Analog Devices AD822 e Datasheet

Single-Supply, Rail-to-Rail

1

2

3

4

8

7

6

5

AD822

OUT1

–IN1

+IN1

V–

V+

OUT2

–IN2

+IN2

90

100

10

0%

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. . .. . . .. . . .. . .

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.

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. . .. . . .. . . .. . .

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.

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.

. . .. . . .. . .

.

(GND )

V

OUT

5V

0V

1V 20µs

1V

1V

Low Power FET-Input Op Amp

AD822

FEATURES
True Single-Supply Operation

Output Swings Rail-to-Rail
Input Voltage Range Extends Below Ground
Single-Supply Capability from 3 V to 36 V
Dual-Supply Capability from 1.5 V to 18 V

High Load Drive

Capacitive Load Drive of 350 pF, G = +1
Minimum Output Current of 15 mA

Excellent AC Performance for Low Power

800 A Max Quiescent Current per Amplifier
Unity Gain Bandwidth: 1.8 MHz
Slew Rate of 3.0 V/ms

Good DC Performance

800 V Max Input Offset Voltage
2 V/C Typ Offset Voltage Drift
25 pA Max Input Bias Current

Low Noise
13 nV/÷Hz @ 10 kHz
No Phase Inversion

APPLICATIONS
Battery-Powered Precision Instrumentation
Photodiode Preamps
Active Filters
12- to 14-Bit Data Acquisition Systems
Medical Instrumentation
Low Power References and Regulators

GENERAL DESCRIPTION

The AD822 is a dual precision, low power FET input op amp
that can operate from a single supply of 3.0 V to 36 V or dual
supplies of ± 1.5 V to ± 18 V. It has true single-supply capability

100

CONNECTION DIAGRAM

8-Lead Plastic DIP, MSOP, and SOIC

with an input voltage range extending below the negative rail,
allowing the AD822 to accommodate input signals below ground
in the Single-Supply Mode. Output voltage swing extends to
within 10 mV of each rail providing the maximum output
dynamic range.

Offset voltage of 800 mV maximum, offset voltage drift of 2 mV/∞C,
input bias currents below 25 pA, and low input voltage noise
provide dc precision with source impedances up to a gigaohm.

1.8 MHz unity gain bandwidth, –93 dB THD at 10 kHz, and
3V/ms slew rate are provided with a low supply current of
800 mA per amplifier. The AD822 drives up to 350 pF of
direct capacitive load as a follower and provides a minimum
output current of 15 mA. This allows the amplifier to handle a
wide range of load conditions. Its combination of ac and dc
performance, plus the outstanding load drive capability, results
in an exceptionally versatile amplifier for the single-supply user.

The AD822 is available in two performance grades. The A and
B grades are rated over the industrial temperature range of
–40∞C to +85∞C.

The AD822 is offered in three varieties of 8-lead packages:
plastic PDIP, MSOP, and SOIC.

Z

H

nV/
–

NOISE

10

VOLTAGE

INPUT

1

10 10k

REV. E

Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties that
may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Analog Devices. Trademarks and
registered trademarks are the property of their respective companies.

Figure 1. Input Voltage Noise vs. Frequency

100

FREQUENCY – Hz

1k

Figure 2. Gain-of-2 Amplifier; VS = 5, 0, VIN = 2.5 V
Sine Centered at 1.25 V, R

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: [phone] www.analog.com
Fax: [phone] © Analog Devices, Inc. All rights reserved.

= 100 k

L

W

AD822–SPECIFICATIONS

(VS = 0, 5 V @ TA = 25C, VCM = 0 V, V

AD822A AD822B

= 0.2 V, unless otherwise noted.)

OUT

Parameter Conditions Min Typ Max Min Typ Max Unit

DC PERFORMANCE

Initial Offset 0.1 0.8 0.1 0.4 mV
Max Offset over Temperature 0.5 1.2 0.5 0.9 mV
Offset Drift 22mV/∞C
Input Bias Current VCM = 0 V to 4 V 2 25 2 10 pA

at T

MAX

Input Offset Current 2 20 2 10 pA

at T

MAX

Open-Loop Gain VO = 0.2 V to 4 V

0.5 5 0.5 2.5 nA

0.5 0.5 nA

RL = 100 kW 500 1000 500 1000 V/mV

T

to T

MIN

MAX

T

to T

MIN

MAX

T

to T

MIN

MAX

RL = 10 kW 80 150 80 150 V/mV

RL = 1 kW 15 30 15 30 V/mV

400 400 V/mV

80 80 V/mV

10 10 V/mV

NOISE/HARMONIC PERFORMANCE

Input Voltage Noise

0.1 Hz to 10 Hz 2 2 mV p-p
f = 10 Hz 25 25 nV/÷Hz
f = 100 Hz 21 21 nV/÷Hz
f = 1 kHz 16 16 nV/÷Hz
f = 10 kHz 13 13 nV/÷Hz

Input Current Noise

0.1 Hz to 10 Hz 18 18 fA p-p
f = 1 kHz 0.8 0.8 fA/÷Hz

Harmonic Distortion RL = 10 kW to 2.5 V

f = 10 kHz VO = 0.25 V to 4.75 V –93 –93 dB

DYNAMIC PERFORMANCE

Unity Gain Frequency 1.8 1.8 MHz
Full Power Response VO p-p = 4.5 V 210 210 kHz
Slew Rate 33V/ms
Settling Time

to 0.1% VO = 0.2 V to 4.5 V 1.4 1.4 ms
to 0.01% 1.8 1.8 ms

MATCHING CHARACTERISTICS

Initial Offset 1.0 0.5 mV
Max Offset over Temperature 1.6 1.3 mV

Offset Drift 3 3 mV/∞C

Input Bias Current 20 10 pA
Crosstalk @ f = 1 kHz RL = 5 kW –130 –130 dB

f = 100 kHz –93 –93 dB

INPUT CHARACTERISTICS

Input Voltage Range

T

to T

MIN

Common-Mode Rejection Ratio (CMRR) VCM = 0 V to 2 V 66 80 69 80 dB

T

to T

MIN

Input Impedance

MAX

MAX

1

–0.2 +4 –0.2 +4 V
–0.2 +4 –0.2 +4 V

VCM = 0 V to 2 V 66 66 dB

Differential 1013储0.5 1013储0.5 W储pF
Common Mode 1013储2.8 1013储2.8 W储pF

OUTPUT CHARACTERISTICS

Output Saturation Voltage
VOL–V

EE

T

to T

MIN

MIN

MIN

MIN

MIN

MIN

MIN

OH

to T

EE

to T

OH

to T

EE

to T

OH

to T

to T

MAX

MAX

MAX

MAX

MAX

MAX

MAX

VCC–V

T

VOL–V

T

VCC–V

T

VOL–V

T

VCC–V

T

Operating Output Current 15 15 mA

T

Capacitive Load Drive 350 350 pF

2

I

= 20 mA5757mV

SINK

I

= 20 mA1014 1014 mV

SOURCE

I

= 2 mA 40 55 40 55 mV

SINK

I

= 2 mA 80 110 80 110 mV

SOURCE

I

= 15 mA 300 500 300 500 mV

SINK

I

= 15 mA 800 1500 800 1500 mV

SOURCE

10 10 mV

20 20 mV

80 80 mV

160 160 mV

1000 1000 mV

1900 1900 mV

12 12 mA

POWER SUPPLY

Quiescent Current T
Power Supply Rejection VS+ = 5 V to 15 V 66 80 70 80 dB

T

to T

MIN

MAX

Specifications subject to change without notice.

MIN

to T

MAX

1.24 1.6 1.24 1.6 mA

66 70 dB

REV. E–2–

SPECIFICATIONS

Parameter Conditions Min Typ Max Min Typ Max Unit

DC PERFORMANCE

Initial Offset 0.1 0.8 0.1 0.4 mV
Max Offset over Temperature 0.5 1.5 0.5 1 mV
Offset Drift 22mV/∞C
Input Bias Current V

at T

MAX

Input Offset Current 2 20 2 10 pA

at T

MAX

Open-Loop Gain V

to T

T

MIN

MAX

to T

T

MIN

MAX

T

to TMAX 10 10 V/mV

MIN

NOISE/HARMONIC PERFORMANCE

Input Voltage Noise

0.1 Hz to 10 Hz 2 2 mV p-p
f = 10 Hz 25 25 nV/÷Hz
f = 100 Hz 21 21 nV/÷Hz
f = 1 kHz 16 16 nV/÷Hz
f = 10 kHz 13 13 nV/÷Hz

Input Current Noise

0.1 Hz to 10 Hz 18 18 fA p-p
f = 1 kHz 0.8 0.8 fA/÷Hz

Harmonic Distortion R

f = 10 kHz VO = ± 4.5 V –93 –93 dB

DYNAMIC PERFORMANCE

Unity Gain Frequency 1.9 1.9 MHz
Full Power Response V
Slew Rate 33V/ms
Settling Time

to 0.1% V
to 0.01% 1.8 1.8 ms

MATCHING CHARACTERISTICS

Initial Offset 1.0 0.5 mV
Max Offset over Temperature 3 2 mV

Offset Drift 33mV/∞C

Input Bias Current 25 10 pA
Crosstalk @ f = 1 kHz R

f = 100 kHz –93 –93 dB

INPUT CHARACTERISTICS

Input Voltage Range

to T

T

MIN

MIN

MIN

MIN

MIN

MIN

MIN

MIN

MIN

MIN

EE

to T

to T

to T

to T

to T

to T

to T

to T

to T

MAX

MAX

MAX

MAX

MAX

MAX

MAX

MAX

MAX

MAX

Common-Mode Rejection Ratio (CMRR) V

T

Input Impedance

Differential 10
Common Mode 1013储2.8 1013储2.8 W储pF

OUTPUT CHARACTERISTICS

Output Saturation Voltage
VOL–V

T

V

CC–VOH

T

V

OL–VEE

T

V

CC–VOH

T

V

OL–VEE

T

V

CC–VOH

T

Operating Output Current 15 15 mA

T

Capacitive Load Drive 350 350 pF

POWER SUPPLY

Quiescent Current T
Power Supply Rejection V

T

Specifications subject to change without notice.

REV. E

(VS = 5 V @ TA = 25C, VCM = 0 V, V

CM

= –4 V to +4 V

O

= 100 kW 400 1000 400 1000 V/mV

R

L

= 10 kW 80 150 80 150 V/mV

R

L

= 1 kW 20 30 20 30 V/mV

R

L

= 10 kW

L

p-p = 9 V 105 105 kHz

O

= 0 V to ± 4.5 V 1.4 1.4 ms

O

= 5 kW –130 –130 dB

L

1

CM

VCM = –5 V to +2 V 66 66 dB

2

I

SINK

I

SOURCE

I

SINK

I

SOURCE

I

SINK

I

SOURCE

to T

MIN

MAX

+ = 5 V to 15 V 66 80 70 80 dB

S

= 0 V, unless otherwise noted.)

OUT

AD822A AD822B

= –5 V to +4 V 2 25 2 10 pA

0.5 5 0.5 2.5 nA

0.5 0.5 nA

400 400 V/mV

80 80 V/mV

–5.2 +4 –5.2 +4 V
–5.2 +4 –5.2 +4 V

= –5 V to +2 V 66 80 69 80 dB

13

储0.5 1013储0.5 W储pF

= 20 mA5757mV

10 10 mV

= 20 mA10141014 mV

20 20 mV

= 2 mA 40 55 40 55 mV

80 80 mV

= 2 mA 80 110 80 110 mV

160 160 mV

= 15 mA 300 500 300 500 mV

1000 1000 mV

= 15 mA 800 1500 800 1500 mV

1900 1900 mV

12 12 mA

1.3 1.6 1.3 1.6 mA

66 70 dB

–3–

AD822

AD822
SPECIFICATIONS

(VS = 15 V @ TA = 25C, VCM = 0 V, V

= 0 V, unless otherwise noted.)

OUT

AD822A AD822B

Parameter Conditions Min Typ Max Min Typ Max Unit

DC PERFORMANCE

Initial Offset 0.4 2 0.3 1.5 mV
Max Offset over Temperature 0.5 3 0.5 2.5 mV
Offset Drift 22mV/∞C
Input Bias Current V

at T

MAX

Input Offset Current 2 20 2 12 pA

at T

MAX

Open-Loop Gain V

= 100 kW 500 2000 500 2000 V/mV

R

L

to T

T

MIN

MAX

= 10 kW 100 500 100 500 V/mV

R

L

T

to T

MIN

MAX

R

= 1 kW 30 45 30 45 V/mV

L

T

to T

MIN

MAX

= 0 V 2 25 2 12 pA

CM

V

= –10 V 40 40 pA

CM

VCM = 0 V 0.5 5 0.5 2.5 nA

0.5 0.5 nA

= +10 V to –10 V

O

500 500 V/mV

100 100 V/mV

20 20 V/mV

NOISE/HARMONIC PERFORMANCE

Input Voltage Noise

0.1 Hz to 10 Hz 2 2 mV p-p
f = 10 Hz 25 25 nV/÷Hz
f = 100 Hz 21 21 nV/÷Hz
f = 1 kHz 16 16 nV/÷Hz
f = 10 kHz 13 13 nV/÷Hz

Input Current Noise

0.1 Hz to 10 Hz 18 18 fA p-p
f = 1 kHz 0.8 0.8 fA/÷Hz

Harmonic Distortion R

f = 10 kHz VO = ± 10 V –85 –85 dB

= 10 kW

L

DYNAMIC PERFORMANCE

Unity Gain Frequency 1.9 1.9 MHz
Full Power Response V
Slew Rate 33V/ms

p-p = 20 V 45 45 kHz

O

Settling Time

to 0.1% V
to 0.01% 4.5 4.5 ms

= 0 V to ± 10 V 4.1 4.1 ms

O

MATCHING CHARACTERISTICS

Initial Offset 32mV
Max Offset over Temperature 4 2.5 mV

Offset Drift 33mV/∞C

Input Bias Current 25 12 pA
Crosstalk @ f = 1 kHz R

f = 100 kHz –93 –93 dB

INPUT CHARACTERISTICS

Input Voltage Range

to T

T

MIN

Common-Mode Rejection Ratio (CMRR) V

to T

T

MIN

Input Impedance

1

MAX

MAX

= 5 kW –130 –130 dB

L

–15.2 +14 –15.2 +14 V
–15.2 +14 –15.2 +14 V

= –15 V to +12 V 70 80 74 90 dB

CM

VCM = –15 V to +12 V 70 74 dB

Differential 1013储0.5 1013储0.5 W储pF
Common Mode 1013储2.8 1013储2.8 W储pF

OUTPUT CHARACTERISTICS

Output Saturation Voltage
VOL–V

EE

to T

T

MIN

MIN

MIN

MIN

MIN

MIN

MIN

to T

to T

to T

to T

to T

to T

MAX

MAX

MAX

MAX

MAX

MAX

MAX

V

CC–VOH

T

V

OL–VEE

T

V

CC–VOH

T

V

OL–VEE

T

V

CC–VOH

T

Operating Output Current 20 20 mA

T

Capacitive Load Drive 350 350 pF

2

I

= 20 mA5757mV

SINK

I

= 20 mA10141014 mV

SOURCE

I

= 2 mA 40 55 40 55 mV

SINK

I

= 2 mA 80 110 80 110 mV

SOURCE

I

= 15 mA 300 500 300 500 mV

SINK

I

= 15 mA 800 1500 800 1500 mV

SOURCE

10 10 mV

20 20 mV

80 80 mV

160 160 mV

1000 1000 mV

1900 1900 mV

15 15 mA

POWER SUPPLY

Quiescent Current T
Power Supply Rejection V

T

to T

MIN

MAX

Specifications subject to change without notice.

MIN

to T

MAX

S

70 70 dB

+ = 5 V to 15 V 70 80 70 80 dB

1.4 1.8 1.4 1.8 mA

REV. E–4–

AD822

SPECIFICATIONS

(VS = 0, 3 V @ TA = 25C, VCM = 0 V, V

= 0.2 V, unless otherwise noted.)

OUT

Parameter Conditions Typ Unit

DC PERFORMANCE

Initial Offset 0.2 mV
Max Offset over Temperature 0.5 mV
Offset Drift 1 mV/∞C
Input Bias Current VCM = 0 V to 2 V 2 pA

at T

MAX

Input Offset Current 2pA

at T

MAX

Open-Loop Gain VO = 0.2 V to 2 V

0.5 nA

0.5 nA

RL = 100 kW 1000 V/mV
RL = 10 kW 150 V/mV
RL = 1 kW 30 V/mV

NOISE/HARMONIC PERFORMANCE

Input Voltage Noise

0.1 Hz to 10 Hz 2 mV p-p
f = 10 Hz 25 nV/÷Hz
f = 100 Hz 21 nV/÷Hz
f = 1 kHz 16 nV/÷Hz
f = 10 kHz 13 nV/÷Hz

Input Current Noise

0.1 Hz to 10 Hz 18 fA p-p
f = 1 kHz 0.8 fA/÷Hz

Harmonic Distortion RL = 10 kW to 1.5 V

f = 10 kHz VO = ± 1.25 V –92 dB

DYNAMIC PERFORMANCE

Unity Gain Frequency 1.5 MHz
Full Power Response VO p-p = 2.5 V 240 kHz
Slew Rate 3V/ms
Settling Time

to 0.1% VO = 0.2 V to 2.5 V 1 ms
to 0.01% 1.4 ms

MATCHING CHARACTERISTICS

Offset Drift 2 mV/∞C
Crosstalk @ f = 1 kHz RL = 5 kW –130 dB

f = 100 kHz –93 dB

INPUT CHARACTERISTICS

CMRR VCM = 0 V to 1 V 74 dB
Input Impedance

Differential 1013储0.5 W储pF
Common Mode 1013储2.8 W储pF

OUTPUT CHARACTERISTICS

Output Saturation Voltage
VOL–V

EE

VCC–V

OH

VOL–V

EE

VCC–V

OH

VOL–V

EE

VCC–V

OH

Capacitive Load Drive 350 pF

2

I

= 20 mA5mV

SINK

I

= 20 mA10mV

SOURCE

I

= 2 mA 40 mV

SINK

I

= 2 mA 80 mV

SOURCE

I

= 10 mA 200 mV

SINK

I

= 10 mA 500 mV

SOURCE

POWER SUPPLY

Quiescent Current 1.24 mA
Power Supply Rejection VS+ = 3 V to 15 V 80 dB

NOTES

1

This is a functional specification. Amplifier bandwidth decreases when the input common-mode voltage is driven in the range (+V
voltage is typically less than 5 mV with the common-mode voltage set at 1 V below the positive supply.

2

VOL–VEE is defined as the difference between the lowest possible output voltage (VOL) and the negative voltage supply rail (VEE). VCC–VOH is defined as the difference
between the highest possible output voltage (VOH) and the positive supply voltage (VCC).

Specifications subject to change without notice.

– 1 V) to +VS. Common-mode error

S

REV. E

–5–

AD822

ABSOLUTE MAXIMUM RATINGS

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 18 V

Internal Power Dissipation

2

Plastic DIP (N) . . . . . . . . . . . . . . . Observe Derating Curves

SOIC (R) . . . . . . . . . . . . . . . . . . . Observe Derating Curves

Input Voltage . . . . . . . . . . . . . . (+V

Output Short Circuit Duration . . . . . . . . . . . . . . . . Indefinite

Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . ± 30 V

Storage Temperature Range (N) . . . . . . . . . –65∞C to +125∞C

Storage Temperature Range (R, RM) . . . . . –65∞C to +150∞C

Operating Temperature Range

AD822A/AD822B . . . . . . . . . . . . . . . . . . . –40∞C to +85∞C

Lead Temperature Range (Soldering, 60 sec) . . . . . . . . 260∞C

NOTES

1

Stresses above those listed under Absolute Maximum Ratings may cause perma-

nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.

2

8-Lead Plastic DIP Package: ␪JA = 90∞C/W

8-Lead SOIC Package: ␪JA = 160∞C/W
8-Lead MSOP Package: ␪JA = 190∞C/W

1

+ 0.2 V) to –(20 V + VS)

S

MAXIMUM POWER DISSIPATION

The maximum power that can be safely dissipated by the AD822
is limited by the associated rise in junction temperature. For plastic
packages, the maximum safe junction temperature is 145∞C. If
these maximums are exceeded momentarily, proper circuit opera­tion will be restored as soon as the die temperature is reduced.
Leaving the device in the “overheated” condition for an extended
period can result in device burnout. To ensure proper operation,
it is important to observe the derating curves shown in TPC 24.

While the AD822 is internally short circuit protected, this may
not be sufficient to guarantee that the maximum junction tempera­ture is not exceeded under all conditions. With power supplies
± 12 V (or less) at an ambient temperature of 25∞C or less, if the
output node is shorted to a supply rail, then the amplifier will not
be destroyed, even if this condition persists for an extended period.

ORDERING GUIDE

Model* Temperature Range Package Description Package Option Branding Information

AD822AN –40∞C to +85∞C 8-Lead PDIP N-8
AD822AR –40∞C to +85∞C 8-Lead SOIC R-8
AD822ARM –40∞C to +85∞C 8-Lead MSOP RM-8 B4A
AD822BR –40∞C to +85∞C 8-Lead SOIC R-8

*SPICE model is available at www.analog.com.

CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection. Although the
AD822 features proprietary ESD protection circuitry, permanent damage may occur on devices
subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended
to avoid performance degradation or loss of functionality.

REV. E–6–