ANALOG DEVICES AD822-EP Service Manual
Single-Supply, Rail-to-Rail
FEATURES
True single-supply operation
Input voltage range extends below ground
Output swings rail-to-rail
Single-supply capability from 5 V to 30 V
Dual-supply capability from ±2.5 V to ±15 V
High load drive
Capacitive load drive of 350 pF, G = +1
Minimum output current of 15 mA
Excellent ac performance for low power
800 µA maximum quiescent current per amplifier
Unity-gain bandwidth: 1.8 MHz
Slew rate of 3 V/s
Good dc performance
800 µV maximum input offset voltage
2 µV/°C typical offset voltage drift
25 pA maximum input bias current
Low noise
13 nV/√Hz @ 10 kHz
No phase inversion
Low Power FET-Input Op Amp
AD822-EP
CONNECTION DIAGRAM
1
OUT1
2
–IN1
+IN1
3
4
V–
AD822-EP
Figure 1. 8-Lead SOIC_N (R Suffix)
GENERAL DESCRIPTION
The AD822-EP is a dual precision, low power FET input op
amp that can operate from a single supply of 5 V to 30 V or dual
supplies of ±2.5 V to ±15 V. It has true single-supply capability
with an input voltage range extending below the negative rail,
allowing the AD822 to accommodate input signals below
ground in the single-supply mode. Output voltage swing
extends to within 10 mV of each rail, providing the maximum
output dynamic range.
100
8
V+
OUT2
7
–IN2
6
5
+IN2
09208-001
ENHANCED PRODUCT FEATURES
Supports defense and aerospace applications (AQEC
standard)
Military temperature range (−55°C to +125°C)
Controlled manufacturing baseline
One assembly/test site
One fabrication site
Enhanced product change notification
Qualification data available on request
APPLICATIONS
Photodiode preamps
Active filters
12-bit to 14-bit data acquisition systems
Low power references and regulators
10
INPUT VOLTAGE NOISE (nV/√Hz)
1
10 10k
Figure 2. Input Voltage Noise vs. Frequency
100
FREQUENCY (Hz)
1k
09208-002
Offset voltage of 800 μV maximum, offset voltage drift of 2 μV/°C,
input bias currents below 25 pA, and low input voltage noise
provide dc precision with source impedances up to a gigaohm.
The 1.8 MHz unity-gain bandwidth, –93 dB THD at 10 kHz,
and 3 V/μs slew rate are provided with a low supply current of
800 μA per amplifier.
Rev. 0
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Anal og Devices for its use, nor for any infringements of patents or ot her
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700 www.analog.com
Fax: 781.461.3113 ©2010 Analog Devices, Inc. All rights reserved.
AD822-EP
TABLE OF CONTENTS
Features.............................................................................................. 1
Enhanced Product Features ............................................................ 1
Applications....................................................................................... 1
Connection Diagram ....................................................................... 1
General Description ......................................................................... 1
Revision History ............................................................................... 2
Specifications..................................................................................... 4
REVISION HISTORY
6/10—Revision 0: Initial Version
Absolute Maximum Ratings ......................................................... 10
Thermal Resistance.................................................................... 10
ESD Caution................................................................................ 10
Typical Performance Characteristics........................................... 11
Outline Dimensions....................................................................... 18
Ordering Guide .......................................................................... 18
Rev. 0 | Page 2 of 20
AD822-EP
The AD822-EP drives up to 350 pF of direct capacitive load as a
follower and provides a minimum output current of 15 mA.
This allows the amplifier to handle a wide range of load conditions.
Its combination of ac and dc performance, plus the outstanding
load drive capability, results in an exceptionally versatile amplifier
for the single-supply user.
The AD822-EP operates over the military temperature range of
−55°C to +125°C.
The AD822-EP is offered in an 8-lead SOIC_N package.
Full details about this enhanced product are available in the
AD822 data sheet, which should be consulted in conjunction
with this data sheet.
100
90
5V
V
OUT
10
0%
0V
(GND)
1V 20µs
........
.
....
....
1V
Figure 3. Gain-of-2 Amplifier; V
= 2.5 V Sine Centered at 1.25 V, RL = 100 Ω
V
IN
1V
.... .... .... ....
.... .... .... ....
....
....
= 5 V, 0 V,
S
.... .... ....
.... .... ....
9208-003
Rev. 0 | Page 3 of 20
AD822-EP
SPECIFICATIONS
VS = 0 V, 5 V @ TA = 25°C, VCM = 0 V, V
Table 1.
T Grade
Parameter Test Conditions/Comments Min Typ Max Unit
DC PERFORMANCE
Initial Offset 0.1 0.8 mV
Maximum Offset Over Temperature 0.5 1.2 mV
Offset Drift 2 μV/°C
Input Bias Current VCM = 0 V to 4 V 2 25 pA
At T
0.5 6 nA
MAX
Input Offset Current 2 20 pA
At T
0.5 nA
MAX
Open-Loop Gain V
R
T
to T
MIN
400 V/mV
MAX
R
T
to T
MIN
80 V/mV
MAX
R
T
to T
MIN
10 V/mV
MAX
NOISE/HARMONIC PERFORMANCE
Input Voltage Noise
f = 0.1 Hz to 10 Hz 2 μV p-p
f = 10 Hz 25 nV/√Hz
f = 100 Hz 21 nV/√Hz
f = 1 kHz 16 nV/√Hz
f = 10 kHz 13 nV/√Hz
Input Current Noise
f = 0.1 Hz to 10 Hz 18 fA p-p
f = 1 kHz 0.8 fA/√Hz
Harmonic Distortion RL = 10 kΩ to 2.5 V
f = 10 kHz V
DYNAMIC PERFORMANCE
Unity-Gain Frequency 1.8 MHz
Full Power Response V
Slew Rate 3 V/μs
Settling Time
To 0.1% V
To 0.01% V
MATCHING CHARACTERISTICS
Initial Offset 1.0 mV
Maximum Offset Over Temperature 1.6 mV
Offset Drift 3 μV/°C
Input Bias Current 20 pA
Crosstalk @ f = 1 kHz RL = 5 kΩ −130 dB
Crosstalk @ f = 100 kHz RL = 5 kΩ −93 dB
= 0.2 V, unless otherwise noted.
OUT
= 0.2 V to 4 V
OUT
= 100 kΩ 500 1000 V/mV
L
= 10 kΩ 80 150 V/mV
L
= 1 kΩ 15 30 V/mV
L
= 0.25 V to 4.75 V −93 dB
OUT
p-p = 4.5 V 210 kHz
OUT
= 0.2 V to 4.5 V 1.4 μs
OUT
= 0.2 V to 4.5 V 1.8 μs
OUT
Rev. 0 | Page 4 of 20
AD822-EP
T Grade
Parameter Test Conditions/Comments Min Typ Max Unit
INPUT CHARACTERISTICS
Input Voltage Range1, T
Common-Mode Rejection Ratio (CMRR) VCM = 0 V to 2 V 66 80 dB
T
to T
MIN
V
MAX
Input Impedance
Differential 1013||0.5 Ω||pF
Common Mode 1013||2.8 Ω||pF
OUTPUT CHARACTERISTICS
Output Saturation Voltage2
VOL − VEE I
T
to T
MIN
10 mV
MAX
VCC − VOH I
T
to T
MIN
20 mV
MAX
VOL − VEE I
T
to T
MIN
80 mV
MAX
VCC − VOH I
T
to T
MIN
160 mV
MAX
VOL – VEE I
T
to T
MIN
1000 mV
MAX
VCC − VOH I
T
to T
MIN
1900 mV
MAX
Operating Output Current 15 mA
T
to T
MIN
12 mA
MAX
Capacitive Load Drive 350 pF
POWER SUPPLY
Quiescent Current, T
Power Supply Rejection V+ = 5 V to 15 V 66 80 dB
T
to T
MIN
1
This is a functional specification. Amplifier bandwidth decreases when the input common-mode voltage is driven in the range (V+ − 1 V) to V+. Common-mode error
voltage is typically less than 5 mV with the common-mode voltage set at 1 V below the positive supply.
2
VOL − VEE is defined as the difference between the lowest possible output voltage (VOL) and the negative voltage supply rail (VEE). VCC − VOH is defined as the difference
between the highest possible output voltage (VOH) and the positive supply voltage (VCC).
66 dB
MAX
MIN
to T
MIN
to T
−0.2 +4 V
MAX
= 0 V to 2 V 66 dB
CM
= 20 μA 5 7 mV
SINK
= 20 μA 10 14 mV
SOURCE
= 2 mA 40 55 mV
SINK
= 2 mA 80 110 mV
SOURCE
= 15 mA 300 500 mV
SINK
= 15 mA 800 1500 mV
SOURCE
1.24 1.6 mA
MAX
Rev. 0 | Page 5 of 20
AD822-EP
VS = ±5 V @ TA = 25°C, VCM = 0 V, V
Table 2.
T Grade
Parameter Test Conditions/Comments Min Typ Max Unit
DC PERFORMANCE
Initial Offset 0.1 0.8 mV
Maximum Offset Over Temperature 0.5 1.5 mV
Offset Drift 2 μV/°C
Input Bias Current VCM = −5 V to +4 V 2 25 pA
At T
0.5 6 nA
MAX
Input Offset Current 2 20 pA
At T
0.5 nA
MAX
Open-Loop Gain V
R
T
to T
MIN
400 V/mV
MAX
R
T
to T
MIN
80 V/mV
MAX
R
T
to T
MIN
10 V/mV
MAX
NOISE/HARMONIC PERFORMANCE
Input Voltage Noise
f = 0.1 Hz to 10 Hz 2 μV p-p
f = 10 Hz 25 nV/√Hz
f = 100 Hz 21 nV/√Hz
f = 1 kHz 16 nV/√Hz
f = 10 kHz 13 nV/√Hz
Input Current Noise
f = 0.1 Hz to 10 Hz 18 fA p-p
f = 1 kHz 0.8 fA/√Hz
Harmonic Distortion RL = 10 kΩ
f = 10 kHz V
DYNAMIC PERFORMANCE
Unity-Gain Frequency 1.9 MHz
Full Power Response V
Slew Rate 3 V/μs
Settling Time
to 0.1% V
to 0.01% V
MATCHING CHARACTERISTICS
Initial Offset 1.0 mV
Maximum Offset Over Temperature 3 mV
Offset Drift 3 μV/°C
Input Bias Current 25 pA
Crosstalk @ f = 1 kHz RL = 5 kΩ −130 dB
Crosstalk @ f = 100 kHz RL = 5 kΩ −93 dB
INPUT CHARACTERISTICS
Input Voltage Range1, T
MIN
to T
Common-Mode Rejection Ratio (CMRR) VCM = −5 V to +2 V 66 80 dB
T
to T
MIN
V
MAX
Input Impedance
Differential 1013||0.5 Ω||pF
Common Mode 1013||2.8 Ω||pF
= 0 V, unless otherwise noted.
OUT
= −4 V to +4 V
OUT
= 100 kΩ 400 1000 V/mV
L
= 10 kΩ 80 150 V/mV
L
= 1 kΩ 20 30 V/mV
L
= ±4.5 V −93 dB
OUT
p-p = 9 V 105 kHz
OUT
= 0 V to ±4.5 V 1.4 μs
OUT
= 0 V to ±4.5 V 1.8 μs
OUT
−5.2 +4 V
MAX
= −5 V to +2 V 66 dB
CM
Rev. 0 | Page 6 of 20
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