50 nV/°C maximum input offset drift
10 ppm/°C maximum gain drift
Excellent dc performance
80 dB minimum CMR, G = 1
15 µV maximum input offset voltage
500 pA maximum bias current
0.7 µV p-p noise (0.1 Hz to 10 Hz)
Good ac performance
2.7 MHz bandwidth, G = 1
1.1 V/s slew rate
Rail-to-rail output
Shutdown/multiplex
Extra op amp
Single-supply range: 3 V to 6 V
Dual-supply range: ±1.5 V to ±3 V
ENHANCED PRODUCT FEATURES
Supports defense and aerospace applications (AQEC
standard)
Military temperature range (−55°C to +125°C)
Controlled manufacturing baseline
One assembly/test site
One fabrication site
Enhanced product change notification
Qualification data available on request
Instrumentation Amplifier
AD8231-EP
FUNCTIONAL BLOCK DIAGRAM
A216A115A014CS
13
1
NC
LOGIC
2
–INA
+IN
NC
3
4
IN-AMP
AD8231-EP
5
SDN
OP
AMP
6
+INB
Figure 1.
7
–INB
Table 1. Instrumentation and Difference Amplifiers by
Category
The AD8231-EP is a low drift, rail-to-rail, instrumentation
amplifier with software-programmable gains of 1, 2, 4, 8, 16, 32, 64,
or 128. The gains are programmed via digital logic or pin
strapping.
The AD8231-EP is ideal for applications that require precision
performance over a wide temperature range, such as industrial
temperature sensing and data logging. Because the gain setting
resistors are internal, maximum gain drift is only 10 ppm/°C for
gains of 1 to 32. Because of the auto-zero input stage, maximum
input offset is 15 μV and maximum input offset drift is just
50 nV/°C. CMRR is 80 dB for G = 1, increasing to 110 dB at
higher gains.
Rev. 0
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Anal og Devices for its use, nor for any infringements of patents or ot her
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
The AD8231-EP also includes an uncommitted op amp that can
be used for additional gain, differential signal driving, or filtering.
Like the in-amp, the op amp has an auto-zero architecture, railto-rail input, and rail-to-rail output.
The AD8231-EP includes a shutdown feature that reduces current
to a maximum of 1 μA. In shutdown, both amplifiers also have
a high output impedance, which allows easy multiplexing of
multiple amplifiers without additional switches.
The AD8231-EP is specified over the military temperature
range of −55°C to +125°C. It is available in a 4 mm × 4 mm 16lead LFCSP.
Additional application and technical information can be found
in the AD8231 data sheet.
Parameter Test Conditions/Comments Min Typ Max Unit
INSTRUMENTATION AMPLIFIER
Offset Voltage VOS RTI = V
Input Offset, V
Output Offset, V
Input Currents
Input Bias Current 250 500 pA
T
Input Offset Current 20 100 pA
T
Gains 1, 2, 4, 8, 16, 32, 64, or 128
Gain Error
Gain Drift TA = −55°C to +125°C
Linearity 0.2 V to 4.8 V, 10 kΩ load 3 ppm
CMRR
G = 1 80 dB
G = 2 86 dB
G = 4 92 dB
G = 8 98 dB
G = 16 104 dB
G = 32 110 dB
G = 64 110 dB
G = 128 110 dB
Noise en = √(e
Input Voltage Noise, eni f = 1 kHz 32 nV/√Hz
f = 1 kHz, TA = −55°C 27 nV/√Hz
f = 1 kHz, TA = 125°C 39 nV/√Hz
f = 0.1 Hz to 10 Hz 0.7 μV p-p
Output Voltage Noise, eno f = 1 kHz 58 nV/√Hz
f = 1 kHz, TA = −55°C 50 nV/√Hz
f = 1 kHz, TA = 125°C 70 nV/√Hz
f = 0.1 Hz to 10 Hz 1.1 μV p-p
Current Noise f = 10 Hz 20 fA/√Hz
Other Input Characteristics
Common-Mode Input Impedance 10||5 GΩ||pF
Power Supply Rejection Ratio 100 115 dB
Input Operating Voltage Range 0.05 4.95 V
Reference Input
Input Impedance
Voltage Range
= 2.5 V, G = 1, RL = 10 kΩ, TA = 25°C, unless otherwise noted.
REF
+ V
OSI
4 15 μV
OSI
/G
OSO
Average Temperature Drift TA = −55°C to +125°C 0.01 0.05 μV/°C
15 30 μV
OSO
Average Temperature Drift TA = −55°C to +125°C 0.05 0.5 μV/°C
= −55°C to +125°C 5 nA
A
= −55°C to +125°C 0.5 nA
A
G = 1 0.05 %
G = 2 to 128 0.8 %
G = 1 to 32 3 10 ppm/°C
G = 64 4 20 ppm/°C
G = 128 10 30 ppm/°C
0.2 V to 4.8 V, 2 kΩ load 5 ppm
2
+ (eno/G)2), V
ni
IN+
, V
= 2.5 V
IN−
28 kΩ
−0.2 +5.2 V
Rev. 0 | Page 3 of 20
AD8231-EP
Parameter Test Conditions/Comments Min Typ Max Unit
Dynamic Performance
Bandwidth
G = 1 2.7 MHz
G = 2 2.5 MHz
Gain Bandwidth Product
G = 4 to 128 7 MHz
Slew Rate 1.1 V/μs
Output Characteristics
Output Voltage High RL = 100 kΩ to ground 4.9 4.94 V
R
= 10 kΩ to ground 4.8 4.88 V
L
Output Voltage Low RL = 100 kΩ to 5 V 60 100 mV
R
= 10 kΩ to 5 V 80 200 mV
L
Short-Circuit Current 70 mA
Digital Interface
Input Voltage Low TA = −55°C to +125°C 1.0 V
Input Voltage High TA = −55°C to +125°C 4.0 V
T
Setup Time to CS High
Hold Time after CS High
= −55°C to +125°C 50 ns
A
T
= −55°C to +125°C 20 ns
A
OPERATIONAL AMPLIFIER
Input Characteristics
Offset Voltage, VOS 5 15 μV
Temperature Drift TA = −55°C to +125°C 0.01 0.06 μV/°C
Input Bias Current 250 500 pA
T
= −55°C to +125°C 5 nA
A
Input Offset Current 20 100 pA
T
= −55°C to +125°C 0.5 nA
A
Input Voltage Range 0.05 4.95 V
Open-Loop Gain 100 120 V/mV
Common-Mode Rejection Ratio 100 120 dB
Power Supply Rejection Ratio 100 110 dB
Voltage Noise Density 20 nV/√Hz
Voltage Noise f = 0.1 Hz to 10 Hz 0.4 μV p-p
Dynamic Performance
Gain Bandwidth Product 1 MHz
Slew Rate 0.5 V/μs
Output Characteristics
Output Voltage High RL = 100 kΩ to ground 4.9 4.96 V
R
= 10 kΩ to ground 4.8 4.92 V
L
Output Voltage Low RL = 100 kΩ to 5 V 60 100 mV
R
= 10 kΩ to 5 V 80 200 mV
L
Short-Circuit Current 70 mA
BOTH AMPLIFIERS
Power Supply
Quiescent Current 4 5 mA
Quiescent Current (Shutdown) 0.01 1 μA
Rev. 0 | Page 4 of 20
AD8231-EP
VS = 3.0 V, V
Table 3.
Parameter Conditions Min Typ Max Unit
INSTRUMENTATION AMPLIFIER
Offset Voltage VOS RTI = V
Average Temperature Drift 0.01 0.05 μV/°C
Average Temperature Drift 0.05 0.5 μV/°C
Input Currents
Input Bias Current 250 500 pA
T
Input Offset Current 20 100 pA
T
Gains 1, 2, 4, 8, 16, 32, 64, or 128
Gain Error
Gain Drift TA = −55°C to +125°C
CMRR
G = 1 80 dB
G = 2 86 dB
G = 4 92 dB
G = 8 98 dB
G = 16 104 dB
G = 32 110 dB
G = 64 110 dB
G = 128 110 dB
Noise
Input Voltage Noise, eni f = 1 kHz 40 nV/√Hz
f = 1 kHz, TA = −55°C 35 nV/√Hz
f = 1 kHz, TA = 125°C 48 nV/√Hz
f = 0.1 Hz to 10 Hz 0.8 μV p-p
Output Voltage Noise, eno f = 1 kHz 72 nV/√Hz
f = 1 kHz, TA = −55°C 62 nV/√Hz
f = 1 kHz, TA = 125°C 83 nV/√Hz
f = 0.1 Hz to 10 Hz 1.4 μV p-p
Current Noise f = 10 Hz 20 fA/√Hz
Other Input Characteristics
Common-Mode Input Impedance 10||5 GΩ||pF
Power Supply Rejection Ratio 100 115 dB
Input Operating Voltage Range 0.05 2.95 V
Reference Input
Input Impedance
Voltage Range
= 1.5 V, TA = 25°C, G = 1, RL = 10 kΩ, unless otherwise noted.
REF
+ V
/G
OSO
Input Offset, V
Output Offset, V
OSI
4 15 μV
OSI
15 30 μV
OSO
= −55°C to +125°C 5 nA
A
= −55°C to +125°C 0.5 nA
A
G = 1 0.05 %
G = 2 to 128 0.8 %
G = 1 to 32 3 10 ppm/°C
G = 64 4 20 ppm/°C
G = 128 10 30 ppm/°C
e
n
V
IN+
= √(e
, V
IN−
2
+ (eno/G)2)
ni
= 2.5 V, TA = 25°C
28 kΩ||pF
−0.2 +3.2 V
Rev. 0 | Page 5 of 20
AD8231-EP
Parameter Conditions Min Typ Max Unit
Dynamic Performance
Bandwidth
G = 1 2.7 MHz
G = 2 2.5 MHz
Gain Bandwidth Product
G = 4 to 128 7 MHz
Slew Rate 1.1 V/μs
Output Characteristics
Output Voltage High RL = 100 kΩ to ground 2.9 2.94 V
R
Output Voltage Low RL = 100 kΩ to 3 V 60 100 mV
R
Short-Circuit Current 40 mA
Digital Interface
Input Voltage Low TA = −55°C to +125°C 0.7 V
Input Voltage High TA = −55°C to +125°C 2.3 V
Setup Time to CS High
Hold Time after CS High
OPERATIONAL AMPLIFIERS
Input Characteristics
Offset Voltage, VOS 5 15 μV
Temperature Drift TA = −55°C to +125°C 0.01 0.06 μV/°C
Input Bias Current 250 500 pA
T
Input Offset Current 20 100 pA
T
Input Voltage Range 0.05 2.95 V
Open-Loop Gain 100 120 V/mV
Common-Mode Rejection Ratio 100 120 dB
Power Supply Rejection Ratio 100 110 dB
Voltage Noise Density 27 nV/√Hz
Voltage Noise f = 0.1 Hz to 10 Hz 0.6 μV p-p
Dynamic Performance
Gain Bandwidth Product 1 MHz
Slew Rate 0.5 V/μs
Output Characteristics
Output Voltage High RL = 100 kΩ to ground 2.9 2.96 V
R
Output Voltage Low RL = 100 kΩ to 3 V 60 100 mV
R
Short-Circuit Current 40 mA
BOTH AMPLIFIERS
Power Supply
Quiescent Current 3.5 4.5 mA
Quiescent Current (Shutdown) 0.01 1 μA
= 10 kΩ to ground 2.8 2.88 V
L
= 10 kΩ to 3 V 80 200 mV
L
T
= −55°C to +125°C 60 ns
A
T
= −55°C to +125°C 20 ns
A
= −55°C to +125°C 5 nA
A
= −55°C to +125°C 0.5 nA
A
= 10 kΩ to ground 2.8 2.82 V
L
= 10 kΩ to 3 V 80 200 mV
L
Rev. 0 | Page 6 of 20
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