Analog Devices AD8063, AD8062, AD8061 Datasheet

Low-Cost, 300 MHz
8
7
6
5
1
2
3
4
NC –IN +IN
DISABLE
(AD8063 ONLY)
+V
S
V
OUT
NC–V
S
AD8061/ AD8063
NC = NO CONNECT
(Not to Scale)
a
FEATURES Low Cost Single (AD8061), Dual (AD8062) Single with Disable (AD8063) Rail-to-Rail Output Swing
6 mV V
High Speed
300 MHz, –3 dB Bandwidth (G = 1) 800 V/s Slew Rate
8.5 nV/Hz @ 5 V
35 ns Settling Time to 0.1% with 1 V Step
Operates on 2.7 V to 8 V Supplies
Input Voltage Range = –0.2 V to +3.2 V with V
Excellent Video Specs (R
Gain Flatness 0.1 dB to 30 MHz
0.01% Differential Gain Error
0.04 Differential Phase Error 35 ns Overload Recovery
Low Power
6.8 mA/Amplifier Typical Supply Current AD8063 400 A when Disabled
Small Packaging
AD8061 Available in SOIC-8 and SOT-23-5 AD8062 Available in SOIC-8 and SOIC AD8063 Available in SOIC-8 and SOT-23-6
APPLICATIONS Imaging Photodiode Preamp Professional Video and Cameras Hand Sets DVD/CD Base Stations Filters A-to-D Driver
PRODUCT DESCRIPTION
The AD8061, AD8062, and AD8063 are rail-to-rail output volt­age feedback amplifiers offering ease of use and low cost. They have bandwidth and slew rate typically found in current feed­back amplifiers. All have a wide input common-mode voltage range and output voltage swing, making them easy to use on single supplies as low as 2.7 V.
Despite being low cost, the AD8061, AD8062, and AD8063 provide excellent overall performance. For video applications
their differential gain and phase errors are 0.01% and 0.04° into a 150 load, along with 0.1 dB flatness out to 30 MHz.
Additionally, they offer wide bandwidth to 300 MHz along
with 800 V/µs slew rate.
OS
= 150 , G = 2)
L
= 5
S
Rail-to-Rail Amplifiers
AD8061/AD8062/AD8063
CONNECTION DIAGRAMS
(Top Views)
SOIC-8 (R) SOT-23-6 (RT)
AD8063
1
2
S
3
(Not to Scale)
SOT-23-5 (RT)
AD8061
1
2
S
3
(Not to Scale)
SOIC-8 (R) and SOIC (RM)
1
2
3
4
(Not to Scale)
AD8062
+V
8
S
V
7
OUT2
–IN2
6
+IN2
5
V
OUT1
–IN1
+IN1
–V
S
V
OUT
–V
+IN
V
OUT
–V
+IN
The AD8061, AD8062, and AD8063 offer a typical low power of 6.8 mA/amplifier, while being capable of delivering up to 50 mA of load current. The AD8063 has a power-down disable
feature that reduces the supply current to 400 µA. These features
make the AD8063 ideal for portable and battery-powered applications where size and power is critical.
3
0
VO = 0.2V p-p
= 1kV
R
L
= 1V
V
BIAS
–3
–6
IN
NORMALIZED GAIN – dB
–9
–12
1
50V
6
V
BIAS
R
F
OUT
R
L
FREQUENCY – MHz
RF = 0V
RF = 50V
10010
Figure 1. Small Signal Response, RF = 0 Ω, 50
6
5
4
5
4
1000
+V
S
DISABLE
–IN
+V
S
–IN
REV. A
Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781/329-4700 World Wide Web Site: http://www.analog.com Fax: 781/326-8703 © Analog Devices, Inc., 2000
(TA = 25C, VS = 5 V, RL = 1 k, VO = 1 V,
AD8061/AD8062/AD8063–SPECIFICATIONS
Parameter Conditions Min Typ Max Unit
DYNAMIC PERFORMANCE
–3 dB Small Signal Bandwidth G = 1, VO = 0.2 V p-p 150 320 MHz
G = –1, +2, V –3 dB Large Signal Bandwidth G = 1, V Bandwidth for 0.1 dB Flatness G = 1, V Slew Rate G = 1, V
G = 2, V Settling Time to 0.1% G = 2, VO = 2 V Step 35 ns
NOISE/DISTORTION PERFORMANCE
Total Harmonic Distortion fC = 5 MHz, VO = 2 V p-p, R
f
= 20 MHz, VO = 2 V p-p, R
C
Crosstalk, Output to Output f = 5 MHz, G = 2, AD8062 –90 dBc
Input Voltage Noise f = 100 kHz 8.5 nV/Hz Input Current Noise f = 100 kHz 1.2 pA/Hz
Differential Gain Error (NTSC) G = 2, R Differential Phase Error (NTSC) G = 2, R Third Order Intercept f = 10 MHz 28 dBc SFDR f = 5 MHz 62 dB
DC PERFORMANCE
Input Offset Voltage 16mV
to T
T
MIN
Input Offset Voltage Drift 3.5 µV/°C Input Bias Current 3.5 9 µA
to T
T
MIN
Input Offset Current 0.3 4.5 ±µA
Open-Loop Gain VO = 0.5 V to 4.5 V, R
VO = 0.5 V to 4.5 V, R
INPUT CHARACTERISTICS
Input Resistance 13 M
Input Capacitance 1pF Input Common-Mode Voltage Range –0.2 to +3.2 V Common-Mode Rejection Ratio VCM = –0.2 V to +3.2 V 62 80 dB
OUTPUT CHARACTERISTICS
Output Voltage Swing—Load Resistance R
Is Terminated at Midsupply R Output Current V Capacitive Load Drive, V
= 0.8 V 30% Overshoot: G = 1, R
OUT
= 150 0.3 0.1 to 4.5 4.75 V
L
= 2␣ k 0.25 0.1 to 4.9 4.85 V
L
= 0.5 V to 4.5 V 25 50 mA
O
G = 2, R
POWER-DOWN DISABLE
Turn-On Time 40 ns Turn-Off Time 300 ns
DISABLE Voltage—Off 2.8 V DISABLE Voltage—On 3.2 V
POWER SUPPLY
Operating Range 2.7 5 8 V Quiescent Current per Amplifier 6.8 9.5 mA Supply Current when Disabled 0.4 mA
(AD8063 Only)
Power Supply Rejection Ratio ∆V
Specifications subject to change without notice.
= 2.7 V to 5 V 72 80 dB
S
= 0.2 V p-p 60 115 MHz
O
= 1 V p-p 280 MHz
O
= 0.2 V p-p 30 MHz
O
= 2 V Step, R
O
= 2 V Step, R
O
= 150 0.01 %
L
= 150 0.04 Degree
L
MAX
MAX
= 2 k 500 650 V/µs
L
= 2 k 300 500 V/µs
L
= 1 k –77 dBc
L
= 1 k –50 dBc
L
= 150 68 70 dB
L
= 2 k 74 90 dB
L
= 0 25 pF
S
= 4.7 300 pF
S
unless otherwise noted)
26mV
49µA
–2–
REV. A
AD8061/AD8062/AD8063
SPECIFICATIONS
Parameter Conditions Min Typ Max Unit
DYNAMIC PERFORMANCE
–3 dB Small Signal Bandwidth G = 1, VO = 0.2 V p-p 150 300 MHz
–3 dB Large Signal Bandwidth G = 1, V Bandwidth for 0.1 dB Flatness G = 1, V Slew Rate G = 1, V
Settling Time to 0.1% G = 2, VO = 1 V Step 40 ns
NOISE/DISTORTION PERFORMANCE
Total Harmonic Distortion f
Crosstalk, Output to Output f = 5 MHz, G = 2 –90 dBc
Input Voltage Noise f = 100 kHz 8.5 nV/Hz Input Current Noise f = 100 kHz 1.2 pA/Hz
DC PERFORMANCE
Input Offset Voltage 16mV
Input Offset Voltage Drift 3.5 µV/°C Input Bias Current 3.5 8.5 µA
Input Offset Current 0.3 4.5 ±µA
Open-Loop Gain VO = 0.5 V to 2.5 V, R
INPUT CHARACTERISTICS
Input Resistance 13 M
Input Capacitance 1pF Input Common-Mode Voltage Range –0.2 to +1.2 V Common-Mode Rejection Ratio VCM = –0.2 V to +1.2 V 80 dB
OUTPUT CHARACTERISTICS
Output Voltage Swing R
Output Current V Capacitive Load Drive, V
POWER-DOWN DISABLE
Turn-On Time 40 ns Turn-Off Time 300 ns
DISABLE Voltage—Off 0.8 V DISABLE Voltage—On 1.2 V
POWER SUPPLY
Operating Range 2.7 3 V Quiescent Current per Amplifier 6.8 9 mA Supply Current when Disabled 0.4 mA
(AD8063 Only)
Power Supply Rejection Ratio 72 80 dB
OUT
(TA = 25C, VS = 3 V, RL = 1 k, VO = 1 V, unless otherwise noted)
G = –1, +2, V
G = 2, V
= 5 MHz, VO = 2 V p-p, R
C
= 20 MHz, VO = 2 V p-p, R
f
C
to T
T
MIN
to T
T
MIN
VO = 0.5 V to 2.5 V, R
= 150 0.3 0.1 to 2.87 2.85 V
L
= 2␣ k 0.3 0.1 to 2.9 2.90 V
R
L
= 0.5 V to 2.5 V 25 mA
O
= 0.8 V 30% Overshoot, G = 1, R
G = 2, R
= 0.2 V p-p 60 115 MHz
O
= 1 V p-p 250 MHz
O
= 0.2 V p-p 30 MHz
O
= 1 V Step, R
O
= 1.5 V Step, R
O
MAX
MAX
= 2 k 190 280 V/µs
L
= 2 k 180 230 V/µs
L
= 1 k –60 dBc
L
= 1 k –44 dBc
L
= 150 66 70 dB
L
= 2 k 74 90 dB
L
= 0 Ω,25 pF
S
= 4.7 300 pF
S
26mV
4 8.5 µA
Specifications subject to change without notice.
REV. A
–3–
(TA = 25C, VS = 2.7 V, RL = 1 k, VO = 1 V,
AD8061/AD8062/AD8063–SPECIFICATIONS
Parameter Conditions Min Typ Max Unit
DYNAMIC PERFORMANCE
–3 dB Small Signal Bandwidth G = 1, VO = 0.2 V p-p 150 300 MHz
G = –1, +2, V
G = 1, V Bandwidth for 0.1 dB Flatness G = 1, V Slew Rate G = 1, V
G = 2, V Settling Time to 0.1% G = 2, VO = 1 V Step 40 ns
NOISE/DISTORTION PERFORMANCE
Total Harmonic Distortion fC = 5 MHz, VO = 2 V p-p, R
f
= 20 MHz, VO = 2 V p-p, R
C
Crosstalk, Output to Output f = 5 MHz, G = 2 –90 dBc
Input Voltage Noise f = 100 kHz 8.5 nV/Hz Input Current Noise f = 100 kHz 1.2 pA/Hz
DC PERFORMANCE
Input Offset Voltage 16mV
to T
T
MIN
Input Offset Voltage Drift 3.5 µV/°C Input Bias Current 3.5 µA
to T
T
MIN
Input Offset Current 0.3 4.5 ±µA
Open-Loop Gain VO = 0.5 V to 2.2 V, R
VO = 0.5 V to 2.2 V, R
INPUT CHARACTERISTICS
Input Resistance 13 M
Input Capacitance 1pF Input Common-Mode Voltage Range –0.2 to +0.9 V Common-Mode Rejection Ratio VCM = –0.2 V to +0.9 V 80 dB
OUTPUT CHARACTERISTICS
Output Voltage Swing R
Output Current V Capacitive Load Drive, V
= 0.8 V 30% Overshoot: G = 1, R
OUT
= 150 0.3 0.1 to 2.55 2.55 V
L
R
= 2␣ k 0.25 0.1 to 2.6 2.6 V
L
= 0.5 V to 2.2 V 25 mA
O
G = 2, R
POWER-DOWN DISABLE
Turn-On Time 40 ns Turn-Off Time 300 ns
DISABLE Voltage—Off 0.5 V DISABLE Voltage—On 0.9 V
POWER SUPPLY
Operating Range 2.7 8 V Quiescent Current per Amplifier 6.8 8.5 mA Supply Current when Disabled 0.4 mA
(AD8063 Only)
Power Supply Rejection Ratio 80 dB
= 0.2 V p-p 60 115 MHz
O
= 1 V p-p 230 MHz
O
= 0.2 V p-p, VO DC = 1 V 30 MHz
O
= 0.7 V Step, R
O
= 1.5 V Step, R
O
MAX
MAX
= 2 k 110 150 V/µs
L
= 2 k 95 130 V/µs
L
= 1 k –60 dBc
L
= 1 k –44 dBc
L
= 150 63 70 dB
L
= 2 k 74 90 dB
L
= 0␣ Ω,25 pF
S
= 4.7␣ 300 pF
S
unless otherwise noted)
26mV
48.5µA
Specifications subject to change without notice.
–4–
REV. A
AD8061/AD8062/AD8063
ABSOLUTE MAXIMUM RATINGS
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 V
Internal Power Dissipation
2
1
Plastic Package (N) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.3 W
Small Outline Package (R) . . . . . . . . . . . . . . . . . . . . . . . 0.8 W
SOT-23-5 Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5 W
SOT-23-6 Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5 W
µSOIC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6 W
Input Voltage (Common-Mode) (–V
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . ±V
– 0.2 V) to (+VS – 1.8 V)
S
S
Output Short Circuit Duration
. . . . . . . . . . . . . . . . . . . . . . Observe Power Derating Curves
Storage Temperature Range R, RM, SOT-23-5,
SOT-23-6 . . . . . . . . . . . . . . . . . . . . . . . . –65°C to +125°C
Operating Temperature Range . . . . . . . . . . . –40°C to +85°C
Lead Temperature Range (Soldering 10 sec) . . . . . . . . 300°C
NOTES
1
Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
2
Specification is for device in free air:
8-Lead SOIC Package: θJA = 160°C/W; θJC = 56°C/W 5-Lead SOT-23-5 Package: θJA = 240°C/W; θJC = 92°C/W 6-Lead SOT-23-6 Package: θJA = 230°C/W; θJC = 92°C/W 8-Lead µSOIC Package: θJA = 200°C/W; θJC = 44°C/W.
MAXIMUM POWER DISSIPATION
The maximum power that can be safely dissipated by the AD806x is limited by the associated rise in junction temperature. The maximum safe junction temperature for plastic encapsulated devices is determined by the glass transition temperature of the
plastic, approximately 150°C. Temporarily exceeding this limit
may cause a shift in parametric performance due to a change in the stresses exerted on the die by the package. Exceeding a
junction temperature of 175°C for an extended period can result
in device failure. While the AD806x is internally short circuit protected, this may not be sufficient to guarantee that the
maximum junction temperature (150°C) is not exceeded under
all conditions.
To ensure proper operation, it is necessary to observe the maximum power derating curves.
2.0
8-LEAD SOIC
PACKAGE
1.5
1.0
0.5
mSOIC
MAXIMUM POWER DISSIPATION – Watts
0
–30
–50 –40
SOT-23-5, -6
AMBIENT TEMPERATURE – 8C
2010
TJ = 1508C
605040300–10–20
70 80
90
Figure 2. Plot of Maximum Power Dissipation vs. Temperature for AD8061/AD8062/AD8063
ORDERING GUIDE
Model Temperature Range Package Description Package Option
AD8061AR –40°C to +85°C 8-Lead SOIC R-8 AD8061ART –40°C to +85°C 5-Lead SOT-23-5 RT-5 AD8062AR –40°C to +85°C 8-Lead SOIC R-8 AD8062ARM –40°C to +85°C 8-Lead µSOIC RM-8 AD8063AR –40°C to +85°C 8-Lead SOIC R-8 AD8063ART –40°C to +85°C 6-Lead SOT-23-6 RT-6
AD806x-EB Evaluation Board for AD806xAR
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although
WARNING!
the AD8061/AD8062/AD8063 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.
ESD SENSITIVE DEVICE
REV. A
–5–
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