Low cost single (AD8055) and dual (AD8056)
Easy-to-use voltage feedback architecture
High speed
300 MHz, −3 dB bandwidth (G = +1)
1400 V/μs slew rate
20 ns settling to 0.1%
Low distortion: −72 dBc @ 10 MHz
Low noise: 6 nV/√Hz
Low dc errors: 5 mV max V
, 1.2 μA max I
OSB
Small packaging
AD8055 available in 5-lead SOT-23
AD8056 available in 8-lead MSOP
Excellent video specifications (R
= 150 Ω, G = +2)
L
Gain flatness 0.1 dB to 40 MHz
0.01% differential gain error
0.02° differential phase error
Drives 4 video loads (37.5 V) with 0.02% differential
Gain and 0.1° differential phase
Low power, ±5 V supplies 5 mA typ/amplifier power
supply current
High output drive current: over 60 mA
APPLICATIONS
Imaging
Photodiode preamps
Video line drivers
Differential line drivers
Professional cameras
Video switchers
Special effects
A-to-D drivers
Active filters
GENERAL DESCRIPTION
The AD8055 (single) and AD8056 (dual) voltage feedback
amplifiers offer bandwidth and slew rate typically found in
current feedback amplifiers. Additionally, these amplifiers are
easy to use and available at a very low cost.
Despite their low cost, the AD8055 and AD8056 provide
excellent overall performance. For video applications, their
differential gain and phase error are 0.01% and 0.02° into a
150 load and 0.02% and 0.1° while driving four video loads
(37.50 ).
1
+IN
NC
–IN
V
S
2
3
4
AD8055
NC = NO CO NNECT
8
NC
7
+V
S
6
V
OUT
5
NC
01063-001
1
OUT
2
–V
S
3
+IN
AD8055
Figure 1. N-8 and R-8 Figure 2. RJ-5
OUT1
–IN1
+IN1
–V
1
2
3
4
S
AD8056
8
+V
S
7
OUT
6
–IN2
5
+IN2
Figure 3. N-8, R-8, and RM-8
Their 0.1 dB flatness out to 40 MHz, wide bandwidth out to
300 MHz, along with 1400 V/µs slew rate and 20 ns settling
time, make them useful for a variety of high speed applications.
The AD8055 and AD8056 require only 5 mA typ/amplifier of
supply current and operate on a dual ±5 V or a single +12 V
power supply, while capable of delivering over 60 mA of load
current. The AD8055 is available in a small 8-lead PDIP, an 8-lead
SOIC, and a 5-lead SOT-23, while the AD8056 is available in an
8-lead MSOP. These features make the AD8055/AD8056 ideal
for portable and battery-powered applications where size and
power are critical. These amplifiers in the R-8, N-8, and RM-8
packages are available in the extended temperature range of
−40°C to +125°C.
5
4
3
2
1
0
GAIN (dB)
–1
–2
–3
–4
–5
R
V
C
R
F
G=+10
R
=909Ω
F
G=+5
R
F
FREQUENCY (Hz)
V
OUT
R
L
= 1000Ω
IN
50Ω
R
G
Figure 4. Frequency Response
G=+1
R
=0Ω
F
R
=100Ω
C
V
R
OUT
= 100Ω
L
= 100mV p -p
01063-003
G=+2
R
=402Ω
F
5
+V
S
4
–IN
01063-002
1G100M10M1M0.3M
01063-004
Rev. J
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Anal og Devices for its use, nor for any infringements of patents or ot her
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
Edits to Text at Top of Specifications Page (65 to 5)....................2
AD8055/AD8056
SPECIFICATIONS
TA = 25°C, VS = ±5 V, RF = 402 , RL = 100 , Gain = +2, unless otherwise noted.
Table 1.
AD8055A/AD8056A
Parameter Conditions Min Typ Max Unit
DYNAMIC PERFORMANCE
−3 dB Bandwidth G = +1, VO = 0.1 V p-p 220 300 MHz
G=+1, VO = 2 V p-p 125 150 MHz
G=+2, VO = 0.1 V p-p 120 160 MHz
G=+2, VO = 2 V p-p 125 150 MHz
Bandwidth for 0.1 dB Flatness VO = 100 mV p-p 25 40 MHz
Slew Rate G = +1, VO = 4 V step 1000 1400 V/μs
G = +2, VO = 4 V step 750 840 V/μs
Settling Time to 0.1% G = +2, VO = 2 V step 20 ns
Rise and Fall Time, 10% to 90% G = +1, VO = 0.5 V step 2 ns
G = +1, VO = 4 V step 2.7 ns
G = +2, VO = 0.5 V step 2.8 ns
G = +2, VO = 4 V step 4 ns
NOISE/HARMONIC PERFORMANCE
Total Harmonic Distortion fC = 10 MHz, VO = 2 V p-p, RL = 1 kΩ −72 dBc
f
Crosstalk, Output-to-Output (AD8056) f = 5 MHz, G = +2 −60 dB
Input Voltage Noise f = 100 kHz 6 nV/√Hz
Input Current Noise f = 100 kHz 1 pA/√Hz
Differential Gain Error NTSC, G = +2, RL = 150 Ω 0.01 %
NTSC, G = +2, RL = 37.5 Ω 0.02 %
Differential Phase Error NTSC, G = +2, RL = 150 Ω 0.02 Degree
NTSC, G = +2, RL = 37.5 Ω 0.1 Degree
DC PERFORMANCE
Input Offset Voltage 3 5 mV
T
Offset Drift 6 μV/°C
Input Bias Current 0.4 1.2 μA
T
Open-Loop Gain VO = ±2.5 V 66 71 dB
T
INPUT CHARACTERISTICS
Input Resistance 10 MΩ
Input Capacitance 2 pF
Input Common-Mode Voltage Range 3.2 ±V
Common-Mode Rejection Ratio VCM = ±2.5 V 82 dB
OUTPUT CHARACTERISTICS
Output Voltage Swing RL = 150 Ω 2.9 3.1 ±V
Output Current1 VO = ±2.0 V 55 60 mA
Short-Circuit Current1 110 mA
= 20 MHz, VO = 2 V p-p, RL = 1 kΩ −57 dBc
C
to T
MIN
MIN
MIN
10 mV
MAX
to T
1 μA
MAX
to T
64 dB
MAX
Rev. J | Page 3 of 16
AD8055/AD8056
AD8055A/AD8056A
Parameter Conditions Min Typ Max Unit
POWER SUPPLY
Operating Range ±4.0 ±5.0 ±6.0 V
Quiescent Current AD8055 5.4 6.5 mA
T
T
AD8056 10 12 mA
T
T
Power Supply Rejection Ratio +VS = +5 V to +6 V, −VS = −5 V 66 72 dB
−VS = –5 V to −6 V, +VS = +5 V 69 86 dB
OPERATING TEMPERATURE RANGE AD8055ART −40 +85 °C
AD8055AR, AD8055AN, AD8056AR, AD8056AN, AD8056ARM −40 +125 °C
1
Output current is limited by the maximum power dissipation in the package. See Figure 5.
to 125°C 7.6 mA
MIN
to 85°C 7.3 mA
MIN
to 125°C 13.9 mA
MIN
to 85°C 13.3 mA
MIN
Rev. J | Page 4 of 16
AD8055/AD8056
ABSOLUTE MAXIMUM RATINGS
Table 2.
Parameter Ratings
Supply Voltage 13.2 V
Input Voltage (Common Mode) ±VS
Differential Input Voltage ±2.5 V
Output Short-Circuit Duration
Observe Power
Derating Curves
Storage Temperature Range N, R −65°C to +150°C
Operating Temperature Range (A Grade) −40°C to +125°C
Lead Temperature (Soldering 10 sec) 300°C
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
MAXIMUM POWER DISSIPATION
The maximum power that can be safely dissipated by the
AD8055/AD8056 is limited by the associated rise in junction
temperature. The maximum safe junction temperature for
plastic encapsulated devices is determined by the glass
transition temperature of the plastic, approximately 150°C.
Exceeding this limit temporarily can cause a shift in parametric
performance due to a change in the stresses exerted on the die
by the package. Exceeding a junction temperature of 175°C for
an extended period can result in device failure.
While the AD8055/AD8056 are internally short-circuit
protected, this may not be sufficient to guarantee that the
maximum junction temperature (150°C) is not exceeded under
all conditions. To ensure proper operation, it is necessary to
observe the maximum power derating curves.
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
01063-005
Rev. J | Page 5 of 16
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