Analog Devices AD822BR, AD822ARM, AD822AR, AD822AN Datasheet
CONNECTION DIAGRAM
8-Lead Plastic DIP, MSOP, and SOIC
1
2
3
4
8
7
6
5
AD822
OUT1
–IN1
+IN1
V–
V+
OUT2
–IN2
+IN2
a
Single Supply, Rail-to-Rail
Low Power FET-Input Op Amp
AD822
FEATURES
True Single Supply Operation
Output Swings Rail to Rail
Input Voltage Range Extends below Ground
Single Supply Capability from 3 V to 36 V
Dual Supply Capability from 1.5 V to 18 V
High Load Drive
Capacitive Load Drive of 350 pF, G = +1
Minimum Output Current of 15 mA
Excellent AC Performance for Low Power
800 mA Max Quiescent Current per Amplifier
Unity Gain Bandwidth: 1.8 MHz
Slew Rate of 3.0 V/ms
Good DC Performance
800 mV Max Input Offset Voltage
2 mV/C Typ Offset Voltage Drift
25 pA Max Input Bias Current
Low Noise
13 nV/√Hz @ 10 kHz
No Phase Inversion
APPLICATIONS
Battery-Powered Precision Instrumentation
Photodiode Preamps
Active Filters
12- to 14-Bit Data Acquisition Systems
Medical Instrumentation
Low Power References and Regulators
PRODUCT DESCRIPTION
The AD822 is a dual precision, low power FET input op amp
that can operate from a single supply of 3.0 V to 36 V, or dual
supplies of ±1.5 V to ±18 V. It has true single supply capability
with an input voltage range extending below the negative rail,
allowing the AD822 to accommodate input signals below ground
in the single supply mode. Output voltage swing extends to
within 10 mV of each rail providing the maximum output
dynamic range.
Offset voltage of 800 µV max, offset voltage drift of 2 µV/°C,
input bias currents below 25 pA and low input voltage noise
provide dc precision with source impedances up to a Gigaohm.
1.8 MHz unity gain bandwidth, –93 dB THD at 10 kHz and
3 V/µs slew rate are provided with a low supply current of 800 µA
per amplifier. The AD822 drives up to 350 pF of direct capacitive
load as a follower, and provides a minimum output current of
15 mA. This allows the amplifier to handle a wide range of load
conditions. This combination of ac and dc performance, plus
the outstanding load drive capability, results in an exceptionally
versatile amplifier for the single supply user.
The AD822 is available in two performance grades. The A and
B grades are rated over the industrial temperature range of –40°C
to +85°C.
The AD822 is offered in three varieties of 8-lead package:
Plastic DIP, MSOP, and SOIC.
20s
1V
90
100
10
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1V
1V
(GND)
V
OUT
5V
0V
Figure 2. Gain-of-2 Amplifier; VS = 5, 0, VIN = 2.5 V Sine
Centered at 1.25 V, R
L
= 100 k
Ω
FREQUENCY – Hz
1
10 10k
1k
100
INPUT
VOLTAGE
NOISE
–
nV/
H
Z
100
10
Figure 1. Input Voltage Noise vs. Frequency
REV. B
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781/329-4700 www.analog.com
Fax: 781/326-8703 © Analog Devices, Inc., 2001
REV. B
–2–
AD822–SPECIFICATIONS
(VS = 0, 5 V @ TA = 25C, VCM = 0 V, V
OUT
= 0.2 V unless otherwise noted.)
AD822A AD822B
Parameter Conditions Min Typ Max Min Typ Max Unit
DC PERFORMANCE
Initial Offset 0.1 0.8 0.1 0.4 mV
Max Offset over Temperature 0.5 1.2 0.5 0.9 mV
Offset Drift 22µV/°C
Input Bias Current VCM = 0 V to 4 V 2 25 2 10 pA
at T
MAX
0.5 5 0.5 2.5 nA
Input Offset Current 2 20 2 10 pA
at T
MAX
0.5 0.5 nA
Open-Loop Gain VO = 0.2 V to 4 V
RL = 100 kΩ 500 1000 500 1000 V/mV
T
MIN
to T
MAX
400 400 V/mV
RL = 10 kΩ 80 150 80 150 V/mV
T
MIN
to T
MAX
80 80 V/mV
RL = 1 kΩ 15 30 15 30 V/mV
T
MIN
to T
MAX
10 10 V/mV
NOISE/HARMONIC PERFORMANCE
Input Voltage Noise
0.1 Hz to 10 Hz 2 2 µV p-p
f = 10 Hz 25 25 nV/√Hz
f = 100 Hz 21 21 nV/√Hz
f = 1 kHz 16 16 nV/√Hz
f = 10 kHz 13 13 nV/√Hz
Input Current Noise
0.1 Hz to 10 Hz 18 18 fA p-p
f = 1 kHz 0.8 0.8 fA/√Hz
Harmonic Distortion RL = 10 kΩ to 2.5 V
f = 10 kHz VO = 0.25 V to 4.75 V –93 –93 dB
DYNAMIC PERFORMANCE
Unity Gain Frequency 1.8 1.8 MHz
Full Power Response VO p-p = 4.5 V 210 210 kHz
Slew Rate 33V/µs
Settling Time
to 0.1% VO = 0.2 V to 4.5 V 1.4 1.4 µs
to 0.01% 1.8 1.8 µs
MATCHING CHARACTERISTICS
Initial Offset 1.0 0.5 mV
Max Offset over Temperature 1.6 1.3 mV
Offset Drift 3 3 µV/°C
Input Bias Current 20 10 pA
Crosstalk @ f = 1 kHz RL = 5 kΩ –130 –130 dB
f = 100 kHz –93 –93 dB
INPUT CHARACTERISTICS
Common-Mode Voltage Range
2
–0.2 +4 –0.2 +4 V
T
MIN
to T
MAX
–0.2 +4 –0.2 +4 V
CMRR VCM = 0 V to 2 V 66 80 69 80 dB
T
MIN
to T
MAX
66 66 dB
Input Impedance
Differential 1013储0.5 1013储0.5 Ω储pF
Common Mode 1013储2.8 1013储2.8 Ω储pF
OUTPUT CHARACTERISTICS
Output Saturation Voltage
3
VOL–V
EE
I
SINK
= 20 µA5757mV
T
MIN
to T
MAX
10 10 mV
VCC–V
OH
I
SOURCE
= 20 µA 1014 1014 mV
T
MIN
to T
MAX
20 20 mV
VOL–V
EE
I
SINK
= 2 mA 40 55 40 55 mV
T
MIN
to T
MAX
80 80 mV
VCC–V
OH
I
SOURCE
= 2 mA 80 110 80 110 mV
T
MIN
to T
MAX
160 160 mV
VOL–V
EE
I
SINK
= 15 mA 300 500 300 500 mV
T
MIN
to T
MAX
1000 1000 mV
VCC–V
OH
I
SOURCE
= 15 mA 800 1500 800 1500 mV
T
MIN
to T
MAX
1900 1900 mV
Operating Output Current 15 15 mA
T
MIN
to T
MAX
12 12 mA
Capacitive Load Drive 350 350 pF
POWER SUPPLY
Quiescent Current T
MIN
to T
MAX
1.24 1.6 1.24 1.6 mA
Power Supply Rejection VS+ = 5 V to 15 V 66 80 70 80 dB
T
MIN
to T
MAX
66 70 dB
(VS = 5 V @ TA = 25C, VCM = 0 V, V
OUT
= 0 V unless otherwise noted.)
AD822A AD822B
Parameter Conditions Min Typ Max Min Typ Max Unit
DC PERFORMANCE
Initial Offset 0.1 0.8 0.1 0.4 mV
Max Offset over Temperature 0.5 1.5 0.5 1 mV
Offset Drift 22µV/°C
Input Bias Current VCM = –5 V to +4 V 2 25 2 10 pA
at T
MAX
0.5 5 0.5 2.5 nA
Input Offset Current 2 20 2 10 pA
at T
MAX
0.5 0.5 nA
Open-Loop Gain VO = –4 V to +4 V
RL = 100 kΩ 400 1000 400 1000 V/mV
T
MIN
to T
MAX
400 400 V/mV
RL = 10 kΩ 80 150 80 150 V/mV
T
MIN
to T
MAX
80 80 V/mV
RL = 1 kΩ 20 30 20 30 V/mV
T
MIN
to T
MAX
10 10 V/mV
NOISE/HARMONIC PERFORMANCE
Input Voltage Noise
0.1 Hz to 10 Hz 2 2 µV p-p
f = 10 Hz 25 25 nV/√Hz
f = 100 Hz 21 21 nV/√Hz
f = 1 kHz 16 16 nV/√Hz
f = 10 kHz 13 13 nV/√Hz
Input Current Noise
0.1 Hz to 10 Hz 18 18 fA p-p
f = 1 kHz 0.8 0.8 fA/√Hz
Harmonic Distortion RL = 10 kΩ
f = 10 kHz VO = ±4.5 V –93 –93 dB
DYNAMIC PERFORMANCE
Unity Gain Frequency 1.9 1.9 MHz
Full Power Response VO p-p = 9 V 105 105 kHz
Slew Rate 33V/µs
Settling Time
to 0.1% VO = 0 V to ±4.5 V 1.4 1.4 µs
to 0.01% 1.8 1.8 µs
MATCHING CHARACTERISTICS
Initial Offset 1.0 0.5 mV
Max Offset over Temperature 3 2 mV
Offset Drift 3 3 µV/°C
Input Bias Current 25 10 pA
Crosstalk @ f = 1 kHz RL = 5 kΩ –130 –130 dB
f = 100 kHz –93 –93 dB
INPUT CHARACTERISTICS
Common-Mode Voltage Range
2
–5.2 +4 –5.2 +4 V
T
MIN
to T
MAX
–5.2 +4 –5.2 +4 V
CMRR VCM = –5 V to +2 V 66 80 69 80 dB
T
MIN
to T
MAX
66 66 dB
Input Impedance
Differential 1013储0.5 1013储0.5 Ω储pF
Common Mode 1013储2.8 1013储2.8 Ω储pF
OUTPUT CHARACTERISTICS
Output Saturation Voltage
3
VOL–V
EE
I
SINK
= 20 µA5757mV
T
MIN
to T
MAX
10 10 mV
VCC–V
OH
I
SOURCE
= 20 µA 1014 1014 mV
T
MIN
to T
MAX
20 20 mV
VOL–V
EE
I
SINK
= 2 mA 40 55 40 55 mV
T
MIN
to T
MAX
80 80 mV
VCC–V
OH
I
SOURCE
= 2 mA 80 110 80 110 mV
T
MIN
to T
MAX
160 160 mV
VOL–V
EE
I
SINK
= 15 mA 300 500 300 500 mV
T
MIN
to T
MAX
1000 1000 mV
VCC–V
OH
I
SOURCE
= 15 mA 800 1500 800 1500 mV
T
MIN
to T
MAX
1900 1900 mV
Operating Output Current 15 15 mA
T
MIN
to T
MAX
12 12 mA
Capacitive Load Drive 350 350 pF
POWER SUPPLY
Quiescent Current T
MIN
to T
MAX
1.3 1.6 1.3 1.6 mA
Power Supply Rejection VS+ = 5 V to 15 V 66 80 70 80 dB
T
MIN
to T
MAX
66 70 dB
AD822
REV. B
–3–
AD822A AD822B
Parameter Conditions Min Typ Max Min Typ Max Unit
DC PERFORMANCE
Initial Offset 0.4 2 0.3 1.5 mV
Max Offset over Temperature 0.5 3 0.5 2.5 mV
Offset Drift 22µV/°C
Input Bias Current VCM = 0 V 2 25 2 12 pA
V
CM
= –10 V 40 40 pA
at T
MAX
VCM = 0 V 0.5 5 0.5 2.5 nA
Input Offset Current 2 20 2 12 pA
at T
MAX
0.5 0.5 nA
Open-Loop Gain VO = +10 V to –10 V
RL = 100 kΩ 500 2000 500 2000 V/mV
T
MIN
to T
MAX
500 500 V/mV
RL = 10 kΩ 100 500 100 500 V/mV
T
MIN
to T
MAX
100 100 V/mV
RL = 1 kΩ 30 45 30 45 V/mV
T
MIN
to T
MAX
20 20 V/mV
NOISE/HARMONIC PERFORMANCE
Input Voltage Noise
0.1 Hz to 10 Hz 2 2 µV p-p
f = 10 Hz 25 25 nV/√Hz
f = 100 Hz 21 21 nV/√Hz
f = 1 kHz 16 16 nV/√Hz
f = 10 kHz 13 13 nV/√Hz
Input Current Noise
0.1 Hz to 10 Hz 18 18 fA p-p
f = 1 kHz 0.8 0.8 fA/√Hz
Harmonic Distortion RL = 10 kΩ
f = 10 kHz VO = ±10 V –85 –85 dB
DYNAMIC PERFORMANCE
Unity Gain Frequency 1.9 1.9 MHz
Full Power Response VO p-p = 20 V 45 45 kHz
Slew Rate 33V/µs
Settling Time
to 0.1% VO = 0 V to ±10 V 4.1 4.1 µs
to 0.01% 4.5 4.5 µs
MATCHING CHARACTERISTICS
Initial Offset 32mV
Max Offset over Temperature 4 2.5 mV
Offset Drift 3 3 µV/°C
Input Bias Current 25 12 pA
Crosstalk @ f = 1 kHz RL = 5 kΩ –130 –130 dB
f = 100 kHz –93 –93 dB
INPUT CHARACTERISTICS
Common-Mode Voltage Range
2
–15.2 +14 –15.2 +14 V
T
MIN
to T
MAX
–15.2 +14 –15.2 +14 V
CMRR VCM = –15 V to +12 V 70 80 74 90 dB
T
MIN
to T
MAX
70 74 dB
Input Impedance
Differential 1013储0.5 1013储0.5 Ω储pF
Common Mode 1013储2.8 1013储2.8 Ω储pF
OUTPUT CHARACTERISTICS
Output Saturation Voltage
3
VOL–V
EE
I
SINK
= 20 µA5757mV
T
MIN
to T
MAX
10 10 mV
VCC–V
OH
I
SOURCE
= 20 µA 1014 1014 mV
T
MIN
to T
MAX
20 20 mV
VOL–V
EE
I
SINK
= 2 mA 40 55 40 55 mV
T
MIN
to T
MAX
80 80 mV
VCC–V
OH
I
SOURCE
= 2 mA 80 110 80 110 mV
T
MIN
to T
MAX
160 160 mV
VOL–V
EE
I
SINK
= 15 mA 300 500 300 500 mV
T
MIN
to T
MAX
1000 1000 mV
VCC–V
OH
I
SOURCE
= 15 mA 800 1500 800 1500 mV
T
MIN
to T
MAX
1900 1900 mV
Operating Output Current 20 20 mA
T
MIN
to T
MAX
15 15 mA
Capacitive Load Drive 350 350 pF
POWER SUPPLY
Quiescent Current T
MIN
to T
MAX
1.4 1.8 1.4 1.8 mA
Power Supply Rejection VS+ = 5 V to 15 V 70 80 70 80 dB
T
MIN
to T
MAX
70 70 dB
AD822–SPECIFICATIONS
(VS = 15 V @ TA = 25C, VCM = 0 V, V
OUT
= 0 V unless otherwise noted.)
REV. B
–4–
AD822
REV. B
(VS = 0, 3 V @ TA = 25C, VCM = 0 V, V
OUT
= 0.2 V unless otherwise noted.)
Parameter Conditions Typ Unit
DC PERFORMANCE
Initial Offset 0.2 mV
Max Offset over Temperature 0.5 mV
Offset Drift 1 µV/°C
Input Bias Current VCM = 0 V to 2 V 2 pA
at T
MAX
0.5 nA
Input Offset Current 2pA
at T
MAX
0.5 nA
Open-Loop Gain VO = 0.2 V to 2 V
RL = 100 kΩ 1000 V/mV
T
MIN
to T
MAX
RL = 10 kΩ 150 V/mV
T
MIN
to T
MAX
RL = 1 kΩ 30 V/mV
T
MIN
to T
MAX
NOISE/HARMONIC PERFORMANCE
Input Voltage Noise
0.1 Hz to 10 Hz 2 µV p-p
f = 10 Hz 25 nV/√Hz
f = 100 Hz 21 nV/√Hz
f = 1 kHz 16 nV/√Hz
f = 10 kHz 13 nV/√Hz
Input Current Noise
0.1 Hz to 10 Hz 18 fA p-p
f = 1 kHz 0.8 fA/√Hz
Harmonic Distortion RL = 10 kΩ to 1.5 V
f = 10 kHz VO = ±1.25 V –92 dB
DYNAMIC PERFORMANCE
Unity Gain Frequency 1.5 MHz
Full Power Response VO p-p = 2.5 V 240 kHz
Slew Rate 3V/µs
Settling Time
to 0.1% VO = 0.2 V to 2.5 V 1 µs
to 0.01% 1.4 µs
MATCHING CHARACTERISTICS
Initial Offset
Max Offset over Temperature
Offset Drift 2 µV/°C
Input Bias Current
Crosstalk @ f = 1 kHz RL = 5 kΩ –130 dB
f = 100 kHz –93 dB
INPUT CHARACTERISTICS
Common-Mode Voltage Range
2
T
MIN
to T
MAX
CMRR VCM = 0 V to 1 V 74 dB
T
MIN
to T
MAX
Input Impedance
Differential 1013储0.5 Ω储pF
Common Mode 1013储2.8 Ω储pF
OUTPUT CHARACTERISTICS
Output Saturation Voltage
3
VOL–V
EE
I
SINK
= 20 µA5mV
T
MIN
to T
MAX
VCC–V
OH
I
SOURCE
= 20 µA10mV
T
MIN
to T
MAX
VOL–V
EE
I
SINK
= 2 mA 40 mV
T
MIN
to T
MAX
VCC–V
OH
I
SOURCE
= 2 mA 80 mV
T
MIN
to T
MAX
VOL–V
EE
I
SINK
= 10 mA 200 mV
T
MIN
to T
MAX
VCC–V
OH
I
SOURCE
= 10 mA 500 mV
T
MIN
to T
MAX
Operating Output Current
T
MIN
to T
MAX
Capacitive Load Drive 350 pF
POWER SUPPLY
Quiescent Current T
MIN
to T
MAX
1.24 mA
Power Supply Rejection VS+ = 3 V to 15 V 80 dB
T
MIN
to T
MAX
–5–
–6–
AD822
REV. B
NOTES
1
See standard military drawing for 883B specifications.
2
This is a functional specification. Amplifier bandwidth decreases when the input common-mode voltage is driven in the range (+V
S
– 1 V) to +VS.
Common-mode error voltage is typically less than 5 mV with the common-mode voltage set at 1 volt below the positive supply.
3
VOL–VEE is defined as the difference between the lowest possible output voltage (VOL) and the minus voltage supply rail (VEE).
VCC–VOH is defined as the difference between the highest possible output voltage (VOH) and the positive supply voltage (VCC).
Specifications subject to change without notice.
ABSOLUTE MAXIMUM RATINGS
1
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 18 V
Internal Power Dissipation
Plastic DIP (N) . . . . . . . . . . . . . . Observe Derating Curves
SOIC (R) . . . . . . . . . . . . . . . . . . . Observe Derating Curves
Input Voltage . . . . . . . . . . . . . . (+V
S
+ 0.2 V) to –(20 V + VS)
Output Short Circuit Duration . . . . . . . . . . . . . . . . Indefinite
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . ± 30 V
Storage Temperature Range (N) . . . . . . . . . –65°C to +125°C
Storage Temperature Range (R, RM) . . . . . –65°C to +150°C
Operating Temperature Range
AD822A/B . . . . . . . . . . . . . . . . . . . . . . . . –40°C to +85°C
Lead Temperature Range (Soldering 60 sec) . . . . . . . . 260°C
NOTES
1
Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
2
8-Lead Plastic DIP Package: θJA = 90°C/W
8-Lead SOIC Package: θJA = 160°C/W
8-Lead MSOP Package: θJA = 190°C/W
MAXIMUM POWER DISSIPATION
The maximum power that can be safely dissipated by the AD822
is limited by the associated rise in junction temperature. For plastic
packages, the maximum safe junction temperature is 145°C. If
these maximums are exceeded momentarily, proper circuit
operation will be restored as soon as the die temperature is
reduced. Leaving the device in the “overheated” condition for
an extended period can result in device burnout. To ensure
proper operation, it is important to observe the derating curves
shown in TPC 24.
While the AD822 is internally short circuit protected, this may not
be sufficient to guarantee that the maximum junction temperature
is not exceeded under all conditions. With power supplies ±12 V
(or less) at an ambient temperature of 25°C or less, if the output
node is shorted to a supply rail, then the amplifier will not be
destroyed, even if this condition persists for an extended period.
AD822–SPECIFICATIONS
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection. Although
the AD822 features proprietary ESD protection circuitry, permanent damage may occur on devices
subjected to high-energy electrostatic discharges. Therefore, proper ESD precautions are
recommended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE
ORDERING GUIDE
Package Branding
M
odel* Temperature Range Package Description Option Information
AD822AN –40°C to +85°C 8-Lead PDIP N-8
AD822AR –40°C to +85°C 8-Lead SOIC R-8
AD822ARM –40°C to +85°C 8-Lead Mini_SOIC RM-8 B4A
AD822BR –40°C to +85°C 8-Lead SOIC R-8
*SPICE model is available at www.analog.com.
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