Complete RF detector/controller function
>50 dB range at 0.9 GHz (−48 dBm to +3 dBm re 50 Ω)
Accurate scaling from 0.1 GHz to 2.5 GHz
Temperature-stable linear-in-dB response
Log slope of 23 mV/dB, intercept at −60 dBm at 0.9 GHz
True integration function in control loop
Low power: 20 mW at 2.7 V
APPLICATIONS
Single, dual, and triple band mobile handset (GSM, DCS,
EDGE)
Transmitter power control
GENERAL DESCRIPTION
The AD8311 is a complete low cost subsystem for the precise
control of RF power amplifiers operating in the frequency range
0.1 GHz to 2.5 GHz and over a typical dynamic range of 50 dB.
It is intended for use in cellular handsets and other batteryoperated wireless devices. The log amp technique provides a
much wider measurement range and better accuracy than
controllers using diode detectors. In particular, its temperature
stability is excellent over a specified range of −40°C to +85°C.
50 dB GSM PA Controller
AD8311
Its high sensitivity allows control at low signal levels, thus
reducing the amount of power that needs to be coupled to the
detector. For convenience, the signal is internally ac-coupled.
This high-pass coupling, with a corner at approximately
0.016 GHz, determines the lowest operating frequency. Thus,
the source can be dc-grounded.
The AD8311 provides a voltage output, VAPC, which has the
voltage range and current drive to directly connect to the gain
control pin of most handset power amplifiers. VAPC can swing
from 300 mV above ground to within 200 mV below the supply
voltage. Load currents of up to 6 mA can be supported.
The setpoint control input is applied to pin VSET and has an
operating range of 0.25 V to 1.4 V. The associated circuit
determines the slope and intercept of the linear-in-dB
measurement system; these are nominally 23.6 mV/dB and
−59.7 dBm at 0.9 GHz. Further simplifying the application of
the AD8311, the input resistance of the setpoint interface is over
35 MΩ, and the bias current is typically 0.26 µA.
The AD8311 is available in a 6-ball wafer-level chip scale
package (WLCSP), 1.0 mm × 1.5 mm, and consumes 7.6 mA
from a 2.7 V to 5.5 V supply.
FUNCTIONAL BLOCK DIAGRAM
VPOS
RFIN
10dB
OFFSET
COMPENSATION
COMM
Rev. 0
Information furnished by Analog Devices is believed to be accurate and reliable.
However, no responsibility is assumed by Analog Devices for its use, nor for any
infringements of patents or other rights of third parties that may result from its use.
Specifications subject to change without notice. No license is granted by implication
or otherwise under any patent or patent rights of Analog Devices. Trademarks and
registered trademarks are the property of their respective owners.
VPOS = 2.7 V, Frequency = 0.1 GHz, TA = 25°C, 52.3 Ω termination on RFIN, light condition = 600 lux, unless otherwise noted.
Table 1.
Parameter Conditions Min Typ Max Unit
SPECIFIED FREQUENCY RANGE RFIN (Pin 6) 0.1 2.5 GHz
MEASUREMENT MODE1 (f = 0.1 GHz)
Input Impedance No termination resistor on RFIN 2140 || 1.97 Ω || pF
±1 dB Dynamic Range TA = +25°C
Maximum Input Level
Minimum Input Level
2
Slope
−40°C < T
±1 dB error
±1 dB error
21.5 23.8 25.5 mV/dB
< +85°C
A
Intercept2 −66 −58.9 −51 dBm
VSET Voltage—High Power In PIN = –10 dBm 1.16 V
VSET Voltage—Low Power In PIN = –40 dBm 0.45 V
Temperature Sensitivity PIN = –10 dBm
25°C ≤ T
−40°C ≤ T
≤ +85°C
A
≤ +25°C
A
MEASUREMENT MODE (f = 0.9 GHz)
Input Impedance No termination resistor on RFIN 370 || 1.58 Ω || pF
±1 dB Dynamic Range TA = +25°C
Maximum Input Level
Minimum Input Level
−40°C < T
±1 dB error
±1 dB error
< +85°C
A
Slope2 23.6 mV/dB
Intercept2 −59.7 dBm
VSET Voltage—High Power In PIN = –10 dBm 1.17 V
VSET Voltage—Low Power In PIN = –40 dBm 0.46 V
Temperature Sensitivity PIN = –10 dBm
25°C ≤ T
−40°C ≤ T
≤ +85°C
A
≤ +25°C
A
MEASUREMENT MODE (f = 1.9 GHz)
Input Impedance No termination resistor on RFIN 180 || 1.67 Ω || pF
±1 dB Dynamic Range TA = +25°C
Maximum Input Level
Minimum Input Level
−40°C < T
±1 dB error
±1 dB error
< +85°C
A
Slope2 22.7 mV/dB
Intercept2 −60.8 dBm
VSET Voltage—High Power In PIN = –10 dBm 1.15 V
VSET Voltage—Low Power In PIN = –40 dBm 0.47 V
Temperature Sensitivity PIN = –10 dBm
25°C ≤ T
−40°C ≤ T
≤ +85°C
A
≤ +25°C
A
47 dB
46 dB
+2 +2.6 dBm
−44.5 −44 dBm
−0.0020
+0.0121
dB/°C
dB/°C
51 dB
50 dB
+2.8 dBm
−47.9 dBm
0.0015
0.0094
dB/°C
dB/°C
42 dB
41 dB
−5.6 dBm
−48.0 dBm
0.0056
0.0077
dB/°C
dB/°C
Rev. 0 | Page 3 of 24
AD8311
Parameter Conditions Min Typ Max Unit
MEASUREMENT MODE (f = 2.5 GHz)
Input Impedance No termination resistor on RFIN 164 || 1.55 Ω || pF
±1 dB Dynamic Range TA = +25°C
Maximum Input Level
Minimum Input Level
−40°C < T
±1 dB error
±1 dB error
< +85°C
A
Slope2 22.5 mV/dB
Intercept2 −60.6 dBm
VSET Voltage—High Power In PIN = –10 dBm 1.14 V
VSET Voltage—Low Power In PIN = –40 dBm 0.46 V
Temperature Sensitivity PIN = –10 dBm
25°C ≤ T
−40°C ≤ T
≤ 85°C
A
≤ +25°C
A
OUTPUT INTERFACE VAPC (Pin 2)
Minimum Output Voltage V
Maximum Output Voltage I
R
vs. Temperature 85°C, V
≤ 150mV 0.2 0.3 0.4 V
SET
= 3 mA 2.3 2.55 V
OUT
= ∞ 2.4 2.65 V
L
POS
= 3 V, I
= 6 mA 2.54 V
OUT
General Limit 2.7 V ≤ VPOS ≤ 5.5 V, RL = ∞ VPOS – 0.1 V
Output Current Drive V
Output Noise RF Input = 2 GHz, 0 dBm, f
= 1.5 V, RFIN = –50 dBm, source/sink 5/200 mA/µA
SET
= 100 kHz, C
NOISE
= 220 pF 170 nV/√Hz
FLT
Small Signal Bandwidth RFIN = −10 dBm; from FLTR to VAPC 30 MHz
Fall Time Input level = off to 0 dBm, 90% to 10% 120 ns
Rise Time Input level = 0 dBm to off, 10% to 90% 270 ns
Slew Rate 90% – 10%, V
= 0.3 V, open loop 15 V/µs
SET
Response Time FLTR = Open 130 ns
VSET INTERFACE VSET (Pin 3)
Nominal Input Range RFIN = 0 dBm; measurement mode
RFIN = −50 dBm; measurement mode
Logarithmic Scale Factor 0.04 dB/mV
Bias Current Source RFIN = −10 dBm; V
= 1.4 V 0.26
SET
Input Resistance 36 MΩ
Slew Rate 14 V/µs
POWER INTERFACE VPOS (Pin 1)
Supply Voltage 2.7 5.5 V
Quiescent Current 5 7.6 10.7 mA
vs. Temperature
Power-On Time
Power-Off Time
1
VAPC (Pin 2) to VSET (Pin 3) with inversion stage, sinusoidal input signal.
2
Mean and standard deviation specifications are available in . Table 4
–40°C ≤ T
Time from VPOS high to V
V
SET
Time from VPOS low to V
V
SET
≤ +85°C
A
≤ 200 mV
≤ 200 mV
within 1% of final value,
APC
within 1% of final value,
APC
42 dB
41 dB
−6.2 dBm
−47.7 dBm
−0.0004
+0.0090
dB/°C
dB/°C
1.4 V
0.27 V
µA
8.2 12.9 mA
3 10 µs
100 2000 ns
Rev. 0 | Page 4 of 24
AD8311
ABSOLUTE MAXIMUM RATINGS
Table 2.
Parameters Ratings
Supply Voltage VPOS 5.5 V
VAPC, VSET 0 V, VPOS
RFIN 17 dBm
Equivalent Voltage 1.6 V rms
Internal Power Dissipation 60 mW
θJA (WLCSP) 200°C/W
Maximum Junction Temperature 125°C
Operating Temperature Range −40°C to +85°C
Storage Temperature Range −65°C to +150°C
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the
human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
Rev. 0 | Page 5 of 24
AD8311
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
BUMP 1
INDICATOR
VPOSRFIN
VAPC
VSETFLTR
6
1
5
2
4
3
TOP VIEW
Not to Scale
COMM
05545-002
Figure 2. Pin Configuration
Table 3. Pin Function Descriptions
Pin No. Mnemonic Function
1 VPOS Positive Supply Voltage: 2.7 V to 5.5 V.
2 VAPC Output. Control voltage for gain control element.
3 VSET Setpoint Input. Nominal input range 0.25 V to 1.4 V.
4 FLTR Integrator Capacitor. Connect between FLTR and COMM.
5 COMM Device Common (Ground).
6 RFIN RF Input.