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NC = NO CONNECT
AD825
TOP VIEW
(Not to Scale)
NC
1
–IN
2
+IN
3
–V
S
4
NC
8
+V
S
7
OUTPUT
6
NC
5
00876-E-001
NC
1
NC
2
NC
3
–
INPUT
4
+INPUT
5
–V
S
6
NC
7
NC
8
NC
10
NC
16
NC
15
NC
14
+V
S
13
OUTPUT
12
NC
11
NC
9
AD825
TOP VIEW
(Not to Scale)
NC = NO CONNECT
00876-E-002
00876-E-003
10V200ns
10V
Data Sheet
FEATURES
High speed
41 MHz, −3 dB bandwidth
125 V/µs slew rate
80 ns settling time
Input bias current of 20 pA and noise current of 10 fA/√Hz
Input voltage noise of 12 nV/√Hz
Fully specified power supplies: ±5 V to ±15 V
Low distortion: −76 dB at 1 MHz
High output drive capability
Drives unlimited capacitance load
50 mA min output current
No phase reversal when input is at rail
Available in 8-lead SOIC
The AD825 is a superbly optimized operational amplifier for
high speed, low cost, and dc parameters, making it ideally
suited for a broad range of signal conditioning and data
acquisition applications. The ac performance, gain, bandwidth,
slew rate, and drive capability are all very stable over
temperature. The AD825 also maintains stable gain under
varying load conditions.
The unique input stage has ultralow input bias current and
input current noise. Signals that go to either rail on this high
performance input do not cause phase reversals at the output.
These features make the AD825 a good choice as a buffer for
MUX outputs, creating minimal offset and gain errors.
The AD825 is fully specified for operation with dual ±5 V and
±15 V supplies. This power supply flexibility, and the low
supply current of 6.5 mA with excellent ac characteristics under
all supply conditions, makes the AD825 well-suited for many
demanding applications.
responsi bility is as sumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Device s.
All limits are determined to be at least four standard deviations away from mean value. At TA = 25°C, VS = ±15 V, unless otherwise noted.
Table 1.
AD825A
Parameter Conditions VS Min Typ Max Unit
DYNAMIC PERFORMANCE
Unity Gain Bandwidth ±15 V 23 26 MHz
Bandwidth for 0.1 dB Flatness Gain = +1 ±15 V 18 21 MHz
−3 dB Bandwidth Gain = +1 ±15 V 44 46 MHz
Slew Rate R
= 1 kΩ, G = +1 ±15 V 125 140 V/µs
LOAD
Settling Time to 0.1% 0 V to 10 V Step, AV = −1 ±15 V 150 180 ns
to 0.1% 0 V to 10 V Step, AV = −1 ±15 V 180 220 ns
Total Harmonic Distortion FC = 1 MHz, G = −1 ±15 V −77 dB
Differential Gain Error NTSC ±15 V 1.3 %
(R
= 150 Ω) Gain = +2
LOAD
Differential Phase Error NTSC ±15 V 2.1 Degrees
(R
= 150 Ω) Gain = +2
LOAD
INPUT OFFSET VOLTAGE ±15 V 1 2 mV
MIN
MAX
Offset Drift 10 µV/°C
INPUT BIAS CURRENT ±15 V 15 40 pA
T
T
5 pA
MIN
700 pA
MAX
INPUT OFFSET CURRENT ±15 V 20 30 pA
T
T
R
V
R
V
R
5 pA
MIN
440 pA
MAX
OUT
= 1 kΩ 70 76 dB
LOAD
= ±7.5 V ±15 V
OUT
= 1 kΩ 70 76 dB
LOAD
= ±7.5 V ±15 V
OUT
= 150 kΩ (50 mA Output) 68 74 dB
LOAD
COMMON-MODE REJECTION VCM = ±10 ±15 V 71 80 dB
INPUT VOLTAGE NOISE f = 10 kHz ±15 V 12
INPUT COMMON-MODE VOLTAGE RANGE ±15 V ±13.5 V
OUTPUT VOLTAGE SWING R
R
= 1 kΩ ±15 V 13 ±13.3 V
LOAD
= 500 Ω ±15 V 12.9 ±13.2 V
LOAD
Output Current ±15 V 50 mA
Short-Circuit Current ±15 V 100 mA
INPUT RESISTANCE 5 ×1011 Ω
INPUT CAPACITANCE 6 pF
OUTPUT RESISTANCE Open Loop 8 Ω
POWER SUPPLY
Quiescent Current ±15 V 6.5 7.2 mA
MIN
MAX
nV/√Hz
fA/√Hz
Rev. G | Page 3 of 12
Page 4
AD825 Data Sheet
Unity Gain Bandwidth
±5 V
18
21 MHz
INPUT CURRENT NOISE
f = 10 kHz
±5 V
10
T
to T
±5 V
7.5
mA
All limits are determined to be at least four standard deviations away from mean value. At TA = 25°C, VS = ±5 V unless otherwise noted.
Table 2.
AD825A
Parameter Conditions VS Min Typ Max Unit
DYNAMIC PERFORMANCE
Bandwidth for 0.1 dB Flatness Gain = +1 ±5 V 8 10 MHz
−3 dB Bandwidth Gain = +1 ±5 V 34 37 MHz
Slew Rate R
Settling Time to 0.1% −2.5 V to +2.5 V ±5 V 75 90 ns
to 0.01% −2.5 V to +2.5 V ±5 V 90 110 ns
Total Harmonic Distortion FC = 1 MHz, G = −1 ±5 V −76 dB
Differential Gain Error NTSC ±5 V 1.2 %
(R
= 150 Ω) Gain = +2
LOAD
Differential Phase Error NTSC ±5 V 1.4 Degrees
(R
= 150 Ω) Gain = +2
LOAD
INPUT OFFSET VOLTAGE ±5 V 1 2 mV
T
Offset Drift 10 µV/°C
INPUT BIAS CURRENT ±5 V 10 30 pA
T
T
INPUT OFFSET CURRENT ±5 V 15 25 pA
T
Offset Current Drift T
OPEN-LOOP GAIN V
R
R
COMMON-MODE REJECTION VCM = ±2 V ±5 V 69 80 dB
INPUT VOLTAGE NOISE f = 10 kHz ±5 V 12
INPUT COMMON-MODE VOLTAGE RANGE ±5 V ± 3.5 V
OUTPUT VOLTAGE SWING R
R
Output Current ±5 V 50 mA
Short-Circuit Current 80 mA
INPUT RESISTANCE 5 ×1011 Ω
INPUT CAPACITANCE 6 pF
OUTPUT RESISTANCE Open Loop 8 Ω
POWER SUPPLY
Quiescent Current ±5 V 6.2 6.8 mA
POWER SUPPLY REJECTION VS = ±5 V to ±15 V 76 88 dB
= 1 kΩ, G = −1 ±5 V 115 130 V/µs
LOAD
to T
MIN
MIN
MAX
MIN
MAX
OUT
LOAD
LOAD
LOAD
LOAD
MIN
5 mV
MAX
5 pA
600 pA
5 pA
280 pA
= ±2.5 ±5 V
= 500 Ω 64 66 dB
= 150 Ω 64 66 dB
= 500 Ω +3.2 ±3.4 V
= 150 Ω ±5 V +3.1 ±3.2 V
MAX
Hz
nV/√
fA/√Hz
Rev. G | Page 4 of 12
Page 5
Data Sheet AD825
–
ABSOLUTE MAXIMUM RATINGS
Table 3.
Parameter Rating
Supply Voltage ±18 V
Internal Power Dissipation1
Small Outline (R) See Figure 6
Input Voltage (Common Mode) ±VS
Differential Input Voltage ±VS
Output Short-Circuit Duration See Figure 6
Storage Temperature Range (R-8, RW-16) −65°C to +125°C
Operating Temperature Range −40°C to +85°C
Lead Temperature Range
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
2.5
2.0
PIN CONFIGURATIONS
NC
1
–IN
2
TOP VIEW
3
+IN
(Not to Scale)
4
V
S
NC = NO CONNECT
Figure 4. 8-Lead SOIC
NC
1
NC
2
3
NC
–INPUT
4
+INPUT
5
(Not to Scale)
6
–V
S
NC
7
8
NC
NC = NO CONNECT
Figure 5. 16-Lead SOIC
16-LEAD SOIC PACKAGE
AD825
AD825
TOP VIEW
NC
8
+V
7
6
OUTPUT
5
NC
16
15
14
13
12
11
10
9
S
NC
NC
NC
+V
S
OUTPUT
NC
NC
NC
00876-E-001
00876-E-002
TJ = 150°C
1.5
1.0
0.5
MAXIMUM POWER DISSIPATION (W)
8-LEAD SOIC PACKAGE
0
–5090–40–30–20–100 1020305060708040
AMBIENT TEMPERATURE (°C)
00876-E-004
Figure 6. Maximum Power Dissipation vs. Temperature
ESD CAUTION
Rev. G | Page 5 of 12
Page 6
AD825
TYPICAL PERFORMANCE CHARACTERISTICS
20
15
100
10
5
RL = 150RL = 1k
SUPPLY VOLTAGE (V)
OUTPUT SWING (V)
–10
–15
–20
0
–5
0182
46810121416
Figure 7. Output Voltage Swing vs. Supply Voltage
15
10
VS = ±15V
5
VS = ±5V
0
–5
OUTPUT SWING (V)
–10
VS = ±15V
10
1
OUTPUT IMPEDANCE ()
0.1
0.01
00876-E-005
10010M1k
10k100k1M
FREQUENCY (Hz)
00876-E-008
Figure 10. Closed-Loop Output Impedance vs. Frequency
35
30
25
20
15
10
UNITY GAIN BANDWIDTH (MHz)
5
BANDWIDTH
PHASE MARGIN
80
60
40
PHASE MARGIN (°C)
–15
0100
200 300 400 500 600 700 800 900 1000
LOAD RESISTANCE ()
Figure 8. Output Voltage Swing vs. Load Resistance
7.0
6.5
6.0
SUPPLY CURRENT (mA)
5.5
5.0
0202
4 6 8 1012141618
SUPPLY VOLTAGE (±V)
Figure 9. Quiescent Supply Current vs. Supply Voltage
for Various Temperatures
–40°
+25°
+85°
0
00876-E-006
–60
–200204080 100 120
–40
TEMPERATURE (°C)
60
140
20
00876-E-009
Figure 11. Unity Gain Bandwidth and Phase Margin vs. Temperature
80
VS = ±15V
70
VS = ±5V
60
50
40
30
OPEN-LOOP GAIN (dB)
20
10
0
1k100M10k
00876-E-007
100k1M10M
FREQUENCY (Hz)
180
135
90
45
0
OPEN-LOOP PHASE (Degrees)
00876-E-010
Figure 12. Open-Loop Gain and Phase Margin vs. Frequency
Rev. F | Page 6 of 12
Page 7
AD825
80
75
VS = ±15V
30
RL = 1k
20
70
OPEN-LOOP GAIN (dB)
65
60
1010k1k
LOAD RESISTANCE ()
Figure 13. Open-Loop Gain vs. Load Resistance
10
0
–10
–20
–30
–40
PSR (dB)
–50
–60
–70
–80
–90
10k10M100k
FREQUENCY (Hz)
Figure 14. Power Supply Rejection vs. Frequency
V
= ±5V
S
1M
–PSRR
+PSRR
RL = 150
10
OUTPUT VOLTAGE (V p-p)
0
10k100k
00876-E-011
FREQUENCY (Hz)
1M10M
00876-E-014
Figure 16. Large Signal Frequency Response; G = +2
200
180
160
140
120
100
80
SETTLING TIME (ns)
60
40
20
0
00876-E-012
10–108
0.01%
0.1%
6420–2–4–6–8
OUTPUT SWING (0 to ±V)
0.01%
0.1%
00876-E-015
Figure 17. Output Swing and Error vs. Settling Time
130
120
110
100
90
80
CMR (dB)
70
60
50
40
30
10010k1M
1010M1k
VS = ±5V
VS = ±15V
FREQUENCY (Hz)
100k
Figure 15. Commo n-Mode Re jection v s. Frequency
00876-E-013
Rev. F | Page 7 of 12
–50
–55
–60
–65
–70
DISTORTION (dB)
–75
–80
–85
100k10M1M
FREQUENCY (Hz)
Figure 18. Harmonic Distortion vs. Frequency
SECOND
THIRD
00876-E-016
Page 8
AD825
160
140
120
100
80
60
SLEW RATE (V/s)
40
20
0
–60
±15V
±5V
–40
–200204080 100 120
TEMPERATURE (°C)
60
Figure 19. Slew Rate vs. Temperature
140
10F
+V
S
0.01F
7
HP PULSE (LS)
OR
FUNCTION (SS)
GENERATOR
2
AD825
V
IN
3
50
6
4
0.01F
10F
–V
S
TEKTRONIX
OUT
P6204 FET
PROBE
R
L
V
TEKTRONIX
7A24
PREAMP
00876-E-020
Figure 22. Noninverting Amplifier Connection
00876-E-017
2
1
0
–1
–2
–3
GAIN (dB)
–4
V
IN
V
–5
–6
–7
–8
1k100k10M10k1M
0.1dB FLATNESS
S
±5V
10MHz
±15V
21MHz
V
OUT
FREQUENCY (Hz)
Figure 20. Closed-Loop Gain vs. Frequency, Gain = +1
2
1
0
–1
–2
–3
V
IN
GAIN (dB)
–4
–5
V
–6
–7
–8
S
±5V
±15V
1k100k10M10k1M
1k1k
0.1dB FLATNESS
7.7MHz
9.8MHz
FREQUENCY (Hz)
V
OUT
Figure 21. Closed-Loop Gain vs. Frequency, Gain = −1
5V
5V
00876-E-018
Figure 23. Noninverting Large Signal Pulse Response, R
200mV
200mV
00876-E-019
Figure 24. Noninverting Small Signal Pulse Response, R
100ns
50ns
= 1 kΩ
L
= 1 kΩ
L
00876-E-021
00876-E-022
Rev. F | Page 8 of 12
Page 9
AD825
5V
5V
100ns
Figure 25. Noninverting Large Signal Pulse Response, R
200mV
50ns
= 150 Ω
L
5V
00876-E-023
5V
Figure 28. Inverting Large Signal Pulse Response, R
100ns
50ns200mV
= 1 kΩ
L
00876-E-026
200mV
Figure 26. Noninverting Small Signal Pulse Response, R
1k
+V
10F
S
0.01F
HP PULSE
GENERATOR
V
IN
R
IN
1k
50
2
3
7
AD825
4
–V
S
0.01F
10F
6
V
OUT
Figure 27. Inverting Amplifier Connection
TEKTRONIX
P6204 FET
PROBE
R
L
00876-E-024
= 150 Ω
L
TEKTRONIX
7A24
PREAMP
200mV
Figure 29. Inverting Small Signal Pulse Response, R
= 1 kΩ
L
00876-E-027
00876-E-025
Rev. F | Page 9 of 12
Page 10
AD825 Data Sheet
TEKTRONIX
P6204 FET
PROBE
HP PULSE
GENERATOR
50Ω
R
IN
1kΩ
C
L
V
OUT
V
IN
TEKTRONIX
7A24
PREAMP
AD825
7
4
3
6
2
+V
S
0.01µF
10µF
–V
S
0.01µF
10µF
00876-E-028
1kΩ
INPUT
OUTPUT
5V
5V
500ns
00876-E-029
POS
NEG
VNEG
VPOS
VOUT
C
F
00876-E-030
DRIVING CAPACITIVE LOADS
The internal compensation of the AD825, together with its high
output current drive, permits excellent large signal performance
while driving extremely high capacitive loads.
Figure 30. Inverting Amplifier Driving a Capacitive Load
Figure 31. Inverting Amplifier Pulse Response
While Driving a 400 pF Capacitive Load
THEORY OF OPERATION
The AD825 is a low cost, wideband, high performance FET
input operational amplifier. With its unique input stage design,
the AD825 ensures no phase reversal, even for inputs that
exceed the power supply voltages, and its output stage is
designed to drive heavy capacitive or resistive loads with small
changes relative to no load conditions.
The AD825 (Figure 32) consists of common-drain, commonbase FET input stage driving a cascoded, common-base
matched NPN gain stage. The output buffer stage uses emitter
followers in a Class AB amplifier that can deliver large current
to the load while maintaining low levels of distortion.
Figure 32. Simplified Schematic
The capacitor, CF, in the output stage, enables the AD825 to
drive heavy capacitive loads. For light loads, the gain of the
output buffer is close to unity, C
is bootstrapped, and not much
F
happens. As the capacitive load is increased, the gain of the
output buffer is decreased and the bandwidth of the amplifier is
reduced through a portion of C
adding to the dominant pole.
F
As the capacitive load is further increased, the amplifier’s
bandwidth continues to drop, maintaining the stability of the
AD825.
INPUT CONSIDERATION
The AD825 with its unique input stage ensures no phase
reversal for signals as large as or even larger than the supply
voltages. Also, layout considerations of the input transistors
ensure functionality even with a large differential signal.
The need for a low noise input stage calls for a larger FET
transistor. One should consider the additional capacitance that
is added to ensure stability. When filters are designed with the
AD825, one needs to consider the input capacitance (5 pF to
6 pF) of the AD825 as part of the passive network.
GROUNDING AND BYPASSING
The AD825 is a low input bias current FET amplifier. Its high
frequency response makes it useful in applications, such as
photodiode interfaces, filters, and audio circuits. When
designing high frequency circuits, some special precautions are
in order. Circuits must be built with short interconnects, and
resistances should have low inductive paths to ground. Power
supply leads should be bypassed to common as close as possible
to the amplifier pins. Ceramic capacitors of 0.1 µF are
recommended.
Rev. G | Page 10 of 12
Page 11
Data Sheet AD825
R1f
C1
CUTOFF
π=2
414.1
()
R1f
faradsC2
CUTOFF
π=2
707.0
()
Ωk100Ωk10toTypicallySelectedUserR2R1==
AD825
C3
0.1µF
C4
0.1µF
V
OUT
V
IN
C2
6pF
–5V
C1
24pF
R1
9.31kΩR29.31kΩ
+5V
00876-E-031
FREQUENCY (Hz)
10k
100M100k
HIGH FREQUENCY REJECTION (dB)
1M10M
0
–
10
–
20
–
30
–40
–50
–60
–70
–80
00876-E-032
SECOND-ORDER LOW-PASS FILTER
A second-order Butterworth low-pass filter can be implemented
using the AD825 as shown in Figure 33. The extremely low bias
currents of the AD825 allow the use of large resistor values and,
consequently, small capacitor values without concern for
developing large offset errors. Low current noise is another
factor in permitting the use of large resistors without having to
worry about the resultant voltage noise.
With the values shown, the corner frequency will be 1 MHz.
The equations for component selection are shown below. Note
that the noninverting input (and the inverting input) has an
input capacitance of 6 pF. As a result, the calculated value of C1
(12 pF) is reduced to 6 pF.
A plot of the filter frequency response is shown in Figure 34;
better than 40 dB of high frequency rejection is provided.
Figure 34. Frequency Response of Second-Order Butterworth Filter
Rev. G | Page 11 of 12
Page 12
AD825 Data Sheet
C
OUTLINE DIMENSIONS
5.00(0.1968)
4.80(0.1890)
4.00 (0.1574)
3.80 (0.1497)
0.25 (0.0098)
0.10 (0.0040)
COPLANARITY
0.10
CONTROLLING DIMENSIONS ARE IN MILLIMETERS; INCH DIMENSIONS
(IN PARENTHESES)ARE ROUNDED-OFF MILLIMETER EQUIVALENTSFOR
REFERENCE ONLYAND ARE NOT APPROPRIATE FOR USE IN DESIGN.
85
1
1.27 (0.0500)
SEATING
PLANE
COMPLIANT TO JEDEC STANDARDS MS-012-AA
BSC
6.20 (0.2441)
5.80 (0.2284)
4
1.75 (0.0688)
1.35 (0.0532)
0.51 (0.0201)
0.31 (0.0122)
8°
0°
0.25 (0.0098)
0.17 (0.0067)
Figure 35. 8-Lead Standard Small Outline Package [SOIC]
Narrow Body (R-8)
Dimensions shown in millimeters (inches)
10.50 (0.4134)
10.10 (0.3976)
16
1
9
7.60 (0.2992)
7.40 (0.2913)
8
10.65 (0.4193)
10.00 (0.3937)
0.50 (0.0196)
0.25 (0.0099)
1.27 (0.0500)
0.40 (0.0157)
45°
012407-A
7
5
2
5
(
0
.
0
2
9
(
0
.
0
0
9
1.27 (0.0500)
0.40 (0.0157)
)
5
45°
8
)
03-27-2007-B
0.30 (0.0118)
0.10 (0.0039)
OPLANARITY
0.10
0
1.27 (0.0500)
BSC
0.51 (0.0201)
0.31 (0.0122)
CONTROLLING DIMENSIONS ARE IN MILLIMETERS; INCH DIMENSIONS
(IN PARENTHESES)ARE ROUNDED-OFF MILLIMETER EQUIVALENTS FOR
REFERENCE ONLYAND ARE NOT APPROPRIATE FOR USE IN DESIGN.
COMPLIANT TO JEDEC STANDARDS MS-013-AA
2.65 (0.1043)
2.35 (0.0925)
SEATING
PLANE
8°
0°
0.33 (0.0130)
0.20 (0.0079)
.
0
.
Figure 36. 16-Lead Standard Small Outline Package [SOIC_W]
Wide Body (RW-16)
Dimensions shown in millimeters (inches)
ORDERING GUIDE
Model1 Temperature Range Package Description Package Option
AD825ARZ −40°C to +85°C 8-Lead SOIC_N R-8
AD825ARZ-REEL −40°C to +85°C 8-Lead SOIC_N, 13" Tape and Reel R-8
AD825ARZ-REEL7 −40°C to +85°C 8-Lead SOIC_N, 7" Tape and Reel R-8
AD825ARZ-16 −40°C to +85°C 16-Lead SOIC_W RW-16
AD825ARZ-16-REEL −40°C to +85°C 16-Lead SOIC_W, 13" Tape and Reel RW-16
AD825ARZ-16-REEL7 −40°C to +85°C 16-Lead SOIC_W, 7" Tape and Reel RW-16
AD825AR-EBZ Evaluation Board
AD825ACHIPS Die