The AD8067 Fast FET amp is a voltage feedback amplifier with
FET inputs offering wide bandwidth (54 MHz @ G = +10) and high
slew rate (640 V/µs). The AD8067 is fabricated in a proprietary,
dielectrically isolated eXtra Fast Complementary Bipolar process
(XFCB) that enables high speed, low power, and high performance
FET input amplifiers.
The AD8067 is designed to work in applications that require high
speed and low input bias current, such as fast photodiode
preamplifiers. As required by photodiode applications, the laser
trimmed AD8067 has excellent dc voltage offset (1.0 mV max)
and drift (15 µV/°C max).
Rev. 0
Information furnished by Analog Devices is believed to be accurate and reliable.
However, no responsibility is assumed by Analog Devices for its use, nor for any
infringements of patents or other rights of third parties that may result from its use.
Specifications subject to change without notice. No license is granted by implication
or otherwise under any patent or patent rights of Anal og Devices. Trademarks and
registered trademarks are the property of their respective companies.
Precision Fast FET
™
Op Amp
AD8067
CONNECTION DIAGRAM
SOT-23-5 (RT-5)
+V
V
1
OUT
2
–V
S
3
+IN
Figure 1. Connection Diagram (Top View)
The FET input bias current (5 pA max) and low voltage noise
(6.6 nV/√Hz) also contribute to making it appropriate for precision
applications. With a wide supply voltage range (5 V to 24 V) and
rail-to-rail output, the AD8067 is well suited to a variety of
applications that require wide dynamic range and low distortion.
The AD8067 amplifier consumes only 6.5 mA of supply current,
while capable of delivering 30 mA of load current and driving
capacitive loads of 100 pF. The AD8067 amplifier is available in a
SOT-23-5 package and is rated to operate over the industrial
temperature range, –40°C to +85°C.
Bandwidth for 0.1 dB Flatness
Output Overdrive Recovery Time
(Pos/Neg)
Slew Rate
Settling Time to 0.1%
V
O
= 2 V p-p
V
O
V
= 0.2 V p-p
O
= ±0.6 V
V
I
V
= 5 V Step
O
= 5 V Step
V
O
39 54 MHz
54 MHz
8 MHz
115/190 ns
500 640 V/µs
27 ns
fC = 1 MHz, 2 V p-p 95 dBc
fC = 1 MHz, 8 V p-p 84 dBc
fC = 5 MHz, 2 V p-p 82 dBc
= 1 MHz, 2 V p-p, RL = 150 Ω
f
C
72 dBc
NOISE/DISTORTION
PERFORMANCE
Spurious Free Dynamic Range (SFDR)
Input Voltage Noise f = 10 kHz 6.6 nV/√Hz
Input Current Noise f = 10 kHz 0.6 fA/√Hz
DC PERFORMANCE
Input Offset Voltage
Input Offset Voltage Drift
Input Bias Current
Input Offset Current
Open-Loop Gain
0.6 5 pA
to T
T
MIN
25 pA
MAX
0.2 1 pA
T
to T
MIN
V
O
1 pA
MAX
= ±3 V
0.2 1.0 mV
1 15 µV/°C
103 119 dB
Common-Mode Input Impedance 1000||1.5 GΩ||pF
INPUT
CHARACTERISTICS
OUTPUT
CHARACTERISTICS
Differential Input Impedance 1000||2.5 GΩ||pF
Input Common-Mode Voltage Range –5.0 2.0 V
Common-Mode Rejection Ratio (CMRR) V
Output Voltage Swing
= –1 V to +1 V –85 –106 dB
CM
RL = 1 kΩ –4.86 to +4.83
= 150 Ω
R
L
–4.92 to +4.92 V
–4.67 to +4.72 V
Output Current SFDR > 60 dBc, f = 1 MHz 30 mA
Short Circuit Current 105 mA
Capacitive Load Drive 30% over shoot 120 pF
Operating Range 5 24 V
POWER SUPPLY
Quiescent Current 6.5 6.8 mA
Power Supply Rejection Ratio (PSRR) –90 –109 dB
Bandwidth for 0.1 dB Flatness
Output Overdrive Recovery Time
(Pos/Neg)
Slew Rate
Settling Time to 0.1%
= 0.2 V p-p
O
= 2 V p-p
V
O
V
= 0.2 V p-p
O
= ±1.5 V 75/180 ns
V
I
V
= 5 V Step
O
= 5 V Step
V
O
39 54 MHz
53 MHz
8 MHz
500 640 V/µs
27 ns
fC = 1 MHz, 2 V p-p 92 dBc
fC = 1 MHz, 20 V p-p 84 dBc
fC = 5 MHz, 2 V p-p 74 dBc
fC = 1 MHz, 2V p-p, RL = 150 Ω 72 dBc
NOISE/DISTORTION
PERFORMANCE
Spurious Free Dynamic Range (SFDR)
Input Voltage Noise f = 10 kHz 6.6 nV/√Hz
Input Current Noise f = 10 kHz 0.6 fA/√Hz
DC PERFORMANCE
Input Offset Voltage
Input Offset Voltage Drift
Input Bias Current
Input Offset Current
Open-Loop Gain
1.0 5 pA
to T
T
MIN
25 pA
MAX
0.2 1 pA
to T
T
MIN
V
O
pA
MAX
= ±10 V
0.2 1.0 mV
1 15 µV/°C
107 119 dB
Common-Mode Input Impedance 1000||1.5 GΩ||pF
INPUT
CHARACTERISTICS
OUTPUT
CHARACTERISTICS
Differential Input Impedance 1000||2.5 GΩ||pF
Input Common-Mode Voltage Range –12.0 9.0 V
Common-Mode Rejection Ratio (CMRR) V
Output Voltage Swing
= –1 V to +1 V –89 –108 dB
CM
RL = 1 kΩ –11.70 to +11.70
= 500 Ω
R
L
–11.85 to +11.84 V
–11.31 to +11.73 V
Output Current SFDR > 60 dBc, f = 1 MHz 26 mA
Short Circuit Current 125 mA
Capacitive Load Drive 30% over shoot 120 pF
Operating Range 5 24 V
POWER SUPPLY
Quiescent Current 6.6 7.0 mA
Power Supply Rejection Ratio (PSRR) –86 –97 dB
Rev. 0 | Page 6 of 24
AD8067
ABSOLUTE MAXIMUM RATINGS
Parameter Rating
Supply Voltage 26.4 V
Power Dissipation See Figure 3
Common-Mode Input Voltage VEE – 0.5 V to VCC + 0.5 V
Differential Input Voltage 1.8 V
Storage Temperature –65°C to +125°C
Operating Temperature Range –40°C to +85°C
Lead Temperature Range
300°C
(Soldering 10 sec)
Junction Temperature 150°C
Stresses above those listed under Absolute Maximum Ratings may cause
permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those
indicated in the operational section of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may
affect device reliability.
Maximum Power Dissipation
The associated raise in junction temperature (TJ) on the die limits
the maximum safe power dissipation in the AD8067 package. At
approximately 150°C, which is the glass transition temperature, the
plastic will change its properties. Even temporarily exceeding this
temperature limit may change the stresses that the package exerts
on the die, permanently shifting the parametric performance of the
AD8067. Exceeding a junction temperature of 175°C for an
extended period of time can result in changes in the silicon devices,
potentially causing failure.
If the RMS signal levels are indeterminate, then consider the worst
V
case, when
In single-supply operation with RL referenced to V
V
= VS/2.
OUT
Airflow will increase heat dissipation effectively, reducing θ
= VS/4 for RL to midsupply:
OUT
()
IVP
SSD
2
()
/V
4
S
+×=
R
L
, worst case is
S–
. In
JA
addition, more metal directly in contact with the package leads
from metal traces, through holes, ground, and power planes will
reduce the θ
.
JA
Figure 3 shows the maximum safe power dissipation in the package versus ambient temperature for the SOT-23-5 (180°C/W)
package on a JEDEC standard 4-layer board. θ
values are
JA
approximations.
It should be noted that for every 10°C rise in temperature, I
B
approximately doubles (See Figure 22).
2.0
1.5
The power dissipated in the package (P
) is the sum of the
D
quiescent power dissipation and the power dissipated in the
package due to the load drive. The quiescent power is the voltage
between the supply pins (V
) times the quiescent current (IS).
S
Assuming the load (RL) is referenced to midsupply, the total drive
power is V
and some in the load (V
/2 × I
S
, some of which is dissipated in the package
OUT
× I
OUT
). The difference between the
OUT
total drive power and the load power is the drive power dissipated
in the package. RMS output voltages should be considered.
D
If RL is referenced to V
total drive power is
V
()
+=
()
S
IVP
SSD
2
as in single-supply operation, then the
S–
× I
.
OUT
VV
×+×=
V
OUTS
R
OUT
–
L
PowerLoad–PowerDriveTotalPowerQuiescentP
2
R
L
1.0
SOT-23-5
0.5
MAXIMUM POWER DISSAPATION– W
0
–30 –20 –108010 20 30 40 50 60 70
–40
Figure 3. Maximum Power Dissipation vs. Temperature for a 4-Layer Board
0
AMBIENT TEMPERATURE – °C
Rev. 0 | Page 7 of 24
AD8067
TYPICAL PERFORMANCE CHARACTERISTICS
Default Conditions VS = ±5 V (@ TA = +25°C, G = +10, RL = RF = 1 kΩ, Unless Otherwise Noted.)
28
G = +20
26
24
22
G = +10
20
G = +8
18
G = +6
GAIN – dB
16
14
12
10
8
110100
FREQUENCY – MHz
V
= 200mV p-p
OUT
Figure 4. Small Signal Frequency Response for Various Gains
22
V
= 200mV p-p
OUT
21
20
19
18
GAIN – dB
17
16
15
14
110100
FREQUENCY – MHz
V
= +5V
S
VS = ±12V
V
= ±5V
S
Figure 5. Small Signal Frequency Response for Various Supplies
22
V
= 2V p-p
OUT
21
20
19
18
GAIN – dB
17
16
15
14
110100
FREQUENCY – MHz
V
= +5V
S
VS = ±12V
V
= ±5V
S
Figure 6. Large Signal Frequency Response for Various Supplies
20.7
20.6
20.5
20.4
20.3
20.2
GAIN – dB
20.1
20.0
19.9
19.8
110100
V
OUT
V
= 0.7V p-p
OUT
= 1.4V p-p
V
OUT
FREQUENCY – MHz
Figure 7. 0.1 dB Flatness Frequency Response
24
V
= 200mV p-p
OUT
23
22
21
20
19
GAIN – dB
18
17
16
15
14
110100
FREQUENCY – MHz
Figure 8. Small Signal Frequency Response for Various C
22
21
20
19
18
GAIN – dB
17
16
15
14
110100
FREQUENCY – MHz
Figure 9. Frequency Response for Various Output Amplitudes
= 0.2V p-p
CL = 25pF
CL = 100pF
R
SNUB
V
V
= 4V p-p
OUT
CL = 100pF
= 24.9Ω
CL = 5pF
= 0.2V p-p, 2V p-p
OUT
LOAD
Rev. 0 | Page 8 of 24
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