Analog Devices AD8016 b Datasheet
Low Power, High Output Current
NC
NC
NC
BIAS
–V2
+V1
+V2
V
OUT
1
–V
IN
1
PWDN1
DGND
–V1
V
OUT
2
+V
IN
2
PWDN0
NC = NO CONNECT
NC
NC
NC
–V
IN
2
+V
IN
1
NC
NC
NC
NC
NC
NC
NC
NC
28
27
26
25
24
23
22
21
20
19
18
17
16
15
1
2
3
4
5
6
7
8
9
10
11
12
13
14
AD8016ARE
a
FEATURES
xDSL Line Driver that Features Full ADSL CO (Central
Office) Performance on 12 V Supplies
Low Power Operation
5 V to 12 V Voltage Supply
12.5 mA/Amp (Typ) Total Supply Current
Power Reduced Keep Alive Current of 4.5 mA/Amp
High Output Voltage and Current Drive
= 600 mA
I
OUT
40 V p-p Differential Output Voltage R
VS = 12 V
Low Single-Tone Distortion
–75 dBc @ 1 MHz SFDR, R
= 100 , VO = 2 V p-p
L
MTPR = –75 dBc, 26 kHz to 1.1 MHz, Z
= 20.4 dBm
P
LINE
High Speed
78 MHz Bandwidth (–3 dB), G = +5
40 MHz Gain Flatness
1000 V/s Slew Rates
= 50 ,
L
= 100 ,
LINE
20-Lead PSOP3
1
+V1
2
1
V
OUT
3
1
V
INN
4
1
V
INP
5
NC
6
NC
7
NC
8
PWDN0
9
DGND
10
–V1
NC = NO CONNECT
(RP-20)
+–+
–
AD8016
xDSL Line Driver
AD8016
PIN CONFIGURATION
24-Lead Batwing
(RB-24)
20
+V2
19
V
OUT
18
V
INN
17
V
INP
16
NC
15
NC
14
NC
13
PWDN1
12
BIAS
11
–V2
28-Lead TSSOP-EP
+V1
V
OUT
2
V
INN
2
V
INP
2
AGND
AGND
AGND
AGND
PWDN0
DGND
–V1
NC
(RE-28-1)
1
1
2
1
3
–
1
4
5
6
7
AD8016
8
9
10
11
12
NC = NO CONNECT
24
+V2
23
V
2
OUT
V
2
22
21
20
19
18
17
16
15
14
13
INN
2
V
INP
AGND
AGND
AGND
AGND
PWDN1
BIAS
–V2
NC
+–+
PRODUCT DESCRIPTION
The AD8016 high output current dual amplifier is designed
for the line drive interface in Digital Subscriber Line systems
such as ADSL, HDSL2, and proprietary xDSL systems. The
drivers are capable, in full-bias operation, of providing 24.4 dBm
output power into low resistance loads, enough to power a
20.4 dBm line, including hybrid insertion loss.
–75dBc
10dB/DIV
549.3
Figure 1. Multitone Power Ratio; VS = ±12 V, 20.4 dBm
Output Power into 100 Ω, Downstream
REV. B
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties that
may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Analog Devices. Trademarks and
registered trademarks are the property of their respective owners.
551.3 552.3 553.3 554.3 555.3 556.3 557.3 558.3 559.3
550.3
FREQUENCY (kHz)
The AD8016 is available in a low cost 24-lead SO-Batwing,
a thermally enhanced 20-lead PSOP3, and a 28-lead TSSOP-EP
with an exposed lead frame (ePAD). Operating from ±12 V
supplies, the AD8016 requires only 1.5 W of total power
dissipation (refer to the Power Dissipation section for details)
while driving 20.4 dBm of power downstream using the
xDSL hybrid in Figure 33a and Figure 33b. Two digital bits
(PWDN0, PWDN1) allow the driver to be capable of full performance, an output keep-alive state, or two intermediate bias
states. The keep-alive state biases the output transistors enough
to provide a low impedance at the amplifier outputs for back
termination.
The low power dissipation, high output current, high output voltage
swing, flexible power-down, and robust thermal packaging enable
the AD8016 to be used as the Central Office (CO) terminal driver
in ADSL, HDSL2, VDSL, and proprietary xDSL systems.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781/329-4700 www.analog.com
Fax: 781/326-8703 © 2003 Analog Devices, Inc. All rights reserved.
AD8016–SPECIFICATIONS
(@ 25C, VS = 12 V, RL = 100 , PWDN0, PWDN1 = (1, 1), T
T
= +85C, unless otherwise noted.)
MAX
= –40C,
MIN
Parameter Conditions Min Typ Max Unit
DYNAMIC PERFORMANCE
–3 dB Bandwidth G = +1, R
G = +5, R
Bandwidth for 0.1 dB Flatness G = +5, R
Large Signal Bandwidth V
Peaking V
Slew Rate V
Rise and Fall Time V
OUT
OUT
OUT
OUT
Settling Time 0.1%, V
Input Overdrive Recovery Time V
OUT
= 1.5 kΩ, V
F
= 499 Ω, V
F
= 499 Ω, V
F
= 0.2 V p-p 380 MHz
OUT
< 0.5 V p-p 69 78 MHz
OUT
= 0.2 V p-p 16 38 MHz
OUT
= 4 V p-p 90 MHz
= 0.2 V p-p < 50 MHz 0.1 dB
= 4 V p-p, G = +2 1000 V/µs
= 2 V p-p 2 ns
= 2 V p-p 23 ns
OUT
= 12.5 V p-p 350 ns
NOISE/DISTORTION PERFORMANCE
Distortion, Single-Ended V
= 2 V p-p, G = +5, RF = 499 Ω
OUT
Second Harmonic fC = 1 MHz, RL = 100 Ω/25 Ω –75/–62 –77/–64 dBc
Third Harmonic f
Multitone Power Ratio* 26 kHz to 1.1 MHz, Z
IMD 500 kHz, ∆f = 10 kHz, R
= 1 MHz, RL = 100 Ω/25 Ω –88/–74 –93/–76 dBc
C
= 20.4 dBm –75 dBc
P
LINE
= 100 Ω,
LINE
= 100 Ω/25 Ω –84/–80 –88/–85 dBc
L
IP3 500 kHz, RL = 100 Ω/25 Ω 42/40 43/41 dBm
Voltage Noise (RTI) f = 10 kHz 2.6 4.5 nV/√Hz
Input Current Noise f = 10 kHz 18 21 pA√Hz
INPUT CHARACTERISTICS
RTI Offset Voltage –3.0 1.0 +3.0 mV
+Input Bias Current –45 +45 µA
–Input Bias Current –75 4 +75 µA
Input Resistance 400 kΩ
Input Capacitance 2pF
Input Common-Mode Voltage Range –10 +10 V
Common-Mode Rejection Ratio 58 64 dB
OUTPUT CHARACTERISTICS
Output Voltage Swing Single-Ended, RL = 100 Ω –11 +11 V
Linear Output Current G = 5, R
= 10 Ω, f1 = 100 kHz,
L
–60 dBc SFDR 400 600 mA
Short-Circuit Current 2000 mA
Capacitive Load Drive 80 pF
POWER SUPPLY
Operating Range ±3 ±13 V
Quiescent Current PWDN1, PWDN0 = (1, 1) 12.5 13.2 mA/Amp
PWDN1, PWDN0 = (1, 0) 8 10 mA/Amp
PWDN1, PWDN0 = (0, 1) 5 8 mA/Amp
PWDN1, PWDN0 = (0, 0) 4 6 mA/Amp
Recovery Time To 95% of I
Q
25 µs
Shutdown Current 250 µA Out of Bias Pin 1.5 4.0 mA/Amp
Power Supply Rejection Ratio ∆VS = ±1 V 63 75 dB
OPERATING TEMPERATURE RANGE –40 +85 °C
*See Figure 43, R20, R21 = 0 Ω, R1 = open.
Specifications subject to change without notice.
–2–
REV. B
AD8016
SPECIFICATIONS
(@ 25C, VS = 6 V, RL = 100 , PWDN0, PWDN1 = (1, 1), T
T
= +85C, unless otherwise noted.)
MAX
= –40C,
MIN
Parameter Conditions Min Typ Max Unit
DYNAMIC PERFORMANCE
–3 dB Bandwidth G = +1, R
G = +5, R
Bandwidth for 0.1 dB Flatness G = +5, RF = 499 Ω, V
Large Signal Bandwidth V
Peaking V
Slew Rate V
Rise and Fall Time V
OUT
OUT
OUT
OUT
Settling Time 0.1%, V
Input Overdrive Recovery Time V
OUT
= 1.5 kΩ, V
F
= 499 Ω, V
F
= 0.2 V p-p 320 MHz
OUT
< 0.5 V p-p 70 71 MHz
OUT
= 0.2 V p-p 10 15 MHz
OUT
= 1 V rms 80 MHz
= 0.2 V p-p < 50 MHz 0.7 1.0 dB
= 4 V p-p, G = +2 300 V/µs
= 2 V p-p 2 ns
= 2 V p-p 39 ns
OUT
= 6.5 V p-p 350 ns
NOISE/DISTORTION PERFORMANCE
Distortion, Single-Ended G = +5, V
Second Harmonic f
Third Harmonic f
= 1 MHz, RL = 100 Ω/25 Ω –73/61 –75/–63 dBc
C
= 1 MHz, RL = 100 Ω/25 Ω –80/–68 –82/–70 dBc
C
Multitone Power Ratio* 26 kHz to 138 kHz, Z
= 13 dBm –68 dBc
P
LINE
IMD 500 kHz, ∆f = 110 kHz, R
= 2 V p-p, RF = 499 Ω
OUT
= 100 Ω,
LINE
= 100 Ω/25 Ω –87/–82 –88/–83 dBc
L
IP3 500 kHz 42/39 42/39 dBm
Voltage Noise (RTI) f = 10 kHz 4 5 nV/√Hz
Input Current Noise f = 10 kHz 17 20 pA√Hz
INPUT CHARACTERISTICS
RTI Offset Voltage –3.0 0.2 +3.0 mV
+Input Bias Current –25 10 +25 µA
–Input Bias Current –30 10 +30 µA
Input Resistance 400 kΩ
Input Capacitance 2pF
Input Common-Mode Voltage Range –4 +4 V
Common-Mode Rejection Ratio 60 66 dB
OUTPUT CHARACTERISTICS
Output Voltage Swing Single-Ended, RL = 100 Ω –5 +5 V
Linear Output Current G = +5, R
= 5 Ω, f = 100 kHz,
L
–60 dBc SFDR 300 420 mA
Short-Circuit Current 830 mA
Capacitive Load Drive RS = 10 Ω 50 pF
POWER SUPPLY
Quiescent Current PWDN1, PWDN0 = (1, 1) 8 9.7 mA/Amp
PWDN1, PWDN0 = (1, 0) 6 6.9 mA/Amp
PWDN1, PWDN0 = (0, 1) 4 5.0 mA/Amp
PWDN1, PWDN0 = (0, 0) 3 4.1 mA/Amp
Recovery Time To 95% of I
Q
23 µs
Shutdown Current 250 µA Out of Bias Pin 1.0 2.0 mA/Amp
Power Supply Rejection Ratio ∆VS = ±1 V 63 80 dB
OPERATING TEMPERATURE RANGE –40 +85 °C
NOTES
*See Figure 43, R20, R21 = 0 Ω, R1 = open.
Specifications subject to change without notice.
LOGIC INPUTS (CMOS Compatible Logic)
(PWDN0, PWDN1, VCC = 12 V or 6 V; Full Temperature Range)
Parameter Min Typ Max Unit
Logic 1 Voltage 2.2 V
CC
V
Logic 0 Voltage 0 0.8 V
REV. B
–3–
AD8016
)
ABSOLUTE MAXIMUM RATINGS
1
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26.4 V
Internal Power Dissipation
PSOP3 Package
SO-Batwing Package
TSSOP-EP Package
Input Voltage (Common-Mode) . . . . . . . . . . . . . . . . . . . . ±V
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . ±V
2
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.2 W
3
. . . . . . . . . . . . . . . . . . . . . . . . . 1.4 W
4
. . . . . . . . . . . . . . . . . . . . . . . . 1.4 W
S
S
Output Short-Circuit Duration
. . . . . . . . . . . . . . . . . . . .Observe Power Derating Curves
Storage Temperature Range . . . . . . . . . . . . . –65°C to +125°C
Operating Temperature Range . . . . . . . . . . . . –40°C to +85°C
Lead Temperature Range (Soldering 10 sec) . . . . . . . . . 300°C
NOTES
1
Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
2
Specification is for device on a 4-layer board with 10 inches2 of 1 oz. copper at 85°C
20-lead PSOP3 package: θJA = 18°C/W.
3
Specification is for device on a 4-layer board with 10 inches2 of 1 oz. copper at 85°C
24-lead Batwing package: θJA = 28°C/W.
4
Specification is for device on a 4-layer board with 9 inches2 of 1 oz. copper at 85°C
28-lead (TSSOP-EP) package: θJA = 29°C/W.
MAXIMUM POWER DISSIPATION
The maximum power that can be safely dissipated by the AD8016
is limited by the associated rise in junction temperature. The
maximum safe junction temperature for plastic encapsulated
device is determined by the glass transition temperature of the
plastic, approximately 150°C. Temporarily exceeding this limit
may cause a shift in parametric performance due to a change in
the stresses exerted on the die by the package.
The output stage of the AD8016 is designed for maximum load
current capability. As a result, shorting the output to common
can cause the AD8016 to source or sink 2000 mA. To ensure
proper operation, it is necessary to observe the maximum power
derating curves. Direct connection of the output to either power
supply rail can destroy the device.
8
7
6
5
4
3
2
MAXIMUM POWER DISSIPATION (W)
1
PSOP3
SO-BATWING
TSSOP-EP
0
0
10 20 30 40 50 60 70 80 90
AMBIENT TEMPERATURE (C
Figure 2. Maximum Power Dissipation vs.
Temperature for AD8016 for TJ = 125°C
ORDERING GUIDE
Temperature Package Package
Model Range Description Option
AD8016ARP –40°C to +85°C 20-Lead PSOP3 RP-20A
AD8016ARP-REEL –40°C to +85°C 20-Lead PSOP3 RP-20A
AD8016ARP-EVAL Evaluation Board
AD8016ARB –40°C to +85°C 24-Lead SO-Batwing RB-24
AD8016ARB-REEL –40°C to +85°C 24-Lead SO-Batwing RB-24
AD8016ARB-EVAL Evaluation Board
AD8016ARE –40°C to +85°C 28-Lead TSSOP-EP RE-28-1
AD8016ARE-REEL –40°C to +85°C 28-Lead TSSOP-EP RE-28-1
AD8016ARE-REEL7 –40°C to +85°C 28-Lead TSSOP-EP RE-28-1
AD8016ARE-EVAL Evaluation Board
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AD8016 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
–4–
REV. B
Typical Performance Characteristics–
AD8016
124 499
R
L
V
IN
49.9
0.1F
0.1F
+
+
10F
10F
V
OUT
+V
S
–V
S
Figure 3. Single-Ended Test Circuit; G = +5
V
= 100mV
OUT
VOLTS
VIN = 20mV
499
499
10F
+
0.1F
0.1F
10F
+V
O
R
L
–V
O
+
+V
S
+V
IN
49.9
111
–V
IN
49.9
–V
S
Figure 6. Differential Test Circuit; G = +10
V
= 100mV
OUT
VOLTS
VIN = 20mV
TIME (100ns/DIV)
Figure 4. 100 mV Step Response; G = +5, VS = ±6 V,
= 25 Ω, Single-Ended
R
L
V
= 5V
OUT
VOLTS
VIN = 800mV
TIME (100ns/DIV)
Figure 5. 4 V Step Response; G = +5, VS = ±6 V,
RL = 25 Ω, Single-Ended
TIME (100ns/DIV)
Figure 7. 100 mV Step Response; G = +5, VS = ±12 V,
= 25 Ω, Single-Ended
R
L
V
= 4V
OUT
VOLTS
VIN = 800mV
TIME (100ns/DIV)
Figure 8. 4 V Step Response; G = +5, VS = ±12 V,
RL = 25 Ω, Single-Ended
REV. B
–5–
AD8016
–30
RF = 499
–40
G = +10
V
= 4V p-p
O
–50
–60
–70
–80
DISTORTION (dBc)
–90
–100
–110
0.01 10
FREQUENCY (MHz)
PWDN1, PWDN0 = (1,1)
10.1
(0,0)
(0,1)
(1,0)
20
Figure 9. Distortion vs. Frequency; Second Harmonic,
= ±12 V, RL = 50 Ω, Differential
V
S
–30
–40
–50
–60
RF = 499
G = +10
V
= 4V p-p
O
(0,0)
(0,1)
(1,0)
–30
RF = 499
–40
G = +10
V
= 4V p-p
O
–50
–60
–70
–80
DISTORTION (dBc)
–90
–100
–110
0.01 10
FREQUENCY (MHz)
(0,0)
(0,1)
(1,0)
PWDN1, PWDN0 = (1,1)
10.1
20
Figure 12. Distortion vs. Frequency; Third Harmonic,
VS = ±12 V, RL = 50 Ω, Differential
–30
RF = 499
–40
–50
–60
G = +10
V
= 4V p-p
O
(0,1)
(0,0)
(1,0)
–70
–80
DISTORTION (dBc)
–90
–100
–110
0.01 1010.1
FREQUENCY (MHz)
PWDN1, PWDN0 = (1,1)
20
Figure 10. Distortion vs. Frequency; Second Harmonic,
VS = ±6 V, RL = 50 Ω, Different
–30
RF = 499
–35
G = +5
–40
–45
–50
–55
–60
DISTORTION (dBc)
–65
–70
–75
–80
0 100
(0,0)
(0,1)
200
300 400 500 600 700 800
PEAK OUTPUT CURRENT (mA)
(1,0)
PWDN1, PWDN0 = (1,1)
–70
–80
DISTORTION (dBc)
–90
–100
–110
0.01 10
FREQUENCY (MHz)
PWDN1, PWDN0 = (1,1)
10.1
20
Figure 13. Distortion vs. Frequency; Third Harmonic,
VS = ±6 V, RL = 50 Ω, Differential
–30
RF = 499
G = +5
–40
–50
–60
–70
DISTORTION (dBc)
–80
–90
0 100
(0,0)
(0,1)
300 400 500 600 700
200
PEAK OUTPUT CURRENT (mA)
(1,0)
PWDN1,
PWDN0 = (1,1)
Figure 11. Distortion vs. Peak Output Current; Second
Harmonic, VS = ±12 V, RL = 10 Ω, f = 100 kHz, Single-Ended
Figure 14. Distortion vs. Peak Output Current, Third
Harmonic; VS = ±12 V, RL = 10 Ω, G = +5, f = 100 kHz,
Single-Ended
–6–
REV. B
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