ANALOG DEVICES AD823A Service Manual

Wide Supply Dual, 17 MHz, Rail-to-Rail
Data Sheet

FEATURES

Single-supply operation
Output swings rail-to-rail Input voltage range extends below ground Single-supply capability from 3 V to 36 V
High load drive
Capacitive load drive of 470 pF (G = +1, 25% overshoot) Linear output current of 40 mA, 0.5 V from supplies
Excellent ac performance on 2.6 mA/amplifier
−3 dB bandwidth of 17 MHz, G = +1 325 ns settling time to 0.01% (2 V step) Slew rate of 30 V/μs Low distortion: −108 dBc at 20 kHz (G = −1, R
Good dc performance
700 μV maximum input offset voltage 1 μV/°C offset voltage drift
25 pA maximum input bias current Low noise: 14 nV/√Hz at 10 kHz No phase inversion with inputs to the supply rails

APPLICATIONS

Photodiode preamps Active filters 12-bit to 16-bit data acquisition systems Medical instrumentation Precision instrumentation

GENERAL DESCRIPTION

The AD823A is a dual precision, 17 MHz, JFET input op amp manufactured in the extra fast complementary bipolar (XFCB) process. The AD823A can operate from a single supply of 3 V to 36 V or from dual supplies of ±1.5 V to ±18 V. It has true single-supply capability with an input voltage range extending below ground in single-supply mode. Output voltage swing extends to within 20 mV of each rail for IOUT ≤ 100 μA, providing outstanding output dynamic range. It also has a linear output current of 40 mA, 0.5 V from the supply rails.
An offset voltage of 700 μV maximum, an offset voltage drift of 1 μV/°C, and typical input bias currents of 0.3 pA provide dc precision with source impedances up to 1 GΩ. The AD823A provides 17 MHz, −3 dB bandwidth, and a 30 V/μs slew rate with a low supply current of only 2.6 mA per amplifier. It also provides low input voltage noise of 14 nV/√Hz and −108 dB SFDR at 20 kHz. The AD823A has low input capacitances (0.6 pF differ­ential and 1.3 pF common mode) and drives more than 500 pF of direct capacitive load as a follower. This lets the amplifier handle a wide range of load conditions.
= 2 kΩ)
L
FET Input Amplifier
AD823A

CONNECTION DIAGRAM

1
OUT1
–IN1
2 3
+IN1
–V
4
S
AD823A
Figure 1. 8-Lead SOIC
AD823A
OUT1 1
2
–IN1 +IN1 3
–V
4
S
TOP VIEW
(Not to Scale)
Figure 2. 8-Lead MSOP
VS = 3V C
= 50pF
L
G = +1
3.0V
1.5V
0V
500mV/DIV
Figure 3. Output Swing, +V
This combination of ac and dc performance, plus the outstanding load drive capability, results in an exceptionally versatile ampli­fier for applications such as ADC drivers, high speed active filters, and other low voltage, high dynamic range systems.
The AD823A is available over the industrial temperature range of −40°C to +85°C and is offered in an 8-lead SOIC package and an 8-lead MSOP package.
8
+V
S
OUT2
7
–IN2
6
+IN2
5
09439-001
+V
8
S
7
OUT2 –IN26 +IN25
09439-102
200µs/DIV
= +3 V, G = +1
S
9439-049
Rev. B
Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners.
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AD823A Data Sheet
TABLE OF CONTENTS
Features .............................................................................................. 1
Applications ....................................................................................... 1
General Description ......................................................................... 1
Connection Diagram ....................................................................... 1
Revision History ............................................................................... 2
Specifications ..................................................................................... 3
5 V Operation ............................................................................... 3
3.3 V Operation ............................................................................ 4
±15 V Operation ........................................................................... 5
Absolute Maximum Ratings ............................................................ 6
Thermal Resistance ...................................................................... 6
ESD Caution .................................................................................. 6

REVISION HISTORY

6/12—Rev. A to Rev. B
Added Text to Absolute Maximum Ratings Section .................... 6
Changes to Equation 8 ................................................................... 18
5/12—Revision A: Initial Version
Pin Configuration and Function Descriptions ..............................7
Typical Performance Characteristics ..............................................8
Theory of Operation ...................................................................... 14
Output Impedance ..................................................................... 14
Applications Information .............................................................. 15
Input Characteristics .................................................................. 15
Output Characteristics............................................................... 15
Wideband Photodiode Preamp ................................................ 16
Active Filter ................................................................................. 18
Maximizing Performance Through Proper Layout ............... 19
Outline Dimensions ....................................................................... 20
Ordering Guide .......................................................................... 20
Rev. B | Page 2 of 20
Data Sheet AD823A
Slew Rate
G = −1, V
= 4 V step
25
30 V/µs
V
= 2 V p-p, f = 20 kHz, G = +1, RL = 1 kΩ
−99 dBc
Maximum Offset over Temperature
0.2
1.3
mV
Open-Loop Gain
V
= 0.2 V to 4 V, RL = 2 kΩ
40
175 V/mV
IL = ±2 mA
0.026 to 4.96
V
B

SPECIFICATIONS

5 V OPERATION

TA = 25°C, +VS = 5 V, RL = 2 kΩ to 2.5 V, unless otherwise noted.
Table 1.
Parameter Conditions Min Typ Max Unit
DYNAMIC PERFORMANCE
−3 dB Bandwidth G = +1, V
Full Power Response V
OUT
Settling Time
To 0.1% G = −1, V To 0.01% G = −1, V
NOISE/DISTORTION PERFORMANCE
Input Voltage Noise f = 10 kHz 14 nV/√Hz
Input Current Noise f = 1 kHz 1 fA/√Hz
Harmonic Distortion (SFDR) V
OUT
OUT
Crosstalk
f = 1 kHz RL = 5 kΩ −123 dB f = 1 MHz RL = 5 kΩ −77 dB
DC PERFORMANCE
Initial Offset 0.12 0.7 mV
≤ 0.2 V p-p 14.1 17 MHz
OUT
= 2 V p-p 4.8 MHz
OUT
= 2 V step 240 ns
OUT
= 2 V step 325 ns
OUT
= 2 V p-p, f = 20 kHz, G = −1, RF = RG = 4 kΩ −108 dBc
Offset Drift 1 µV/°C
Input Bias Current VCM = 0 V to 4 V 0.3 25 pA
At T
VCM = 0 V to 4 V 10 25 pA
MAX
Input Offset Current 0.3 20 pA
At T
3.5 pA
MAX
OUT
T
to T
MIN
25 V/mV
MAX
INPUT CHARACTERISTICS
Input Common-Mode Voltage Range −0.2 to +3 −0.2 to +3.8 V
Input Resistance 1013 Ω
Input Capacitance Differential Mode 0.6 pF
Common Mode 1.3 pF
Common-Mode Rejection Ratio VCM = 0 V to 3 V 60 73 dB
OUTPUT CHARACTERISTICS
Output Voltage Swing
IL = ±100 µA 0.009 to 4.98 V
IL = ±10 mA 0.097 to 4.88 V
Linear Output Current V
= 0.5 V to 4.5 V 40 mA
OUT
Short-Circuit Current Sourcing to 2.5 V 50 mA
Sinking to 2.5 V 101 mA
Capacitive Load Drive G = +1 500 pF
POWER SUPPLY
Operating Range 3 36 V
Quiescent Current T
Power Supply Rejection Ratio VS = 5 V to 15 V, T
MIN
to T
, total 5.1 5.7 mA
MAX
to T
MIN
70 94 dB
MAX
Rev. | Page 3 of 20
AD823A Data Sheet
To 0.1%
G = −1, V
= 2 V step
350 ns
Input Voltage Noise
f = 10 kHz
14 nV/√Hz
f = 1 kHz
RL = 5 kΩ
−123
dB
Initial Offset
0.14 1 mV
At T
3.5 pA
Common Mode
1.3 pF
Output Voltage Swing
B

3.3 V OPERATION

TA = 25°C, +VS = 3.3 V, RL = 2 kΩ to 1.65 V, unless otherwise noted.
Table 2.
Parameter Conditions Min Typ Max Unit
DYNAMIC PERFORMANCE
−3 dB Bandwidth G = +1, V Full Power Response V
OUT
Slew Rate G = −1, V Settling Time
To 0.01% G = −1, V
NOISE/DISTORTION PERFORMANCE
Input Current Noise f = 1 kHz 1 fA/√Hz Harmonic Distortion (SFDR) V V
OUT
OUT
Crosstalk
f = 1 MHz RL = 5 kΩ −77 dB
DC PERFORMANCE
≤ 0.2 V p-p, VCM = 0.65 V 13.8 17.3 MHz
OUT
= 2 V p-p 3.7 MHz
= 2 V step, VCM = 0.65 V 18 23 V/µs
OUT
OUT
= 2 V step 460 ns
OUT
= 2 V p-p, f = 20 kHz, G = −1, RF = RG = 4 kΩ −108 dBc = 2 V p-p, f = 20 kHz, G = +1, RL = 100 Ω −70 dBc
Maximum Offset over Temperature 0.3 1.8 mV Offset Drift 1 µV/°C Input Bias Current VCM = 0 V to 2 V 0.3 25 pA
At T
VCM = 0 V to 2 V 10 25 pA
MAX
Input Offset Current 0.3 20 pA
MAX
Open-Loop Gain V
T
to T
MIN
14 V/mV
MAX
= 0.2 V to 2 V, RL = 2 kΩ 16 63 V/mV
OUT
INPUT CHARACTERISTICS
Input Common-Mode Voltage Range
−0.2 to
−0.2 to +1.8 V
+1 Input Resistance 1013 Ω Input Capacitance Differential Mode 0.6 pF
Common-Mode Rejection Ratio VCM = 0 V to 1 V 54 71 dB
OUTPUT CHARACTERISTICS
IL = ±100 µA 0.006 to 3.28 V IL = ±2 mA 0.04 to 3.26 V IL = ±10 mA 0.093 to 3.18 V
Linear Output Current V
= 0.5 V to 2.5 V 40 mA
OUT
Short-Circuit Current Sourcing to 1.5 V 44 mA Sinking to 1.5 V 86 mA Capacitive Load Drive G = +1 500 pF
POWER SUPPLY
Operating Range 3 36 V Quiescent Current T Power Supply Rejection Ratio VS = 3.3 V to 15 V, T
MIN
to T
, total 5.0 5.7 mA
MAX
to T
MIN
70 80 dB
MAX
Rev. | Page 4 of 20
Data Sheet AD823A
To 0.1%
G = −1, V
= 10 V step
380 ns
Input Voltage Noise
f = 10 kHz
13 nV/√Hz
DC PERFORMANCE
At T
VCM = 0 V
55
95
pA
Common-Mode Rejection Ratio
VCM = −15 V to +13 V
70
90 dB
IL = ±100 µA
−14.9 to +14.96
V
Linear Output Current
V
= −14.5 V to +14.5 V
44 mA
B

±15 V OPERATION

TA = 25°C, VS = ±15 V, RL = 2 kΩ to 0 V, unless otherwise noted.
Table 3.
Parameter Conditions Min Typ Max Unit
DYNAMIC PERFORMANCE
−3 dB Bandwidth G = +1, V Full Power Response V
OUT
Slew Rate G = −1, V Settling Time
To 0.01% G = −1, V
NOISE/DISTORTION PERFORMANCE
Input Current Noise f = 1 kHz 1 fA/√Hz Harmonic Distortion (SFDR)
V
OUT
4 kΩ
V
OUT
Crosstalk
f = 1 kHz RL = 5 kΩ −123 dB f = 1 MHz RL = 5 kΩ −77 dB
≤ 0.2 V p-p 16.5 19 MHz
OUT
= 2 V p-p 5.6 MHz
= 10 V step 31 35 V/µs
OUT
OUT
= 10 V step 510 ns
OUT
= 10 V p-p, f = 20 kHz, G = −1, RF = RG =
−101 dBc
= 10 V p-p, f = 20 kHz, G = +1, RL = 600 Ω −89 dBc
Initial Offset 0.8 3.5 mV Maximum Offset over Temperature 1.0 5 mV Offset Drift 1 µV/°C Input Bias Current VCM = 0 V 1.3 25 pA VCM = −10 V 3.5 pA
MAX
Input Offset Current 1.3 20 pA
At T
9.5 pA
MAX
Open-Loop Gain V
T
to T
MIN
80 V/mV
MAX
= +10 V to −10 V, RL = 2 kΩ 100 450 V/mV
OUT
INPUT CHARACTERISTICS
Input Common-Mode Voltage Range −15.2 to +13 −15.2 to +13.8 V Input Resistance 1013 Ω
Input Capacitance Differential Mode 0.6 pF Common Mode 1.3 pF
OUTPUT CHARACTERISTICS
Output Voltage Swing
IL = ±2 mA −14.97 to +14.96 V IL = ±10 mA −14.91 to +14.89 V
OUT
Short-Circuit Current Sourcing to 0 V 78 mA Sinking to 0 V 124 mA Capacitive Load Drive G = +1 500 pF
POWER SUPPLY
Operating Range 3 36 V Quiescent Current T Power Supply Rejection Ratio VS = 5 V to 15 V, T
MIN
to T
, total 6.3 8.4 mA
MAX
to T
MIN
70 94 dB
MAX
Rev. | Page 5 of 20
AD823A Data Sheet

ABSOLUTE MAXIMUM RATINGS

Table 4.
Parameter Rating
Supply Voltage 36 V Power Dissipation See Figure 4 Input Voltage (Common Mode) ±VS ± 0.7 V Differential Input Voltage ±VS Output Short-Circuit Duration See Figure 4 Storage Temperature Range −65°C to +125°C Operating Temperature Range −40°C to +85°C Lead Temperature (Soldering, 10 sec) 300°C ESD Ratings (Human Body Model) 4500 V ESD Ratings (Charged Device Model) 1250 V
Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Use the part with caution at the 30 V supply as excessive output current may overheat and damage the part.

THERMAL RESISTANCE

θJA is specified for the worst-case conditions, that is, a device soldered in a circuit board for surface-mount packages.
The specification is for the device in free air.
Table 5. Thermal Resistance
Package Type θJA Unit
8-Lead SOIC_N 120 °C/W 8-Lead MSOP 133 °C/W
2.0
1.5
8-LEAD SO IC
1.0 8-LEAD MSOP
0.5
MAXIMUM POWER DISSIPATION (W)
0
–45 –35 –25 –15 –5 5 15 25 35 45 55 65 75 85
Figure 4. Maximum Power Dissipation vs. Temperature
AMBIENT TEMPERATURE (°C)
TJ = 150°C
09439-004

ESD CAUTION

Rev. B | Page 6 of 20
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