FEATURES
Low Cost Single (AD8057) and Dual (AD8058)
High Speed
325 MHz, –3 dB Bandwidth (G = +1)
1000 V/s Slew Rate
Gain Flatness 0.1 dB to 28 MHz
Low Noise
7 nV/√Hz
Low Power
5.4 mA/Amplifier Typical Supply Current @ +5 V
Low Distortion
–85 dBc @ 5 MHz, R
Wide Supply Range from 3 V to 12 V
Small Packaging
AD8057 Available in SOIC-8 and SOT-23-5
AD8058 Available in SOIC-8 and SOIC
APPLICATIONS
Imaging
DVD/CD
Photodiode Preamp
A-to-D Driver
Professional Cameras
Filters
= 1 k⍀
L
Voltage Feedback, 325 MHz Amplifiers
AD8057/AD8058
CONNECTION DIAGRAMS (TOP VIEWS)
SOT-23-5 (RT-5)
RM-8 (SOIC)
SO-8 (SOIC)
SO-8 (SOIC)
PRODUCT DESCRIPTION
The AD8057 (single) and AD8058 (dual) are very high performance amplifiers with a very low cost. The balance between
cost and performance make them ideal for many applications.
The AD8057 and AD8058 will reduce the need to qualify a
variety of specialty amplifiers.
The AD8057 and AD8058 are voltage feedback amplifiers with
the bandwidth and slew rate normally found in current feedback
amplifiers. The AD8057 and AD8058 are low power amplifiers
having low quiescent current and a wide supply range from 3 V
to 12 V. They have noise and distortion performance required
for high-end video systems as well as dc performance parameters rarely found in high speed amplifiers.
The AD8057 and AD8058 are available in standard SOIC
packaging as well as tiny SOT-23-5 (AD8057) and µSOIC
(AD8058). These amplifiers are available in the industrial tem-
perature range of –40°C to +85°C.
REV. A
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.
Storage Temperature Range (R) . . . . . . . . . –65°C to +125°C
Operating Temperature Range (A Grade) . . –40°C to +85°C
Lead Temperature Range (Soldering␣ 10␣ sec) . . . . . . . +300°C
NOTES
1
Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
The maximum power that can be safely dissipated by the
AD8057/AD8058 is limited by the associated rise in junction
temperature. Exceeding a junction temperature of +175°C for
an extended period can result in device failure. While the
AD8057/AD8058 is internally short circuit protected, this may
not be sufficient to guarantee that the maximum junction tem-
perature (+150°C) is not exceeded under all conditions.
To ensure proper operation, it is necessary to observe the maximum power derating curves.
Figure 2. Plot of Maximum Power Dissipation vs.
Temperature
ORDERING GUIDE
TemperaturePackagePackage
ModelRangeDescriptionsOptionsBrand Code
AD8057AR–40°C to +85°C8-Lead Narrow Body SOICSO-8Standard
AD8057ACHIPS–40°C to +85°CDieWaffle PakN/A
AD8057AR-REEL–40°C to +85°C8-Lead SOIC, 13" ReelSO-8Standard
AD8057AR-REEL7–40°C to +85°C8-Lead SOIC, 7" ReelSO-8Standard
AD8057ART-REEL–40°C to +85°C5-Lead SOT-23, 13" ReelRT-5H7A
AD8057ART-REEL7–40°C to +85°C5-Lead SOT-23, 7" ReelRT-5H7A
AD8058AR–40°C to +85°C8-Lead Narrow Body SOICSO-8Standard
AD8058ACHIPS–40°C to +85°CDieWaffle PakN/A
AD8058AR-REEL–40°C to +85°C8-Lead SOIC, 13" ReelSO-8Standard
AD8058AR-REEL7–40°C to +85°C8-Lead SOIC, 7" ReelSO-8Standard
AD8058ARM–40°C to +85°C8-Lead µSOICRM-8H8A
AD8058ARM-REEL–40°C to +85°C8-Lead µSOIC, 13" ReelRM-8H8A
AD8058ARM-REEL7–40°C to +85°C8-Lead µSOIC, 7" ReelRM-8H8A
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AD8057/AD8058 feature proprietary ESD protection circuitry, permanent damage
may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
–4–REV. A
Typical Performance Characteristics–
–4085–30 –20 –10
0
10 20 30 40 50 60 70 80
TEMPERATURE – 8C
0.0
–3.5
–5.0
VOLTS
–0.5
–3.0
–4.0
–4.5
–1.5
–2.5
–1.0
–2.0
–5V SWING RL = 150V
–2.5V SWING RL = 150V
–1.5V SWING RL = 150V
TEMPERATURE – 8C
6
–2
–6
–40 –30
V
OS
– mV
–20 –10
0
10 20 30 40 50 60 70 80
–4
2
0
4
VOS @ 65V
V
OS
@ 61.5V
TEMPERATURE – 8C
3.5
1.5
0
–40 –30
A
VOL
– mV/V
–20 –10
0
10 20 30 40 50 60 70 80
0.5
2.5
2.0
3.0
A
VOL
@ 62.5V
A
VOL
@ 65V
85
1.0
4.5
(+) OUTPUT
4.0
VOLTAGE
3.5
3.0
2.5
2.0
1.5
OUTPUT VOLTAGE
1.0
0.5
0
10100k100
Figure 3. Output Swing vs. Load Resistance
–3.0
–3.5
–4.0
–4.5
–5.0
– mA
–5.5
SUPPLY
–6.0
–I
–6.5
–7.0
–7.5
–8.0
–4085–30 –20 –10
Figure 4. –I
ABS (–)
OUTPUT
LOAD RESISTANCE – V
–I
SUPPLY
0
SUPPLY
1k10k
–I
@ 61.5V
SUPPLY
@ 65V
10 20 30 40 50 60 70 80
TEMPERATURE – C
vs. Temperature
AD8057/AD8058
Figure 6. Negative Output Voltage Swing vs.
Temperature
Figure 7. VOS vs. Temperature
5.0
4.5
4.0
3.5
3.0
2.5
VOLTS
2.0
1.5
1.0
0.5
0.0
Figure 5. Positive Output Voltage Swing vs.
Temperature
+5V SWING RL = 150V
+2.5V SWING RL = 150V
+1.5V SWING RL = 150V
–20 –10
–4085–30
10 20 30 40 50 60 70 80
0
TEMPERATURE – 8C
Figure 8. Open-Loop Gain vs. Temperature
–5–REV. A
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