Output swings rail-to-rail
Input voltage range extends below ground
Single-supply capability from 3 V to 36 V
High load drive
Capacitive load drive of 500 pF, G = +1
Output current of 15 mA, 0.5 V from supplies
Excellent ac performance on 2.6 mA/amplifier
−3 dB bandwidth of 16 MHz, G = +1
350 ns settling time to 0.01% (2 V step)
Slew rate of 22 V/μs
Good dc performance
800 μV maximum input offset voltage
2 μV/°C offset voltage drift
25 pA maximum input bias current
Low distortion: −108 dBc worst harmonic @ 20 kHz
Low noise: 16 nV/√Hz @ 10 kHz
No phase inversion with inputs to the supply rails
APPLICATIONS
Battery-powered precision instrumentation
Photodiode preamps
Active filters
12-bit to 16-bit data acquisition systems
Medical instrumentation
GENERAL DESCRIPTION
The AD823 is a dual precision, 16 MHz, JFET input op amp
that can operate from a single supply of 3.0 V to 36 V or from
dual supplies of ±1.5 V to ±18 V. It has true single-supply
capability with an input voltage range extending below ground
in single-supply mode. Output voltage swing extends to within
50 mV of each rail for I
output dynamic range.
An offset voltage of 800 µV maximum, an offset voltage drift of
2 µV/°C,
input bias currents below 25 pA, and low input voltage
noise provide dc precision with source impedances up to a
Gigaohm. It provides 16 MHz, −3 dB bandwidth, −108 dB THD
@ 20 kHz, and a 22 V/µs slew rate with a low supply current of
2.6 mA per amplifier. The AD823 drives up to 500 pF of direct
capacitive load as a follower and provides an output current of
15 mA, 0.5 V from the supply rails. This allows the amplifier to
handle a wide range of load conditions.
≤ 100 µA, providing outstanding
OUT
FET Input Amplifier
AD823
CONNECTION DIAGRAM
1
OUT1
–IN1
2
3
+IN1
–V
4
S
AD823
Figure 1. 8-Lead PDIP and SOIC
3V
GND
500mV200µs
Figure 2. Output Swing, +V
2
+VS = +5V
G = +1
1
0
–1
–2
–3
–4
OUTPUT (d B)
–5
–6
–7
–8
1k
10k100k1M
FREQUENCY ( Hz)
Figure 3. Small Signal Bandwidth,
This combination of ac and dc performance, plus the outstanding
load drive capability, results in an exceptionally versatile amplifier for applications such as A/D drivers, high speed active
filters, and other low voltage, high dynamic range systems.
The AD823 is available over the industrial temperature range of
−40°C t
o +85°C and is offered in both 8-lead PDIP and 8-lead
SOIC packages.
8
+V
S
OUT2
7
–IN2
6
+IN2
5
= +3 V, G = +1
S
00901-001
G = +1
RL = 100kΩ
C
= 50pF
L
+V
= +3V
S
G = +1
10M
00901-002
00901-003
Rev. B
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Anal og Devices for its use, nor for any infringements of patents or ot her
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
At TA = 25°C, +VS = +5 V, RL = 2 kΩ to 2.5 V, unless otherwise noted.
Table 1.
Parameter Conditions Min Typ Max Unit
DYNAMIC PERFORMANCE
−3 dB Bandwidth, VO ≤ 0.2 V p-p G = +1 12 16 MHz
Full Power Response VO = 2 V p-p 3.5 MHz
Slew Rate G = −1, VO = 4 V Step 14 22 V/μs
Settling Time
to 0.1% G = −1, VO = 2 V Step 320 ns
to 0.01% G = −1, VO = 2 V Step 350 ns
NOISE/DISTORTION PERFORMANCE
Input Voltage Noise f = 10 kHz 16 nV/√Hz
Input Current Noise f = 1 kHz 1 fA/√Hz
Harmonic Distortion RL = 600 Ω to 2.5 V, VO = 2 V p-p, f = 20 kHz −108 dBc
Crosstalk
f = 1 kHz RL = 5 kΩ −105 dB
f = 1 MHz RL = 5 kΩ −63 dB
DC PERFORMANCE
Initial Offset 0.2 0.8 mV
Maximum Offset Over temperature 0.3 2.0 mV
Offset Drift 2 μV/°C
Input Bias Current VCM = 0 V to 4 V 3 25 pA
at T
VCM = 0 V to 4 V 0.5 5 nA
MAX
Input Offset Current 2 20 pA
at T
0.5 nA
MAX
Open-Loop Gain VO = 0.2 V to 4 V, RL = 2 kΩ 20 45 V/mV
T
to T
MIN
INPUT CHARACTERISTICS
Input Common-Mode Voltage Range −0.2 to +3 −0.2 to +3.8 V
Input Resistance 1013 Ω
Input Capacitance 1.8 pF
Common-Mode Rejection Ratio VCM = 0 V to 3 V 60 76 dB
OUTPUT CHARACTERISTICS
Output Voltage Swing
IL = ±100 μA 0.025 to 4.975 V
IL = ±2 mA 0.08 to 4.92 V
IL = ±10 mA 0.25 to 4.75 V
Output Current V
Short-Circuit Current Sourcing to 2.5 V 40 mA
Sinking to 2.5 V 30 mA
Capacitive Load Drive G = +1 500 pF
POWER SUPPLY
Operating Range 3 36 V
Quiescent Current T
Power Supply Rejection Ratio VS = 5 V to 15 V, T
20 V/mV
MAX
= 0.5 V to 4.5 V 16 mA
OUT
to T
MIN
, total 5.2 5.6 mA
MAX
to T
MIN
70 80 dB
MAX
Rev. B | Page 3 of 20
AD823
www.BDTIC.com/ADI
At TA = 25°C, +VS = +3.3 V, RL = 2 kΩ to 1.65 V, unless otherwise noted.
Table 2.
Parameter Conditions Min Typ Max Unit
DYNAMIC PERFORMANCE
−3 dB Bandwidth, VO ≤ 0.2 V p-p G = +1 12 15 MHz
Full Power Response VO = 2 V p-p 3.2 MHz
Slew Rate G = −1, VO = 2 V Step 13 20 V/μs
Settling Time
to 0.1% G = −1, VO = 2 V Step 250 ns
to 0.01% G = −1, VO = 2 V Step 300 ns
NOISE/DISTORTION PERFORMANCE
Input Voltage Noise f = 10 kHz 16 nV/√Hz
Input Current Noise f = 1 kHz 1 fA/√Hz
Harmonic Distortion RL = 100 Ω, VO = 2 V p-p, f = 20 kHz −93 dBc
Crosstalk
f = 1 kHz RL = 5 kΩ −105 dB
f = 1 MHz RL = 5 kΩ −63 dB
DC PERFORMANCE
Initial Offset 0.2 1.5 mV
Maximum Offset Over temperature 0.5 2.5 mV
Offset Drift 2 μV/°C
Input Bias Current VCM = 0 V to 2 V 3 25 pA
at T
VCM = 0 V to 2 V 0.5 5 nA
MAX
Input Offset Current 2 20 pA
at T
0.5 nA
MAX
Open-Loop Gain VO = 0.2 V to 2 V, RL = 2 kΩ 15 30 V/mV
T
to T
MIN
INPUT CHARACTERISTICS
Input Common-Mode Voltage Range −0.2 to +1 −0.2 to +1.8 V
Input Resistance 1013 Ω
Input Capacitance 1.8 pF
Common-Mode Rejection Ratio VCM = 0 V to 1 V 54 70 dB
OUTPUT CHARACTERISTICS
Output Voltage Swing
IL = ±100 μA 0.025 to 3.275 V
IL = ±2 mA 0.08 to 3.22 V
IL = ±10 mA 0.25 to 3.05 V
Output Current V
Short-Circuit Current Sourcing to 1.5 V 40 mA
Sinking to 1.5 V 30 mA
Capacitive Load Drive G = +1 500 pF
POWER SUPPLY
Operating Range 3 36 V
Quiescent Current T
Power Supply Rejection Ratio VS = 3.3 V to 15 V, T
12 V/mV
MAX
= 0.5 V to 2.5 V 15 mA
OUT
to T
MIN
, total 5.0 5.7 mA
MAX
to T
MIN
70 80 dB
MAX
Rev. B | Page 4 of 20
AD823
www.BDTIC.com/ADI
At TA = 25°C, VS = ±15 V, RL = 2 kΩ to 0 V, unless otherwise noted.
Table 3.
Parameter Conditions Min Typ Max Unit
DYNAMIC PERFORMANCE
−3 dB Bandwidth, VO ≤ 0.2 V p-p G = +1 12 16 MHz
Full Power Response VO = 2 V p-p 4 MHz
Slew Rate G = −1, VO = 10 V Step 17 25 V/μs
Settling Time
to 0.1% G = −1, VO = 10 V Step 550 ns
to 0.01% G = −1, VO = 10 V Step 650 ns
NOISE/DISTORTION PERFORMANCE
Input Voltage Noise f = 10 kHz 16 nV/√Hz
Input Current Noise f = 1 kHz 1 fA/√Hz
Harmonic Distortion RL = 600 Ω, VO = 10 V p-p, f = 20 kHz −90 dBc
Crosstalk
f = 1 kHz RL= 5 kΩ −105 dB
f = 1 MHz RL= 5 kΩ −63 dB
DC PERFORMANCE
Initial Offset 0.7 3.5 mV
Maximum Offset Over temperature 1.0 7 mV
Offset Drift 2 μV/°C
Input Bias Current VCM = 0 V 5 30 pA
V
at T
VCM = 0 V 0.5 5 nA
MAX
Input Offset Current 2 20 pA
at T
0.5 nA
MAX
Open-Loop Gain VO = +10 V to −10 V, RL = 2 kΩ 30 60 V/mV
T
to T
MIN
INPUT CHARACTERISTICS
Input Common-Mode Voltage Range −15.2 to +13 −15.2 to +13.8 V
Input Resistance 1013 Ω
Input Capacitance 1.8 pF
Common-Mode Rejection Ratio VCM = −15 V to +13 V 66 82 dB
OUTPUT CHARACTERISTICS
Output Voltage Swing
IL = ±100 μA −14.95 to +14.95 V
IL = ±2 mA −14.92 to +14.92 V
IL = ±10 mA −14.75 to +14.75 V
Output Current V
Short-Circuit Current Sourcing to 0 V 80 mA
Sinking to 0 V 60 mA
Capacitive Load Drive G = +1 500 pF
POWER SUPPLY
Operating Range 3 36 V
Quiescent Current T
Power Supply Rejection Ratio VS = 5 V to 15 V, T
30 V/mV
MAX
= −10 V 60 pA
CM
= −14.5 V to +14.5 V 17 mA
OUT
to T
MIN
, total 7.0 8.4 mA
MAX
to T
MIN
70 80 dB
MAX
Rev. B | Page 5 of 20
AD823
A
www.BDTIC.com/ADI
ABSOLUTE MAXIMUM RATINGS
Table 4
Parameter Rating
Supply Voltage 36 V
Internal Power Dissipation
PDIP (N) 1.3 W
SOIC (R) 0.9 W
Input Voltage (Common Mode) ±VS
Differential Input Voltage ±1.2 V
Output Short-Circuit Duration See Figure 4
Storage Temperature Range N, R −65°C to +125°C
Operating Temperature Range −40°C to +85°C
Lead Temperature Range
(Soldering, 10 sec)
300°C
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
2.0
8-LEAD PDIP
1.5
TION (W)
1.0
0.5
MAXIMUM POWER DISSIP
0
–5090–40 –30 –20 –10 0 10 20 3050 60 70 8040
Figure 4. Maximum Power Dissipation vs. Temperature
8-LEAD SOIC
AMBIENT TEMPERATURE (°C)
TJ = 150°C
THERMAL RESISTANCE
θJA is specified for the worst-case conditions, that is, a device
soldered in a circuit board for surface-mount packages.
Specification is for device in free air.
00901-004
Table 5. Thermal Resistance
Package Type θJA Unit
8-Lead PDIP 90 °C/W
8-Lead SOIC 160 °C/W
ESD CAUTION
Rev. B | Page 6 of 20
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