50 nV/°C maximum input offset drift
10 ppm/°C maximum gain drift
Excellent dc performance
80 dB minimum CMR, G = 1
15 µV maximum input offset voltage
500 pA maximum bias current
0.7 µV p-p noise (0.1 Hz to 10 Hz)
Good ac performance
2.7 MHz bandwidth, G = 1
1.1 V/s slew rate
Rail-to-rail input and output
Shutdown/multiplex
Extra op amp
Single supply range: 3 V to 6 V
Dual supply range: ±1.5 V to ±3 V
APPLICATIONS
Pressure and strain transducers
Thermocouples and RTDs
Programmable instrumentation
Industrial controls
Weigh scales
GENERAL DESCRIPTION
The AD8231 is a low drift, rail-to-rail, instrumentation amplifier with software programmable gains of 1, 2, 4, 8, 16, 32, 64, or
128. The gains are programmed via digital logic or pin
strapping.
The AD8231 is ideal for applications that require precision
performance over a wide temperature range, such as industrial
temperature sensing and data logging. Because the gain setting
resistors are internal, maximum gain drift is only 10 ppm/°C.
Because of the auto-zero input stage, maximum input offset is
15 µV and maximum input offset drift is just 50 nV/°C. CMRR
is also guaranteed over temperature at 80 dB for G = 1, increasing to 110 dB at higher gains.
Instrumentation Amplifier
AD8231
FUNCTIONAL BLOCK DIAGRAM
A216A115A014CS
13
1
NC
LOGIC
2
–INA
+IN
NC
3
4
IN-AMP
AD8231
5
SDN
OP
AMP
7
6
+INB
Figure 1.
–INB
Table 1. Instrumentation/Difference Amplifiers by Category
High
Performance
AD8221AD6231AD628AD620AD6271AD8231
1
AD8220
AD8222AD524AD8251
1
AD8224
AD624AD8556AD8557
1
Rail-to-rail output.
Low
Cost
AD85531AD629AD621AD8250
AD526AD8555
High
Voltage
Mil
Grade
The AD8231 also includes an uncommitted op amp that can be
used for additional gain, differential signal driving or filtering.
Like the in-amp, the op amp has an auto-zero architecture, railto-rail input, and rail-to-rail output.
The AD8231 includes a shutdown feature that reduces current
to a maximum of 1 µA. In shutdown, both amplifiers also have
a high output impedance. This allows easy multiplexing of
multiple amplifiers without additional switches.
The AD8231 is specified over the extended industrial temperature range of −40°C to +125°C. It is available in a 4 mm × 4 mm
16-lead LFCSP (chip scale).
12
+V
S
11
–V
S
10
OUTA
9
REF
8
OUTB
Low
Power
06586-001
Digital
Gain
1
1
1
1
Rev. 0
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Anal og Devices for its use, nor for any infringements of patents or ot her
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
Parameter Conditions Min Typ Max Unit
INSTRUMENTATION AMPLIFIER
OFFSET VOLTAGE VOS RTI = V
Input Offset, V
Average Temperature Drift TA = −40°C to +125°C 0.01 0.05 μV/°C
Output Offset, V
Average Temperature Drift TA = −40°C to +125°C 0.05 0.5 μV/°C
INPUT CURRENTS
Input Bias Current 250 500 pA
T
Input Offset Current 20 100 pA
T
GAINS 1, 2, 4, 8, 16, 32, 64, 128
Gain Error
G = 1 0.05 %
G = 2 to 128 0.8 %
Gain Drift
G = 1 3 10 ppm/°C
G = 2 to 128 3 10 ppm/°C
CMRR
G = 1 80 dB
G = 2 86 dB
G = 4 92 dB
G = 8 98 dB
G = 16 104 dB
G = 32 110 dB
G = 64 110 dB
G = 128 110 dB
NOISE en = √(e
Input Voltage Noise, eni f = 1 kHz 32 nV/√Hz
f = 1 kHz, TA = −40°C 27 nV/√Hz
f = 1 kHz, TA = 125°C 39 nV/√Hz
f = 0.1 Hz to 10 Hz, 0.7 μV p-p
Output Voltage Noise, eno f = 1 kHz 58 nV/√Hz
f = 1 kHz, TA = −40°C 50 nV/√Hz
f = 1 kHz, TA = 125°C 70 nV/√Hz
f = 0.1 Hz to 10 Hz 1.1 μV p-p
OTHER INPUT CHARACTERISTICS
Common-Mode Input Impedance 10||5 GΩ||pF
Power Supply Rejection Ratio 100 110 dB
Input Operating Voltage Range 0.05 4.95 V
REFERENCE INPUT
Input Impedance
Voltage Range
= 2.5 V, G = 1, RL = 10 kΩ, TA = 25°C, unless otherwise noted.
REF
+ V
OSI
4 15 μV
OSI
15 30 μV
OSO
= −40°C to +125°C 5 nA
A
= −40°C to +125°C 0.5 nA
A
2
+ (eno/G)2), V
ni
/G
OSO
, V
IN+
= 2.5 V
IN−
28 kΩ
−0.2 +5.2 V
Rev. 0 | Page 3 of 20
AD8231
Parameter Conditions Min Typ Max Unit
DYNAMIC PERFORMANCE
Bandwidth
G = 1 2.7 MHz
G = 2 2.5 MHz
Gain Bandwidth Product
G = 4 to 128 7 MHz
Slew Rate 1.1 V/μs
OUTPUT CHARACTERISTICS
Output Voltage High RL = 100 kΩ to ground 4.9 4.94 V
R
= 10 kΩ to ground 4.8 4.88 V
L
Output Voltage Low RL = 100 kΩ to 5 V 60 100 mV
R
= 10 kΩ to 5 V 80 200 mV
L
Short-Circuit Current 70 mA
DIGITAL INTERFACE
Input Voltage Low TA = −40°C to +125°C 1.0 V
Input Voltage High TA = −40°C to +125°C 4.0 V
T
Setup Time to CS high
Hold Time after CS high
OPERATIONAL AMPLIFIER
= −40°C to +125°C 50 ns
A
T
= −40°C to +125°C 20 ns
A
INPUT CHARACTERISTICS
Offset Voltage, VOS 5 15 μV
Temperature Drift TA = −40°C to +125°C 0.01 0.06 uV/°C
Input Bias Current 250 500 pA
T
= −40°C to +125°C 5 nA
A
Input Offset Current 20 100 pA
T
= −40°C to +125°C 0.5 nA
A
Input Voltage Range 0.05 4.95 V
Open-Loop Gain 100 120 V/mV
Common-Mode Rejection Ratio 100 120 dB
Power Supply Rejection Ratio 100 115 dB
Voltage Noise Density 20 nV/√Hz
Voltage Noise f = 0.1 Hz to 10 Hz 0.4 μV p-p
DYNAMIC PERFORMANCE
Gain Bandwidth Product 1 MHz
Slew Rate 0.5 V/μs
OUTPUT CHARACTERISTICS
Output Voltage High RL = 100 kΩ to ground 4.9 4.96 V
R
= 10 kΩ to ground 4.8 4.92 V
L
Output Voltage Low RL = 100 kΩ to 5 V 60 100 mV
R
= 10 kΩ to 5 V 80 200 mV
L
Short-Circuit Current 70 mA
BOTH AMPLIFIERS
POWER SUPPLY
Quiescent Current 4 5 mA
Quiescent Current (Shutdown) 0.01 1 μA
Rev. 0 | Page 4 of 20
AD8231
VS = 3.0 V, V
Table 3.
Parameter Conditions Min Typ Max Unit
INSTRUMENTATION AMPLIFIER
OFFSET VOLTAGE VOS RTI = V
Input Offset, V
Average Temperature Drift 0.01 0.05 μV/°C
Output Offset, V
Average Temperature Drift 0.05 0.5 μV/°C
INPUT CURRENTS
Input Bias Current 250 500 pA
T
Input Offset Current 20 100 pA
T
GAINS 1, 2, 4, 8, 16, 32, 64, 128
Gain Error
G = 1 0.05 %
G = 2 to 128 0.8 %
Gain Drift
G = 1 3 10 ppm/°C
G = 2 to 128 3 10 ppm/°C
CMRR
G = 1 80 dB
G = 2 86 dB
G = 4 92 dB
G = 8 98 dB
G = 16 104 dB
G = 32 110 dB
G = 64 110 dB
G = 128 110 dB
NOISE
Input Voltage Noise, eni f = 1 kHz 40 nV/√Hz
f = 1 kHz, TA = −40°C 35 nV/√Hz
f = 1 kHz, TA = 125°C 48 nV/√Hz
f = 0.1 Hz to 10 Hz 0.8 μV p-p
Output Voltage Noise, eno f = 1 kHz 72 nV/√Hz
f = 1 kHz, TA = −40°C 62 nV/√Hz
f = 1 kHz, TA = 125°C 83 nV/√Hz
f = 0.1 Hz to 10 Hz 1.4 μV p-p
OTHER INPUT CHARACTERISTICS
Common-Mode Input Impedance 10||5 GΩ||pF
Power Supply Rejection Ratio 100 110 dB
Input Operating Voltage Range 0.05 2.95 V
REFERENCE INPUT
Input Impedance
Voltage Range
= 1.5 V, TA = 25°C, G = 1, RL = 10 kΩ, unless otherwise noted.
REF
+ V
OSI
4 15 μV
OSI
15 30 μV
OSO
= −40°C to +125°C 5 nA
A
= −40°C to +125°C 0.5 nA
A
2
= √(e
e
n
V
IN+
+ (eno/G)2)
ni
, V
= 2.5 V, TA = 25°C
IN−
/G
OSO
28 kΩ||pF
−0.2 +3.2 V
Rev. 0 | Page 5 of 20
AD8231
Parameter Conditions Min Typ Max Unit
DYNAMIC PERFORMANCE
Bandwidth
G = 1 2.7 MHz
G = 2 2.5 MHz
Gain Bandwidth Product
G = 4 to 128 7 MHz
Slew Rate 1.1 V/μs
OUTPUT CHARACTERISTICS
Output Voltage High RL = 100 kΩ to ground 2.9 2.94 V
R
Output Voltage Low RL = 100 kΩ to 3 V 60 100 mV
R
Short-Circuit Current 70 mA
DIGITAL INTERFACE
Input Voltage Low TA = −40°C to +125°C 0.7 V
Input Voltage High TA = −40°C to +125°C 2.3 V
Setup Time to CS high
Hold Time after CS high
OPERATIONAL AMPLIFIER
INPUT CHARACTERISTICS
Offset Voltage, VOS 5 15 μV
Temperature Drift TA = −40°C to +125°C 0.01 0.06 μV/°C
Input Bias Current 250 500 pA
T
Input Offset Current 20 100 pA
T
Input Voltage Range 0.05 2.95 V
Open-Loop Gain 100 120 V/mV
Common-Mode Rejection Ratio 100 120 dB
Power Supply Rejection Ratio 100 115 dB
Voltage Noise Density 27 nV/√Hz
Voltage Noise f = 0.1 Hz to 10 Hz 0.6 μV p-p
DYNAMIC PERFORMANCE
Gain Bandwidth Product 1 MHz
Slew Rate 0.5 V/μs
OUTPUT CHARACTERISTICS
Output Voltage High RL = 100 kΩ to ground 2.9 2.96 V
R
Output Voltage Low RL = 100 kΩ to 3 V 60 100 mV
R
Short-Circuit Current 70 mA
BOTH AMPLIFIERS
POWER SUPPLY
Quiescent Current 3.5 4.5 mA
Quiescent Current (Shutdown) 0.01 1 μA
= 10 kΩ to ground 2.8 2.88 V
L
= 10 kΩ to 3 V 80 200 mV
L
TA = −40°C to +125°C 60 ns
TA = −40°C to +125°C 20 ns
= −40°C to +125°C 5 nA
A
= −40°C to +125°C 0.5 nA
A
= 10 kΩ to ground 2.8 2.82 V
L
= 10 kΩ to 3 V 80 200 mV
L
Rev. 0 | Page 6 of 20
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