Analog Devices AD8350 Datasheet

Low Distortion

1

2

3

4

8

7

6

5

AD8350

IN+ IN–

ENBL

OUT+

OUT–

V

CC

GND

+

–

GND

a

FEATURES
High Dynamic Range

Output IP3: +22 dBm: Re 50 ⍀ @ 250 MHz
Low Noise Figure: 5.9 dB @ 250 MHz
Two Gain Versions:

AD8350-15 15 dB

AD8350-20 20 dB
–3 dB Bandwidth: 1.0 GHz
Single Supply Operation: +5 V to +10 V
Supply Current: 28 mA
Input/Output Impedance: 200 ⍀
Single-Ended or Differential Input Drive
8-Lead SOIC Package

APPLICATIONS
Cellular Base Stations
Communications Receivers

RF/IF Gain Block

Differential A-to-D Driver

SAW Filter Interface
Single-Ended to Differential Conversion
High Performance Video
High Speed Data Transmission

1.0 GHz Differential Amplifier
AD8350

FUNCTIONAL BLOCK DIAGRAMS

8-Lead SOIC Package (with Enable)

PRODUCT DESCRIPTION

The AD8350 series are high performance fully-differential
amplifiers useful in RF and IF circuits up to 1000 MHz. The
amplifier has excellent noise figure of 5.9 dB at 250 MHz. It
offers a high output third order intercept (OIP3) of +22dBm
at 250 MHz. Gain versions of 15 dB and 20 dB are offered.

The AD8350 is designed to meet the demanding performance
requirements of communications transceiver applications. It
enables a high dynamic range differential signal chain, with
exceptional linearity and increased common-mode rejection.
The device can be used as a general purpose gain block, an
A-to-D driver, and high speed data interface driver, among
other functions. The AD8350 input can also be used as a single­ended-to-differential converter.

The amplifier can be operated down to +5 V with an OIP3 of
+22 dBm at 250 MHz and slightly reduced distortion perfor­mance. The wide bandwidth, high dynamic range and tempera­ture stability make this product ideal for the various RF and IF
frequencies required in cellular, CATV, broadband, instrumen­tation and other applications.

The AD8350 is offered in an 8-lead single SOIC package. It
operates from +5 V and +10 V power supplies, drawing 28 mA
typical. The AD8350 offers a power enable function for power­sensitive applications. The AD8350 is fabricated using Analog
Devices’ proprietary high speed complementary bipolar process.
The device is available in the industrial (–40°C to +85°C)
temperature range.

REV. 0

Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: [phone] World Wide Web Site: http://www.analog.com
Fax: [phone] © Analog Devices, Inc., 1999

(@ +25ⴗC, VS = +5 V, G = 15 dB, unless otherwise noted. All specifications refer

AD8350-15–SPECIFICA TIONS

to differential inputs and differential outputs unless noted.)

Parameter Conditions Min Typ Max Units

DYNAMIC PERFORMANCE

–3 dB Bandwidth VS = +5 V, V

= +10 V, V

V

Bandwidth for 0.1 dB Flatness V
Slew Rate V

Settling Time 0.1%, V
Gain (S21)

1

Gain Supply Sensitivity V
Gain Temperature Sensitivity T
Isolation (S12)

1

S

= +5 V, V

S

V

= +10 V, V

S

= 1 V p-p 2000 V/µs

OUT

OUT

VS = +5 V, f = 50 MHz 14 15 16 dB

= +5 V to +10 V, f = 50 MHz 0.003 dB/V

S

to T

MIN

f = 50 MHz –18 dB

= 1 V p-p 0.9 GHz

OUT

= 1 V p-p 1.1 GHz

OUT

= 1 V p-p 270 MHz

OUT

= 1 V p-p 270 MHz

OUT

= 1 V p-p 10 ns

MAX

–0.002 dB/°C

NOISE/HARMONIC PERFORMANCE

50 MHz Signal

Second Harmonic V
Third Harmonic V
Output Second Order Intercept
Output Third Order Intercept

2

2

= +5 V, V

S

V

= +10 V, V

S

= +5 V, V

S

= +10 V, V

V

S

VS = +5 V 52 dBm
V

= +10 V 52 dBm

S

VS = +5 V 22 dBm
V

= +10 V 23 dBm

S

= 1 V p-p –66 dBc

OUT

= 1 V p-p –67 dBc

OUT

= 1 V p-p –65 dBc

OUT

= 1 V p-p –70 dBc

OUT

250 MHz Signal

Second Harmonic V
Third Harmonic V
Output Second Order Intercept
Output Third Order Intercept

1 dB Compression Point (RTI)

2

2

2

= +5 V, V

S

V

= +10 V, V

S

= +5 V, V

S

= +10 V, V

V

S

VS = +5 V 33 dBm
V

= +10 V 34 dBm

S

VS = +5 V 18 dBm
V

= +10 V 22 dBm

S

VS = +5 V 2 dBm

= +10 V 5 dBm

V

S

= 1 V p-p –48 dBc

OUT

= 1 V p-p –49 dBc

OUT

= 1 V p-p –52 dBc

OUT

= 1 V p-p –61 dBc

OUT

Voltage Noise (RTI) f = 150 MHz 1.7 nV/√Hz
Noise Figure f = 150 MHz 6.8 dB

INPUT/OUTPUT CHARACTERISTICS

Differential Offset Voltage (RTI) V
Differential Offset Drift T

OUT+
MIN

– V

to T

OUT–

MAX

±1mV

0.02 mV/°C
Input Bias Current 15 µA
Input Resistance Real 200 Ω
Input Capacitance 2pF
CMRR f = 50 MHz –67 dB
Output Resistance Real 200 Ω
Output Capacitance 2pF

POWER SUPPLY

Operating Range +4 +11.0 V
Quiescent Current Powered Up, V

Powered Down, V
Powered Up, V
Powered Down, V

= +5 V 25 28 32 mA

S

= +5 V 3 3.8 5.5 mA

S

= +10 V 27 30 34 mA

S

= +10 V 3 4 6.5 mA

S

Power-Up/Down Switching 15 ns
Power Supply Rejection Ratio f = 50 MHz, VS ∆ = 1 V p-p –58 dB

OPERATING TEMPERATURE RANGE –40 +85 °C

NOTES

1

See Tables I–IV for complete list of S-Parameters.

2

Re: 50 Ω.

Specifications subject to change without notice.

–2–

REV. 0

(@ +25ⴗC, VS = +5 V, G = 20 dB, unless otherwise noted. All
specifications refer to differential inputs and differential outputs

AD8350-20–SPECIFICATIONS

unless noted.)

AD8350

Parameter Conditions Min Typ Max Units

DYNAMIC PERFORMANCE

–3 dB Bandwidth VS = +5 V, V

V

= +10 V, V

Bandwidth for 0.1 dB Flatness V
Slew Rate V

Settling Time 0.1%, V
Gain (S21)

1

Gain Supply Sensitivity V
Gain Temperature Sensitivity T
Isolation (S12)

1

S

= +5 V, V

S

= +10 V, V

V

S

= 1 V p-p 2000 V/µs

OUT

OUT

VS = +5 V, f = 50 MHz 19 20 21 dB

= +5 V to +10 V, f = 50 MHz 0.003 dB/V

S

to T

MIN

f = 50 MHz –22 dB

= 1 V p-p 0.7 GHz

OUT

= 1 V p-p 0.9 GHz

OUT

= 1 V p-p 230 MHz

OUT

= 1 V p-p 200 MHz

OUT

= 1 V p-p 15 ns

MAX

–0.002 dB/°C

NOISE / HARMONIC PERFORMANCE

50 MHz Signal

Second Harmonic V
Third Harmonic V
Output Second Order Intercept
Output Third Order Intercept

2

2

= +5 V, V

S

V

= +10 V, V

S

= +5 V, V

S

V

= +10 V, V

S

= 1 V p-p –65 dBc

OUT

= 1 V p-p –66 dBc

OUT

= 1 V p-p –66 dBc

OUT

= 1 V p-p –70 dBc

OUT

VS = +5 V 50 dBm

= +10 V 50 dBm

V

S

VS = +5 V 22 dBm
V

= +10 V 23 dBm

S

250 MHz Signal

Second Harmonic V
Third Harmonic V
Output Second Order Intercept
Output Third Order Intercept

1 dB Compression Point (RTI)

2

2

2

= +5 V, V

S

V

= +10 V, V

S

= +5 V, V

S

V

= +10 V, V

S

VS = +5 V 31 dBm

= +10 V 32 dBm

V

S

VS = +5 V 18 dBm
V

= +10 V 22 dBm

S

VS = +5 V –2.6 dBm
V

= +10 V 1.8 dBm

S

= 1 V p-p –45 dBc

OUT

= 1 V p-p –46 dBc

OUT

= 1 V p-p –55 dBc

OUT

= 1 V p-p –60 dBc

OUT

Voltage Noise (RTI) f = 150 MHz 1.7 nV/√Hz
Noise Figure f = 150 MHz 5.6 dB

INPUT/OUTPUT CHARACTERISTICS

Differential Offset Voltage (RTI) V
Differential Offset Drift T

OUT+
MIN

– V

to T

OUT–
MAX

±1mV

0.02 mV/°C
Input Bias Current 15 µA
Input Resistance Real 200 Ω
Input Capacitance 2pF
CMRR f = 50 MHz –52 dB
Output Resistance Real 200 Ω
Output Capacitance 2pF

POWER SUPPLY

Operating Range +4 +11.0 V
Quiescent Current Powered Up, V

Powered Down, V
Powered Up, V
Powered Down, V

= +5 V 25 28 32 mA

S

= +5 V 3 3.8 5.5 mA

S

= +10 V 27 30 34 mA

S

= +10 V 3 4 6.5 mA

S

Power-Up/Down Switching 15 ns
Power Supply Rejection Ratio f = 50 MHz, VS ∆ = 1 V p-p –45 dB

OPERATING TEMPERATURE RANGE –40 +85 °C

NOTES

1

See Tables I–IV for complete list of S-Parameters.

2

Re: 50 Ω.

Specifications subject to change without notice.

REV. 0 –3–

AD8350

WARNING!

ESD SENSITIVE DEVICE

ABSOLUTE MAXIMUM RATINGS*

Supply Voltage, VS . . . . . . . . . . . . . . . . . . . . . . . . . . . . +11 V

Input Power Differential . . . . . . . . . . . . . . . . . . . . . . . +8 dBm

Internal Power Dissipation . . . . . . . . . . . . . . . . . . . . .400 mW

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100°C/W

θ

JA

Maximum Junction Temperature . . . . . . . . . . . . . . . . +125°C

Operating Temperature Range . . . . . . . . . . . .–40°C to +85°C

Storage Temperature Range . . . . . . . . . . . . .–65°C to +150°C

Lead Temperature Range (Soldering 60 sec) . . . . . . . . +300°C

*Stresses above those listed under Absolute Maximum Ratings may cause perma-

nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may effect device reliability.

PIN CONFIGURATION

IN+

ENBL

V

OUT+

CC

1

2

AD8350

TOP VIEW

3

(Not to Scale)

4

8

7

6

5

IN–
GND
GND
OUT–

ORDERING GUIDE

Model Temperature Range Package Description Package Option

AD8350AR15 –40°C to +85°C 8-Lead SOIC SO-8
AD8350AR15-REEL1–40°C to +85°C 8-Lead SOIC SO-8
AD8350AR15-REEL7

2

–40°C to +85°C 8-Lead SOIC SO-8
AD8350AR15-EVAL Evaluation Board (15 dB)
AD8350AR20 –40°C to +85°C 8-Lead SOIC SO-8
AD8350AR20-REEL
AD8350AR20-REEL7

1

–40°C to +85°C 8-Lead SOIC SO-8

2

–40°C to +85°C 8-Lead SOIC SO-8
AD8350AR20-EVAL Evaluation Board (20 dB)

NOTES

1

13" Reels of 2500 each.

2

7" Reels of 750 each.

PIN FUNCTION DESCRIPTIONS

Pin Function Description

1, 8 IN+, IN– Differential Inputs. IN+ and IN–

should be ac-coupled (pins have a dc
bias of midsupply). Differential input
impedance is 200 Ω.

2 ENBL Power-up Pin. A high level (5 V) en-

ables the device; a low level (0 V) puts
device in sleep mode.

3V

CC

Positive Supply Voltage. +5 V to +10V.

4, 5 OUT+, OUT– Differential Outputs. OUT+ and

OUT– should be ac-coupled (pins have
a dc bias of midsupply). Differential
input impedance is 200 Ω.

6, 7 GND Common External Ground Reference.

CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AD8350 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.

–4–

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