50 nV/°C maximum input offset drift
10 ppm/°C maximum gain drift
Excellent dc performance
80 dB minimum CMR, G = 1
15 µV maximum input offset voltage
500 pA maximum bias current
0.7 µV p-p noise (0.1 Hz to 10 Hz)
Good ac performance
2.7 MHz bandwidth, G = 1
1.1 V/s slew rate
Rail-to-rail input and output
Shutdown/multiplex
Extra op amp
Single supply range: 3 V to 6 V
Dual supply range: ±1.5 V to ±3 V
APPLICATIONS
Pressure and strain transducers
Thermocouples and RTDs
Programmable instrumentation
Industrial controls
Weigh scales
GENERAL DESCRIPTION
The AD8231 is a low drift, rail-to-rail, instrumentation amplifier with software programmable gains of 1, 2, 4, 8, 16, 32, 64, or
128. The gains are programmed via digital logic or pin
strapping.
The AD8231 is ideal for applications that require precision
performance over a wide temperature range, such as industrial
temperature sensing and data logging. Because the gain setting
resistors are internal, maximum gain drift is only 10 ppm/°C.
Because of the auto-zero input stage, maximum input offset is
15 µV and maximum input offset drift is just 50 nV/°C. CMRR
is also guaranteed over temperature at 80 dB for G = 1, increasing to 110 dB at higher gains.
Instrumentation Amplifier
AD8231
FUNCTIONAL BLOCK DIAGRAM
A216A115A014CS
13
1
NC
LOGIC
2
–INA
+IN
NC
3
4
IN-AMP
AD8231
5
SDN
OP
AMP
7
6
+INB
Figure 1.
–INB
Table 1. Instrumentation/Difference Amplifiers by Category
High
Performance
AD8221AD6231AD628AD620AD6271AD8231
1
AD8220
AD8222AD524AD8251
1
AD8224
AD624AD8556AD8557
1
Rail-to-rail output.
Low
Cost
AD85531AD629AD621AD8250
AD526AD8555
High
Voltage
Mil
Grade
The AD8231 also includes an uncommitted op amp that can be
used for additional gain, differential signal driving or filtering.
Like the in-amp, the op amp has an auto-zero architecture, railto-rail input, and rail-to-rail output.
The AD8231 includes a shutdown feature that reduces current
to a maximum of 1 µA. In shutdown, both amplifiers also have
a high output impedance. This allows easy multiplexing of
multiple amplifiers without additional switches.
The AD8231 is specified over the extended industrial temperature range of −40°C to +125°C. It is available in a 4 mm × 4 mm
16-lead LFCSP (chip scale).
12
+V
S
11
–V
S
10
OUTA
9
REF
8
OUTB
Low
Power
06586-001
Digital
Gain
1
1
1
1
Rev. 0
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Anal og Devices for its use, nor for any infringements of patents or ot her
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
Parameter Conditions Min Typ Max Unit
INSTRUMENTATION AMPLIFIER
OFFSET VOLTAGE VOS RTI = V
Input Offset, V
Average Temperature Drift TA = −40°C to +125°C 0.01 0.05 μV/°C
Output Offset, V
Average Temperature Drift TA = −40°C to +125°C 0.05 0.5 μV/°C
INPUT CURRENTS
Input Bias Current 250 500 pA
T
Input Offset Current 20 100 pA
T
GAINS 1, 2, 4, 8, 16, 32, 64, 128
Gain Error
G = 1 0.05 %
G = 2 to 128 0.8 %
Gain Drift
G = 1 3 10 ppm/°C
G = 2 to 128 3 10 ppm/°C
CMRR
G = 1 80 dB
G = 2 86 dB
G = 4 92 dB
G = 8 98 dB
G = 16 104 dB
G = 32 110 dB
G = 64 110 dB
G = 128 110 dB
NOISE en = √(e
Input Voltage Noise, eni f = 1 kHz 32 nV/√Hz
f = 1 kHz, TA = −40°C 27 nV/√Hz
f = 1 kHz, TA = 125°C 39 nV/√Hz
f = 0.1 Hz to 10 Hz, 0.7 μV p-p
Output Voltage Noise, eno f = 1 kHz 58 nV/√Hz
f = 1 kHz, TA = −40°C 50 nV/√Hz
f = 1 kHz, TA = 125°C 70 nV/√Hz
f = 0.1 Hz to 10 Hz 1.1 μV p-p
OTHER INPUT CHARACTERISTICS
Common-Mode Input Impedance 10||5 GΩ||pF
Power Supply Rejection Ratio 100 110 dB
Input Operating Voltage Range 0.05 4.95 V
REFERENCE INPUT
Input Impedance
Voltage Range
= 2.5 V, G = 1, RL = 10 kΩ, TA = 25°C, unless otherwise noted.
REF
+ V
OSI
4 15 μV
OSI
15 30 μV
OSO
= −40°C to +125°C 5 nA
A
= −40°C to +125°C 0.5 nA
A
2
+ (eno/G)2), V
ni
/G
OSO
, V
IN+
= 2.5 V
IN−
28 kΩ
−0.2 +5.2 V
Rev. 0 | Page 3 of 20
AD8231
Parameter Conditions Min Typ Max Unit
DYNAMIC PERFORMANCE
Bandwidth
G = 1 2.7 MHz
G = 2 2.5 MHz
Gain Bandwidth Product
G = 4 to 128 7 MHz
Slew Rate 1.1 V/μs
OUTPUT CHARACTERISTICS
Output Voltage High RL = 100 kΩ to ground 4.9 4.94 V
R
= 10 kΩ to ground 4.8 4.88 V
L
Output Voltage Low RL = 100 kΩ to 5 V 60 100 mV
R
= 10 kΩ to 5 V 80 200 mV
L
Short-Circuit Current 70 mA
DIGITAL INTERFACE
Input Voltage Low TA = −40°C to +125°C 1.0 V
Input Voltage High TA = −40°C to +125°C 4.0 V
T
Setup Time to CS high
Hold Time after CS high
OPERATIONAL AMPLIFIER
= −40°C to +125°C 50 ns
A
T
= −40°C to +125°C 20 ns
A
INPUT CHARACTERISTICS
Offset Voltage, VOS 5 15 μV
Temperature Drift TA = −40°C to +125°C 0.01 0.06 uV/°C
Input Bias Current 250 500 pA
T
= −40°C to +125°C 5 nA
A
Input Offset Current 20 100 pA
T
= −40°C to +125°C 0.5 nA
A
Input Voltage Range 0.05 4.95 V
Open-Loop Gain 100 120 V/mV
Common-Mode Rejection Ratio 100 120 dB
Power Supply Rejection Ratio 100 115 dB
Voltage Noise Density 20 nV/√Hz
Voltage Noise f = 0.1 Hz to 10 Hz 0.4 μV p-p
DYNAMIC PERFORMANCE
Gain Bandwidth Product 1 MHz
Slew Rate 0.5 V/μs
OUTPUT CHARACTERISTICS
Output Voltage High RL = 100 kΩ to ground 4.9 4.96 V
R
= 10 kΩ to ground 4.8 4.92 V
L
Output Voltage Low RL = 100 kΩ to 5 V 60 100 mV
R
= 10 kΩ to 5 V 80 200 mV
L
Short-Circuit Current 70 mA
BOTH AMPLIFIERS
POWER SUPPLY
Quiescent Current 4 5 mA
Quiescent Current (Shutdown) 0.01 1 μA
Rev. 0 | Page 4 of 20
AD8231
VS = 3.0 V, V
Table 3.
Parameter Conditions Min Typ Max Unit
INSTRUMENTATION AMPLIFIER
OFFSET VOLTAGE VOS RTI = V
Input Offset, V
Average Temperature Drift 0.01 0.05 μV/°C
Output Offset, V
Average Temperature Drift 0.05 0.5 μV/°C
INPUT CURRENTS
Input Bias Current 250 500 pA
T
Input Offset Current 20 100 pA
T
GAINS 1, 2, 4, 8, 16, 32, 64, 128
Gain Error
G = 1 0.05 %
G = 2 to 128 0.8 %
Gain Drift
G = 1 3 10 ppm/°C
G = 2 to 128 3 10 ppm/°C
CMRR
G = 1 80 dB
G = 2 86 dB
G = 4 92 dB
G = 8 98 dB
G = 16 104 dB
G = 32 110 dB
G = 64 110 dB
G = 128 110 dB
NOISE
Input Voltage Noise, eni f = 1 kHz 40 nV/√Hz
f = 1 kHz, TA = −40°C 35 nV/√Hz
f = 1 kHz, TA = 125°C 48 nV/√Hz
f = 0.1 Hz to 10 Hz 0.8 μV p-p
Output Voltage Noise, eno f = 1 kHz 72 nV/√Hz
f = 1 kHz, TA = −40°C 62 nV/√Hz
f = 1 kHz, TA = 125°C 83 nV/√Hz
f = 0.1 Hz to 10 Hz 1.4 μV p-p
OTHER INPUT CHARACTERISTICS
Common-Mode Input Impedance 10||5 GΩ||pF
Power Supply Rejection Ratio 100 110 dB
Input Operating Voltage Range 0.05 2.95 V
REFERENCE INPUT
Input Impedance
Voltage Range
= 1.5 V, TA = 25°C, G = 1, RL = 10 kΩ, unless otherwise noted.
REF
+ V
OSI
4 15 μV
OSI
15 30 μV
OSO
= −40°C to +125°C 5 nA
A
= −40°C to +125°C 0.5 nA
A
2
= √(e
e
n
V
IN+
+ (eno/G)2)
ni
, V
= 2.5 V, TA = 25°C
IN−
/G
OSO
28 kΩ||pF
−0.2 +3.2 V
Rev. 0 | Page 5 of 20
AD8231
Parameter Conditions Min Typ Max Unit
DYNAMIC PERFORMANCE
Bandwidth
G = 1 2.7 MHz
G = 2 2.5 MHz
Gain Bandwidth Product
G = 4 to 128 7 MHz
Slew Rate 1.1 V/μs
OUTPUT CHARACTERISTICS
Output Voltage High RL = 100 kΩ to ground 2.9 2.94 V
R
Output Voltage Low RL = 100 kΩ to 3 V 60 100 mV
R
Short-Circuit Current 70 mA
DIGITAL INTERFACE
Input Voltage Low TA = −40°C to +125°C 0.7 V
Input Voltage High TA = −40°C to +125°C 2.3 V
Setup Time to CS high
Hold Time after CS high
OPERATIONAL AMPLIFIER
INPUT CHARACTERISTICS
Offset Voltage, VOS 5 15 μV
Temperature Drift TA = −40°C to +125°C 0.01 0.06 μV/°C
Input Bias Current 250 500 pA
T
Input Offset Current 20 100 pA
T
Input Voltage Range 0.05 2.95 V
Open-Loop Gain 100 120 V/mV
Common-Mode Rejection Ratio 100 120 dB
Power Supply Rejection Ratio 100 115 dB
Voltage Noise Density 27 nV/√Hz
Voltage Noise f = 0.1 Hz to 10 Hz 0.6 μV p-p
DYNAMIC PERFORMANCE
Gain Bandwidth Product 1 MHz
Slew Rate 0.5 V/μs
OUTPUT CHARACTERISTICS
Output Voltage High RL = 100 kΩ to ground 2.9 2.96 V
R
Output Voltage Low RL = 100 kΩ to 3 V 60 100 mV
R
Short-Circuit Current 70 mA
BOTH AMPLIFIERS
POWER SUPPLY
Quiescent Current 3.5 4.5 mA
Quiescent Current (Shutdown) 0.01 1 μA
= 10 kΩ to ground 2.8 2.88 V
L
= 10 kΩ to 3 V 80 200 mV
L
TA = −40°C to +125°C 60 ns
TA = −40°C to +125°C 20 ns
= −40°C to +125°C 5 nA
A
= −40°C to +125°C 0.5 nA
A
= 10 kΩ to ground 2.8 2.82 V
L
= 10 kΩ to 3 V 80 200 mV
L
Rev. 0 | Page 6 of 20
AD8231
ABSOLUTE MAXIMUM RATINGS
Table 4.
Parameter Rating
Supply Voltage 6 V
Output Short-Circuit Current Indefinite1
Input Voltage (Common-Mode) −VS − 0.3 V to +VS + 0.3 V
Differential Input Voltage −VS − 0.3 V to +VS + 0.3 V
Storage Temperature Range –65°C to +150°C
Operational Temperature Range –40°C to +125°C
Package Glass Transition Temperature 130°C
ESD (Human Body Model) 1.5 kV
ESD (Charged Device Model) 1.5 kV
ESD (Machine Model) 0.2 kV
1
For junction temperatures between 105°C and 130°C, short-circuit operation
beyond 1000 hours may impact part reliability.
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
THERMAL RESISTANCE
Table 5.
Thermal Pad θJA Unit
Soldered to Board 54 °C/W
Not Soldered to Board 96 °C/W
The θJA values in Tabl e 5 assume a 4-layer JEDEC standard
board. If the thermal pad is soldered to the board, then it is
also assumed it is connected to a plane. θ
at the exposed pad
JC
is 6.3°C/W.
Maximum Power Dissipation
The maximum safe power dissipation for the AD8231 is limited
by the associated rise in junction temperature (T
) on the die. At
J
approximately 130°C, which is the glass transition temperature,
the plastic changes its properties. Even temporarily exceeding
this temperature limit may change the stresses that the package
exerts on the die, permanently shifting the parametric performance of the amplifiers. Exceeding a temperature of 130°C for an
extended period can result in a loss of functionality.
ESD CAUTION
Rev. 0 | Page 7 of 20
AD8231
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
S
A1
A2
A0
C
14
13
15
16
PIN 1
1NC
2(IN-AMP –IN) –INA
3(IN-AMP +IN) +INA
4NC
INDICATO R
AD8231
TOP VIEW
(Not to Scale)
12 +V
S
11 –V
S
10 OUTA (IN-AMP OUT)
9REF
NC = NO CONNECT
8
7
5
6
SDN
–INB
+INB
(OP AMP OUT) OUTB
06586-002
Figure 2. 16-Lead LFCSP (Chip Scale)
Table 6. Pin Function Descriptions
Pin Number Mnemonic Description
1 NC No Connect.
2 −INA In-Amp Negative Input.
3 +INA In-Amp Positive Input.
4 NC No Connect.
5
SDN
Shutdown.
6 +INB Op Amp Positive Input.
7 −INB Op Amp Negative Input.
8 OUTB Op Amp Output.
9 REF
In-Amp Reference Pin. It should be driven with a low impedance. Output is referred to
this pin.
10 OUTA In-Amp Output.
11 −VS Negative Power Supply. Connect to ground in single supply applications.
12 +VS Positive Power Supply.
13
CS
Chip Select. Enables digital logic interface.
14 A0 Gain Setting Bit (LSB).
15 A1 Gain Setting Bit.
16 A2 Gain Setting Bit (MSB).
Rev. 0 | Page 8 of 20
AD8231
TYPICAL PERFORMANCE CHARACTERISTICS
INSTRUMENTATION AMPLIFIER PERFORMANCE CURVES
6
0V, 4.96V
5
4
INPUT COMMO N-MODE VOL TAGE (V)
3
2
1
0
0654321
5V SINGLE SUPPLY
0V, 2.96V
3V SINGLE SUPPLY
0V, 0.04V
2.92V, 1.5V
OUTPUT VOLTAGE (V)
4.92V, 2.5V
Figure 3. Input Common-Mode Range vs. Output Voltage, V
REF
= 0 V
06586-003
50
40
30
20
10
0
GAIN (dB)
–10
–20
–30
–40
10010M1M100k10k1k
G = +128
G = +64
G = +32
G = +16
G = +8
G = +4
G = +2
G = +1
FREQUENCY (Hz)
Figure 6. Gain vs. Frequency
06586-009
6
5
0.02V, 4.22V
4
3
0.02V, 2.22V
2
1
0.02V, 0.78V
INPUT COMMON-MODE VOLTAGE (V)
0
05
Figure 4. Input Common-Mode Range vs. Output Voltage, V
6
5
4
0.02V, 3.72V
3
2
0.02V, 1.72V
1
INPUT COMMO N-MODE VOL TAGE (V)
0.02V, 1.28V
0
054.54.03.53.02.52.01.51.00.5
Figure 5. Input Common-Mode Range vs. Output Voltage, V
1.5V, 4.96V
5V SINGLE SUPPLY
1.5V, 2.96V
2.98V, 2.22V
3V SINGLE SUPPLY
2.98V, 0.78V
1.5V, 0.04V
OUTPUT VOLTAGE (V)
2.5V, 4.96V
5V SINGLE SUPPLY
2.5V, 2.96V
3V SINGL E
SUPPLY
2.5V, 0.04V
OUTPUT VOLTAGE (V)
2.98V, 2.72V
2.98V, 0.28V
4.98V, 3.22V
4.98V, 1.78V
REF
4.98V, 3.72V
4.98V,1.28V
REF
.04.54.03.53.02.52.01.51.00.5
06586-004
= 1.5 V
.0
06586-005
= 2.5 V
140
120
100
CMRR (dB)
80
60
40
101001k10k100k
G = +128
G = +8
G = +1
FREQUENCY (Hz)
Figure 7. CMRR vs. Frequency
G = +128, 0.4µV/DIV
G = +1, 1µV/DIV
Figure 8. 0.1 Hz to 10 Hz Noise
1s/DIV
06586-010
06586-012
Rev. 0 | Page 9 of 20
AD8231
100
G = +1
G = +8
90
G = +128
80
70
60
50
40
NOISE (nV/ Hz)
30
20
10
0
1101001k
FREQUENCY (Hz)
06586-011
Figure 9. Voltage Noise Spectral Density vs. Frequency, 5 V, 1 Hz to 1000 Hz
1.0
0.8
0.6
0.4
0.2
0
–0.2
BIAS CURRENT (nA)
–0.4
–0.6
–0.8
–1.0
–1.51.51.20.90.60.30–0.3–0.6–0.9–1.2
VCM (V)
Figure 12. Bias Current vs. Common-Mode Voltage, 3 V
+VS = +1.5V
–V
= –1.5V
S
V
= 0V
REF
06586-007
1000
NOISE (nV/ Hz)
G = +1
G = +8
900
G = +128
800
700
600
500
400
300
200
100
0
1101001 k10k100k
FREQUENCY (Hz)
06586-008
Figure 10. Voltage Noise Spectral Density vs. Frequency, 5V, 1 Hz to 1 MHz
2.0
1.5
1.0
0.5
0
–0.5
BIAS CURRENT (nA)
–1.0
–1.5
–2.0
–2.52.52.01.51.00.50–0.5–1.0–1.5–2.0
VCM (V)
+VS = +2.5V
–V
= –2.5V
S
V
= 0V
REF
06586-006
Figure 11. Bias Current vs. Common-Mode Voltage, 5 V
5µs/DIV20mV/DIV
06586-013
Figure 13. Small Signal Pulse Response, G = 1, R
500pF
NO
LOAD
300pF
800pF
= 2 kΩ, CL = 500 pF
L
4µs/DIV20mV/DIV
06586-014
Figure 14. Small Signal Pulse Response for Various Capacitive Loads, G = 1
Rev. 0 | Page 10 of 20
AD8231
G = +8
G = +32
G = +128
2V/DIV
17.6µs TO 0. 01%
21.4µs TO 0.001%
Figure 15. Small Signal Pulse Response, G = 8, 32, 128, R
2V/DIV
3.95µs TO 0. 01%
4µs TO 0. 001%
Figure 16. Large Signal Pulse Response, G = 1, V
2V/DIV
10µs/DIV20mV/DIV
= 2 kΩ, CL = 500 pF
L
10µs/DIV0.001%/DIV
= 5 V
S
06586-015
06586-016
Figure 18. Large Signal Pulse Response, G = 128, V
25
20
0.001%
15
10
SETTLING TIME (µs)
5
0
1110010
GAIN (V/V)
Figure 19. Settling Time vs. Gain for a 4 V p-p Step, V
25
20
15
0.01%
0.001%
0.01%
100µs/DIV0.001%/DIV
06586-018
= 5 V
S
k
06586-019
= 5 V
S
3.75µs TO 0.01%
3.8µs TO 0.001%
10µs/DIV0.001%/DIV
Figure 17. Large Signal Pulse Response, G = 8, V
= 5 V
S
06586-017
Rev. 0 | Page 11 of 20
10
SETTLING TIME (µs)
5
0
1110010
GAIN (V/V)
Figure 20. Settling Time vs. Gain for a 2 V p-p Step, V
k
06586-020
= 3 V
S
AD8231
–
–
OPERATIONAL AMPLIFIER PERFORMANCE CURVES
100
80
90
–100
NO
LOAD
60
40
20
OPEN-LOOP GAIN (dB)
0
RL = 10kΩ
= 200pF
C
L
–20
1010M1M100k10k1k100
FREQUENCY (Hz)
Figure 21. Open Loop Gain and Phase vs. Frequency, V
100
80
60
40
20
OPEN-LOOP GAIN (dB)
0
RL = 10kΩ
= 200pF
C
L
–20
1010M1M100k10k1k100
FREQUENCY (Hz)
Figure 22. Open Loop Gain and Phase vs. Frequency, V
76° PHASE
MARGIN
72° PHASE
MARGIN
= 5 V
S
= 3 V
S
–110
–120
–130
–140
–150
90
–100
–110
–120
–130
–140
–150
300pF
800pF
1nF
OPEN-LOOP PHASE SHIFT (Degrees)
06586-021
Figure 24. Small Signal Response for Various Capacitive Loads, V
NO
LOAD
OUTPUT VOLTAGE (0.5V/DIV)
OPEN-LOOP PHASE SHIFT (Degrees)
06586-022
Figure 25. Large Signal Transient Response, V
1.5nF
1nF║2kΩ
1.5nF║2kΩ
TIME (5µs/DIV)
5µs/DIV20mV/DIV
= 5 V
S
06586-024
= 3 V
S
06586-025
NO
LOAD
1nF║2kΩ
1.5nF║2kΩ
OUTPUT VOLTAGE (0.5V/DIV)
TIME (5µs/DIV)
Figure 26. Large Signal Transient Response, V
= 3 V
S
06586-026
NO
LOAD
800pF
1nF
2nF
1.5nF
5µs/DIV20mV/DIV
Figure 23. Small Signal Response for Various Capacitive Loads, V
06586-023
= 5 V
S
Rev. 0 | Page 12 of 20
AD8231
PERFORMANCE CURVES VALID FOR BOTH AMPLIFIERS
7
6
5
4
(mA)
3
SUPPLY
I
2
1
+125°C
+85°C
+25°C
–40°C
5
4
–40°C SOURCE
+25°C SOURCE
+85°C SOURCE
3
+125°C SOURCE
–40°C SINK
+25°C SINK
2
OUTPUT VO LTAGE (V )
+85°C SINK
+125°C SINK
1
0
2.75.95.55.14.74. 33.93.53.1
V
SUPPLY
Figure 27. Supply Current vs. Supply Voltage
3.0
2.5
2.0
1.5
1.0
OUTPUT VO LTAGE (V )
0.5
–40°C SOURCE
+25°C SOURCE
+85°C SOURCE
+125°C SOURCE
–40°C SINK
+25°C SINK
+85°C SINK
+125°C SINK
0
022015105
OUTPUT CURRENT (mA)
Figure 28. Output voltage Swing vs. Output Current, V
(V)
0
022015105
06586-028
Figure 29. Output Voltage Swing vs. Output Current, V
5
06586-029
= 3 V
S
OUTPUT CURRENT (mA)
5
06586-030
= 5 V
S
Rev. 0 | Page 13 of 20
AD8231
THEORY OF OPERATION
CS A0 A1 A2SDN
OUTB
–INA
A1
14kΩ14kΩ
A4
A3
–INB
+INB
OUTA
+INA
A2
+V
S
Figure 30. Simplified Schematic
AMPLIFIER ARCHITECTURE
The AD8231 is based on the classic 3-op amp topology. This
topology has two stages: a preamplifier to provide amplification,
followed by a difference amplifier to remove the common-mode
voltage.
Figure 30 shows a simplified schematic of the AD8231.
The preamp stage is composed of Amplifier A1, Amplifier A2,
and a digitally controlled resistor network. The second stage is a
gain of 1 difference amplifier composed of A3 and four 14 k
resistors. Amplifier A1, Amplifier A2, and Amplifier A3 are all
zero drift, rail-to-rail input, rail-to rail-output amplifiers.
The AD8231 design makes it extremely robust over temperature. The AD8231 uses an internal thin film resistor to set the
gain. Since all of the resistors are on the same die, gain
temperature drift performance and CMRR drift performance
are better than can be achieved with topologies using external
resistors. The AD8231 also uses an auto-zero topology to null
the offsets of all its internal amplifiers. Since this topology
continually corrects for any offset errors, offset temperature
drift is nearly nonexistent.
The AD8231 also includes a free operational amplifier. Like
the other amplifiers in the AD8231, it is a zero drift, rail-to-rail
input, rail-to-rail output architecture.
GAIN SELECTION
The AD8231’s gain is set by voltages applied to the A0, A1,
and A2 pins. To change the gain, the
low. When the
CS
pin is driven high, the gain is latched, and
voltages at the A0 to A2 pins have no effect.
different gain settings.
The time required for a gain change is dominated by the settling
time of the amplifier. The AD8231 takes about 200 ns to switch
gains, after which the amplifier begins to settle. Refer to
through
Figure 20 to determine the settling time for different
gains.
CS
pin must be driven
Tabl e 7 shows the
Figure 16
14kΩ14kΩ
AD8231
S
REF–V
6586-031
Table 7. Truth Table for AD8231 Gain Settings
A2 A1 A0 Gain
CS
Low Low Low Low 1
Low Low Low High 2
Low Low High Low 4
Low Low High High 8
Low High Low Low 16
Low High Low High 32
Low High High Low 64
Low High High High 128
High X X X No change
REFERENCE TERMINAL
The output voltage of the AD8231 is developed with respect to
the potential on the reference terminal. This is useful when the
output signal needs to be offset to a midsupply level. For
example, a voltage source can be tied to the REF pin to levelshift the output so that the AD8231 can drive a single-supply
ADC. The REF pin is protected with ESD diodes and should
not exceed either +V
For best performance, source impedance to the REF terminal
should be kept below 1 Ω. As shown in
terminal, REF, is at one end of a 14 k resistor. Additional
impedance at the REF terminal adds to this 14 k resistor
and results in amplification of the signal connected to the
positive input, causing a CMRR error.
or −VS by more than 0.3 V.
S
Figure 30, the reference
Rev. 0 | Page 14 of 20
AD8231
V
INCORRECT
AD8231
IN-AMP
REF
V
REF
CORRECT
+
AD8231
OP AMP
–
AD8231
IN-AMP
06586-032
Figure 31. Driving the Reference Pin
LAYOUT
The AD8231 is a high precision device. To ensure optimum
performance at the PC board level, care must be taken in the
design of the board layout. The AD8231 pinout is arranged in
a logical manner to aid in this task.
Power Supplies
The AD8231 should be decoupled with a 0.1 µF bypass capacitor
between the two supplies. This capacitor should be placed as close
as possible to Pin 11 and Pin 12, either directly next to the pins or
beneath the pins on the backside of the board. The AD8231’s autozero architecture requires a low ac impedance between the supplies.
Long trace lengths to the bypass capacitor increase this impedance,
which results in a larger input offset voltage.
A stable dc voltage should be used to power the instrumentation
amplifier. Noise on the supply pins can adversely affect
performance.
Package Considerations
The AD8231 comes in a 4 mm × 4 mm LFCSP. Beware of
blindly copying the footprint from another 4 mm × 4 mm
LFCSP part; it may not have the same thermal pad size and
leads. Refer to the
PCB symbol has the correct dimensions. Space between the
leads and thermal pad should be kept as wide as possible for the
best bias current performance.
Thermal Pad
The AD8231 4 mm × 4 mm LFCSP comes with a thermal pad.
This pad is connected internally to −V
left unconnected or connected to the negative supply rail. For
high vibration applications, a landing is recommended.
Because the AD8231 dissipates little power, heat dissipation is
rarely an issue. If improved heat dissipation is desired (for
example, when ambient temperatures are near 125°C or when
driving heavy loads), connect the thermal pad to the negative
supply rail. For the best heat dissipation performance, the
negative supply rail should be a plane in the board. See the
Thermal Resistance section for thermal coefficients with and
without the pad soldered.
Outline Dimensions section to verify that the
. The pad can either be
S
INPUT BIAS CURRENT RETURN PATH
The input bias current of the AD8231 must have a return path
to common. When the source, such as a thermocouple, cannot
provide a return current path, one should be created, as shown
in
Figure 32.
INCORRECT
+V
S
AD8231
REF
–V
S
TRANSFORMER
+V
S
AD8231
REF
–V
S
THERMOCOUPL E
+V
S
C
AD8231
C
CAPACITIVELY COUPLED
REF
–V
S
Figure 32. Creating an I
f
HIGH-PASS
10MΩ
1
=
2πRC
CAPACITIVEL Y COUPLED
TRANSFORMER
THERMOCOUPL E
C
R
C
R
Path
BIAS
CORRECT
+V
S
AD8231
–V
S
+V
S
AD8231
–V
S
+V
S
AD8231
–V
S
REF
REF
REF
RF INTERFERENCE
RF rectification is often a problem when amplifiers are used in
applications where there are strong RF signals. The disturbance
can appear as a small dc offset voltage. High frequency signals
can be filtered with a low-pass, RC network placed at the input
of the instrumentation amplifier, as shown in
filter limits the input signal bandwidth according to the
following relationship:
FilterFreq
FilterFreqπ=
C
where
≥ 10CC.
D
Diff
CM
=
1
D
1
RC
2
C
)(22
CCR
+π
C
Figure 33. The
6586-033
Rev. 0 | Page 15 of 20
AD8231
V
C
C
1nF
R
4.02kΩ
4.02kΩ
C
D
10nF
R
C
C
1nF
0.1µF
+INA
–INA
0.1µF
+
S
AD8231
–V
S
REF
10µF
10µF
V
OUT
06586-034
Figure 33. RFI Suppression
Figure 33 shows an example where the differential filter
frequency is approximately 2 kHz, and the common-mode filter
frequency is approximately 40 kHz.
Val u es of R an d C
between the R × C
should be chosen to minimize RFI. Mismatch
C
at the positive input and the R × CC at
C
negative input degrades the CMRR of the AD8231. By using a
value of C
ten times larger than the value of CC, the effect of
D
the mismatch is reduced and performance is improved.
COMMON-MODE INPUT VOLTAGE RANGE
The 3-op amp architecture of the AD8231 applies gain and then
removes the common-mode voltage. Therefore, internal nodes
in the AD8231 experience a combination of both the gained
signal and the common-mode signal. This combined signal can
be limited by the voltage supplies even when the individual input
and output signals are not. To determine whether the signal could
be limited, refer to
formula:
If more common mode range is required, the simplest solution is to
apply less gain in the instrumentation amplifier. The extra op amp
can be used to provide another gain stage after the in-amp. Because
the AD8231 has good offset and noise performance at low gains,
applying less gain in the instrumentation amplifier generally has a
limited impact on the overall system performance.
Figure 3 through Figure 5 or use the following
×
GainV
V04.0−+<
VV
DIFF
±<+−
CMS
2
V
S
V04.0
Rev. 0 | Page 16 of 20
AD8231
APPLICATIONS INFORMATION
DIFFERENTIAL OUTPUT
Figure 34 shows how to create a differential output in-amp
using the AD8231 uncommitted op amp. Errors from the op
amp are common to both outputs and are thus common-mode.
Errors from mismatched resistors also create a common-mode
dc offset. Because these errors are common-mode, they will
likely be rejected by the next device in the signal chain.
3
+IN
IN-AMP
2
–IN
Figure 34. Differential Output Using Op Amp
REF
9
4.99kΩ
4.99kΩ
10
76
–
OP AMP
+OUT
V
REF
+
8
–OUT
06586-035
MULTIPLEXING
SDN0
SDN1
SDN2
SDN3
06586-036
Figure 35.
The outputs of both the AD8231 in-amp and op amp are high
impedance in the shutdown state. This feature allows several
AD8231s to be multiplexed together without any external
switches.
Figure 35 shows an example of such a configuration.
All the outputs are connected together and only one amplifier is
turned on at a time. This feature is analogous to the high Z
mode of digital tristate logic. Because the output impedance in
shutdown is multiple megaohms, several thousand AD8231s
can theoretically be multiplexed in such a way.
The AD8231 can enter and leave shutdown mode very quickly.
However, when the amplifier wakes up and reconnects its input
circuitry, the voltage at its internal input nodes changes dramatically. It will take time for the output of the amplifier to settle.
Refer to
Figure 16 through Figure 20 to determine the settling
time for different gains. This settling time limits how quickly
the user can multiplex the AD8231 with the
SDN
pin.
Rev. 0 | Page 17 of 20
AD8231
OUTLINE DIMENSIONS
PIN 1
INDICATOR
1.00
0.85
0.80
12° MAX
SEATING
PLANE
4.00
BSC SQ
TOP
VIEW
0.80 MAX
0.65 TYP
0.35
0.30
0.25
3.75
BSC SQ
0.20 REF
0.60 MAX
0.65 BSC
0.05 MAX
0.02 NOM
COPLANARITY
0.75
0.60
0.50
0.08
0.60 MAX
(BOTTOM VIEW)
13
12
9
8
16
1
4
5
1.95 BSC
PIN 1
INDICATOR
5
2
.
2
S
0
1
.
2
9
.
1
5
0.25 MIN
Q
COMPLIANT TO JEDEC STANDARDS MO-220-VGG C
021207-A
Figure 36. 16-Lead Lead Frame Chip Scale Package [LFCSP_VQ]
4 mm × 4 mm Body, Very Thin Quad
(CP-16-4)
Dimensions shown in millimeters
ORDERING GUIDE
Model Temperature Range Package Description Package Option
AD8231ACPZ-R7
AD8231ACPZ-RL
AD8231ACPZ-WP
1
Z = RoHS Compliant Part.
1
1
1
−40°C to +125°C 16-Lead LFCSP_VQ, 7” Tape and Reel CP-16-4
−40°C to +125°C 16-Lead LFCSP_VQ, 13” Tape and Reel CP-16-4
−40°C to +125°C 16-Lead LFCSP_VQ, Waffle Pack CP-16-4