ANALOG DEVICES AD8132 Service Manual

Low Cost, High Speed

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FEATURES

High speed

350 MHz, −3 dB bandwidth

1200 V/μs slew rate Resistor set gain Internal common-mode feedback Improved gain and phase balance

−68 dB @ 10 MHz Separate input to set the common-mode output voltage Low distortion: −99 dBc SFDR @ 5 MHz, 800 Ω load Low power: 10.7 mA @ 5 V Power supply range: +2.7 V to ±5.5 V

APPLICATIONS

Low power differential ADC drivers Differential gain and differential filtering Video line drivers Differential in/out level shifting Single-ended input to differential output drivers Active transformers

GENERAL DESCRIPTION

Differential Amplifier

AD8132

PIN CONFIGURATION

AD8132

1

–IN

V

2

OCM

V+

3

+OUT

4

NC = NO CONNECT

Figure 1.

The AD8132 is also used as a differential driver for the transmission of high speed signals over low cost twisted pair or coaxial cables. The feedback network can be adjusted to boost the high frequency components of the signal. The AD8132 is used for either analog or digital video signals or for other high speed data transmission. The AD8132 is capable of driving either a Category 3 or Category 5 twisted pair or coaxial cable with minimal line attenuation. The AD8132 has considerable cost and performance improvements over discrete line driver solutions.

Differential signal processing reduces the effects of ground noise that plagues ground-referenced systems. The AD8132 can be used for differential signal processing (gain and filtering) throughout a signal chain, easily simplifying the conversion between differential and single-ended components.

8

+IN

NC

7

V–

6

–OUT

5

01035-001

The AD8132 is a low cost differential or single-ended input to differential output amplifier with resistor set gain. The AD8132 is a major advancement over op amps for driving differential input ADCs or for driving signals over long lines. The AD8132 has a unique internal feedback feature that provides output gain and phase matching balanced to −68 dB at 10 MHz, suppressing harmonics and reducing radiated EMI.

Manufactured using the next generation of Analog Devices, Inc.’s XFCB bipolar process, the AD8132 has a −3 dB bandwidth of 350 MHz and delivers a differential signal with −99 dBc SFDR at 5 MHz, despite its low cost. The AD8132 eliminates the need for a transformer with high performance ADCs, preserving the low frequency and dc information. The common-mode level of the differential output is adjustable by applying a voltage on the V

pin, easily level shifting the input signals for driving

OCM

single-supply ADCs. Fast overload recovery preserves sampling accuracy.

The AD8132 is available in both SOIC_N and MSOP packages for operation over the extended industrial temperature range of

−40°C to +125°C.

6

VS = ±5V G = +1

3

0

–3

GAIN (dB)

–6

–9

–12

= 2V p-p

V

O, dm

= 499Ω

R

L, dm

1

Figure 2. Large Signal Frequency Response

10 100 1k

FREQUENCY (MHz)

01035-002

Rev. F

Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Anal og Devices for its use, nor for any infringements of patents or ot her rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners.

AD8132

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TABLE OF CONTENTS

Features.............................................................................................. 1

Applications....................................................................................... 1

General Description ......................................................................... 1

Pin Configuration............................................................................. 1

Revision History ............................................................................... 2

Specifications..................................................................................... 3

±D

to ±OUT Specifications...................................................... 3

IN

V

to ±OUT Specifications ..................................................... 4

OCM

±D

to ±OUT Specifications...................................................... 5

IN

V

to ±OUT Specifications ..................................................... 6

OCM

±D

to ±OUT Specifications...................................................... 7

IN

V

to ±OUT Specifications ..................................................... 7

OCM

Absolute Maximum Ratings............................................................ 8

Thermal Resistance ...................................................................... 8

ESD Caution.................................................................................. 8

Pin Configuration and Function Descriptions............................. 9

Typical Performance Characteristics ........................................... 10

Test Circuits..................................................................................... 19

Operational Description................................................................ 20

Definition of Terms.................................................................... 20

Basic Circuit Operation............................................................. 20

Theory of Operation ...................................................................... 21

General Usage of the AD8132 .................................................. 21

Differential Amplifier Without Resistors (High Input

Impedance Inverting Amplifier).............................................. 21

Other β2 = 1 Circuits................................................................. 22

Varying β2 ................................................................................... 22

β1 = 0............................................................................................ 22

Estimating the Output Noise Voltage...................................... 22

Calculating Input Impedance of the Application Circuit ..... 23

Input Common-Mode Voltage Range in Single-Supply

Applications ................................................................................ 23

Setting the Output Common-Mode Voltage .......................... 23

Driving a Capacitive Load......................................................... 23

Open-Loop Gain and Phase ..................................................... 23

Layout, Grounding, and Bypassing.............................................. 24

Circuits......................................................................................... 24

Applications..................................................................................... 25

Analog-to-Digital Driver .......................................................... 25

Balanced Cable Driver............................................................... 25

Transmit Equalizer..................................................................... 26

Low-Pass Differential Filter ...................................................... 26

High Common-Mode Output Impedance Amplifier ........... 27

Full-Wave Rectifier .................................................................... 28

Outline Dimensions....................................................................... 29

Ordering Guide .......................................................................... 29

REVISION HISTORY

11/06—Rev. E to Rev. F

Updated Format..................................................................Universal

Changes to Table 1............................................................................ 3

Changes to Table 4............................................................................ 6

Changes to Table 5............................................................................ 7

Changes to Ordering Guide.......................................................... 29

11/05—Rev. D to Rev. E

Changes to Table 7, Thermal Resistance Section, Maximum

Power Dissipation Section, and Figure 3....................................... 8

Changes to Ordering Guide.......................................................... 29

Rev. F | Page 2 of 32

12/04—Rev. C to Rev. D

Changes to General Description .....................................................1

Changes to Specifications.................................................................2

Changes to Absolute Maximum Ratings........................................8

Updated Outline Dimensions....................................................... 29

Changes to Ordering Guide.......................................................... 29

2/03—Rev. B to Rev. C

Changes to Specifications.................................................................2

Addition to Estimating the Output Noise Voltage Section....... 15

Updated Outline Dimensions....................................................... 21

1/02—Rev. A to Rev. B

Edits to Transmitter Equalizer Section........................................ 18

AD8132

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SPECIFICATIONS

±DIN TO ±OUT SPECIFICATIONS

At TA = 25°C, VS = ±5 V, V

= 499 Ω. Refer to Figure 56 and Figure 57 for test setup and label descriptions. All specifications refer to single-ended input and

R

G

differential outputs, unless otherwise noted.

Table 1.

Parameter Conditions Min Typ Max Unit

DYNAMIC PERFORMANCE

−3 dB Large Signal Bandwidth V V

−3 dB Small Signal Bandwidth V V Bandwidth for 0.1 dB Flatness V V Slew Rate V Settling Time 0.1%, V Overdrive Recovery Time VIN = 5 V to 0 V step, G = 2 5 ns

NOISE/HARMONIC PERFORMANCE

Second Harmonic V V V Third Harmonic V V V IMD 20 MHz, R IP3 20 MHz, R Input Voltage Noise (RTI) f = 0.1 MHz to 100 MHz 8 nV/√Hz Input Current Noise f = 0.1 MHz to 100 MHz 1.8 pA/√Hz Differential Gain Error NTSC, G = 2, R Differential Phase Error NTSC, G = 2, R

INPUT CHARACTERISTICS

Offset Voltage (RTI) V T Input Bias Current 3 7 μA Input Resistance Differential 12 MΩ Common mode 3.5 MΩ Input Capacitance 1 pF Input Common-Mode Voltage −4.7 to +3.0 V CMRR ΔV

OUTPUT CHARACTERISTICS

Output Voltage Swing Maximum ΔV Output Current +70 mA Output Balance Error ΔV

= 0 V, G = 1, R

OCM

= 499 Ω, RF = RG = 348 Ω, unless otherwise noted. For G = 2, R

L, dm

= 2 V p-p 300 350 MHz

OUT

= 2 V p-p, G = 2 190 MHz

OUT

= 0.2 V p-p 360 MHz

OUT

= 0.2 V p-p, G = 2 160 MHz

OUT

= 0.2 V p-p 90 MHz

OUT

= 0.2 V p-p, G = 2 50 MHz

OUT

= 2 V p-p 1000 1200 V/μs

OUT

= 2 V p-p 15 ns

OUT

= 2 V p-p, 1 MHz, R

OUT

= 2 V p-p, 5 MHz, R

OUT

= 2 V p-p, 20 MHz, R

OUT

= 2 V p-p, 1 MHz, R

OUT

= 2 V p-p, 5 MHz, R

OUT

= 2 V p-p, 20 MHz, R

OUT

= 800 Ω −76 dBc

L, dm

= 800 Ω 40 dBm

L, dm

OS, dm

MIN

OUT, dm

OUT, cm

= V

to T

/2; V

OUT, dm

variation 10 μV/°C

MAX

/ΔV

; ΔV

IN, cm

; single-ended output −3.6 to +3.6 V

OUT

/ΔV

OUT, dm

= 150 Ω 0.01 % = 150 Ω 0.10 Degrees

; ΔV

= 800 Ω −96 dBc

L, dm

= 800 Ω −83 dBc

L, dm

= 800 Ω −73 dBc

L, dm

= 800 Ω −102 dBc

L, dm

= 800 Ω −98 dBc

L, dm

= 800 Ω −67 dBc

L, dm

= V

DIN+

DIN−

= ±1 V; resistors matched to 0.01% −70 −60 dB

IN, cm

= 1 V −70 dB

OUT, dm

= 0 V ±1.0 ±3.5 mV

OCM

= 200 Ω, RF = 1000 Ω,

L, dm

Rev. F | Page 3 of 32

AD8132

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V

TO ±OUT SPECIFICATIONS

OCM

At TA = 25°C, VS = ±5 V, V

= 499 Ω. Refer to Figure 56 and Figure 57 for test setup and label descriptions. All specifications refer to single-ended input and

R

G

differential outputs, unless otherwise noted.

Table 2.

Parameter Conditions Min Typ Max Unit

DYNAMIC PERFORMANCE

−3 dB Bandwidth ΔV

Slew Rate ΔV

Input Voltage Noise (RTI) f = 0.1 MHz to 100 MHz 12 nV/√Hz DC PERFORMANCE

Input Voltage Range ±3.6 V

Input Resistance 50 kΩ

Input Offset Voltage V

Input Bias Current 0.5 μA

V

CMRR ΔV

OCM

Gain ΔV POWER SUPPLY

Operating Range ±1.35 ±5.5 V

Quiescent Current V

T

Power Supply Rejection Ratio ΔV OPERATING TEMPERATURE RANGE −40 +125 °C

= 0 V, G = 1, R

OCM

= 499 Ω, RF = RG = 348 Ω, unless otherwise noted. For G = 2, R

L, dm

= 600 mV p-p 210 MHz

OCM

= −1 V to +1 V 400 V/μs

OCM

OS, cm

OUT, dm

OUT, cm

DIN+

MIN

OUT, dm

= V

to T

; V

= V

OUT, cm

DIN+

DIN−

/ΔV

; ΔV

OCM

/ΔV

OCM

= V

DIN−

variation 16 μA/°C

MAX

= ±1 V; resistors matched to 0.01% −68 dB

OCM

; ΔV

= ±1 V 0.985 1 1.015 V/V

OCM

= 0 V 11 12 13 mA

OCM

= 0 V ±1.5 ±7 mV

OCM

/ΔVS; ΔVS = ±1 V −70 −60 dB

= 200 Ω, RF = 1000 Ω,

L, dm

Rev. F | Page 4 of 32

AD8132

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±DIN TO ±OUT SPECIFICATIONS

At TA = 25°C, VS = 5 V, V

= 499 Ω. Refer to Figure 56 and Figure 57 for test setup and label descriptions. All specifications refer to single-ended input and

R

G

differential outputs, unless otherwise noted.

Table 3.

Parameter Conditions Min Typ Max Unit

DYNAMIC PERFORMANCE

−3 dB Large Signal Bandwidth V V

−3 dB Small Signal Bandwidth V V Bandwidth for 0.1 dB Flatness V V Slew Rate V Settling Time 0.1%, V Overdrive Recovery Time VIN = 2.5 V to 0 V step, G = 2 5 ns

NOISE/HARMONIC PERFORMANCE

Second Harmonic V V V Third Harmonic V V V IMD 20 MHz, R IP3 20 MHz, R Input Voltage Noise (RTI) f = 0.1 MHz to 100 MHz 8 nV/√Hz Input Current Noise f = 0.1 MHz to 100 MHz 1.8 pA/√Hz Differential Gain Error NTSC, G = 2, R Differential Phase Error NTSC, G = 2, R

INPUT CHARACTERISTICS

Offset Voltage (RTI) V T Input Bias Current 3 7 μA Input Resistance Differential 10 MΩ Common-mode 3 MΩ Input Capacitance 1 pF Input Common-Mode Voltage 0.3 to 3.0 V CMRR ΔV

OUTPUT CHARACTERISTICS

Output Voltage Swing Maximum ΔV Output Current 50 mA Output Balance Error ΔV

= 2.5 V, G = 1, R

OCM

= 499 Ω, RF = RG = 348 Ω, unless otherwise noted. For G = 2, R

L, dm

= 2 V p-p 250 300 MHz

OUT

= 2 V p-p, G = 2 180 MHz

OUT

= 0.2 V p-p 360 MHz

OUT

= 0.2 V p-p, G = 2 155 MHz

OUT

= 0.2 V p-p 65 MHz

OUT

= 0.2 V p-p, G = 2 50 MHz

OUT

= 2 V p-p 800 1000 V/μs

OUT

= 2 V p-p 20 ns

OUT

= 2 V p-p, 1 MHz, R

OUT

= 2 V p-p, 5 MHz, R

OUT

= 2 V p-p, 20 MHz, R

OUT

= 2 V p-p, 1 MHz, R

OUT

= 2 V p-p, 5 MHz, R

OUT

= 2 V p-p, 20 MHz, R

OUT

= 800 Ω −76 dBc

L, dm

= 800 Ω 40 dBm

L, dm

OS, dm

MIN

OUT, dm

OUT, cm

= V

to T

/2; V

OUT, dm

variation 6 μV/°C

MAX

/ΔV

; ΔV

IN, cm

; single-ended output 1.0 to 4.0 V

OUT

/ΔV

OUT, dm

= 150 Ω 0.025 % = 150 Ω 0.15 Degrees

; ΔV

= 800 Ω −97 dBc

L, dm

= 800 Ω −100 dBc

L, dm

= 800 Ω −74 dBc

L, dm

= 800 Ω −100 dBc

L, dm

= 800 Ω −99 dBc

L, dm

= 800 Ω −67 dBc

L, dm

= V

DIN+

DIN−

= ±1 V; resistors matched to 0.01% −70 −60 dB

IN, cm

= 1 V −68 dB

OUT, dm

= 2.5 V ±1.0 ±3.5 mV

OCM

= 200 Ω, RF = 1000 Ω,

L, dm

Rev. F | Page 5 of 32

AD8132

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V

TO ±OUT SPECIFICATIONS

OCM

At TA = 25°C, VS = 5 V, V

= 499 Ω. Refer to Figure 56 and Figure 57 for test setup and label descriptions. All specifications refer to single-ended input and

R

G

differential outputs, unless otherwise noted.

Table 4.

Parameter Conditions Min Typ Max Unit

DYNAMIC PERFORMANCE

−3 dB Bandwidth ΔV

Slew Rate ΔV

Input Voltage Noise (RTI) f = 0.1 MHz to 100 MHz 12 nV/√Hz DC PERFORMANCE

Input Voltage Range 1.0 to 3.7 V

Input Resistance 30 kΩ

Input Offset Voltage V

Input Bias Current 0.5 μA

V

CMRR ΔV

OCM

Gain ΔV POWER SUPPLY

Operating Range 2.7 11 V

Quiescent Current V

T

Power Supply Rejection Ratio ΔV OPERATING TEMPERATURE RANGE −40 +125 °C

= 2.5 V, G = 1, R

OCM

= 499 Ω, RF = RG = 348 Ω, unless otherwise noted. For G = 2, R

L, dm

= 600 mV p-p 210 MHz

OCM

= 1.5 V to 3.5 V 340 V/μs

OCM

OS, cm

OUT, dm

OUT, cm

DIN+

MIN

OUT, dm

= V

to T

; V

= V

OUT, cm

DIN+

DIN−

/ΔV

; ΔV

OCM

/ΔV

OCM

= V

DIN−

variation 10 μA/°C

MAX

= 2.5 V ±1 V; resistors matched to 0.01% −66 dB

OCM

; ΔV

= 2.5 V ±1 V 0.985 1 1.015 V/V

OCM

= 2.5 V 9.4 10.7 12 mA

OCM

= 2.5 V ±5 ±11 mV

OCM

/ΔVS; ΔVS = ±1 V −70 −60 dB

= 200 Ω, RF = 1000 Ω,

L, dm

Rev. F | Page 6 of 32

AD8132

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±DIN TO ±OUT SPECIFICATIONS

At TA = 25°C, VS = 3 V, V

= 499 Ω. Refer to Figure 56 and Figure 57 for test setup and label descriptions. All specifications refer to single-ended input and

R

G

differential outputs, unless otherwise noted.

Table 5.

Parameter Conditions Min Typ Max Unit

DYNAMIC PERFORMANCE

−3 dB Large Signal Bandwidth V V

−3 dB Small Signal Bandwidth V V Bandwidth for 0.1 dB Flatness V V

NOISE/HARMONIC PERFORMANCE

Second Harmonic V V V Third Harmonic V V V

INPUT CHARACTERISTICS

Offset Voltage (RTI) V Input Bias Current 3 μA Input Common-Mode Voltage 0.3 to 1.0 V CMRR ΔV

= 1.5 V, G = 1, R

OCM

= 499 Ω, RF = RG = 348 Ω, unless otherwise noted. For G = 2, R

L, dm

= 1 V p-p 350 MHz

OUT

= 1 V p-p, G = 2 165 MHz

OUT

= 0.2 V p-p 350 MHz

OUT

= 0.2 V p-p, G = 2 150 MHz

OUT

= 0.2 V p-p 45 MHz

OUT

= 0.2 V p-p, G = 2 50 MHz

OUT

= 1 V p-p, 1 MHz, R

OUT

= 1 V p-p, 5 MHz, R

OUT

= 1 V p-p, 20 MHz, R

OUT

= 1 V p-p, 1 MHz, R

OUT

= 1 V p-p, 5 MHz, R

OUT

= 1 V p-p, 20 MHz, R

OUT

OS, dm

OUT, dm

= V

OUT, dm

/ΔV

IN, cm

/2; V

; ΔV

= 800 Ω −100 dBc

L, dm

= 800 Ω −94 dBc

L, dm

= 800 Ω −77 dBc

L, dm

= 800 Ω −90 dBc

L, dm

= 800 Ω −85 dBc

L, dm

= 800 Ω −66 dBc

L, dm

= V

DIN+

DIN−

= ±0.5 V; resistors matched to 0.01% −60 dB

IN, cm

= 1.5 V ±10 mV

OCM

= 200 Ω, RF = 1000 Ω,

L, dm

V

TO ±OUT SPECIFICATIONS

OCM

At TA = 25°C, VS = 3 V, V

= 499 Ω. Refer to Figure 56 and Figure 57 for test setup and label descriptions. All specifications refer to single-ended input and

R

G

= 1.5 V, G = 1, R

OCM

= 499 Ω, RF = RG = 348 Ω, unless otherwise noted. For G = 2, R

L, dm

= 200 Ω, RF = 1000 Ω,

L, dm

differential outputs, unless otherwise noted.

Table 6.

Parameter Conditions Min Typ Max Unit

DC PERFORMANCE

Input Offset Voltage V Gain ΔV

OS, cm

OUT, cm

= V

OUT, cm

/ΔV

OCM

; V

= V

DIN+

DIN−

; ΔV

= ±0.5 V 1 V/V

OCM

= 1.5 V ±7 mV

OCM

POWER SUPPLY

Operating Range 2.7 11 V Quiescent Current V Power Supply Rejection Ratio ΔV

= V

DIN+

DIN−

/ΔVS; ΔVS = ±0.5 V −70 dB

OUT, dm

= 0 V 7.25 mA

OCM

OPERATING TEMPERATURE RANGE −40 +125 °C

Rev. F | Page 7 of 32

AD8132

A

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ABSOLUTE MAXIMUM RATINGS

Table 7.

Parameter Rating

Supply Voltage ±5.5 V V

±VS

OCM

Internal Power Dissipation 250 mW Operating Temperature Range −40°C to +125°C Storage Temperature Range −65°C to +150°C Lead Temperature (Soldering 10 sec) 300°C Junction Temperature 150°C

Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

THERMAL RESISTANCE

θJA is specified for the worst-case conditions, that is, θJA is specified for the device soldered in a circuit board in still air.

Table 8.

Package Type θJA Unit

8-Lead SOIC/4-Layer 121 °C/W 8-Lead MSOP/4-Layer 142 °C/W

Maximum Power Dissipation

The maximum safe power dissipation in the AD8132 packages is limited by the associated rise in junction temperature (T the die. At approximately 150°C (the glass transition temperature), the plastic changes its properties. Even temporarily exceeding this temperature limit can change the stresses that the package exerts on the die, permanently shifting the parametric performance of the AD8132. Exceeding a junction temperature of 150°C for an extended period can result in changes in the silicon devices, potentially causing failure.

) on

J

The power dissipated in the package (P

) is the sum of the

D

quiescent power dissipation and the power dissipated in the package due to the load drive for all outputs. The quiescent power is the voltage between the supply pins (V quiescent current (I

). The load current consists of the dif-

S

) times the

S

ferential and common-mode currents flowing to the load, as well as currents flowing through the external feedback networks and the internal common-mode feedback loop. The internal resistor tap used in the common-mode feedback loop places a 1 kΩ differential load on the output. Consider rms voltages and currents when dealing with ac signals.

Airflow reduces θ

. In addition, more metal directly in contact

JA

with the package leads from metal traces through holes, ground, and power planes reduces the θ

.

JA

Figure 3 shows the maximum safe power dissipation in the package vs. the ambient temperature for the 8-lead SOIC_N

= 121°C/W) and MSOP (θJA = 142°C/W) packages on a

(θ

JA

JEDEC standard 4-layer board. θ

1.75

1.50

1.25

TION (W)

1.00

0.75

0.50

MAXIMUM POWER DISSIP

0.25

0

–40 –30 –20 –10 0 10 20 30 40 50 60 70 80 90 100 110 120

Figure 3. Maximum Power Dissipation vs. Temperature

AMBIENT TEM PERATURE (°C)

values are approximations.

JA

SOIC

MSOP

01035-082

ESD CAUTION

Rev. F | Page 8 of 32

AD8132

T

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PIN CONFIGURATION AND FUNCTION DESCRIPTIONS

AD8132

–IN

1

2

V

OCM

3

V+

+OU

4

NC = NO CONNECT

Figure 4. Pin Configuration

Table 9. Pin Function Descriptions

Pin No. Mnemonic Description

1 −IN Negative Input. 2 V

OCM

Voltage applied to this pin sets the common-mode output voltage with a ratio of 1:1. For example, 1 V dc on V

sets the dc bias level on +OUT and −OUT to 1 V.

OCM

3 V+ Positive Supply Voltage. 4 +OUT Positive Output. Note that the voltage at −DIN is inverted at +OUT (see Figure 64). 5 −OUT Negative Output. Note that the voltage at +DIN is inverted at −OUT (see Figure 64). 6 V− Negative Supply Voltage. 7 NC No Connect. 8 +IN Positive Input.

+IN

8

7

NC

6

V–

–OUT

5

01035-004

Rev. F | Page 9 of 32

AD8132

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TYPICAL PERFORMANCE CHARACTERISTICS

2

1

0

–1

–2

GAIN (dB)

–3

G = +1

= 0.2V p-p

V

O, dm

R

= 499Ω

L, dm

–4

VS = +3V

VS = ±5V

VS = +5V

3

2

1

0

–1

GAIN (dB)

–2

G = +1 V

= 2V p-p FOR VS = ±5V, +5V

O, dm

–3

V

= 1V p-p FOR VS = +3V

O, dm

R

= 499Ω

L, dm

–4

VS = +3V

VS = +5V

VS = +3V

VS = ±5V

–5

1

10 100 1k

FREQUENCY (MHz)

Figure 5. Small Signal Frequency Response (See Figure 56)

0.5 G = +1

GAIN (dB)

0.4

0.3

0.2

0.1

0

–0.1

–0.2

–0.3

–0.4

–0.5

= 0.2V p-p

V

O, dm

= 499Ω

R

L, dm

VS = ±5V

1 10 100 1k

FREQUE NCY (MHz)

Figure 6. 0.1 dB Flatness vs. Frequency; C

0.2

0.1

0

–0.1

–0.2

GAIN (dB)

–0.3

G = +1 V

= 0.2V p-p

O, dm

R

–0.4

–0.5

= 499Ω

L, dm

1 10 100 1k

VS = +3V

VS = ±5V

FREQUENCY ( MHz)

Figure 7. 0.1 dB Flatness vs. Frequency; C

VS = +3V

VS = +5V

= 0 pF (See Figure 56)

F

VS = +5V

= 0.5 pF (See Figure 56)

F

–5

01035-006

1 10 100 1k

Figure 8. Large Signal Frequency Response; C

2

1

0

–1

–2

GAIN (dB)

G = +1

–3

–4

–5

01035-007

= 2V p-p FOR VS = ±5V, +5V

V

O, dm

= 1V p-p FOR VS = +3V

V

O, dm

= 499Ω

R

L, dm

1101001k

Figure 9. Large Signal Frequency Response; C

3

2

1

0

–1

GAIN (dB)

–2

VS = ±5V G = +1

–3

–4

–5

01035-008

1101001k

V R

O, dm L, dm

= 2V p-p = 499Ω

FREQUE NCY (MHz)

VS = ±5V

VS = +3V

FREQUENCY (MHz)

= 0 pF (See Figure 56)

F

VS = +3V

VS = +5V

= 0.5 pF (See Figure 56)

F

+85°C

+25°C

–40°C

01035-009

01035-010

01035-011

Figure 10. Large Signal Frequency Response at Various Temperatures

(See Figure 56)

Rev. F | Page 10 of 32