34 mW or 6.7 mA typical for 5 V supply
Output disable feature, 1.3 mA
Low distortion
−93 dBc second harmonic, f
−108 dBc third harmonic, f
DC precision
1 mV maximum input offset voltage
0.5 μV/°C input offset voltage drift
Wide supply range, 5 V to 24 V
Low price
Small packaging
Available in SOIC-8 and MSOP-8
APPLICATIONS
ADC preamps and drivers
Instrumentation preamps
Active filters
Portable instrumentation
Line receivers
Precision instruments
Ultrasound signal processing
High gain circuits
GENERAL DESCRIPTION
The AD8021 is an exceptionally high performance, high speed
voltage feedback amplifier that can be used in 16-bit resolution
systems. It is designed to have both low voltage and low current
noise (2.1 nV/√Hz typical and 2.1 pA/√Hz typical) while operating
at the lowest quiescent supply current (7 mA @ ±5 V) among
today’s high speed, low noise op amps. The AD8021 operates
over a wide range of supply voltages from ±2.25 V to ±12 V, as
well as from single 5 V supplies, making it ideal for high speed,
low power instruments. An output disable pin allows further
reduction of the quiescent supply current to 1.3 mA.
Rev. F
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Anal og Devices for its use, nor for any infringements of patents or ot her
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
= 1 MHz
C
= 1 MHz
C
for 16-Bit Systems
AD8021
CONNECTION DIAGRAM
LOGIC
REFERENCE
–IN
+IN
–V
Figure 1. SOIC-8 (R-8) and MSOP-8 (RM-8)
The AD8021 allows the user to choose the gain bandwidth
product that best suits the application. With a single capacitor,
the user can compensate the AD8021 for the desired gain with
little trade-off in bandwidth. The AD8021 is a well-behaved
amplifier that settles to 0.01% in 23 ns for a 1 V step. It has a fast
overload recovery of 50 ns.
The AD8021 is stable over temperature with low input offset
voltage drift and input bias current drift, 0.5 μV/°C and 10 nA/°C,
respectively. The AD8021 is also capable of driving a 75 Ω line
with ±3 V video signals.
The AD8021 is both technically superior and priced considerably
less than comparable amps drawing much higher quiescent
current. The AD8021 is a high speed, general-purpose amplifier,
ideal for a wide variety of gain configurations and can be used
throughout a signal processing chain and in control loops. The
AD8021 is available in both standard 8-lead SOIC and MSOP
packages in the industrial temperature range of −40°C to +85°C.
VS = ±5 V, @ TA = 25°C, RL = 1 kΩ, gain = +2, unless otherwise noted.
Table 1.
Parameter Conditions
DYNAMIC PERFORMANCE
−3 dB Small Signal Bandwidth
Slew Rate, 1 V Step
Settling Time to 0.01%
Overload Recovery (50%)
DISTORTION/NOISE PERFORMANCE
G = +1, C
G = +2, C
G = +5, C
G = +10, C
G = +1, C
G = +2, C
G = +5, C
G = +10, C
V
O
= 10 pF, VO = 0.05 V p-p 355 490
C
= 7 pF, VO = 0.05 V p-p 160 205
C
= 2 pF, VO = 0.05 V p-p 150 185
C
= 0 pF, VO = 0.05 V p-p 110 150
C
= 10 pF 95 120
C
= 7 pF 120 150
C
= 2 pF 250 300
C
= 0 pF 380 420
C
= 1 V step, RL = 500 Ω
±2.5 V input step, G = +2
AD8021AR/AD8021ARM
Min Typ Max Unit
23
50
f = 1 MHz
HD2
HD3
= 2 V p-p
V
O
= 2 V p-p
V
O
−93
−108
f = 5 MHz
HD2
HD3
Input Voltage Noise
Input Current Noise
Differential Gain Error
Differential Phase Error
DC PERFORMANCE
= 2 V p-p
V
O
= 2 V p-p
V
O
f = 50 kHz
f = 50 kHz
NTSC, R
NTSC, R
= 150 Ω
L
= 150 Ω
L
Input Offset Voltage
Input Offset Voltage Drift
Input Bias Current
to T
MAX
T
MIN
+Input or −input
Input Bias Current Drift
Input Offset Current
Open-Loop Gain
INPUT CHARACTERISTICS
Input Resistance
Common-Mode Input Capacitance
Input Common-Mode Voltage Range
Common-Mode Rejection Ratio
OUTPUT CHARACTERISTICS
= ±4 V −86 −98
V
CM
Output Voltage Swing
Linear Output Current
Short-Circuit Current
Capacitive Load Drive for 30% Overshoot
DISABLE CHARACTERISTICS
Off Isolation
Turn-On Time
Turn-Off Time
DISABLE Voltage—Off/On
Enabled Leakage Current
= 50 mV p-p/1 V p-p
V
O
f = 10 MHz
= 0 V to 2 V, 50% logic to 50% output
V
O
= 0 V to 2 V, 50% logic to 50% output
V
O
V
DISABLE
− V
LOGIC REFERENCE
LOGIC REFERENCE = 0.4 V
DISABLE = 4.0 V
−70
−80
2.1 2.6 nV/√Hz
2.1
0.03
0.04
0.4 1.0 mV
0.5
7.5 10.5 μA
10
0.1 0.5 ±μA
82 86
10
1
−4.1 to +4.6
−3.5 to +3.2 −3.8 to +3.4
60
75
15/120
−40
45
50
1.75/1.90
70
2
MHz
MHz
MHz
MHz
V/μs
V/μs
V/μs
V/μs
ns
ns
dBc
dBc
dBc
dBc
pA/√Hz
%
Degrees
μV/°C
nA/°C
dB
MΩ
pF
V
dB
V
mA
mA
pF
dB
ns
ns
V
μA
μA
Rev. F | Page 3 of 28
Page 4
AD8021
Parameter Conditions
Disabled Leakage Current
POWER SUPPLY
LOGIC REFERENCE = 0.4 V
DISABLE = 0.4 V
Operating Range
Quiescent Current
+Power Supply Rejection Ratio
−Power Supply Rejection Ratio
Output enabled
Output disabled
= 4 V to 6 V, VEE = −5 V −86 −95
V
CC
= 5 V, VEE = −6 V to −4 V −86 −95
V
CC
AD8021AR/AD8021ARM
Min Typ Max Unit
30
33
±2.25 ±5 ±12.0 V
7.0 7.7 mA
1.3 1.6 mA
= ±12 V, @ TA = 25°C, RL = 1 kΩ, gain = +2, unless otherwise noted.
V
S
Table 2.
AD8021AR/AD8021ARM
Parameter Conditions Min Typ Max Unit
DYNAMIC PERFORMANCE
−3 dB Small Signal Bandwidth G = +1, CC = 10 pF, VO = 0.05 V p-p 520 560 MHz
G = +2, CC = 7 pF, VO = 0.05 V p-p 175 220 MHz
G = +5, CC = 2 pF, VO = 0.05 V p-p 170 200 MHz
G = +10, CC = 0 pF, VO = 0.05 V p-p 125 165 MHz
Slew Rate, 1 V Step G = +1, CC = 10 pF 105 130 V/μs
G = +2, CC = 7 pF 140 170 V/μs
G = +5, CC = 2 pF 265 340 V/μs
G = +10, CC = 0 pF 400 460 V/μs
Settling Time to 0.01% VO = 1 V step, RL = 500 Ω 21 ns
Overload Recovery (50%) ±6 V input step, G = +2 90 ns
DISTORTION/NOISE PERFORMANCE
f = 1 MHz
HD2 VO = 2 V p-p −95 dBc
HD3 VO = 2 V p-p −116 dBc
f = 5 MHz
HD2 VO = 2 V p-p −71 dBc
HD3 VO = 2 V p-p −83 dBc
Input Voltage Noise f = 50 kHz 2.1 2.6 nV/√Hz
Input Current Noise f = 50 kHz 2.1 pA/√Hz
Differential Gain Error NTSC, RL = 150 Ω 0.03 %
Differential Phase Error NTSC, RL = 150 Ω 0.04 Degrees
DC PERFORMANCE
Input Offset Voltage 0.4 1.0 mV
Input Offset Voltage Drift T
MIN
to T
0.2 μV/°C
MAX
Input Bias Current +Input or −input 8 11.3 μA
Input Bias Current Drift 10 nA/°C
Input Offset Current 0.1 0.5 ±μA
Open-Loop Gain 84 88 dB
INPUT CHARACTERISTICS
Input Resistance 10 MΩ
Common-Mode Input Capacitance 1 pF
Input Common-Mode Voltage Range −11.1 to +11.6 V
Common-Mode Rejection Ratio VCM = ±10 V −86 −96 dB
μA
μA
dB
dB
Rev. F | Page 4 of 28
Page 5
AD8021
AD8021AR/AD8021ARM
Parameter Conditions Min Typ Max Unit
OUTPUT CHARACTERISTICS
Output Voltage Swing −10.2 to +9.8 −10.6 to +10.2 V
Linear Output Current 70 mA
Short-Circuit Current 115 mA
Capacitive Load Drive for 30% Overshoot VO = 50 mV p-p/1 V p-p 15/120 pF
DISABLE CHARACTERISTICS
Off Isolation f = 10 MHz −40 dB
Turn-On Time VO = 0 V to 2 V, 50% logic to 50% output 45 ns
Turn-Off Time VO = 0 V to 2 V, 50% logic to 50% output 50 ns
V
DISABLE Voltage—Off/On
DISABLE
− V
LOGIC REFERENCE
Enabled Leakage Current LOGIC REFERENCE = 0.4 V 70 μA
DISABLE = 4.0 V
Disabled Leakage Current LOGIC REFERENCE = 0.4 V 30 μA
DISABLE = 0.4 V
POWER SUPPLY
Operating Range ±2.25 ±5 ±12.0 V
Quiescent Current Output enabled 7.8 8.6 mA
Output disabled 1.7 2.0 mA
+Power Supply Rejection Ratio VCC = 11 V to 13 V, VEE = −12 V −86 −96 dB
−Power Supply Rejection Ratio VCC = 12 V, VEE = −13 V to −11 V −86 −100 dB
1.80/1.95 V
2 μA
33 μA
= 5 V, @ TA = 25°C, RL = 1 kΩ, gain = +2, unless otherwise noted.
V
S
Table 3.
AD8021AR/AD8021ARM
Parameter Conditions Min Typ Max Unit
DYNAMIC PERFORMANCE
−3 dB Small Signal Bandwidth G = +1, CC = 10 pF, VO = 0.05 V p-p 270 305 MHz
G = +2, CC = 7 pF, VO = 0.05 V p-p 155 190 MHz
G = +5, CC = 2 pF, VO = 0.05 V p-p 135 165 MHz
G = +10, CC = 0 pF, VO = 0.05 V p-p 95 130 MHz
Slew Rate, 1 V Step G = +1, CC = 10 pF 80 110 V/μs
G = +2, CC = 7 pF 110 140 V/μs
G = +5, CC = 2 pF 210 280 V/μs
G = +10, CC = 0 pF 290 390 V/μs
Settling Time to 0.01% VO = 1 V step, RL = 500 Ω 28 ns
Overload Recovery (50%) 0 V to 2.5 V input step, G = +2 40 ns
DISTORTION/NOISE PERFORMANCE
f = 1 MHz
HD2 VO = 2 V p-p −84 dBc
HD3 VO = 2 V p-p −91 dBc
f = 5 MHz
HD2 VO = 2 V p-p −68 dBc
HD3 VO = 2 V p-p −81 dBc
Input Voltage Noise f = 50 kHz 2.1 2.6 nV/√Hz
Input Current Noise f = 50 kHz 2.1 pA/√Hz
Rev. F | Page 5 of 28
Page 6
AD8021
AD8021AR/AD8021ARM
Parameter Conditions Min Typ Max Unit
DC PERFORMANCE
Input Offset Voltage 0.4 1.0 mV
Input Offset Voltage Drift T
Input Bias Current +Input or −input 7.5 10.3 μA
Input Bias Current Drift 10 nA/°C
Input Offset Current 0.1 0.5 ±μA
Open-Loop Gain 72 76 dB
INPUT CHARACTERISTICS
Input Resistance 10 MΩ
Common-Mode Input Capacitance 1 pF
Input Common-Mode Voltage Range 0.9 to 4.6 V
Common-Mode Rejection Ratio 1.5 V to 3.5 V −84 −98 dB
OUTPUT CHARACTERISTICS
Output Voltage Swing 1.25 to 3.38 1.10 to 3.60 V
Linear Output Current 30 mA
Short-Circuit Current 50 mA
Capacitive Load Drive for 30% Overshoot VO = 50 mV p-p/1 V p-p 10/120 pF
DISABLE CHARACTERISTICS
Off Isolation f = 10 MHz −40 dB
Turn-On Time VO = 0 V to 1 V, 50% logic to 50% output 45 ns
Turn-Off Time VO = 0 V to 1 V, 50% logic to 50% output 50 ns
DISABLE Voltage—Off/On
Enabled Leakage Current LOGIC REFERENCE = 0.4 V 70 μA
Disabled Leakage Current LOGIC REFERENCE = 0.4 V 30 μA
POWER SUPPLY
Operating Range ±2.25 ±5 ±12.0 V
Quiescent Current Output enabled 6.7 7.5 mA
Output disabled 1.2 1.5 mA
+Power Supply Rejection Ratio VCC = 4.5 V to 5.5 V, VEE = 0 V −74 −82 dB
−Power Supply Rejection Ratio VCC = 5 V, VEE = −0.5 V to +0.5 V −76 −84 dB
to T
MIN
V
DISABLE
0.8 μV/°C
MAX
− V
LOGIC REFERENCE
DISABLE = 4.0 V
DISABLE = 0.4 V
1.55/1.70 V
2 μA
33 μA
Rev. F | Page 6 of 28
Page 7
AD8021
ABSOLUTE MAXIMUM RATINGS
Table 4.
Parameter Rating
Supply Voltage 26.4 V
Power Dissipation
Observed power
derating curves
Input Voltage (Common Mode) ±VS ± 1 V
Differential Input Voltage
1
±0.8 V
Differential Input Current ±10 mA
Output Short-Circuit Duration
Observed power
derating curves
Storage Temperature Range −65°C to +125°C
Operating Temperature Range −40°C to +85°C
Lead Temperature (Soldering, 10 sec) 300°C
1
The AD8021 inputs are protected by diodes. Current-limiting resistors are
not used to preserve the low noise. If a differential input exceeds ±0.8 V, the
input current should be limited to ±10 mA.
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
MAXIMUM POWER DISSIPATION
The maximum power that can be safely dissipated by the
AD8021 is limited by the associated rise in junction temperature. The maximum safe junction temperature for plastic
encapsulated devices is determined by the glass transition
temperature of the plastic, approximately 150°C. Temporarily
exceeding this limit can cause a shift in parametric performance
due to a change in the stresses exerted on the die by the package.
Exceeding a junction temperature of 175°C for an extended
period can result in device failure.
While the AD8021 is internally short-circuit protected, this can
not be sufficient to guarantee that the maximum junction temperature (150°C) is not exceeded under all conditions. To ensure
proper operation, it is necessary to observe the maximum
power derating curves.
2.0
1.5
8-LEAD SOIC
1.0
8-LEAD MSOP
0.5
MAXIMUM POW ER DISSIP ATION (W)
0.01
–55 –45 –35 –25 –15 –5 5 15 25 35 45 55 65
1
Specification is for device in free air: 8-lead SOIC: θJA = 125°C/W; 8-lead
Figure 3. Maximum Power Dissipation vs. Temperature
MSOP: θ
= 145°C/W.
JA
AMBIENT TEM PERATURE (°C)
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
01888-004
5
8
75
1
Rev. F | Page 7 of 28
Page 8
AD8021
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
LOGIC
REFERENCE
–IN
+IN
–V
AD8021
1
2
3
4
S
8
7
6
5
DISABLE
+V
S
V
OUT
C
COMP
01888-003
Figure 4. Pin Configuration
Table 5. Pin Function Descriptions
Pin No. Mnemonic Description
1 LOGIC REFERENCE Reference for Pin 81 Voltage Level. Connect to logic low supply.
2 −IN Inverting Input.
3 +IN Noninverting Input.
4 −V
5 C
6 V
S
Compensation Capacitor. Tie to −VS. (See the Applications section for value.)
COMP
Output.
OUT
Negative Supply Voltage.
7 +VS Positive Supply Voltage.
8
1
When Pin 8 (
Pin 1, the part is disabled. (See the Specifications tables for exact disable and enable voltage levels.) If the disable feature is not going to be used, Pin 8 can be tied to
+VS or a logic high source, and Pin 1 can be tied to ground or logic low. Alternatively, if Pin 1 and Pin 8 are not connected, the part is in an enabled state.
DISABLE
) is higher than Pin 1 (LOGIC REFERENCE) by approximately 2 V or more, the part is enabled. When Pin 8 is brought down to within about 1.5 V of
DISABLE
Disable, Active Low.
Rev. F | Page 8 of 28
Page 9
AD8021
TYPICAL PERFORMANCE CHARACTERISTICS
TA = 25°C, VS = ±5 V, RL = 1 kΩ, G = +2, RF = RG = 499 Ω, RS = 49.9 Ω, RO = 976 Ω, RD = 53.6 Ω, CC = 7 pF, CL = 0, CF = 0, V
frequency = 1 MHz, unless otherwise noted.
24
G = +10, R
21
18
G = +5, R
15
12
9
G = +2, R
6
3
CLOSED-LOOP GAIN (dB)
G = +1, R
0
–3
–6
0.1M1G1M10M100M
= 1kΩ, RG = 110Ω, CC = 0pF
F
= 1kΩ, RG = 249Ω, CC = 2pF
F
= RG = 499Ω, CC = 7pF
F
= 75Ω, CC = 10pF
F
FREQUENCY (Hz)
01888-005
9
G = +2
8
7
6
5
4
GAIN (dB)
3
2
1
0
–1
10M100M
FREQUENCY (Hz)
VS = ±2.5V
VS = ±2.5V
OUT
VS = ±5V
VS = ±12V
= 2 V p-p,
01888-008
1G1M
Figure 5. Small S ignal Freq uency Respons e vs. Frequency and Gain,
= 50 mV p-p, Noninverting (See Figure 48)
V
OUT
24
21
G = –10, RF = 1kΩ, RG = 100Ω,
18
= 100Ω, CC = 0pF
R
IN
15
= 1kΩ, RG = 200Ω,
G = –5, R
12
9
GAIN (dB)
6
3
0
–3
–6
0.1M1G1M10M100M
F
= 66.5Ω, CC = 1.5pF
R
IN
= 499Ω, RG = 249Ω,
G = –2, R
F
= 63.4Ω, CC = 4pF
R
IN
= 499Ω, RG = 499Ω,
G = –1, R
F
= 56.2Ω, CC = 7pF
R
IN
FREQUENCY (Hz)
Figure 6. Small S ignal Freq uency Respons e vs. Frequency and
Gain, V
9
G = +2
8
7
6
5
4
GAIN (dB)
3
2
1
0
–1
0.1M1G1M
= 50 mV p-p Inverting (See Figure 48)
OUT
= 9pF
C
C
C
= 7pF
C
CC = 9pF
10M100M
FREQUENCY (Hz)
C
C
C
C
= 5pF
= 7pF
Figure 7. Small S ignal Freq uency Respons e vs. Frequency and
Compensation Capacitor, V
= 50 mV p-p (See Figu re 48)
OUT
01888-006
01888-007
Figure 8. Small S ignal Freq uency Respons e vs. Frequency and Supply,
V
= 50 mV p-p, Noninverting (See Figure 48)
OUT
3
G = –1
2
1
0
–1
–2
GAIN (dB)
–3
–4
–5
–6
–7
10M100M
FREQUENCY (Hz)
VS = ±2.5V
VS = ±12V
VS = ±2.5V
VS = ±5V
01888-009
1G1M
Figure 9. Small S ignal Freq uency Respons e vs. Frequency and Supply,
= 50 mV p-p, Inverting (See Figure 50)
V
OUT
9
G = +2
8
7
6
5
4
GAIN (dB)
3
2
1
0
–1
V
= 4V p-p
OUT
V
= 1V p-p
OUT
10M100M
Figure 10. Frequency Response v s. Frequency and V
V
= 0.1V AND 50mV p -p
OUT
FREQUENCY (Hz)
Figure 48)
(See
, Noninverting
OUT
01888-010
1G1M
Rev. F | Page 9 of 28
Page 10
AD8021
10
G = +2
9
8
7
6
5
GAIN (dB)
4
3
2
1
0
0.1M1G1M
RL = 100Ω
10M100M
FREQUENCY (Hz)
RL = 1kΩ
Figure 11. Large Signal Frequency R esponse v s. Frequency and
Load, Noninverting (See
Figure 49)
01888-011
10
G = +2
R
= R
9
F
G
8
7
6
5
GAIN (dB)
4
3
2
1
0
RF = 1kΩ AND CF = 2.2pF
1M
R
= 499Ω
F
R
= 75Ω
F
FREQUENCY (Hz)
= 1kΩ
R
F
= 250Ω
R
F
RF = 150Ω
1G0.1M10M100M
Figure 14. Small Signal Fre quency Response vs. Freq uency an d R
Noninverting, V
= 50 mV p-p (See Figure 48)
OUT
01888-014
,
F
9
G = +2
8
7
6
5
4
GAIN (dB)
3
2
1
0
–1
+85°C
V
=
OUT
2V p-p
+25°C
–40°C
10M100M
FREQUENCY (Hz)
–40°C
+85°C
+25°C
V
=
OUT
50mV p-p
1G1M
Figure 12. Frequency Response v s. Frequency, Tempe rature, and
, Noninverting (See Figure 48)
V
OUT
GAIN (dB)
–12
18
G = +2
15
12
9
6
3
0
–3
–6
–9
10M
FREQUENCY (Hz)
50pF
100M
30pF
20pF
10pF
0pF
1G1M
Figure 13. Small Signal Frequency Response vs.
Frequency and Capacitive Load, Noninverting, V
Figure 49 and Figure 71)
(See
= 50 mV p-p
OUT
15
G = +2
12
9
6
3
0
GAIN (dB)
–3
–6
–9
–12
01888-012
–15
0.1M1G1M
10M100M
FREQUENCY (Hz)
Figure 15. Small Signal Fre quency Response vs. Freq uency an d R
Noninverting, V
100
90
80
70
60
50
40
30
OPEN-LOOP GAIN (dB)
20
10
01888-013
0
10k
100k1G1M
= 50 mV p-p (See Figure 48)
OUT
FREQUENCY (Hz)
Figure 16. Open-Loop Gain and Phase vs. Frequency, R
= 1 kΩ, RO = 976 Ω, RD = 53.6 Ω, CC = 0 pF (See Figure 50)
R
F
= 49.9Ω
R
S
R
= 100Ω
S
= 249Ω
R
S
10M100M
= 100 Ω,
G
180
135
90
45
0
–45
–90
–135
,
S
01888-015
PHASE (Degrees)
01888-016
Rev. F | Page 10 of 28
Page 11
AD8021
6.4
G = +2
6.2
6.0
GAIN (dB)
5.8
5.6
5.4
1M
FREQUENCY (Hz)
VS = ±5V
10M100M
VS = ±2.5V
Figure 17. 0.1 dB Flatness vs. Frequency and Supply, V
= 150 Ω, Noninverting (See Figure 49)
R
L
VS = ±12V
= 1 V p-p,
OUT
01888-017
–20
–30
–40
–50
–60
–70
(dBm)
OUT
–80
P
–90
–100
–110
–120
9.5
Δf
= 0.2MHz
9.710.3
f
1
10.0
FREQUENCY (MHz)
f
2
Figure 20. Intermodulation Distortion vs. Frequency
P
OUT
976Ω
53.6Ω50Ω
10.5
01888-020
–20
–30
–40
DISTORTION (dBc)
–50
–60
–70
–80
–90
–100
–110
–120
–130
RL = 100Ω
0.1M
R
= 1kΩ
L
THIRD
FREQUENCY (Hz)
1M
SECOND
10M20M
Figure 18. Second and Third Harmonic Distortion vs. Frequency and R
–30
–40
–50
–60
DISTORTION (dBc)
–70
–80
–90
–100
–110
–120
–130
100k
VS = ±2.5V
SECOND
THIRD
THIRD
VS = ±5V
SECOND
SECOND
1M20M
FREQUENCY (Hz)
VS = ±12V
10M
Figure 19. Second and Third Harmonic Distortion vs. Frequency and V
01888-018
L
01888-019
S
50
45
40
VS = ±5V
35
V
= ±2.5V
30
THIRD-ORDER INTERCEPT (dBm)
25
20
0
S
515
1020
FREQUENCY (MHz)
Figure 21. Third-Order Intercept vs. Frequency and Supply Voltage
–50
–60
–70
–80
–90
SECOND
DISTORTION (dBc)
–100
RL = 1kΩ
–110
–120
1
Figure 22. Second and Third Harmonic Distortion vs. V
SECOND
RL = 100Ω
THIRD
THIRD
2345
(V p-p)
V
OUT
OUT
6
and R
01888-021
01888-022
L
Rev. F | Page 11 of 28
Page 12
AD8021
–50
3.5
–3.1
DISTORTION (dBc)
–100
–110
–120
–60
–70
–80
–90
1
SECOND
f
= 5MHz
C
THIRD
SECOND
f
= 1MHz
C
THIRD
2345
(V p-p)
V
OUT
Figure 23. Second and Third Harmonic Distortion vs. V
), G = +2
C
DISTORTION (dBc)
–100
–40
–50
–60
–70
–80
–90
Fundamental Frequency (f
f
= 5MHz
C
SECOND
THIRD
SECOND
f
= 1MHz
C
THIRD
OUT
6
and
01888-023
3.4
3.3
3.2
3.1
3.0
POSITIVE OUTPUT VOLTAGE (V)
2.9
2.8
08001600
40012002000
LOAD (Ω)
POSITIVE OUTPUT
NEGATIVE OUTPUT
Figure 26. DC Output Voltages vs. Load (See
120
100
80
60
40
SHORT-CIRCUIT CURRENT (mA)
20
VS = ±12V
VS = ±5.0V
VS = ±2.5V
Figure 48)
–3.2
–3.3
–3.4
–3.5
–3.6
NEGATIVE OUTPUT VOLTAGE (V)
–3.7
01888-026
–3.8
–110
1
2345
V
(V p-p)
OUT
Figure 24. Second and Third Harmonic Distortion vs. V
Fundamental Frequency (f
–70
f
= 1MHz
C
R
= 1kΩ
L
R
= R
F
–80
–90
–100
DISTORTION (dBc)
–110
–120
G
G = +2
0400800
2006001000
FEEDBACK RESISTANCE (Ω)
), G = +10
C
SECOND
THIRD
OUT
6
and
Figure 25. Second and Third Harmonic Distortion vs. Feedback Resistor (R
01888-024
01888-025
)
F
0
–50–1030–301050
TEMPERATURE ( °C)
7090110
Figure 27. Short-Circuit Current to Ground vs. Temperature
50
G = 2
(mV)
V
OUT
–10
–20
–30
–40
–50
40
30
20
10
80400
RL = 1kΩ, 150Ω
120160200
TIME (ns)
Figure 28. Small Signal Transient Response vs.
, VO = 50 mV p-p, Noninverting (See Figure 49)
R
L
01888-027
01888-028
Rev. F | Page 12 of 28
Page 13
AD8021
V
= 4V p-p
2.0
O
G = 2
2.0
V
= 2V p-p
O
G = 2
= 4V p-p
V
O
G = –1
RL = 1kΩ
500
RL = 150Ω
80400
(See
V
100150200250
120160200
TIME (ns)
Figure 49)
V
IN
OUT
TIME (ns)
, Noninverting
L
1.0
(V)
OUT
V
–1.0
–2.0
Figure 29. Large Signal Transient Response vs. R
5
4
3
2
1
–1
VOLTS
–2
–3
–4
–5
Figure 30. Large Signal Transient Response, Inverting (See
Figure 50)
01888-029
01888-030
1.0
(V)
OUT
V
–1.0
–2.0
80400
TIME (ns)
= ±5V
V
S
120160200
Figure 32. Large Signal Transient Response vs. V
VIN = ±3V
G = +2
V
= 1V/DIV
IN
V
= 2V/DIV
OUT
R
= 150Ω
L
V
IN
0100200300400500
TIME (ns)
Figure 33. Overdrive Recovery vs. R
V
OUT
, RL = 1kΩ
L
(See Figure 49)
V
(See Figure 48)
S
= ±2.5V
S
01888-032
01888-033
CL = 50pF
G = 2
2.0
C
= 10pF, 0pF
L
80400
120160200
TIME (ns)
(V)
OUT
V
1.0
–1.0
–2.0
Figure 31. Large Signal Transient Response vs. C
V
= 4V p-p
O
(See Figure 48)
L
01888-031
Rev. F | Page 13 of 28
G = 2
+0.01%
–0.01%
OUTPUT SETTLING
VERT = 0.2mV/DIV
Figure 34. 0.01% Settling Time, 2 V Step
25ns
HOR = 5ns/DIV
01888-034
Page 14
AD8021
100
80
60
40
20
0
–20
SETTLING (µV)
–40
–60
–80
–100
04 81632
PULSE WI DTH = 120ns
PULSE WI DTH = 300µs
5V
0V
t
1
Figure 35. Long-Term Settling, 0 V to 5 V, V
50
G = +1
40
30
20
10
(mV)
OUT
V
–10
–20
–30
–40
–50
Figure 36. Small Signal Transient Response, V
12
80400
(See
TIME (µs)
TIME (ns)
2028
= ±12 V, G = +13
S
120160200
= 50 mV p-p, G = +1
O
Figure 48)
100
10
INPUT CURRENT NOISE (pA/√Hz)
24
01888-035
1
10010M1k10k100k
10
FREQUENCY (Hz)
1M
01888-038
Figure 38. Input Current Noise vs. Frequency
0.48
0.44
0.40
0.36
0.32
VOLTAGE OFFSET (mV)
0.28
01888-036
0.24
–500
–2510025
TEMPERATURE (°C)
Figure 39. V
vs. Temperature
OS
5075
01888-039
100
Hz)
√
10
VOLTAGE NOISE (nV/
1
101001k10k100k1M
FREQUENCY (Hz)
2.1nV/√Hz
Figure 37. Input Voltage No ise vs. Freq uency
01888-037
10M
Rev. F | Page 14 of 28
8.4
8.0
A)
μ
7.6
7.2
6.8
INPUT BIAS CURRENT (
6.4
6.0
–500
–2510025
Figure 40. Input Bias Current vs. Temperature
TEMPERATURE (°C)
5075
01888-040
Page 15
AD8021
–20
–30
–40
–50
–60
–70
CMRR (dB)
–80
–90
–100
–110
–120
10k1M
100k10M100M
Figure 41. CMRR vs. Fre quency ( See Figure 51)
FREQUENCY (Hz)
01888-041
0
–10
–20
–30
–40
–50
–60
–70
DISABLED ISOLATION (dB)
–80
–90
–100
0.1M10M
1M1G100M
FREQUENCY (Hz)
Figure 44. Input-to-Output Isolation, Chip Disabled (See Figure 5 4)
01888-044
300
100
30
10
3
1
0.3
0.1
OUTPUT IMPEDANCE (Ω)
0.03
0.01
0.003
10k1M
100k1G10M100M
FREQUENCY (Hz)
Figure 42. Output Impedance vs. Freq uency, Chip Ena bled
Figure 52)
(See
= 45ns
DISABLE
V
OUTPUT
)/Disable (t
EN
t
= 50ns
DIS
TIME (ns)
) Time vs. V
DIS
(See Figure 53)
OUT
4V
2V
2V
t
EN
1V
0100200300400500
Figure 43. Enable (t
01888-042
01888-043
300k
100k
30k
10k
3k
1k
300
100
OUTPUT IMPEDANCE (Ω)
30
10
3
10k1M
100k1G10M100M
FREQUENCY (Hz)
Figure 45. Output Impedance vs. Frequency, Chip Disabled
Figure 55)
(See
0
–10
–20
–30
–40
–50
PSRR (dB)
–60
–70
–80
–90
–100
VS = ±2.5V
FREQUENCY (Hz)
–PSRR
+PSRR
VS = ±12V
VS = ±5V
1M500M100M10k10M100k
Figure 46. PSRR vs. Frequency and Supply Voltage
(See
Figure 56 and Figure 57)
01888-045
01888-046
Rev. F | Page 15 of 28
Page 16
AD8021
8.5
8.0
7.5
7.0
6.5
SUPPLY CURRENT (mA)
6.0
5.5
–5025
010050
TEMPERATURE (°C)
Figure 47. Quiescent Supply Current vs. Temperature
The typical voltage feedback op amp is frequency stabilized
with a fixed internal capacitor, C
, using dominant pole
INTERNAL
compensation. To a first-order approximation, voltage feedback
op amps have a fixed gain bandwidth product. For example, if
its −3 dB bandwidth is 200 MHz for a gain of G = +1; at a gain
of G = +10, its bandwidth is only about 20 MHz. The AD8021 is
a voltage feedback op amp with a minimal C
1.5 pF. By adding an external compensation capacitor, C
INTERNAL
of about
, the
C
user can circumvent the fixed gain bandwidth limitation of
other voltage feedback op amps.
Unlike the typical op amp with fixed compensation, the
AD8021 allows the user to:
•Maximize the amplifier bandwidth for closed-loop gains
between 1 and 10, avoiding the usual loss of bandwidth
and slew rate.
•Optimize the trade-off between bandwidth and phase
margin for a particular application.
•Match bandwidth in gain blocks with different noise gains,
such as when designing differential amplifiers (as shown in
Figure 65).
110
100
90
86
80
70
C
= 10pF
C
60
50
40
30
OPEN-LOOP GAIN (dB)
20
10
0
–10
10k10M
1k1G10G
100k
FREQUENCY (Hz)
C
1M
= 0pF
C
(B)
(B)
(A)
(A)
(C)
100M
(C)
Figure 58. Simplified Diagram of Open-Loop Gain and Phase Response
180
135
90
45
0
PHASE (Degrees)
01888-058
Figure 58 is the AD8021 gain and phase plot that has been
simplified for instructional purposes. Arrow A in
Figure 58
shows a bandwidth of about 200 MHz and a phase margin at
about 60° when the desired closed-loop gain is G = +1 and
the value chosen for the external compensation capacitor is
C
= 10 pF. If the gain is changed to G = +10 and CC is fixed at
C
10 pF, then (as expected for a typical op amp) the bandwidth is
degraded to about 20 MHz and the phase margin increases to
90° (Arrow B). However, by reducing C
to 0 pF, the bandwidth
C
and phase margin return to about 200 MHz and 60° (Arrow C),
respectively. In addition, the slew rate is dramatically increased,
as it roughly varies with the inverse of C
10
9
8
7
6
5
4
3
2
COMPENSATION CAPACITANCE (pF)
1
0
12 3 4 5 6 7 8 91011
Figure 59. Suggested Compensation Capacitance vs. Gain for
NOISE GAIN (V/V)
Maintaining 1 dB Peaking
.
C
01888-059
Table 6 and Figure 59 provide recommended values of compensation capacitance at various gains and the corresponding
slew rate, bandwidth, and noise. Note that the value of the
compensation capacitor depends on the circuit noise gain, not
the voltage gain. As shown in
Figure 60, the noise gain, GN, of
an op amp gain block is equal to its noninverting voltage gain,
regardless of whether it is actually used for inverting or noninverting gain. Thus,
Noninverting G
Inverting G
R
S
3
1
2
NONINVERTI NG
= RF/RG + 1
N
= RF/RG + 1
N
R
G
R
F
1kΩ
R
G
249Ω
249Ω
2
3
+
AD8021
–
–V
S
C
COMP
G = GN = +5
6
5
Figure 60. The Noise Gain of Both is 5
1kΩ
–
AD8021
+
–V
S
C
COMP
INVERTING
R
F
6
5
G = –4
= +5
G
N
01888-060
Rev. F | Page 19 of 28
Page 20
AD8021
CF = CL = 0, RL = 1 kΩ, RIN = 49.9 Ω (see Figure 49).
With the AD8021, a variety of trade-offs can be made to finetune its dynamic performance. Sometimes more bandwidth
or slew rate is needed at a particular gain. Reducing the
compensation capacitance, as illustrated in
Figure 7, increases
the bandwidth and peaking due to a decrease in phase margin.
On the other hand, if more stability is needed, increasing the
compensation capacitor decreases the bandwidth while
increasing the phase margin.
As with all high speed amplifiers, parasitic capacitance and
inductance around the amplifier can affect its dynamic
response. Often, the input capacitance (due to the op amp itself,
as well as the PC board) has a significant effect. The feedback
resistance, together with the input capacitance, can contribute
to a loss of phase margin, thereby affecting the high frequency
response, as shown in
Figure 14. A capacitor (CF) in parallel
with the feedback resistor can compensate for this phase loss.
Additionally, any resistance in series with the source creates a
pole with the input capacitance (as well as dampen high
frequency resonance due to package and board inductance
and capacitance), the effect of which is shown in
Figure 15.
It must also be noted that increasing resistor values increases
the overall noise of the amplifier and that reducing the feedback
resistor value increases the load on the output stage, thus
increasing distortion (see
Figure 22).
USING THE DISABLE FEATURE
When Pin 8 (
REFERENCE) by approximately 2 V or more, the part is
enabled. When Pin 8 is brought down to within about 1.5 V
of Pin 1, the part is disabled. See
enable voltage levels. If the disable feature is not used, Pin 8 can
be tied to V
ground or logic low. Alternatively, if Pin 1 and Pin 8 are not
connected, the part is in an enabled state.
DISABLE
) is higher than Pin 1 (LOGIC
Table 1 for exact disable and
or a logic high source, and Pin 1 can be tied to
S
Rev. F | Page 20 of 28
Page 21
AD8021
C
R
THEORY OF OPERATION
The AD8021 is fabricated on the second generation of Analog
Devices proprietary High Voltage eXtra-Fast Complementary
Bipolar (XFCB) process, which enables the construction of PNP
and NPN transistors with similar f
s in the 3 GHz region. The
T
transistors are dielectrically isolated from the substrate (and
each other), eliminating the parasitic and latch-up problems
caused by junction isolation. It also reduces nonlinear capacitance (a source of distortion) and allows a higher transistor, f
,
T
for a given quiescent current. The supply current is trimmed,
which results in less part-to-part variation of bandwidth, slew
rate, distortion, and settling time.
As shown in
Figure 61, the AD8021 input stage consists of an
NPN differential pair in which each transistor operates at a
0.8 mA collector current. This allows the input devices a high
transconductance; thus, the AD8021 has a low input noise of
2.1 nV/√Hz @ 50 kHz. The input stage drives a folded cascode
that consists of a pair of PNP transistors. The folded cascode
and current mirror provide a differential-to-single-ended
conversion of signal current. This current then drives the high
impedance node (Pin 5), where the C
external capacitor is
C
connected. The output stage preserves this high impedance with
a current gain of 5000, so that the AD8021 can maintain a high
open-loop gain even when driving heavy loads.
Two internal diode clamps across the inputs (Pin 2 and Pin 3)
protect the input transistors from large voltages that could
otherwise cause emitter-base breakdown, which would result in
degradation of offset voltage and input bias current.
+V
S
+IN
–IN
C
INTERNAL
1.5pF
C
COMP
Figure 61. Simplified Schematic
OUTPUT
–V
S
C
C
01888-061
PCB LAYOUT CONSIDERATIONS
As with all high speed op amps, achieving optimum performance
from the AD8021 requires careful attention to PC board layout.
Particular care must be exercised to minimize lead lengths
between the ground leads of the bypass capacitors and between
the compensation capacitor and the negative supply. Otherwise,
lead inductance can influence the frequency response and even
cause high frequency oscillations. Use of a multilayer printed
circuit board, with an internal ground plane, reduces ground
noise and enables a compact component arrangement.
Due to the relatively high impedance of Pin 5 and low values of
the compensation capacitor, a guard ring is recommended. The
guard ring is simply a PC trace that encircles Pin 5 and is
connected to the output, Pin 6, which is at the same potential as
Pin 5. This serves two functions. It shields Pin 5 from any local
circuit noise generated by surrounding circuitry. It also
minimizes stray capacitance, which would tend to otherwise
reduce the bandwidth. An example of a guard ring layout is
shown in
Also shown in
immediately adjacent to the edge of the AD8021 package, spanning
Pin 4 and Pin 5. This capacitor must be a high quality surfacemount COG or NPO ceramic. The use of leaded capacitors is
not recommended. The high frequency bypass capacitor(s)
should be located immediately adjacent to the supplies,
Pin 4 and Pin 7.
To achieve the shortest possible lead length at the inverting
input, the feedback resistor R
spans the distance from the output, Pin 6, to inverting input
Pin 2. The return node of Resistor R
as possible to the return node of the negative supply bypass
capacitor connected to Pin 4.
Figure 62.
Figure 62, the compensation capacitor is located
LOGIC REFERENCE
–IN
+IN
–V
METAL
BYPASS
APACITO
is located beneath the board and
F
should be situated as close
G
(TOP VIEW)
1
2
3
4
S
GROUND
PLANE
COMPENSATION
CAPACITOR
DISABLE
8
+V
7
S
C
V
COMP
6
5
Figure 62. Recommended Location of
Critical Components and Guard Ring
OUT
GROUND
BYPASS
CAPACITOR
PLANE
01888-062
Rev. F | Page 21 of 28
Page 22
AD8021
DRIVING 16-BIT ADCs
Low noise and adjustable compensation make the AD8021
especially suitable as a buffer/driver for high resolution ADCs.
As seen in
at frequencies between 100 kHz and 1 MHz. This is an
advantage for complex waveforms that contain high frequency
information, because the phase and gain integrity of the sampled
waveform can be preserved throughout the conversion process.
The increase in loop gain results in improved output regulation
and lower noise when the converter input changes state during
a sample. This advantage is particularly apparent when using
16-bit high resolution ADCs with high sampling rates.
Figure 63 shows a typical ADC driver configuration. The
AD8021 is in an inverting gain of −7.5, f
output voltage is 10 V p-p. The results are listed in
Table 7. Summary of ADC Driver Performance (fC = 65 kHz,
V
OUT
Parameter Measurement Unit
Second Harmonic Distortion −101.3 dBc
Third Harmonic Distortion −109.5 dBc
THD −100.0 dBc
SFDR +100.3 dBc
Figure 64 shows another ADC driver connection. The circuit
was tested with a noninverting gain of 10.1 and an output
voltage of approximately 20 V p-p for optimum resolution and
noise performance. No filtering was used. An FFT was
performed using Analog Devices evaluation software for the
AD7665 16-bit converter. The results are listed in Table 8.
Figure 19, the harmonic distortion is better than 90 dBc
is 65 kHz, and its
C
+12V
3
50Ω
590Ω
R
200Ω
+
AD8021
2
–
G
–12V
C
10pF
56pF
C
5
R
1.5kΩ
6
F
Figure 63. Inverting ADC Driver, Gain = −7.5, f
IN
HI
IN
HI
+5V
AD7665
570kSPS
C
= 10 V p-p)
+12V
50Ω
3
50Ω
Figure 64. Noninverting ADC Driver, Gain = 10, f
50Ω
82.5Ω
+
AD8021
2
–
–12V
R
G
6
5
C
C
R
F
750Ω
OPTIONAL C
IN
HI
F
IN
LO
Table 7.
= 65 kHz
+5V
AD7665
570kSPS
ADC
= 100 kHz
C
16 BITS
01888-063
16 BITS
01888-064
Table 8. Summary of ADC Driver Performance
(f
= 100 kHz, V
C
= 20 V p-p)
OUT
Parameter Measurement Unit
Second Harmonic Distortion −92.6 dBc
Third Harmonic Distortion −86.4 dBc
THD −84.4 dBc
SFDR +5.4 dBc
DIFFERENTIAL DRIVER
The AD8021 is uniquely suited as a low noise differential driver
for many ADCs, balanced lines, and other applications requiring
differential drive. If pairs of internally compensated op amps are
configured as inverter and follower, the noise gain of the inverter
is higher than that of the follower section, resulting in an
imbalance in the frequency response (see
A better solution takes advantage of the external compensation
feature of the AD8021. By reducing the C
inverter, its bandwidth can be increased to match that of the
follower, avoiding compromises in gain bandwidth and phase
delay. The inverting and noninverting bandwidths can be
closely matched using the compensation feature, thus
minimizing distortion.
Figure 65 illustrates an inverter-follower driver circuit operating
at a gain of 2, using individually compensated AD8021s. The
values of feedback and load resistors were selected to provide a
total load of less than 1 kΩ, and the equivalent resistances seen
at each op amp’s inputs were matched to minimize offset voltage
and drift.
Figure 67 is a plot of the resulting ac responses of
driver halves.
249Ω
3
232Ω
+
AD8021
2
–
–V
3
+
AD8021
2
–
–V
S
S
V
IN
49.9Ω
499Ω
332Ω
Figure 65. Differential Amplifier
G = +2
7pF
499Ω
G = –2
5pF
664Ω
Figure 66).
COMP
6
5
1kΩ
6
5
1kΩ
value of the
V
OUT1
V
OUT2
01888-065
Rev. F | Page 22 of 28
Page 23
AD8021
12
9
6
3
0
–3
GAIN (dB)
–6
–9
–12
–15
–18
100k1M10M100M1G
FREQUENCY (Hz)
G = –2
G = +2
01888-066
Figure 66. AC Response of Two Identically Compensated High Speed Op
Amps Configured for a Gain of +2 and a Gain of −2
12
9
6
3
0
–3
GAIN (dB)
–6
–9
–12
–15
–18
100k1M10M100M1G
FREQUENCY (Hz)
G = ±2
01888-067
Figure 67. AC Response of Two Dissimilarly Compensated AD8021 Op Amps
(
Figure 66) Configured for a Gain of +2 and a Gain of −2,
(Note the Close Gain Match)
USING THE AD8021 IN ACTIVE FILTERS
The low noise and high gain bandwidth of the AD8021 make it
an excellent choice in active filter circuits. Most active filter
literature provides resistor and capacitor values for various
filters but neglects the effect of the op amp’s finite bandwidth on
filter performance; ideal filter response with infinite loop gain is
implied. Unfortunately, real filters do not behave in this manner.
Instead, they exhibit finite limits of attenuation, depending on
the gain bandwidth of the active device. Good low-pass filter
performance requires an op amp with high gain bandwidth for
attenuation at high frequencies, and low noise and high dc gain
for low frequency, pass-band performance.
Figure 68 shows the schematic of a 2-pole, low-pass active filter
and lists typical component values for filters having a Besseltype response with a gain of 2 and a gain of 5.
network analyzer plot of this filter’s performance.
Figure 69 is a
C1
+V
S
V
IN
R2R1
C2
R
G
Figure 68. Schematic of a Second-Order, Low-Pass Active Filter
AD8021
3
2
6
V
OUT
5
C
C
–V
S
R
F
01888-068
Table 9. Typical Component Values for Second-Order, LowPass Active Filter of
Figure 69. Frequency Response of the Filter Circuit of
G = 5
01888-069
Figure 68
for Two Different Gains
DRIVING CAPACITIVE LOADS
When the AD8021 drives a capacitive load, the high frequency
response can show excessive peaking before it rolls off. Two
techniques can be used to improve stability at high frequency
and reduce peaking. The first technique is to increase the
compensation capacitor, C
maintaining gain flatness at low frequencies. The second
technique is to add a resistor, R
pin of the AD8021 and the capacitive load, C
the response of the AD8021 when both C
reduce peaking. For a given C
determine the value of R
the frequency response. Note, however, that using R
the low frequency output by a factor of R
, which reduces the peaking while
C
, in series between the output
B
SNUB
. shows
Figure 70
L
and R
C
, Figure 71 can be used to
L
that maintains 2 dB of peaking in
B
SNUB
/(R
LOAD
SNUB
B are used to
SNUB
attenuates
SNUB
B + R
LOAD
).
Rev. F | Page 23 of 28
Page 24
AD8021
18
16
14
49.9
12
10
8
GAIN (dB)
6
4
2
0
0.1100010100
499
+V
49.9
Ω
Ω
–V
Ω
Figure 70. Peaking vs. R
S
PR
5
S
C
C
Ω
499
1.0
FREQUENCY (MHz)
FET
OBE
R
SNUB
6
33pF
CC = 8pF;
R
and CC for CL = 33 pF
SNUB
1k
SNUB
R
L
Ω
= 17.4
Ω
CC = 7pF;
R
= 0
SNUB
CC = 8pF;
R
= 0
SNUB
Ω
Ω
01888-070
20
18
16
14
12
(Ω)
10
SNUB
R
8
6
4
2
0
05102025303540455015
Figure 71. Relationship of R
CAPACITIVE LOAD (pF)
vs. CBL for 2 dB Peaking at a Gain of +2
SNUB
01888-071
Rev. F | Page 24 of 28
Page 25
AD8021
OUTLINE DIMENSIONS
5.00 (0.1 968)
4.80 (0.1 890)
4.00 (0.1574)
3.80 (0.1497)
85
6.20 (0.2440)
5.80 (0.2284)
41
1.27 (0.0500)
BSC
0.25 (0.0098)
0.10 (0.0040)
COPLANARITY
0.10
CONTROLLING DIMENSIONS ARE IN MILLIMETERS; INCH DIMENSIONS
(IN PARENTHESES) ARE ROUNDED-OFF MILLIMETER EQUIVALENTS FOR
REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN.
SEATING
PLANE
COMPLIANT TO JEDEC STANDARDS MS-012-AA
1.75 (0.0688)
1.35 (0.0532)
0.51 (0.0201)
0.31 (0.0122)
0.25 (0.0098)
0.17 (0.0067)
0.50 (0.0196)
0.25 (0.0099)
8°
1.27 (0.0500)
0°
0.40 (0.0157)
Figure 72. 8-Lead Standard Small Outline Package [SOIC]
Narrow Body (R-8)
Dimensions shown in millimeters and (inches)
3.20
3.00
2.80
8
5
3.20
3.00
2.80
PIN 1
0.95
0.85
0.75
0.15
0.00
COPLANARITY
1
0.65 BSC
0.38
0.22
0.10
5.15
4.90
4.65
4
SEATING
PLANE
1.10 MAX
0.23
0.08
8°
0°
0.80
0.60
0.40
× 45°
COMPLIANT TO JEDEC STANDARDS MO-187-AA
Figure 73. 8-Lead Mini Small Outline Package [MSOP]
(RM-8)
Dimensions shown in millimeters
ORDERING GUIDE
Model Temperature Range Package Description Package Option Branding
AD8021AR −40°C to +85°C 8-Lead SOIC R-8
AD8021AR-REEL −40°C to +85°C 8-Lead SOIC R-8
AD8021AR-REEL7 −40°C to +85°C 8-Lead SOIC R-8
AD8021ARZ
AD8021ARZ-REEL
AD8021ARZ-REEL7
AD8021ARM −40°C to +85°C 8-Lead MSOP RM-8 HNA
AD8021ARM-REEL −40°C to +85°C 8-Lead MSOP RM-8 HNA
AD8021ARM-REEL7 −40°C to +85°C 8-Lead MSOP RM-8 HNA
AD8021ARMZ
AD8021ARMZ-REEL
AD8021ARMZ-REEL7
1
Z = Pb-free part, # denotes lead-free product may be top or bottom marked.