Analog Devices AD8017 Datasheet

Dual High Output Current,

a

FEATURES
High Output Drive Capability

20 V p-p Differential Output Voltage, R
10 V p-p Single-Ended Output Voltage While

Delivering 200 mA to a 25 ⍀ Load

Low Power Operation

+5 V to +12 V Voltage Supply @ 7 mA/Amplifier

Low Distortion

–78 dBc @ 500 kHz SFDR, R

= 100 ⍀, VO = 2 V p-p

L

–58 dBc Highest Harmonic @ 1 MHz, I

= 10 ⍀)

(R

L

High Speed

160 MHz, –3 dB Bandwidth (G = +2)
1600 V/␮s Slew Rate

APPLICATIONS
xDSL PCI Cards
Consumer DSL Modems
Line Driver
Video Distribution

PRODUCT DESCRIPTION

The AD8017 is a low cost, dual high speed amplifier capable of
driving low distortion signals to within 1.0 V of the supply rail.
It is intended for use in single supply xDSL systems where low
distortion and low cost are essential. The amplifiers will be able
to drive a minimum of 200 mA of output current per amplifier.
The AD8017 will deliver –78 dBc of SFDR at 500 kHz, required
for many xDSL applications.

Fabricated in ADI’s high speed XFCB process, the high band­width and fast slew rate of the AD8017 keep distortion to a
minimum, while dissipating a minimum amount of power. The
quiescent current of the AD8017 is 7 mA/amplifier.

Low distortion, high output voltage drive, and high output
current drive make the AD8017 ideal for use in low cost Cus­tomer Premise End (CPE) equipment for ADSL, SDSL, VDSL
and proprietary xDSL systems.

= 50 ⍀

L

= 270 mA

O

High Speed Amplifier

AD8017

PIN CONFIGURATION

8-Lead Thermal Coastline SOIC (SO-8)

AD8017

1

OUT1

2

12

10

8

6

4

OUTPUT VOLTAGE SWING – V p-p

2

0

–IN1

+IN1

1

–
+

3

–V

4

S

VS = ⴞ6V

VS = ⴞ2.5V

LOAD RESISTANCE – ⍀

Figure 1. Output Swing vs. Load Resistance

The AD8017 drive capability comes in a very compact form.
Utilizing ADI’s proprietary Thermal Coastline SOIC package,
the AD8017’s total (static and dynamic) power on +12 V sup­plies is easily dissipated without external heatsink, other than to
place the AD8017 on a 4-layer PCB.

The AD8017 will operate over the commercial temperature
range –40°C to +85°C.

+V

S

+

R1

8

+V

S

7

OUT2

6

–IN2

–
+

5

+IN2

10010

1000

+

REV. A

Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.

= 100⍀

R

V

IN

–

–V

V

REF

R2

N

:N

S

P

S

TRANSFORMER

L

OR
135⍀

LINE

V

OUT

POWER
IN dB

–

Figure 2. Differential Drive Circuit for xDSL Applications

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: [phone] World Wide Web Site: http://www.analog.com
Fax: [phone] © Analog Devices, Inc., 2000

AD8017–SPECIFICATIONS

(@ +25ⴗC, VS = ⴞ6 V, RL = 100 ⍀, RF = RG = 619 ⍀, unless otherwise noted)

Parameter Conditions Min Typ Max Unit

DYNAMIC PERFORMANCE

–3 dB Bandwidth G = +2, V

0.1 dB Bandwidth V
Large Signal Bandwidth V

< 0.4 V p-p 70 MHz

OUT

= 4 V p-p 105 MHz

OUT

Slew Rate Noninverting, V
Rise and Fall Time Noninverting, V
Settling Time 0.1%, V

< 0.4 V p-p 100 160 MHz

OUT

= 2 V p-p, G = +2 1600 V/µs

OUT

= 2 V p-p 2.6 ns

OUT

= 4 V Step 35 ns

OUT

Overload Recovery VIN = 5 V p-p 74 ns

NOISE/HARMONIC PERFORMANCE

Distortion V

2nd Harmonic 500 kHz, R

3rd Harmonic 500 kHz, R

IP3 500 kHz, R
IMD 500 kHz, R

= 2 V p-p

OUT

1 MHz, R

1 MHz, R

= 100 Ω/25 Ω –78/–71 dBc

L

= 100 Ω/25 Ω –76/–69 dBc

L

= 100 Ω/25 Ω –105/–91 dBc

L

= 100 Ω/25 Ω –81/–72 dBc

L

= 100 Ω/25 Ω 40/35 dBm

L

= 100 Ω/25 Ω –76/–66 dBc

L

MTPR 26 kHz to 1.1 MHz –66 dBc
Input Noise Voltage f = 10 kHz 1.9 nV/√Hz
Input Noise Current f = 10 kHz (+ Inputs) 23 pA√Hz

f = 10 kHz (– Inputs) 21 pA√Hz

Crosstalk f = 5 MHz, G = +2 –66 dB

DC PERFORMANCE

Input Offset Voltage 1.8 3.0 mV

4.0 mV

Open Loop Transimpedance V

T

MIN–TMAX

= 2 V p-p 185 700 kΩ

OUT

T

MIN–TMAX

143 kΩ

INPUT CHARACTERISTICS

Input Resistance +Input 50 kΩ
Input Capacitance +Input 2.4 pF
Input Bias Current (+) 16 ±45 µA

T

MIN–TMAX

±67 µA

Input Bias Current (–) 1.0 ±25 µA

CMRR V

T

MIN–TMAX

= ±2.5 V 59 63 dB

CM

±32 µA

Input CM Voltage Range ±5.1 V

OUTPUT CHARACTERISTICS

Output Resistance 0.2 Ω
Output Voltage Swing R
Output Current

1

= 25 Ω±4.6 ±5.0 V

L

Highest Harmonic < –58 dBc, 200 270 mA
f = 1 MHz, R
T

MIN–TMAX

= 10 Ω

L

, Highest Harmonic < –52 dBc 100 mA

Short-Circuit Current 1500 mA

POWER SUPPLY

Supply Current/Amp 7.0 7.7 mA

T

MIN–TMAX

7.8 mA

Operating Range Dual Supply ±2.2 ± 6.0 V
Power Supply Rejection Ratio 58 61 dB
Operating Temperature Range –40 +85 °C

NOTES

1

Output current is defined here as the highest current load delivered by the output of each amplifier into a specified resistive load ( RL = 10 Ω), while maintaining an
acceptable distortion level (i.e., less than –60 dBc highest harmonic) at a given frequency (f = 1 MHz).

Specifications subject to change without notice.

–2–

REV. A

AD8017

SPECIFICATIONS

Parameter Conditions Min Typ Max Unit

DYNAMIC PERFORMANCE

–3 dB Bandwidth G = +2, V

0.1 dB Bandwidth V
Large Signal Bandwidth V
Slew Rate Noninverting, V
Rise and Fall Time Noninverting, V
Settling Time 0.1%, V
Overload Recovery VIN = 2.5 V p-p 74 ns

NOISE/HARMONIC PERFORMANCE

Distortion V

2nd Harmonic 500 kHz, R

3rd Harmonic 500 kHz, R

IP3 500 kHz, R
IMD 500 kHz, R
MTPR 26 kHz to 1.1 MHz –66 dBc
Input Noise Voltage f = 10 kHz 1.8 nV/√Hz
Input Noise Current f = 10 kHz (+ Inputs) 23 pA√Hz

Crosstalk f = 5 MHz, G = +2 –66 dB

DC PERFORMANCE

Input Offset Voltage 0.8 2.0 mV

Open Loop Transimpedance V

INPUT CHARACTERISTICS

Input Resistance +Input 50 kΩ
Input Capacitance +Input 2.4 pF
Input Bias Current (+) 16 ±40 µA

Input Bias Current (–) 2 ±25 µA

CMRR V
Input CM Voltage Range ±1.6 V

OUTPUT CHARACTERISTICS

Output Resistance 0.2 Ω
Output Voltage Swing R
Output Current

Short-Circuit Current 1300 mA

POWER SUPPLY

Supply Current/Amp 6.2 7 mA

Operating Range Dual Supply ±2.2 ± 6.0 V
Power Supply Rejection Ratio 59 62 dB
Operating Temperature Range –40 +85 °C

NOTES

1

Output current is defined here as the highest current load delivered by the output of each amplifier into a specified resistive load ( RL = 10 Ω), while maintaining an
acceptable distortion level (i.e., less than –60 dBc highest harmonic) at a given frequency (f = 1 MHz).

Specifications subject to change without notice.

1

(@ +25ⴗC, VS = ⴞ2.5 V, RL = 100 ⍀, RF = RG = 619 ⍀, unless otherwise noted)

< 0.4 V p-p 75 120 MHz

OUT

< 0.4 V p-p 40 MHz

OUT

= 4 V p-p 100 MHz

OUT

OUT

= 2 V p-p

OUT

1 MHz, R

1 MHz, R

= 2 V Step 35 ns

L

= 100 Ω/25 Ω –73/–66 dBc

L

L

= 100 Ω/25 Ω –79/–74 dBc

L

L

L

= 2 V p-p, G = +2 800 V/µs

OUT

= 2 V p-p 2.0 ns

OUT

= 100 Ω/25 Ω –75/–68 dBc

= 100 Ω/25 Ω –91/–88 dBc

= 100 Ω/25 Ω 40/36 dBm
= 100 Ω/25 Ω –78/–64 dBc

f = 10 kHz (– Inputs) 21 pA√Hz

T

MIN–TMAX

= 2 V p-p 40 166 kΩ

OUT

T

MIN–TMAX

T

MIN–TMAX

T

MIN–TMAX

= ±1.0 (±1.0) 57 60 dB

CM

= 25 Ω±1.55 ±1.65 V

L

45 kΩ

Highest Harmonic < –55 dBc, 100 120 mA
f = 1 MHz, R
T

MIN–TMAX

T

MIN–TMAX

= 10 Ω

L

Highest Harmonic < 50 dBc 60 mA

2.6 mV

±62 µA

±32 µA

7.3 mA

–3–REV. A

AD8017

WARNING!

ESD SENSITIVE DEVICE

ABSOLUTE MAXIMUM RATINGS

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.2 V

Internal Power Dissipation

2

1

Small Outline Package (R) . . . . . . . . . . . . . . . . . . . . . . . 1.3 W

Input Voltage (Common Mode) . . . . . . . . . . . . . . . . . . . . ± V

S

Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . ± 2.5 V

Output Short Circuit Duration

. . . . . . . . . . . . . . . . . . . . Observe Power Derating Curves

Storage Temperature Range . . . . . . . . . . . . –65°C to +125°C

Operating Temperature Range . . . . . . . . . . . –40°C to +85°C

Lead Temperature Range (Soldering 10 sec) . . . . . . . . +300°C

NOTES

1

Stresses above those listed under Absolute Maximum Ratings may cause perma-

nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.

2

Specification is for device on a two-layer board with 2500 mm2 of 2 oz. copper at

+25°C 8-lead SOIC package: θJA = 95.0°C/W.

MAXIMUM POWER DISSIPATION

The maximum power that can be safely dissipated by the AD8017
is limited by the associated rise in junction temperature. The
maximum safe junction temperature for plastic encapsulated
device is determined by the glass transition temperature of the
plastic, approximately +150°C. Temporarily exceeding this limit
may cause a shift in parametric performance due to a change in
the stresses exerted on the die by the package. Exceeding a junc­tion temperature of +175°C for an extended period can result in
device failure.

The output stage of the AD8017 is designed for maximum load
current capability. As a result, shorting the output to common
can cause the AD8017 to source or sink 500 mA. To ensure
proper operation, it is necessary to observe the maximum power
derating curves. Direct connection of the output to either power
supply rail can destroy the device.

2.0

1.5

TJ = +150ⴗC

1.0

0.5

MAXIMUM POWER DISSIPATION – Watts

0

09010

TJ = +125ⴗC

20 30 40 50 60 70 80

AMBIENT TEMPERATURE – ⴗC

Figure 3. Plot of Maximum Power Dissipation vs.
Temperature for AD8017

ORDERING GUIDE

Model Temperature Range Package Description Package Option

AD8017AR –40°C to +85°C 8-Lead SOIC SO-8
AD8017AR-REEL –40°C to +85°C Tape and Reel 13" SO-8
AD8017AR-REEL7 –40°C to +85°C Tape and Reel 7" SO-8
AD8017AR-EVAL Evaluation Board

CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AD8017 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high-energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.

–4–

REV. A

Typical Performance Characteristics–

619⍀ 619⍀

R

L

V

OUT

+V

S

–V

S

10␮F

10␮F

+

+

0.1␮F

0.1␮F

54.4⍀

V

IN

AD8017

619⍀ 619⍀

V

IN

49.9⍀

0.1␮F

0.1␮F

+

10␮F

+

10␮F

V

OUT

R

L

+V

S

–V

S

Figure 4. Test Circuit: Gain = +2

OUTPUT = 100mV

25mV/DIV

INPUT = 50mV

200ns/DIV

Figure 5. 100 mV Step Response; G = +2, VS = ±2.5 V or

±

6 V, RL = 100

Ω

Figure 7. Test Circuit: Gain = –1

OUTPUT = 100mV

INPUT = 100mV

50mV/DIV 25 mV/DIV

200ns/DIV

Figure 8. 100 mV Step Response; G = –1, VS = ±2.5 V or

±

6 V, RL = 100

Ω

OUTPUT = 4V

1V/DIV

INPUT = 2V

200ns/DIV

Figure 6. 4 V Step Response; G = +2, VS = ±6 V,

= 100

R

L

Ω

OUTPUT = 4V

2V/DIV 1V/DIV

INPUT = 4V

200ns/DIV

Figure 9. 4 V Step Response; G = –1, VS = ±6 V,

= 100

R

L

Ω

–5–REV. A