Broadband RF port: LF to 500 MHz
Conversion gain: 3.7 dB
Noise figure: 12.2 dB
Input IP3: 22.7 dBm
Input P
LO drive: 0 dBm
Differential high impedance RF input port
Single-ended, 50 Ω LO input port
Single-supply operation: 5 V @ 98 mA
Power-down mode
Exposed paddle LFCSP: 3 mm × 3 mm
APPLICATIONS
Cellular base station receivers
ISM receivers
Radio links
RF instrumentation
: 8.3 dBm
1dB
LF to 500 MHz
AD8342
FUNCTIONAL BLOCK DIAGRAM
VPDC PWDN EXRB COMM
9
1
0
1
1
1
2
COMM
13
RFCM
14
RFIN
15
VPMX
16
VPLO LOCM LOIN COMM
AD8342
1
BIAS
2
Figure 1.
3
COMM
8
IFOP
7
6
IFOM
5
COMM
4
05352-001
GENERAL DESCRIPTION
The AD8342 is a high performance, broadband active mixer.
It is well suited for demanding receive-channel applications
that require wide bandwidth on all ports and very low intermodulation distortion and noise figure.
The AD8342 provides a typical conversion gain of 3.7 dB with
an RF frequency of 238 MHz. The integrated LO driver presents
a 50 Ω input impedance with a low LO drive level, helping to
minimize the external component count.
The differential high impedance broadband RF port allows for
easy interfacing to both active devices and passive filters. The
RF input accepts input signals as large as 1.6 V p-p or 8 dBm
(relative to 50 Ω) at P
1dB
.
The open-collector differential outputs provide excellent balance and can be used with a differential filter or IF amplifier,
such as the AD8369 or AD8351. These outputs can also be converted to a single-ended signal through the use of a matching
network or a transformer (balun). When centered on the VPOS
supply voltage, the outputs may swing ±2 V differentially.
The AD8342 is fabricated on an Analog Devices proprietary,
high performance SiGe IC process. The AD8342 is available in a
16-lead LFCSP. It operates over a −40°C to +85°C temperature
range. An evaluation board is also available.
Rev. 0
Information furnished by Analog Devices is believed to be accurate and reliable.
However, no responsibility is assumed by Analog Devices for its use, nor for any
infringements of patents or other rights of third parties that may result from its use.
Specifications subject to change without notice. No license is granted by implication
or otherwise under any patent or patent rights of Anal og Devices. Trademarks and
registered trademarks are the property of their respective owners.
VS = 5 V, TA = 25°C, fRF = 238 MHz, fLO = 286 MHz, LO power = 0 dBm, ZO = 50 Ω, R
nated into 100 Ω through a 2:1 ratio balun, unless otherwise noted.
Table 1.
Parameter Conditions Min Typ Max Unit
RF INPUT INTERFACE
Return Loss Hi-Z input terminated with 100 Ω off-chip resistor 10 dB
Input Impedance
DC Bias Level Internally generated; port must be ac-coupled 2.4 V
OUTPUT INTERFACE
Output Impedance Differential impedance, frequency = 48 MHz 10||0.5 kΩ||pF
DC Bias Voltage Supplied externally 4.75 VS 5.25 V
Power Range Via a 2:1 impedance ratio transformer 13 dBm
LO INTERFACE
Return Loss 10 dB
DC Bias Voltage Internally generated; port must be ac-coupled VS − 1.6 V
POWER-DOWN INTERFACE
PWDN Threshold 3.5 V
PWDN Response Time Device enabled, IF output to 90% of its final level 0.4 µs
Device disabled, supply current <5 mA 4 µs
PWDN Input Bias Current Device enabled −80 µA
Device disabled +100 µA
POWER SUPPLY
Positive Supply Voltage 4.75 5 5.25 V
Quiescent Current
VPDC Supply current for bias cells 5 mA
VPMX, IFOP, IFOM Supply current for mixer, R
VPLO Supply current for LO limiting amplifier 35 mA
Total Quiescent Current VS = 5 V 85 98 113 mA
Power-Down Current Device disabled 500 µA
Frequency = 238 MHz (measured at RFIN with RFCM acgrounded)
= 1.82 kΩ 58 mA
BIAS
= 1.82 kΩ, RF termination = 100 Ω, IF termi-
BIAS
1||0.4 kΩ||pF
Rev. 0 | Page 3 of 20
AD8342
AC PERFORMANCE
VS = 5 V, TA = 25°C, LO power = 0 dBm, ZO = 50 Ω, R
unless otherwise noted.
Table 2.
Parameter Conditions Min Typ Max Unit
RF FREQUENCY RANGE
LO FREQUENCY RANGE
IF FREQUENCY RANGE
1
1
1
50 500 MHz
High side LO 60 850 MHz
10 350 MHz
CONVERSION GAIN fRF = 460 MHz, fLO = 550 MHz, fIF = 90 MHz 3.2 dB
f
INPUT 1 dB COMPRESSION POINT fRF = 460 MHz, fLO = 550 MHz, fIF = 90 MHz 8.5 dBm
f
= 238 MHz, fLO = 286 MHz, fIF = 48 MHz 8.3 dBm
RF
LO TO IF OUTPUT LEAKAGE LO power = 0 dBm, fLO = 286 MHz −27 dBc
LO TO RF INPUT LEAKAGE LO power = 0 dBm, fLO = 286 MHz −55 dBc
2× LO TO IF OUTPUT LEAKAGE
LO power = 0 dBm, f
IF terminated into 100 Ω and measured with a differential probe
RF TO IF OUTPUT LEAKAGE RF power = −10 dBm, fRF = 238 MHz, fLO = 286 MHz −32 dBc
IF/2 SPURIOUS RF power = −10 dBm, fRF = 238 MHz, fLO = 286 MHz −70 dBc
1
Frequency ranges are those that were extensively characterized; this device can operate over a wider range. See the H section for details. igh IF Applications
= 1.82 kΩ, RF termination 100 Ω, IF terminated into 100 Ω via a 2:1 ratio balun,
BIAS
= 461 MHz, fLO = 550 MHz,
RF2
= 89 MHz each RF tone −10 dBm
IF2
= 239 MHz, fLO = 286MHz,
RF2
= 47MHz each RF tone −10 dBm
IF2
= 410 MHz, fLO = 550 MHz, f
RF2
= 188 MHz, fLO = 286 MHz, f
RF2
= 238 MHz, fLO = 286 MHz
RF
= 90 MHz,
IF1
= 48MHz,
IF1
22.2 dBm
22.7 dBm
50 dBm
44 dBm
−47
dBm
Rev. 0 | Page 4 of 20
AD8342
SPUR TABLE
VS = 5 V, TA = 25°C, RF and LO power = 0 dBm, fRF = 238MHz, fLO = 286MHz, ZO = 50 Ω, R
IF terminated into 100 Ω via a 2:1 ratio balun.
Note: Measured using standard test board. Typical noise floor of measurement system = −100 dBm.
Supply Voltage, VS 5.5 V
RF Input Level 12 dBm
LO Input Level 12 dBm
PWDN Pin VS + 0.5 V
IFOP, IFOM Bias Voltage 5.5 V
Minimum Resistor from EXRB to COMM 1.8 kΩ
Internal Power Dissipation 650 mW
θJA 77°C/W
Maximum Junction Temperature 135°C
Operating Temperature Range −40°C to +85°C
Storage Temperature Range −65°C to +150°C
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the
human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
Rev. 0 | Page 6 of 20
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