Analog Devices AD8018 a Datasheet

5 V, Rail-to-Rail, High-Output Current,
V
S
–IN2
IN2
6
5
7
8
OUT2
OUT1
–IN1
IN1
–V
S
1
2
3
4
AD8018AR
a
FEATURES Ideal xDSL Line Drive Amplifier for USB, PCMCIA, or
PCI-Based Customer Premise Equipment (CPE). The AD8018 provides maximum reach on 5 V supply, driving 16 dBm of power into a back-terminated, transformer-coupled 100 while maintaining –82 dBc of out-of-band SFDR.
Rail-to-Rail Output Voltage and High Output Current
Drive
400 mA Output Current into Differential Load of 10
@ 8 V p-p
Low Single-Tone Distortion
–86 dBc Worst Harmonic, 6 V p-p into Differential 10 @ 100 kHz
Low Noise
4.5 nV/Hz Voltage Noise Density, 100 kHz
Out-of-Band SFDR = –82 dBc, 144 kHz to 500 kHz,
= 12.5 , P
R
LOAD
Low-Power Operation
3.3 V to 8 V Power Supply Range
Two Logic Bits for Standby and Shutdown Low Supply Current of 9 mA/Amplifier (Typ) Current Feedback Amplifiers High Speed
130 MHz Bandwidth (–3 dB)
300 V/s Slew Rate
APPLICATIONS xDSL USB, PCI, PCMCIA Cards Consumer DSL Modems Twisted Pair Line Driver
30
40
50
60
SFDR dBc
70
80
90
VS = 3.3V
4186 8 10 12 14 16
Figure 1. Out-of-Band SFDR vs. ADSL Upstream Line Power;
= 5 V, N = 4 Turns, 144 kHz to 500 kHz. See Evaluation
V
S
Board Schematics in Figure 11.
REV. A
= 13 dBm
LINE
N = 4.0
VS = 5V
VS = 8V
P
– dBm
LINE
xDSL Line Drive Amplifier
AD8018
PIN CONFIGURATIONS
8-Lead SOIC
(Thermal Coastline)
PRODUCT DESCRIPTION
The AD8018 is intended for use in single-supply (5 V) xDSL modems where high-output current and low distortion are essential to achieve maximum reach. The dual high-speed amplifiers are capable of driving low distortion signals to within
0.5 V of the power supply rail. Each amplifier can drive 400 mA of current into 10 (differential) while maintaining –82 dBc out-of-band SFDR. The AD8018 is available with flexible standby and shutdown modes. Two digital logic bits (PWDN1 and PWDN0) may be used to put the AD8018 into one of three modes: full power, standby (outputs low impedance), and shutdown (outputs high impedance).
Fabricated with ADI’s high-speed XFCB (eXtra Fast Comple­mentary Bipolar) process, the high bandwidth and fast slew rate of the AD8018 keep distortion to a minimum, while dissipat­ing a minimum of power. The quiescent current of the AD8018 is a low 9 mA/amplifier. The AD8018 drive capability comes in compact 8-lead Thermal Coastline SOIC and 14-lead TSSOP packages. Low-distortion, rail-to-rail output voltage, and high­current drive in small packages make the AD8018 ideal for use in low-cost USB, PCMCIA, and PCI Customer Premise Equipment for ADSL, SDSL, VDSL, and proprietary xDSL systems. Both models will operate over the temperature range –40°C to +85°C.
5V
750
1nF
10
10k
750
750
10
1nF
0.01␮F
V
IN
0.01␮F
10k
10k
100
V
REF
0.01␮F
100
Figure 2. Single-Supply Voltage Differential Drive Circuit for xDSL Applications
14-Lead TSSOP
1
NC
2
OUT1
3
–IN1
IN1
4
5
–V
S
6
PWDN1
7
NC
NC = NO CONNECT
R1
3.1
P
OUT
16dBm
R2
3.1
TRANSFORMER
10k
AD8018ARU
RL = 100
1:4
14
13
12
11
10
9
8
LINE­POWER 13dBm
NC
V
S
OUT2
–IN2
IN2
PWDN0
DGND
Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781/329-4700 World Wide Web Site: http://www.analog.com Fax: 781/326-8703 © Analog Devices, Inc., 2000
AD8018–SPECIFICATIONS
(@ 25C, VS = 5 V, RL = 100 , RF = RG = 750 unless otherwise noted.)
Parameter Conditions Min Typ Max Unit
DYNAMIC PERFORMANCE
–3 dB Bandwidth G = 1, V
G = 1, V G = 2, V G = 2, V
0.1 dB Bandwidth V Large Signal Bandwidth V
OUT
OUT
Slew Rate Noninverting, V Rise and Fall Time Noninverting, V Settling Time 0.1%, V
< 0.4 V p-p, RL = 5 40 50 MHz
OUT
< 0.4 V p-p, RL = 100 100 130 MHz
OUT
< 0.4 V p-p, RL = 5 35 40 MHz
OUT
< 0.4 V p-p, RL = 100 80 100 MHz
OUT
< 0.4 V p-p, RL = 100 10 MHz = 4 V p-p, G = +2 80 MHz
= 4 V p-p 300 V/␮s
OUT
= 2 V p-p 5.5 ns
OUT
= 2 V p-p, RL = 100 25 ns
OUT
NOISE/HARMONIC PERFORMANCE
Distortion, V Second Harmonic 100 kHz, R
= 6 V p-p (Differential)
OUT
= 10 –89 –94 dBc
L
500 kHz, RL = 10 –61 –63 dBc
Third Harmonic 100 kHz, R
= 10 –86 –89 dBc
L
500 kHz, RL = 10 –74 –77 dBc MTPR (In-Band) 25 kHz to 138 kHz, R SFDR (Out-of-Band) 144 kHz to 500 kHz, RL = 12.5 , P
= 12.5 , P
L
= +13 dBm –70 dBc
LINE
= +13 dBm –82 dBc
LINE
Input Noise Voltage f = 100 kHz 4.5 5 nVHz Input Noise Current f = 100 kHz (+Inputs) 1 pAHz
f = 100 kHz (–Inputs) 10 pAHz Crosstalk f = 1 MHz, G = +2 –74 dB
DC PERFORMANCE
Input Offset Voltage 115mV
T
MIN
to T
MAX
17 mV Input Offset Voltage Match 0.1 2.6 mV Transimpedance V
= 2 V p-p, RL = 5 830 2000 kΩ
OUT
T
MIN
to T
MAX
700 k
INPUT CHARACTERISTICS
Input Resistance +Input 10 M
–Input 125
Input Capacitance +Input 1 pF Input Bias Current (–) 0.3 8 ␮A
T
MIN
to T
MAX
14 ␮A Input Bias Current (–) Match 0.1 5.5 ␮A
T
MIN
to T
MAX
8 A Input Bias Current (+) 1 1.5 ␮A
T
MIN
to T
MAX
2.5 ␮A
Input Bias Current (+) Match 0.1 0.5 ␮A
T
CMRR V
to T
MIN
IN
MAX
2 V to 4 V 51 54 dB
1 A
Input CM Voltage Range 1.2 3.8 V
OUTPUT CHARACTERISTICS
Cap Load 30% Overshoot 1000 pF Output Resistance Frequency = 100 kHz, PWDN1, PWDN0 = 1 0.2 Output Voltage Swing R
= 100 0.16 to 4.87 V
L
RL = 5 0.5 to 4.5 V
Linear Output Current SFDR < –85 dBc, f = 100 kHz, R
= 10 , Differential 350 400 mA
L
Short-Circuit Current 1000 mA
POWER SUPPLY
Supply Current/Amp PWDN1 = 1, PWDN0 = 1 9 10 mA
T
MIN
to T
MAX
11.4 mA
STBY Supply Current/Amp PWDN1 = 0, PWDN0 = 1 or 4.5 5.1 mA
PWDN1 = 1, PWDN0 = 0 4.5 5.1 mA SHUTDOWN Supply Current/Amp PWDN1 = 0, PWDN0 = 0 0.3 0.55 mA Operating Range Single Supply 3.3 8 V +Power Supply Rejection Ratio ⌬V
–Power Supply Rejection Ratio ⌬V
= ⫾1 V 60 66 dB
S
T
to T
MIN
T
MIN
MAX
= ⫾1 V 52 55 dB
S
to T
MAX
56 dB
50 dB
–2–
REV. A
AD8018
WARNING!
ESD SENSITIVE DEVICE
Parameter Conditions Min Typ Max Unit
LOGIC INPUTS (PWDN1, 0)
Logic “1” Voltage 2.0 V Logic “0” Voltage 0.8 V Logic Input Bias Current 240 ␮A Standby Recovery Time RL = 10 , G = +2, IS = 90% of Typical 500 ns
Specifications subject to change without notice.
ABSOLUTE MAXIMUM RATINGS
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 V
Internal Power Dissipation
2
1
Small Outline Package (R) . . . . . . . . . . . . . . . . . . . 650 mW
TSSOP Package (RU) . . . . . . . . . . . . . . . . . . . . . . 565 mW
Input Voltage (Common-Mode) . . . . . . . . . . . . . . . . . . . . ±V
Logic Voltage, PWDN0, 1 . . . . . . . . . . . . . . . . . . . . . . . . . ±V
S
S
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . ± 1.6 V
Output Short Circuit Duration
. . . . . . . . . . . . . . . . . . . . . . Observe Power Derating Curves
Storage Temperature Range RU, R . . . . . . . –65°C to +150°C
Operating Temperature Range . . . . . . . . . . . –40°C to +85°C
Lead Temperature Range (Soldering 10 sec) . . . . . . . . . 300°C
NOTES
1
Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
2
Specification is for the device on a 4-layer board in free air at 85°C:
8-Lead SOIC Package: θJA = 100°C/W. 14-Lead TSSOP Package: θJA = 115°C/W.
ORDERING GUIDE
Temperature Package Package
Model Range Description Option
AD8018AR –40°C to +85°C 8-Lead Plastic SO-8
SOIC
AD8018AR–REEL –40°C to +85°C 8-Lead SOIC SO-8 AD8018AR–REEL7 –40°C to +85°C 8-Lead SOIC SO-8 AD8018ARU –40°C to +85°C 14-Lead Plastic RU-14
TSSOP
AD8018ARU–REEL –40°C to +85°C 14-Lead Plastic RU-14
TSSOP
AD8018ARU–REEL7 –40°C to +85°C 14-Lead Plastic RU-14
TSSOP
AD8018ARU–EVAL Evaluatio
n Board RU-14
MAXIMUM POWER DISSIPATION
The maximum power that can be safely dissipated by the AD8018 is limited by the associated rise in junction temperature. The maximum safe junction temperature for plastic encapsulated devices is determined by the glass transition temperature of the plastic, approximately 150°C. Temporarily exceeding this limit may cause a shift in parametric performance due to a change in the stresses exerted on the die by the package. Exceeding a junction temperature of 175°C for an extended period can result in device failure.
While the AD8018 is internally short circuit protected, this may not be sufficient to guarantee that the maximum junction tempera­ture (150°C) is not exceeded under all conditions. To ensure proper operation, it is necessary to observe the maximum power derating curves.
2.0
1.5
8-LEAD SOIC PACKAGE
1.0
14-LEAD TSSOP PACKAGE
0.5
MAXIMUM POWER DISSIPATION – Watts
0
40 30 20 100 10 2030 4050 6070 8090
50
AMBIENT TEMPERATURE – C
TJ = 150ⴗC
Figure 3. Plot of Maximum Power Dissipation vs. Temperature
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the AD8018 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high-energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.
REV. A
–3–
AD8018
1
FREQUENCY – Hz
10
10
1
100
1000
100 1k 10k 100k 1M
0.1
10
100
VS = ⴞ2.5V R
L
= 100
V
NOISE
I
NOISE
I
NOISE
V
NOISE
– nV/ Hz (RTI)
I
NOISE
– pA/ Hz
Typical Performance Characteristics
V
750
S
750
AD8018
V
SIGNAL
50
–V
S
TPC 1. Single-Ended Test Circuit
150
100
50
0
–50
OUTPUT VOLTAGE – mV
–100
10␮F
10␮F
TANT
0.1␮F
0.1␮F
TANT
G = 2 V
= 2.5V
S
R
= 5
L
R
LOAD
V
OUT
TPC 4. I
3k
2.5k
2k
1.5k
1k
OUTPUT IMPEDANCE –
500
NOISE
and V
vs. Frequency
NOISE
(0,0)
VS=2.5V
(1,0)
(1,1)
–150
50
0
150 200 250 300 350 400 450 500
100
TIME – ns
TPC 2. Small Signal Step Response
TPC 5. Output Impedance vs. Frequency, for Full Power,
0
0.01
0.1 1 10 100 FREQUENCY – MHz
1k
Standby, and Shutdown Modes
(+0.1%)
(–0.1%)
3
2
1
0
mV
V
– (VINⴛ2)
1
2
3
10 20 30 40 50 60 70 80 10090
0
OUT
TIME – ns
TPC 6. 0.1% Settling Time
G = 2 V
= 2.5
S
V
IN
R
L
= 100
= 2V p-p
3
G = 2 V
= 2.5V
S
= 5
R
L
2
1
0
–1
OUTPUT VOLTAGE – V
2
3
0
100
50
150 200 250 300 350 400 450 500
TIME – ns
TPC 3. Large Signal Step Response
–4–
REV. A
5
FREQUENCY – Hz
10k
OUTPUT VOLTAGE – dBV
–25
1M
5
10M 100M 1G100k
22
19
16
13
10
7
4
1
2
G = 2 V
S
= 2.5V
R
L
= 5
FREQUENCY – Hz
100k
CMRR – dB
–70
1M 10M 100M
60
50
40
30
20
10
1G
G = 2 V
S
= 2.5V
R
L
= 100
STANDBY
(1,0) or (0,1)
(1,1)
FULL POWER
2
1
4
7
10
13
16
OUTPUT VOLTAGE dBV
19
22
25
10k
100k
1M
FREQUENCY – Hz
10M 100M
TPC 7. Output Voltage vs. Frequency
G = 2 V
= 2.5V
S
R
= 100
L
AD8018
1G
TPC 10. Output Voltage vs. Frequency
2.5
2.4
2.3
2.2
2.1
2.0
1.9
1.8
OUTPUT SWING – Volts
1.7
1.6
1.5 1
10
TPC 8. Output Swing vs. R
0
10
20
30
40
PSRR
–50
PSRR – dB
60
70
80
90
100k
TPC 9. PSRR vs. Frequency
REV. A
SWING
LOAD RESISTANCE –
PSRR
100 1000 10k
1M 10M
FREQUENCY – Hz
–SWING
VS = ⴞ2.5V
LOAD
G = 2 V V R
= 2.5V
S
= 1V
S
= 100
L
100M
4
NORMALIZED GAIN – dB
1
2
3
4
5
6
3
2
1
0
100k
750750
V
IN
50
1M
V
OUT
R
L
STANDBY
(1,0) or (0,1)
(1,1)
FULL POWER
10M 100M
FREQUENCY – Hz
G = 2
= 2.5V
V
S
= 100
R
L
TPC 11. Small Signal Frequency Response
TPC 12. CMRR vs. Frequency, Full Power, and Standby Mode
–5–
1G
AD8018
VSIG
50
V
S
100
1/2
500
500
500
25
6V
AD8138
6V
500
IN
100
AD8018
750
0.1␮F
500
750
AD8018
1/2
V
S
10F0.1␮F
220␮F
AD9632
R
L
10F0.1␮F
7.96k⍀ 402⍀
0.1␮F
6V
0.1␮F
0.1␮F
6V
7.96k
50
OUT
402
TPC 13. Differential Test Circuit
60
70
80
3RD HARMONIC
V
= 6V p–p
OUT
R
= 10
L
V
= 2.5V
S
PWDN 1,0 = 1,1
60
70
80
90
100
DIFFERENTIAL DISTORTION dBc
110
510
2ND HARMONIC
3RD HARMONIC
LOAD RESISTANCE –
TPC 16. Differential Distortion vs. R
60
70
80
2ND HARMONIC
VS = 2.5V G = 4 f
= 100kHz
O
V
= 6V p–p
OUT
LOAD
VS = 2.5V R
= 10
L
G = 4 f
= 100kHz
O
PWDN 1,0 = 1,1
100
90
100
DIFFERENTIAL DISTORTION dBc
110
0.01 0.1 FREQUENCY – MHz
2ND HARMONIC
1.0
TPC 14. Differential Distortion vs. Frequency
–50
VS = ⴞ2.5V R
= 3
L
G
= 4
–60
f
= 100kHz
DIFFERENTIAL DISTORTION – dBc
100
110
70
80
90
O
PWDN 1,0 = 1,1
200
300
PEAK OUTPUT CURRENT – mA
3RD HARMONIC
2ND HARMONIC
400 500 600 700 800
TPC 15. Differential Distortion vs. Peak Output Current
–90
3RD HARMONIC
–100
DIFFERENTIAL DISTORTION – dBc
–110
3
45 678
OUTPUT VOLTAGE – Volts
TPC 17. Differential Distortion vs. Peak-to-Peak Output Voltage
DIFFERENTIAL DISTORTION dBc
60
70
80
90
100
110
2ND HARMONIC
3
45678
OUTPUT VOLTAGE – Volts
VS = 2.5V R
= 10
L
G = 4 f
= 100kHz
O
PWDN 1,0 = 1,0 or 0,1
3RD HARMONIC
TPC 18. Differential Distortion vs. Peak-to-Peak Output Voltage
–6–
REV. A
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