Difference amplifier: gains of 0.5, 1, or 2
Single ended amplifiers: over 40 different gains
Set reference voltage at midsupply
Excellent ac specifications
15 MHz bandwidth
30 V/μs slew rate
High accuracy dc performance
0.08% maximum gain error
10 ppm/°C maximum gain drift
80 dB minimum CMRR (G = 2)
Two channels in small 4 mm × 4 mm LFCSP
Supply current: 2.5 mA per channel
Supply range: ±2.5 V to ±18 V
APPLICATIONS
Instrumentation amplifier building blocks
Level translators
Automatic test equipment
High performance audio
Sine/Cosine encoders
GENERAL DESCRIPTION
The AD8270 is a low distortion, dual-channel amplifier with
internal gain setting resistors. With no external components,
it can be configured as a high performance difference amplifier
with gains of 0.5, 1, or 2. It can also be configured in over 40 singleended configurations, with gains ranging from −2 to +3.
The AD8270 is the first dual-difference amplifier in the small
4 mm × 4 mm
single-difference amplifier. The smaller package allows a 2×
increase in channel density and a lower cost per channel, all
with no compromise in performance.
The AD8270 operates on both single and dual supplies and
equires only 2.5 mA maximum supply current for each ampli-
r
fier. It is specified over the industrial temperature range of
−40°C to +85°C and is fully RoHS compliant.
LFCSP. It requires the same board area as a typical
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Anal og Devices for its use, nor for any infringements of patents or ot her
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
G = 0.5 G = 1 G = 2
Parameter Conditions Min Typ Max Min Typ Max Min Typ Max Unit
DYNAMIC PERFORMANCE
Bandwidth 20 15 10 MHz
Slew Rate 30 30 30 V/μs
Settling Time to 0.01% 10 V step on output 700 800 700 800 700 800 ns
Settling Time to 0.001% 10 V step on output 750 900 750 900 750 900 ns
NOISE/DISTORTION
Harmonic Distortion
Voltage Noise1 f = 0.1 Hz to 10 Hz 2 1.5 1 μV p-p
f = 1 kHz 52 38 26 nV/√Hz
GAIN
Gain Error 0.08 0.08 0.08 %
Gain Drift TA = −40°C to +85°C 1 10 1 10 1 10 ppm/°C
INPUT CHARACTERISTICS
OUTPUT CHARACTERISTICS
Sinking 60 60 60 mA
POWER SUPPLY
T
1
2
3
4
2
Offset
Average Temperature Drift TA = −40°C to +85°C 3 2 1.5 μV/°C
Common-Mode Rejection
Ratio
Power Supply Rejection Ratio 2 10 2 10 2 10 μV/V
Input Voltage Range
Common-Mode Resistance4 7.5 10 7.5 kΩ
Bias Current 500 500 500 nA
Output Swing −13.8 +13.8 −13.8 +13.8 −13.8 +13.8 V
T
Short-Circuit Current Limit Sourcing 100 100 100 mA
Supply Current
(per Amplifier)
Includes amplifier voltage and current noise, as well as noise of internal resistors.
Includes input bias and offset errors.
At voltages beyond the rails, internal ESD diodes begin to turn on. In some configurations, the input voltage range may be limited by the internal op amp (see the
Input Voltage Range section for details).
Internal resistors are trimmed to be ratio matched but have ±20% absolute accuracy. Common-mode resistance was calculated with both inputs in parallel. Common-
mode impedance at only one input is 2× the resistance listed.
= 0 V, TA = 25°C, R
REF
3
= 2 kΩ, specifications referred to input, unless otherwise noted.
LOAD
f = 1 kHz, V
= 600 Ω
R
LOAD
450 1500 300 1000 225 750 μV
DC to 1 kHz 70 86 76 92 80 98 dB
−15.4 +15.4 −15.4 +15.4 −15.4 +15.4 V
= −40°C to +85°C −13.7 +13.7 −13.7 +13.7 −13.7 +13.7 V
A
2.3 2.5 2.3 2.5 2.3 2.5 mA
= −40°C to +85°C 3 3 3 mA
A
= 10 V p-p,
OUT
84 145 95 dB
Rev. 0 | Page 3 of 20
AD8270
www.BDTIC.com/ADI
VS = ±5 V, V
Table 3.
G = 0.5 G = 1 G = 2
Parameter Conditions Min Typ Max Min Typ Max Min Typ Max Unit
DYNAMIC PERFORMANCE
Bandwidth 20 15 10 MHz
Slew Rate 30 30 30 V/μs
Settling Time to 0.01% 5 V step on output 550 650 550 650 550 650 ns
Settling Time to 0.001% 5 V step on output 600 750 600 750 600 750 ns
NOISE/DISTORTION
Harmonic Distortion
Voltage Noise1 f = 0.1 Hz to 10 Hz 2 1.5 1 μV p-p
f = 1 kHz 52 38 26 nV/√Hz
GAIN
Gain Error 0.08 0.08 0.08 %
Gain Drift TA = −40°C to +85°C 1 10 1 10 1 10 ppm/°C
INPUT CHARACTERISTICS
Offset
Average Temperature Drift TA = −40°C to +85°C 3 2 1.5 μV/°C
Common-Mode Rejection Ratio DC to 1 kHz 70 86 76 92 80 98 dB
= 0 V, TA = 25°C, R
REF
2
= 2 kΩ, specifications referred to input, unless otherwise noted.
LOAD
f = 1 kHz, V
= 600 Ω
R
LOAD
= 5 V p-p,
OUT
101 141 112 dB
450 1500 300 1000 225 750 μV
Power Supply Rejection Ratio 2 10 2 10 2 10 dB
Input Voltage Range
Common-Mode Resistance
3
4
−5.4 +5.4 −5.4 +5.4 −5.4 +5.4 V
7.5 10 7.5 kΩ
Bias Current 500 500 500 nA
OUTPUT CHARACTERISTICS
Output Swing −4 +4 −4 +4 −4 +4 V
T
= −40°C to +85°C −3.9 +3.9 −3.9 +3.9 −3.9 +3.9 V
A
Short-Circuit Current Limit Sourcing 100 100 100 mA
Sinking 60 60 60 mA
POWER SUPPLY
Supply Current (per Amplifier) 2.3 2.5 2.3 2.5 2.3 2.5 mA
T
1
Includes amplifier voltage and current noise, as well as noise of internal resistors.
2
Includes input bias and offset errors.
3
At voltages beyond the rails, internal ESD diodes begin to turn on. In some configurations, the input voltage range may be limited by the internal op amp (see the
Input Voltage Range section for details).
4
Internal resistors are trimmed to be ratio matched but have ±20% absolute accuracy. Common-mode resistance was calculated with both inputs in parallel. Common-
mode impedance at only one input is 2× the resistance listed.
= −40°C to +85°C 3 3 3 mA
A
Rev. 0 | Page 4 of 20
AD8270
www.BDTIC.com/ADI
ABSOLUTE MAXIMUM RATINGS
Table 4.
Parameter Rating
Supply Voltage ±18 V
Output Short-Circuit Current
Input Voltage Range ±V
See derating
ve in Figure 2
cur
S
Storage Temperature Range −65°C to +130°C
Specified Temperature Range −40°C to +85°C
Package Glass Transition Temperature (TG) 130°C
ESD (Human Body Model) 1 kV
ESD (Charge Device Model) 1 kV
ESD (Machine Model) 0.1 kV
Stresses above those listed under Absolute Maximum Ratings
y cause permanent damage to the device. This is a stress
ma
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
THERMAL RESISTANCE
Table 5. Thermal Resistance
Thermal Pad θ
16-Lead LFCSP with Thermal Pad
JA
57 °C/W
Soldered to Board
16-Lead LFCSP with Thermal Pad
96 °C/W
Not Soldered to Board
The θJA values in Tabl e 5 assume a 4-layer JEDEC standard
board with zero airflow. If the thermal pad is soldered to the
board, it is also assumed it is connected to a plane. θ
exposed pad is 9.7°C/W.
Unit
at the
JC
MAXIMUM POWER DISSIPATION
The maximum safe power dissipation for the AD8270 is limited
by the associated rise in junction temperature (T
approximately 130°C, which is the glass transition temperature,
the plastic changes its properties. Even temporarily exceeding
this temperature limit may change the stresses that the package
exerts on the die, permanently shifting the parametric performance
of the amplifiers. Exceeding a temperature of 130°C for an
extended period of time can result in a loss of functionality.
The AD8270 has built-in, short-circuit p
output current to approximately 100 mA (see Figure 19 for
ore information). While the short-circuit condition itself does
m
not damage the part, the heat generated by the condition can
cause the part to exceed its maximum junction temperature,
with corresponding negative effects on reliability.
3.2
2.8
2.4
2.0
1.6
1.2
PAD NOT SOLDERED
0.8
MAXIMUM POWER DISSIPATION (W)
0.4
0
–50–2502550751001 25
Figure 2. Maximum Power Dissipation vs. Ambient Temperature
ESD CAUTION
PAD SOLDERED
= 57°C/W
θ
JA
= 96°C/W
θ
JA
AMBIENT TEMPERATURE (°C)
) on the die. At
J
rotection that limits the
TJ MAXIMUM = 130°C
06979-003
Rev. 0 | Page 5 of 20
AD8270
B
www.BDTIC.com/ADI
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
S
S
–V
OUTA
+V
OUT
14
13
15
16
PIN 1
1–IN1A
2–IN2A
3+IN2A
4+IN1A
INDICATOR
AD8270
TOP VIEW
(Not to Scale)
5
6
12 –IN1B
11 –I N2B
10 +IN2B
9+IN1B
8
7
REF1A
REF2A
REF2B
REF1B
Figure 3. Pin Configuration
06979-002
Table 6. Pin Function Descriptions
Pin No. Mnemonic Description
1 −IN1A 10 kΩ Resistor Connected to Negative Terminal of Op Amp A.
2 −IN2A 10 kΩ Resistor Connected to Negative Terminal of Op Amp A.
3 +IN2A 10 kΩ Resistor Connected to Positive Terminal of Op Amp A.
4 +IN1A 10 kΩ Resistor Connected to Positive Terminal of Op Amp A.
5 REF1A
6 REF2A
7 REF2B
8 REF1B
20 kΩ Resistor Connected to Positive Terminal of Op Amp A. Most configurations use this pin as a reference
oltage input.
v
20 kΩ Resistor Connected to Positive Terminal of Op Amp A. Most configurations use this pin as a reference
oltage input.
v
20 kΩ Resistor Connected to Positive Terminal of Op Amp B. Most configurations use this pin as a reference
oltage input.
v
20 kΩ Resistor Connected to Positive Terminal of Op Amp B. Most configurations use this pin as a reference
oltage input.
v
9 +IN1B 10 kΩ Resistor Connected to Positive Terminal of Op Amp B.
10 +IN2B 10 kΩ Resistor Connected to Positive Terminal of Op Amp B.
11 −IN2B 10 kΩ Resistor Connected to Negative Terminal of Op Amp B.
12 −IN1B 10 kΩ Resistor Connected to Negative Terminal of Op Amp B.
13 −V
S
Negative Supply.
14 OUTB Op Amp B Output.
15 OUTA Op Amp A Output.
16 +V
S
Positive Supply.
Rev. 0 | Page 6 of 20
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