 dB Compression Point (RTI)
2
2
2
= 5 V, V
S
V
= 10 V, V
S
= 5 V, V
S
= 10 V, V
V
S
VS = 5 V 37 dBm V
= 10 V 38 dBm
S
VS = 5 V 24 dBm V
= 10 V 28 dBm
S
VS = 5 V –2.6 dBm
= 10 V 1.8 dBm
V
S
= 1 V p-p –45 dBc
OUT
= 1 V p-p –46 dBc
OUT
= 1 V p-p –55 dBc
OUT
= 1 V p-p –60 dBc
OUT
Voltage Noise (RTI) f = 150 MHz 1.7 nV/Hz Noise Figure f = 150 MHz 5.6 dB
INPUT/OUTPUT CHARACTERISTICS
Differential Offset Voltage (RTI) V Differential Offset Drift T
OUT+
MIN
– V
to T
OUT–
MAX
±1mV
0.02 mV/°C Input Bias Current 15 µA Input Resistance Real 200 CMRR f = 50 MHz –52 dB Output Resistance Real 200
POWER SUPPLY
Operating Range 411.0V Quiescent Current Powered Up, V
Powered Down, V Powered Up, V Powered Down, V
= 5 V 25 28 32 mA
S
= 5 V 3 3.8 5.5 mA
S
= 10 V 27 30 34 mA
S
= 10 V 3 4 6.5 mA
S
Power-Up/Down Switching 15 ns Power Supply Rejection Ratio f = 50 MHz, VS = 1 V p-p –45 dB
OPERATING TEMPERATURE RANGE –40 +85 °C
NOTES
1
See Tables II–III for complete list of S-Parameters.
2
Re: 50 Ω.
REV. A
–3–
AD8350
WARNING!
ESD SENSITIVE DEVICE
ABSOLUTE MAXIMUM RATINGS*
Supply Voltage, VS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 V
Input Power Differential . . . . . . . . . . . . . . . . . . . . . . +8 dBm
Internal Power Dissipation . . . . . . . . . . . . . . . . . . . . 400 mW
SOIC (R) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100°C/W
θ
JA
θ
µSOIC (RM) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 133°C/W
JA
Maximum Junction Temperature . . . . . . . . . . . . . . . . . 125°C
Operating Temperature Range . . . . . . . . . . . –40°C to +85°C
Storage Temperature Range . . . . . . . . . . . . –65°C to +150°C
Lead Temperature Range (Soldering 60 sec) . . . . . . . . . 300°C
*Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
PIN CONFIGURATION
IN+
ENBL
V
OUT+
CC
1
2
AD8350
TOP VIEW
3
(Not to Scale)
4
8
IN–
7
GND
6
GND
5
OUT–
ORDERING GUIDE
PIN FUNCTION DESCRIPTIONS
Pin Function Description
1, 8 IN+, IN– Differential Inputs. IN+ and IN–
should be ac-coupled (pins have a dc bias of midsupply). Differential input impedance is 200 Ω.
2 ENBL Power-up Pin. A high level (5 V) enables
the device; a low level (0 V) puts device in sleep mode.
3V
CC
Positive Supply Voltage. 5 V to 10 V.
4, 5 OUT+, OUT– Differential Outputs. OUT+ and
OUT– should be ac-coupled (pins have a dc bias of midsupply). Differential input impedance is 200 Ω.
6, 7 GND Common External Ground Reference.
Model Temperature Range Package Description Package Option Brand Code
AD8350AR15 –40°C to +85°C 8-Lead SOIC SO-8 Standard AD8350AR15-REEL –40°C to +85°C 8-Lead SOIC 13" Reel SO-8 Standard AD8350AR15-REEL7 –40°C to +85°C 8-Lead SOIC 7" Reel SO-8 Standard AD8350ARM15 –40°C to +85°C 8-Lead microSOIC RM-8 J2N AD8350ARM15-REEL –40°C to +85°C 8-Lead microSOIC 13" Reel RM-8 J2N AD8350ARM15-REEL7 –40°C to +85°C 8-Lead microSOIC 7" Reel RM-8 J2N AD8350AR20 –40°C to +85°C 8-Lead SOIC SO-8 Standard AD8350AR20-REEL –40°C to +85°C 8-Lead SOIC 13" Reel SO-8 Standard AD8350AR20-REEL7 –40°C to +85°C 8-Lead SOIC 7" Reel SO-8 Standard AD8350ARM20 –40°C to +85°C 8-Lead microSOIC RM-8 J2P AD8350ARM20-REEL –40°C to +85°C 8-Lead microSOIC 13" Reel RM-8 J2P AD8350ARM20-REEL7 –40°C to +85°C 8-Lead microSOIC 7" Reel RM-8 J2P AD8350-EVAL SOIC Evaluation Board
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the AD8350 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high-energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.
–4–
REV. A
Typical Performance Characteristics–AD8350
FREQUENCY – MHz
ISOLATION – dB
–10
1
15
20
25
30
10 100 1k 10k
VCC = 10V
VCC = 5V
50
SUPPLY CURRENT – mA
40
30
20
10
0
20
40
VCC = 10V
VCC = 5V
0
20 40 60 80
TEMPERATURE – C
TPC 1. Supply Current vs. Temperature
350
300
250
200
IMPEDANCE –
150
VCC = 10V
VCC = 5V
20
GAIN – dB
15
10
5
0
1
10 100 1k 10k
FREQUENCY – MHz
VCC = 10V
VCC = 5V
TPC 2. AD8350-15 Gain (S21) vs. Frequency
350
300
250
200
IMPEDANCE –
150
VCC = 10V
VCC = 5V
GAIN – dB
25
20
15
10
5
1
10 100 1k 10k
VCC = 10V
VCC = 5V
FREQUENCY – MHz
TPC 3. AD8350-20 Gain (S21) vs. Frequency
500
400
300
200
IMPEDANCE –
100
SOIC
SOIC
100
1
10 100 1k
FREQUENCY – MHz
TPC 4. AD8350-15 Input Imped­ ance vs. Frequency
800
SOIC
600
400
IMPEDANCE –
200
0
0 10 1000
FREQUENCY – MHz
SOIC
100
TPC 7. AD8350-20 Output Imped­ance vs. Frequency
100
1
10 100 1k
FREQUENCY – MHz
TPC 5. AD8350-20 Input Impedance vs. Frequency
5
10
ISOLATION dB
15
20
25
10 100 1k 10k
1
FREQUENCY – MHz
VCC = 10V
VCC = 5V
TPC 8. AD8350-15 Isolation (S12) vs. Frequency
0
0 10 1000
FREQUENCY – MHz
100
TPC 6. AD8350-15 Output Impedance vs. Frequency
TPC 9. AD8350-20 Isolation (S12) vs. Frequency
REV. A
–5–
AD8350
p
FREQUENCY – MHz
1dB COMPRESSION – dBm (Re: 50)
0
100 200 300 400 500 600
7.5
5.0
2.5
0
2.5
5.0
VCC = 10V
VCC = 5V
INPUT REFERRED
10.0
–40
V
= 1V p-p
OUT
45
50
55
60
65
DISTORTION dBc
70
75
80
0
50 100 150 200 250 300
FUNDAMENTAL FREQUENCY – MHz
HD2 (VCC = 10V)
HD2 (VCC = 5V)
HD3 (VCC = 5V)
HD3 (VCC = 10V)
TPC 10. AD8350-15 Harmonic Distortion vs. Frequency
45
55
65
DISTORTION dBc
75
FO = 50MHz
HD2 (VCC = 5V)
HD3 (VCC = 5V)
HD2 (VCC = 10V)
HD3 (VCC = 10V)
–40
V
= 1V p-p
OUT
45
50
55
60
65
DISTORTION dBc
70
75
80
0
HD2 (VCC = 5V)
HD2 (VCC = 10V)
HD3 (VCC = 5V)
HD3 (VCC = 10V)
50 100 150 200 250 300
FUNDAMENTAL FREQUENCY – MHz
TPC 11. AD8350-20 Harmonic Dis­tortion vs. Frequency
66
61
56
51
46
OIP2 – dBm (Re: 50)
41
VCC = 10V
VCC = 5V
–45
FO = 50MHz
HD3 (VCC = 5V)
HD2 (VCC = 5V)
55
65
HD2 (VCC = 10V)
DISTORTION – dBc
75
85
0
HD3 (VCC = 10V)
0.5 1 1.5 2 2.5 3 3.5 OUTPUT VOLTAGE – V p-p
TPC 12. AD8350-15 Harmonic Distor­tion vs. Differential Output Voltage
66
61
56
51
46
OIP2 – dBm (Re: 50)
41
VCC = 10V
VCC = 5V
–85
0
0.5 1 1.5 2 2.5 3 3.5 OUTPUT VOLTAGE – V p-
TPC 13. AD8350-20 Harmonic Distor­tion vs. Differential Output Voltage
41
36
VCC = 10V
VCC = 5V
FREQUENCY – MHz
31
26
21
OIP3 – dBm (Re: 50)
16
11
0
50 100 150 200 250 300
TPC 16. AD8350-15 Output Referred IP3 vs. Frequency
36
0
50 100 150 200 250 300
FREQUENCY – MHz
TPC 14. AD8350-15 Output Referred IP2 vs. Frequency
41
36
31
26
21
OIP3 – dBm (Re: 50)
16
11
0
50 100 150 200 250 300
VCC = 10V
VCC = 5V
FREQUENCY – MHz
TPC 17. AD8350-20 Output Referred IP3 vs. Frequency
36
0
50 100 150 200 250 300
FREQUENCY – MHz
TPC 15. AD8350-20 Output Referred IP2 vs. Frequency
TPC 18. AD8350-15 1 dB Compres­sion vs. Frequency
–6–
REV. A
AD8350
2.5
5.0
1dB COMPRESSION dBm (Re: 50)
7.5
7.5
5.0
2.5
0
VCC = 5V
0
100 200 300 400 500 600
FREQUENCY – MHz
INPUT REFERRED
VCC = 10V
TPC 19. AD8350-20 1 dB Compres­sion vs. Frequency
25
20
15
10
5
0
GAIN – dB
5
10
15
20
2345678910
1
VCC – Volts
AD8350-20
AD8350-15
TPC 22. AD8350 Gain (S21) vs. Supply Voltage
10
9
NOISE FIGURE – dB
8
7
6
5
0
VCC = 10V
VCC = 5V
50 100 150 200 250 300 350 400 450 500
FREQUENCY – MHz
TPC 20. AD8350-15 Noise Figure vs. Frequency
100
OUTPUT OFFSET – mV
50
100
150
200
250
50
0
20
40
V
+ (VCC = 5V)
OUT
V
– (VCC = 5V)
OUT
V
+ (VCC = 10V)
OUT
V
– (VCC = 10V)
OUT
0
20 40 60 80
TEMPERATURE – C
TPC 23. AD8350 Output Offset Volt­age vs. Temperature
10
9
8
7
NOISE FIGURE – dB
6
5
0
50 100 150 200 250 300 350 400 450 500
VCC = 10V
VCC = 5V
FREQUENCY – MHz
TPC 21. AD8350-20 Noise Figure vs. Frequency
–20
VCC = 5V
30
40
PSRR dB
50
60
70
80
90
AD8350-20
AD8350-15
1
10 100 1k
FREQUENCY – MHz
TPC 24. AD8350 PSRR vs. Frequency
–20
VCC = 5V
PSRR – dB
30
40
50
60
70
80
90
1
AD8350-20
AD8350-15
10 100 1k
FREQUENCY – MHz
TPC 25. AD8350 CMRR vs. Frequency
REV. A
500mV
V
OUT
VCC = 5V
ENBL
5V
30ns
TPC 26. AD8350 Power-Up/Down Response Time
–7–
AD8350
APPLICATIONS Using the AD8350
Figure 1 shows the basic connections for operating the AD8350. A single supply in the range 5 V to 10 V is required. The power supply pin should be decoupled using a 0.1 µF capacitor. The ENBL pin is tied to the positive supply or to 5 V (when V
CC
= 10 V) for normal operation and should be pulled to ground to put the device in sleep mode. Both the inputs and the outputs have dc bias levels at midsupply and should be ac-coupled.
Also shown in Figure 1 are the impedance balancing requirements, either resistive or reactive, of the input and output. With an input and output impedance of 200 , the AD8350 should be driven by a 200 source and loaded by a 200 impedance. A reactive match can also be implemented.
5
4
C5
0.1F
C4
0.001F
C3
0.001F
LOAD
Z = 200
SOURCE
Z = 100
Z = 100
C2
0.001F
C1
0.001F
ENBL (5V)
8
6
7
AD8350
+
2
1
3
+VS (5V TO 10V)
Figure 1. Basic Connections for Differential Drive
Figure 2 shows how the AD8350 can be driven by a single­ended source. The unused input should be ac-coupled to ground. When driven single-endedly, there will be a slight imbalance in the differential output voltages. This will cause an increase in the second order harmonic distortion (at 50 MHz, with V 10 V and V
= 1 V p-p, –59 dBc was measured for the second
OUT
CC
=
harmonic on AD8350-15).
LOAD
C2
0.001F
7
8
6
C4
5
0.001F
AD8350
SOURCE
Z = 200
C1
0.001F
ENBL (5V)
1
+V
+
3
2
(5V TO 10V)
S
4
C5
0.1F
C3
0.001F
Z = 200
Figure 2. Basic Connections for Single-Ended Drive
Reactive Matching
In practical applications, the AD8350 will most likely be matched using reactive matching components as shown in Figure 3. Matching components can be calculated using a Smith Chart or by using a resonant approach to determine the matching network that results in a complex conjugate match. In either situation, the circuit can be analyzed as a single-ended equivalent circuit to ease calculations as shown in Figure 4.
–8–
RS/2
V
S
R
S
LS/2
C
AC
876
AD8350
C
P
/2
LS/2
C
AC
ENBL (5V)
+
1234
(5V TO 10V)
+V
S
5
0.1F
C
AC
C
AC
LS/2
C
P
LS/2
R
LOAD
Figure 3. Reactively Matching the Input and Output
C
P
C
AC
C
AC
ENBL (5V)
876
AD8350
+
1234
+VS (5V TO 10V)
L
S
R
S
V
S
5
0.1F
C
AC
C
AC
L
S
C
P
R
LOAD
Figure 4. Single-Ended Equivalent Circuit
When the source impedance is smaller than the load impedance, a step-up matching network is required. A typical step-up network is shown on the input of the AD8350 in Figure 3. For purely resistive source and load impedances the resonant approach may be used. The input and output impedance of the AD8350 can be modeled as a real 200 resistance for operating frequencies less than 100 MHz. For signal frequencies exceeding 100 MHz, classi­cal Smith Chart matching techniques should be invoked in order to deal with the complex impedance relationships. Detailed S parameter data measured differentially in a 200 system can be found in Tables II and III.
For the input matching network the source resistance is less than the input resistance of the AD8350. The AD8350 has a nominal 200 input resistance from Pins 1 to 8. The reactance of the ac-coupling capacitors, C
, should be negligible if 100 nF
AC
capacitors are used and the lowest signal frequency is greater than 1 MHz. If the series reactance of the matching network inductor is defined to be X of the matching capacitor to be X
RR
×
=
S
S LOAD
X
P
X
= 2 π f LS, and the shunt reactance
S
= (2 π f CP)–1, then:
P
R
XR
where
PLOAD
S
RR
LOAD S
(1)
For a 70 MHz application with a 50 source resistance, and assuming the input impedance is 200 , or R then X
= 115.5 and XS = 86.6 , which results in the follow-
P
= RIN = 200 Ω,
LOAD
ing component values:
CP = (2 π × 70 × 106 × 115.5)–1 = 19.7 pF and
= 86.6 × (2 π × 70 × 106)–1 = 197 nH
L
S
REV. A
AD8350
For the output matching network, if the output source resis­tance of the AD8350 is greater than the terminating load resistance, a step-down network should be employed as shown on the output of Figure 3. For a step-down matching network, the series and parallel reactances are calculated as:
X
RR
=
S
×
S LOAD
X
P
XR
where
PS
R
LOAD
RR
S LOAD
(2)
For a 10 MHz application with the 200 output source resistance of the AD8350, R 50 , then X
= 115.5 and XS = 86.6 , which results in
P
= 200 , and a 50 load termination, R
S
LOAD
=
the following component values:
CP = (2 π × 10 × 106 × 115.5)–1 = 138 pF and
= 86.6 × (2 π × 10 × 106)–1 = 1.38 µH
L
S
The same results can be obtained using the plots in Figure 5 and Figure 6. Figure 5 shows the normalized shunt reactance versus the normalized source resistance for a step-up matching network, R
S
< R can be found for a given value of R is then calculated using X
. By inspection, the appropriate reactance
LOAD
= RS R
S
S/RLOAD
LOAD/XP.
. The series reactance
The same technique can be used to design the step-down matching network using Figure 6.
2
1.8
LOAD
1.6
/R
P
1.4
1.2
0.8
0.6
0.4
NORMALIZED REACTANCE – X
0.2
R
SOURCE
1
0
0.01
0.05
0.09
NORMALIZED SOURCE RESISTANCE – R
0.13
0.17
0.21
X
0.25
S
X
P
0.29
0.33
0.37
R
0.41
LOAD
0.45
0.49
0.53
SOURCE
0.57
0.61
0.65
/R
0.69
LOAD
0.73
0.77
Figure 5. Normalized Step-Up Matching Components
3.2
R
SOURCE
3
LOAD
/R
P
2.8
2.6
2.4
X
S
X
P
R
LOAD
The same results could be found using a Smith Chart as shown in Figure 7. In this example, a shunt capacitor and a series inductor are used to match the 200 source to a 50 load. For a fre­quency of 10 MHz, the same capacitor and inductor values previously found using the resonant approach will transform the 200 source to match the 50 load. At frequencies exceeding 100 MHz, the S parameters from Tables II and III should be used to account for the complex impedance relationships.
LOAD
SERIES L
SOURCE
SHUNT C
Figure 7. Smith Chart Representation of Step-Down Network
After determining the matching network for the single-ended equivalent circuit, the matching elements need to be applied in a differential manner. The series reactance needs to be split such that the final network is balanced. In the previous examples, this simply translates to splitting the series inductor into two equal halves as shown in Figure 3.
Gain Adjustment
The effective gain of the AD8350 can be reduced using a num­ber of techniques. Obviously a matched attenuator network will reduce the effective gain, but this requires the addition of a separate component which can be prohibitive in size and cost. The attenuator will also increase the effective noise figure resulting in an SNR degradation. A simple voltage divider can be imple­mented using the combination of the driving impedance of the previous stage and a shunt resistor across the inputs of the AD8350 as shown in Figure 8. This provides a compact solution but suffers from an increased noise spectral density at the input of the AD8350 due to the thermal noise contribution of the shunt resistor. The input impedance can be dynamically altered through the use of feedback resistors as shown in Figure 9. This will result in a similar attenuation of the input signal by virtue of the voltage divider established from the driving source imped­ance and the reduced input impedance of the AD8350. Yet this technique does not significantly degrade the SNR with the unnecessary increase in thermal noise that arises from a truly resistive attenuator network.
2.2
NORMALIZED REACTANCE – X
2
2
2.4
2.8
3.2
NORMALIZED SOURCE RESISTANCE – R
3.644.4
4.8
5.2
5.666.4
6.8
SOURCE
7.2
7.688.4
/R
LOAD
8.8
Figure 6. Normalized Step-Down Matching Components
REV. A
–9–
AD8350
C
AC
C
AC
ENBL (5V)
876
AD8350
+
1234
(5V TO 10V)
+V
S
R
S
R
SHUNT
V
S
R
R
S
SHUNT
5
0.1F
C
AC
R
L
R
L
C
AC
Figure 8. Gain Reduction Using Shunt Resistor
R
FEXT
C
AC
R
S
V
S
R
S
C
AC
876
AD8350
+
1234
ENBL
(5V)
+V
R
S
FEXT
(5V TO 10V)
0.1F
C
AC
5
R
L
R
L
C
AC
Figure 9. Dynamic Gain Reduction
Figure 8 shows a typical implementation of the shunt divider concept. The reduced input impedance that results from the parallel combination of the shunt resistor and the input impedance of the AD8350 adds attenuation to the input signal effectively reducing the gain. For frequencies less than 100 MHz, the input impedance of the AD8350 can be modeled as a real 200 Ω resis- tance (differential). Assuming the frequency is low enough to ignore the shunt reactance of the input, and high enough such that the reactance of moderately sized ac-coupling capacitors can be considered negligible, the insertion loss, IL, due to the shunt divider can be expressed as:
The insertion loss and the resultant power gain for multiple shunt resistor values is summarized in Table I. The source resistance and input impedance need careful attention when using Equation 1. The reactance of the input impedance of the AD8350 and the ac-coupling capacitors need to be considered before assuming they have negligible contribution. Figure 10 shows the effective power gain for multiple values of R
SHUNT
for
the AD8350-15 and AD8350-20.
Table I. Gain Adjustment Using Shunt Resistor,
= 100  and RIN = 100 Single-Ended
R
S
Power Gain–dB
R
IL–dB AD8350-15 AD8350-20
SHUNT
50 6.02 8.98 13.98 100 3.52 11.48 16.48 200 1.94 13.06 18.06 300 1.34 13.66 18.66 400 1.02 13.98 18.98
20
18
GAIN – dB
16
14
12
10
8
6
4
2
0
100 200 300 400 500 600 700 800
0
AD8350-20
AD8350-15
R
SHUNT
Figure 10. Gain for Multiple Values of Shunt Resistance for Circuit in Figure 8
The gain can be adjusted dynamically by employing external feedback resistors as shown in Figure 9. The effective attenua­tion is a result of the lowered input impedance as with the shunt resistor method, yet there is no additional noise contribution at the input of the device. It is necessary to use well-matched resistors to minimize common-mode offset errors. Quality 1% tolerance resistors should be used along with a symmetric board layout to help guarantee balanced performance. The effective gain for mul­tiple values of external feedback resistors is shown in Figure 11.
IL dB Log
()
20
where
RR
IN SHUNT
=
  
10
 
()
RR
×
IN SHUNT
RR
+
IN SHUNT
R
IN
RR
()
+
IN S
RR
IN SHUNT
RR R
IN SHUNT S
and sin e e
    
+
R gl nded
=−
100
IN
(3)
–10–
REV. A
AD8350
20
GAIN – dB
18
16
14
12
10
8
6
4
2
0
0
AD8350-20
AD8350-15
500 1000 1500 2000
R
FEXT
Figure 11. Power Gain vs. External Feedback Resistors for the AD8350-15 and AD8350-20 with R
= 100
R
L
= 100 Ω and
S
The power gain of any two-port network is dependent on the source and load impedance. The effective gain will change if the differential source and load impedance is not 200 . The single­ended input and output resistance of the AD8350 can be modeled using the following equations:
RR
+
R
=
IN
RR
 
FL
+
FL
R
INT
++ ×1
 
gR
mL
(4)
and
R
F
R
=
OUT
1
g
m
1
+
11
+
RR
S INT
 
1
11
+
RR
S INT
 
  
+
RR
FS
1
gR
mS
for R k
1
S
(5)
Driving Lighter Loads
It is not necessary to load the output of the AD8350 with a 200 differential load. Often it is desirable to try to achieve a complex conjugate match between the source and load in order to minimize reflections and conserve power. But if the AD8350 is driving a voltage responding device, such as an ADC, it is no longer necessary to maximize power transfer. The harmonic distortion performance will actually improve when driving loads greater than 200 Ω. The lighter load requires less cur- rent driving capability on the output stages of the AD8350 resulting in improved linearity. Figure 12 shows the improve­ment in second and third harmonic distortion for increasing differential load resistance.
66
68
70
72
74
76
DISTORTION dBc
78
80
82
200
300 400 500 600 700 800 900 1000
R
LOAD
HD3
HD2
Figure 12. Second and Third Harmonic Distortion vs. Differential Load Resistance for the AD8350-15 with
= 5 V, f = 70 MHz, and V
V
S
= 1 V p-p
OUT
where
=R
R
F
R
= R Feedback External
FEXT
R
= 662 for the AD8350-15
FINT
FEXT
//R
FINT
= 1100 for the AD8350-20 = 25000
R
INT
g
= 0.066 mhos for the AD8350-15
m
= 0.110 mhos for the AD8350-20 = R Source (Single-Ended)
R
S
R
= R Load (Single-Ended)
L
= R Input (Single-Ended)
R
IN
R
= R Output (Single-Ended)
OUT
The resultant single-ended gain can be calculated using the following equation:
RgR
××−
()
G
=
V
LmF
RRRRRg
+++××
LSF LSm
1
REV. A
(6)
–11–
AD8350
EVALUATION BOARD
Figure 13 shows the schematic of the AD8350 evaluation board, for SOIC, as it is shipped from the factory. The board is config­ured to allow easy evaluation using single-ended 50 test equipment. The input and output transformers have a 4-to-1 impedance ratio and transform the AD8350s 200 input and output impedances to 50 . In this mode, 0 resistors (R1 and R4) are required.
To allow compensation for the insertion loss of the transform­ers, a calibration path is provided at Test In and Test Out. This consists of two transformers connected back to back.
C1
0.001F
7
8
IN–
IN+
R1
T1: TC4-1W
0
(MINI CIRCUITS)
61
0
R2
(OPEN)
C2
0.001F
+V
L1
A
3
S
2
B
AD8350
1
SW1 1
6
+
3
2
+V
To drive and load the board differentially, transformers T1 and T2 should be removed and replaced with four 0 resistors (0805 size); Resistors R1 and R4 (0 ) should also be removed. This yields a circuit with a broadband input and output impedance of 200 . To match to impedances other than this, matching components (0805 size) can be placed on pads C1, C2, C3, C4, L1, and L2.
C3
0.001F
5
T2: TC4-1W
(MINI CIRCUITS)
R3
L2 (OPEN)
4
C4
0.001F
C5
0.1F
S
0
1
6
R4 0
OUT–
OUT+
TEST IN
T3: TC4-1W
(MINI CIRCUITS)
61
T4: TC4-1W
(MINI CIRCUITS)
16
Figure 13. Evaluation Board
TEST OUT
–12–
REV. A
AD8350
Table II. Typical Scattering Parameters for the AD8350-15: VCC = 5 V, Differential Input and Output, Z
(diff) = 200
Z
LOAD
SOURCE
(diff) = 200 ,
Frequency – MHz S11 S12 S21 S22
25 0.015∠–48.8° 0.119176.3° 5.60∠–4.3° 0.034∠–4.8° 50 0.028∠–65.7° 0.119171.1° 5.61∠–8.9° 0.032∠–14.3° 75 0.043∠–75.3° 0.119166.9° 5.61∠–13.5° 0.036∠–30.2° 100 0.057∠–87.5° 0.120163.5° 5.61∠–17.9° 0.043∠–39.6° 125 0.073∠–91.8° 0.119159.8° 5.65∠–22.6° 0.053∠–40.6° 150 0.080∠–95.6° 0.120154.8° 5.68∠–27.0° 0.058∠–37° 175 0.100∠–97.4° 0.117151.2° 5.73∠–31.8° 0.072∠–45.1° 200 0.111∠–99.1° 0.121147.3° 5.78∠–36.3° 0.077∠–47.7° 225 0.128∠–103.2° 0.120143.7° 5.83∠–41.0° 0.091∠–52.5° 250 0.141∠–106.7° 0.120140.3° 5.90∠–45.6° 0.104∠–55.1° 275 0.151∠–109.7° 0.120136.6° 6.02∠–50.2° 0.108∠–54.2° 300 0.161∠–111.9° 0.123132.9° 6.14∠–55.1° 0.122∠–51.5° 325 0.179∠–114.7° 0.121130.7° 6.19∠–60.2° 0.135∠–55.6° 350 0.187∠–117.4° 0.122126.6° 6.27∠–65.0° 0.150∠–56.9° 375 0.194∠–121° 0.123123.6° 6.43∠–70.1° 0.162∠–60.9° 400 0.199∠–121.2° 0.124120.1° 6.61∠–75.8° 0.187∠–60.3° 425 0.215∠–122.6° 0.126117.2° 6.77∠–81.7° 0.215∠–63.3° 450 0.225∠–127.0° 0.126113.9° 6.91∠–87.6° 0.242∠–63.9° 475 0.225∠–127.7° 0.126112° 7.06∠–93.8° 0.268∠–65.2° 500 0.244∠–129.9° 0.128108.1° 7.27∠–99.8° 0.304∠–68.2°
Table III. Typical Scattering Parameters for the AD8350-20: VCC = 5 V, Differential Input and Output, Z Z
(diff) = 200
LOAD
SOURCE
(diff) = 200 ,
Frequency – MHz S11 S12 S21 S22
25 0.017∠–142.9° 0.074174.9° 9.96∠–4.27° 0.023–16.6° 50 0.033∠–114.9° 0.074171.0° 9.98∠–8.9° 0.022∠–2.7° 75 0.055∠–110.6° 0.075167.0° 9.98∠–13.3° 0.023∠–23.5° 100 0.073∠–109.4° 0.075163.1° 10.00∠–17.7° 0.029∠–22.7° 125 0.089∠–112.1° 0.075159.2° 10.12∠–22.1° 0.037∠–18.0° 150 0.098∠–116.5° 0.076153.8° 10.20∠–26.4° 0.045∠–3.2° 175 0.124∠–118.1° 0.075150.2° 10.34∠–30.9° 0.055∠–15.7° 200 0.141∠–119.4° 0.076147.2° 10.50∠–35.6° 0.065∠–15.6° 225 0.159∠–122.6° 0.077142.2° 10.65∠–40.1° 0.080∠–17.7° 250 0.170∠–128.5° 0.078139.5° 10.80∠–44.7° 0.085∠–22.4° 275 0.186∠–131.6° 0.078135.8° 11.14∠–49.3° 0.096∠–23.5° 300 0.203∠–132.9° 0.080132.5° 11.45∠–54.7° 0.116∠–25.9° 325 0.215∠–135.0° 0.080129.3° 11.70∠–60.3° 0.139∠–29.6° 350 0.222∠–136.9° 0.082125.9° 11.93∠–65.0° 0.161∠–32.2° 375 0.242∠–142.4° 0.082123.6° 12.39∠–70.3° 0.173∠–38.6° 400 0.240∠–145.2° 0.084120.3° 12.99∠–76.8° 0.207∠–37.6° 425 0.267∠–146.7° 0.084117.3° 13.34∠–84.0° 0.241∠–48.1° 450 0.266∠–150.7° 0.086115.1° 13.76∠–90.1° 0.265∠–49.7° 475 0.267∠–153.7° 0.087112.8° 14.34∠–97.5° 0.317∠–53.5° 500 0.285∠–161.1° 0.088110.9° 14.89∠–105.0° 0.359∠–59.2°
REV. A
–13–
AD8350
0.1574 (4.00)
0.1497 (3.80)
OUTLINE DIMENSIONS
Dimensions shown in inches and (mm).
8-Lead Plastic SOIC
(SO-8)
0.1968 (5.00)
0.1890 (4.80)
85
0.2440 (6.20)
0.2284 (5.80)
41
PIN 1
0.0098 (0.25)
0.0040 (0.10)
SEATING
0.122 (3.10)
0.114 (2.90)
0.006 (0.15)
0.002 (0.05)
SEATING
0.0500 (1.27)
PLANE
BSC
0.0192 (0.49)
0.0138 (0.35)
0.0688 (1.75)
0.0532 (1.35)
0.0098 (0.25)
0.0075 (0.19)
8-Lead microSOIC Package
(RM-8)
0.122 (3.10)
0.114 (2.90)
85
PIN 1
0.0256 (0.65) BSC
0.120 (3.05)
0.112 (2.84)
0.018 (0.46)
0.008 (0.20)
PLANE
0.199 (5.05)
0.187 (4.75)
41
0.043 (1.09)
0.037 (0.94)
0.011 (0.28)
0.003 (0.08)
0.0196 (0.50)
0.0099 (0.25)
8
0.0500 (1.27)
0
0.0160 (0.41)
0.120 (3.05)
0.112 (2.84)
33 27
45
0.028 (0.71)
0.016 (0.41)
–14–
REV. A
–15–
C01014–1.5–6/01(A)
–16–
PRINTED IN U.S.A.
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