Analog Devices AD8055, AD8056 Datasheet

Low Cost, 300 MHz

1

2

3

4

8

7

6

5

(Not to Scale)

AD8055

–IN

–V

S

+IN

+V

S

V

OUT

NC

NC

NC

NC = NO CONNECT

a

FEATURES
Low Cost Single (AD8055) and Dual (AD8056)
Easy to Use Voltage Feedback Architecture
High Speed

300 MHz, –3 dB Bandwidth (G = +1)
1400 V/␮s Slew Rate
20 ns Settling to 0.1%
Low Distortion: –72 dBc @ 10 MHz
Low Noise: 6 nV/√Hz
Low DC Errors: 5 mV Max V

Small Packaging

AD8055 Available in SOT-23-5
AD8056 Available in 8-Lead microSOIC

Excellent Video Specifications (R

Gain Flatness 0.1 dB to 40 MHz

0.01% Differential Gain Error

0.02ⴗ Differential Phase Error
Drives Four Video Loads (37.5 ⍀) with 0.02% and

0.1ⴗ Differential Gain and Differential Phase

Low Power, ⴞ5 V Supplies

5 mA Typ/Amplifier Power Supply Current

High Output Drive Current: Over 60 mA

APPLICATIONS
Imaging
Photodiode Preamp
Video Line Driver
Differential Line Driver
Professional Cameras
Video Switchers
Special Effects
A-to-D Driver
Active Filters

PRODUCT DESCRIPTION

The AD8055 (single) and AD8056 (dual) voltage feedback
amplifiers offer bandwidth and slew rate typically found in cur­rent feedback amplifiers. Additionally, these amplifiers are easy
to use and available at a very low cost.

Despite their low cost, the AD8055 and AD8056 provide excel­lent overall performance. For video applications, their differen­tial gain and phase error are 0.01% and 0.02° into a 150 Ω load,
and 0.02% and 0.1° while driving four video loads (37.5 Ω).
Their 0.1 dB flatness out to 40 MHz, wide bandwidth out to
300 MHz, along with 1400 V/µs slew rate and 20 ns settling
time, make them useful for a variety of high speed applications.

, 1.2 ␮A Max I

OS

= 150 ⍀, G = +2)

L

B

Voltage Feedback Amplifiers

AD8055/AD8056

FUNCTIONAL BLOCK DIAGRAMS

N-8 and SO-8

N-8, SO-8, microSOIC (RM)

AD8056

1

OUT1

2

–IN1

3

+IN1

4

–V

S

(Not to Scale)

The AD8055 and AD8056 require only 5 mA typ/amplifier of
supply current and operate on dual ±5 V or single +12 V power
supply, while being capable of delivering over 60 mA of load
current. All this is offered in a small 8-lead plastic DIP, 8-lead
SOIC packages, 5-lead SOT-23-5 package (AD8055) and an
8-lead microSOIC package (AD8056). These features make
the AD8055/AD8056 ideal for portable and battery powered
applications where size and power are critical. These amplifiers are
available in the industrial temperature range of –40°C to +85°C.

5

R

4

3

2

1

0

GAIN – dB

–1

–2

–3

–4

–5

0.3M 1G

C

V

IN

50⍀

R

S

1M 10M 100M

R

F

G = +10

= 909⍀

R

F

G = +5

= 1000⍀

R

F

FREQUENCY – Hz

V

OUT

R

L

Figure 1. Frequency Response

SOT-23-5 (RT)

1

V

OUT

–V

2

S

3

+IN

+V

8

S

7

OUT

–IN2

6

+IN2

5

V

OUT

= 100⍀

R

L

G = +1

= 0⍀

R

F

= 100⍀

R

C

AD8055

(Not to Scale)

= 100mV p-p

G = +2

= 402⍀

R

F

+V

5

S

–IN

4

REV. B

Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: [phone] World Wide Web Site: http://www.analog.com
Fax: [phone] © Analog Devices, Inc., 2000

(@ TA = +25ⴗC, VS = 65 V, RF = 402 ⍀, RL = 100 ⍀, Gain = +2,

AD8055/AD8056–SPECIFICATIONS

unless otherwise noted)

Model AD8055A/AD8056A

Conditions Min Typ Max Unit

DYNAMIC PERFORMANCE

–3 dB Bandwidth G = +1, V

G = +1, V
G = +2, V
G = +2, V

Bandwidth for 0.1 dB Flatness V

= 100 mV p-p 25 40 MHz

O

Slew Rate G = +1, V

G = +2, V
Settling Time to 0.1% G = +2, V
Rise and Fall Time, 10% to 90% G = +1, V

G = +1, V

G = +2, V

= 0.1 V p-p 220 300 MHz

O

= 2 V p-p 125 150 MHz

O

= 0.1 V p-p 120 160 MHz

O

= 2 V p-p 125 150 MHz

O

= 4 V Step 1000 1400 V/µs

O

= 4 V Step 750 840 V/µs

O

= 2 V Step 20 ns

O

= 0.5 V Step 2 ns

O

= 4 V Step 2.7 ns

O

= 0.5 V Step 2.8 ns

O

G = +2, VO = 4 V Step 4 ns

NOISE/HARMONIC PERFORMANCE

Total Harmonic Distortion fC = 10 MHz, VO = 2 V p-p, RL = 1 kΩ –72 dBc

= 20 MHz, VO = 2 V p-p, RL = 1 kΩ –57 dBc

f

C

Crosstalk, Output to Output (AD8056) f = 5 MHz, G = +2 –60 dB
Input Voltage Noise f = 100 kHz 6 nV/√Hz
Input Current Noise f = 100 kHz 1 pA/√Hz
Differential Gain Error NTSC, G = +2, R

NTSC, G = +2, R

Differential Phase Error NTSC, G = +2, R

= 150 Ω 0.01 %

L

= 37.5 Ω 0.02 %

L

= 150 Ω 0.02 Degree

L

NTSC, G = +2, RL = 37.5 Ω 0.1 Degree

DC PERFORMANCE

Input Offset Voltage 35 mV

T

MIN–TMAX

10 mV

Offset Drift 6 µV/°C
Input Bias Current 0.4 1.2 µA

1 µA

Open Loop Gain V

T

MIN–TMAX

= ±2.5 V 66 71 dB

O

T

MIN–TMAX

64 dB

INPUT CHARACTERISTICS

Input Resistance 10 MΩ
Input Capacitance 2pF
Input Common-Mode Voltage Range 3.2 ±V
Common-Mode Rejection Ratio VCM = ±2.5 V 82 dB

OUTPUT CHARACTERISTICS

Output Voltage Swing RL = 150 Ω 2.9 3.1 ±V
Output Current
Short Circuit Current

1

1

VO = ±2.0 V 55 60 mA

110 mA

POWER SUPPLY

Operating Range ±4.0 ±5.0 ±6.0 V
Quiescent Current AD8055 5.4 6.5 mA

T

MIN–TMAX

7.3 mA
AD8056 10 12 mA
T

Power Supply Rejection Ratio +V

MIN–TMAX

= +5 V to +6 V, –VS = –5 V 66 72 dB

S

13.3 mA

–VS = –5 V to –6 V, +VS = +5 V 69 86 dB

OPERATING TEMPERATURE RANGE –40 +85 °C

NOTES

1

Output current is limited by the maximum power dissipation in the package. See the power derating curves.

Specifications subject to change without notice.

–2–

REV. B

AD8055/AD8056

WARNING!

ESD SENSITIVE DEVICE

ABSOLUTE MAXIMUM RATINGS

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.2 V

Internal Power Dissipation

2

1

Plastic DIP Package (N) . . . . . . . . . . . . . . . . . . . . . . 1.3 W

Small Outline Package (R) . . . . . . . . . . . . . . . . . . . . . 0.8 W

SOT-23-5 Package (RT) . . . . . . . . . . . . . . . . . . . . . . 0.5 W

microSOIC Package (RM) . . . . . . . . . . . . . . . . . . . . . 0.6 W

Input Voltage (Common Mode) . . . . . . . . . . . . . . . . . . . ± V

S

Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . ±2.5 V

Output Short Circuit Duration

. . . . . . . . . . . . . . . . . . . . . . Observe Power Derating Curves

Storage Temperature Range N, R . . . . . . . . –65°C to +125°C

Operating Temperature Range (A Grade) . . –40°C to +85°C

Lead Temperature Range (Soldering 10 sec) . . . . . . . +300°C

NOTES

1

Stresses above those listed under Absolute Maximum Ratings may cause perma-

nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.

2

Specification is for device in free air:

8-Lead Plastic DIP Package: θJA = 90°C/W
8-Lead SOIC Package: θJA = 155°C/W
5-Lead SOT-23-5 Package: θJA = 240°C/W
8-Lead microSOIC Package: θJA = 200°C/W

MAXIMUM POWER DISSIPATION

The maximum power that can be safely dissipated by the AD8055/
AD8056 is limited by the associated rise in junction temperature.
The maximum safe junction temperature for plastic encapsu­lated devices is determined by the glass transition temperature

of the plastic, approximately +150°C. Exceeding this limit tem­porarily may cause a shift in parametric performance due to a
change in the stresses exerted on the die by the package. Exceeding
a junction temperature of +175°C for an extended period can
result in device failure.

While the AD8055/AD8056 are internally short circuit protected,
this may not be sufficient to guarantee that the maximum junc­tion temperature (+150°C) is not exceeded under all conditions.
To ensure proper operation, it is necessary to observe the maxi­mum power derating curves.

2.0

8-LEAD PLASTIC DIP PACKAGE

1.5

1.0

0.5

MAXIMUM POWER DISSIPATION – Watts

0

–50

–40 –30 –20 –100 102030405060708090

8-LEAD SOIC

PACKAGE

␮SOIC

SOT-23-5

AMBIENT TEMPERATURE – ⴗC

TJ = +150ⴗC

Figure 2. Plot of Maximum Power Dissipation vs.
Temperature for AD8055/AD8056

ORDERING GUIDE

Model Temperature Range Package Description Package Option Brand Code

AD8055AN –40°C to +85°C Plastic DIP N-8
AD8055AR –40°C to +85°C Small Outline Package (SOIC) SO-8
AD8055AR-REEL –40°C to +85°C 13" Tape and Reel SO-8
AD8055AR-REEL7 –40°C to +85°C 7" Tape and Reel SO-8
AD8055ART-REEL –40°C to +85°C 13" Tape and Reel RT-5 H3A
AD8055ART-REEL7 –40°C to +85°C 7" Tape and Reel RT-5 H3A

AD8056AN –40°C to +85°C Plastic DIP N-8
AD8056AR –40°C to +85°C Small Outline Package (SOIC) SO-8
AD8056AR-REEL –40°C to +85°C 13" Tape and Reel SO-8
AD8056AR-REEL7 –40°C to +85°C 7" Tape and Reel SO-8
AD8056ARM –40°C to +85°C microSOIC RM-8 H5A
AD8056ARM-REEL –40°C to +85°C 13" Tape and Reel RM-8 H5A
AD8056ARM-REEL7 –40°C to +85°C 7" Tape and Reel RM-8 H5A

CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AD8055/AD8056 features proprietary ESD protection circuitry, permanent dam­age may occur on devices subjected to high-energy electrostatic discharges. Therefore, proper
ESD precautions are recommended to avoid performance degradation or loss of functionality.

REV. B

–3–

AD8055/AD8056

HP8130A

PULSE

GENERATOR

= 1ns

T

R/TF

Figure 3. Test Circuit, G = +1, RL = 100

V

IN

50⍀

–Typical Performance Characteristics

4.7␮F

+V

S

0.01␮F

100⍀

3

AD8055

2

0.001␮F

7

4

–V

S

6

4.7␮F

0.01␮F

0.001␮F

V

OUT

100⍀

Ω

HP8130A

PULSE

GENERATOR

= 0.67ns

T

R/TF

Figure 6. Test Circuit, G = –1, RL = 100

402⍀

+V

4.7␮F

S

0.01␮F

0.001␮F

V

402⍀

IN

57⍀

2

AD8055

3

7

6

V

OUT

4

4.7␮F

0.01␮F

0.001␮F

–V

S

100⍀

Ω

Figure 4. Small Step Response, G = +1

Figure 5. Large Step Response, G = +1

Figure 7. Small Step Response, G = –1

Figure 8. Large Step Response, G = –1

–4–

REV. B