Analog Devices AD8012 b Datasheet

Dual 350 MHz

8

7

6

5

1

2

3

4

OUT1

–IN1

+IN1

+V

S

OUT2

–IN2

+IN2–V

S

AD8012

Low Power Amplifier

FEATURES
Low Power

1.7 mA/Amplifier Supply Current

Fully Specified for 5 V and +5 V Supplies
High Output Current, 125 mA
High Speed

350 MHz, –3 dB Bandwidth (G = +1)

150 MHz, –3 dB Bandwidth (G = +2)

2,250 V/s Slew Rate

20 ns Settling Time to 0.1%
Low Distortion

–72 dBc Worst Harmonic @ 500 kHz, R

–66 dBc Worst Harmonic @ 5 MHz, R
Good Video Specifications (R

= 1 k, G = +2)

L

= 100 

L

= 1 k

L

0.02% Differential Gain Error

0.06 Differential Phase Error

Gain Flatness 0.1 dB to 40 MHz

60 ns Overdrive Recovery
Low Offset Voltage, 1.5 mV
Low Voltage Noise, 2.5 nV/√Hz
Available in 8-Lead SOIC and 8-Lead MSOP

APPLICATIONS
XDSL, HDSL Line Drivers
ADC Buffers
Professional Cameras
CCD Imaging Systems
Ultrasound Equipment
Digital Cameras

PRODUCT DESCRIPTION

The AD8012 is a dual, low power, current feedback amplifier
capable of providing 350 MHz bandwidth while using only

1.7 mA per amplifier. It is intended for use in high frequency,
wide dynamic range systems where low distortion and high
speed are essential and low power is critical.

With only 1.7 mA of supply current, the AD8012 also offers
exceptional ac specifications such as 20 ns settling time and
2,250 V/µs slew rate. The video specifications are 0.02% differ-
ential gain and 0.06 degree differential phase, excellent for such
a low power amplifier. In addition, the AD8012 has a low offset
of 1.5 mV.

The AD8012 is well suited for any application that requires high
performance with minimal power.

The product is available in standard 8-lead SOIC or MSOP
packages and operates over the industrial temperature range
–40°C to +85°C.

AD8012

*

FUNCTIONAL BLOCK DIAGRAM

–40

G = +2
V

= 2V p-p

OUT

= 750

R

–50

–60

–70

DISTORTION – dBc

–80

–90

10 1k100

THIRD

SECOND

RL – 

F

Figure 1. Distortion vs. Load Resistance, VS = ±5V,
Frequency = 500 kHz

+V

S

+

V

–

AMP 1

IN

–V

S

V

REF

R1

R2

Np:Ns

TRANSFORMER

RL = 100
OR

135

+

LINE

V

OUT

POWER
IN dB

–

Figure 2. Differential Drive Circuit for XDSL Applications

*Protected under U.S. Patent Number 5,537,079.

REV. B

Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties that
may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Analog Devices. Trademarks and
registered trademarks are the property of their respective owners.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: [phone] www.analog.com
Fax: [phone] © 2003 Analog Devices, Inc. All rights reserved.

AD8012–SPECIFICATIONS

DUAL SUPPLY

(@ TA = 25C, VS = 5 V, G = +2, RL = 100 , RF = RG = 750 , unless otherwise noted.)

Parameter Conditions Min Typ Max Unit

DYNAMIC PERFORMANCE

–3 dB Small Signal Bandwidth G = +1, V

G=+2, V
G=+2, V

0.1 dB Bandwidth V
Large Signal Bandwidth V
Slew Rate V
Rise and Fall Time V

< 0.4 V p-p, RL = 1 kΩ/100 Ω 40/23 MHz

OUT

= 4 V p-p 75 MHz

OUT

= 4 V p-p 2,250 V/µs

OUT

= 2 V p-p 3 ns

OUT

Settling Time 0.1%, V

0.02%, V

< 0.4 V p-p, RL = 1 kΩ 270 350 MHz

OUT

< 0.4 V p-p, RL = 1 kΩ 95 150 MHz

OUT

< 0.4 V p-p, RL = 100 Ω 90 MHz

OUT

= 2 V p-p 20 ns

OUT

= 2 V p-p 35 ns

OUT

Overdrive Recovery 2⫻ Overdrive 60 ns

NOISE/HARMONIC PERFORMANCE

Distortion V

Second Harmonic 500 kHz, R

Third Harmonic 500 kHz, R

Output IP3 500 kHz, ∆f = 10 kHz, R
IMD 500 kHz, ∆f = 10 kHz, R
Crosstalk 5 MHz, R

= 2 V p-p, G = +2

OUT

5 MHz, R

5 MHz, R

= 1 kΩ/100 Ω –89/–73 dBc

L

= 1 kΩ/100 Ω –78/–62 dBc

L

= 1 kΩ/100 Ω –84/–72 dBc

L

= 1 kΩ/100 Ω –66/–52 dBc

L

= 100 Ω –70 dB

L

= 1 kΩ/100 Ω 30/40 dBm

L

= 1 kΩ/100 Ω –79/–77 dBc

L

Input Voltage Noise f = 10 kHz 2.5 nV/√Hz
Input Current Noise f = 10 kHz, +Input, –Input 15 pA/√Hz
Differential Gain f = 3.58 MHz, R

= 150 Ω/1 kΩ, G = +2 0.02/0.02 %

L

Differential Phase f = 3.58 MHz, RL = 150 Ω/1 kΩ, G = +2 0.3/0.06 Degrees

DC PERFORMANCE

Input Offset Voltage ±1.5 ±4mV

±5mV

Open-Loop Transimpedance V

T

MIN–TMAX

= ±2 V, RL = 100 Ω 240 500 kΩ

OUT

T

MIN–TMAX

200 kΩ

INPUT CHARACTERISTICS

Input Resistance +Input 450 kΩ
Input Capacitance +Input 2.3 pF
Input Bias Current +Input, –Input ±3 ±12 µA

±15 µA

Common-Mode Rejection Ratio V

+Input, –Input, T

= ±2.5 V –56 –60 dB

CM

MIN–TMAX

Input Common-Mode Voltage Range ±3.8 ±4.1 V

OUTPUT CHARACTERISTICS

Output Resistance G = +2 0.1 Ω
Output Voltage Swing ±3.85 ±4V
Output Current T

MIN–TMAX

70 125 mA

Short-Circuit Current 500 mA

POWER SUPPLY

Supply Current/Amp 1.7 1.8 mA

T

MIN–TMAX

1.9 mA

Operating Range Dual Supply ±1.5 ±6.0 V
Power Supply Rejection Ratio –58 –60 dB

Specifications subject to change without notice.

REV. B–2–

AD8012

SINGLE SUPPLY

(@ TA = 25C, VS = +5 V, G = +2, RL = 100 , RF = RG = 750 , unless otherwise noted.)

Parameter Conditions Min Typ Max Unit

DYNAMIC PERFORMANCE

–3 dB Small Signal Bandwidth G = +1, V

G=+2, V
G=+2, V

0.1 dB Bandwidth V
Large Signal Bandwidth V
Slew Rate V
Rise and Fall Time V

< 0.4 V p-p, RL = 1 kΩ/100 Ω 43/24 MHz

OUT

= 2 V p-p 60 MHz

OUT

= 3 V p-p 1,200 V/µs

OUT

= 2 V p-p 2 ns

OUT

Settling Time 0.1%, V

0.02%, V

< 0.4 V p-p, RL = 1 kΩ 220 300 MHz

OUT

< 0.4 V p-p, RL = 1 kΩ 90 140 MHz

OUT

< 0.4 V p-p, RL = 100 Ω 85 MHz

OUT

= 2 V p-p 25 ns

OUT

= 2 V p-p 40 ns

OUT

Overdrive Recovery 2⫻ Overdrive 60 ns

NOISE/HARMONIC PERFORMANCE

Distortion V

= 2 V p-p, G = +2

OUT

Second Harmonic 500 kHz, RL = 1 kΩ/100 Ω –87/–71 dBc

5 MHz, R

Third Harmonic 500 kHz, R

5 MHz, R
Output IP3 500 kHz, R
IMD 500 kHz, R
Crosstalk 5 MHz, R

= 1 kΩ/100 Ω –77/–61 dBc

L

= 1 kΩ/100 Ω –89/–72 dBc

L

= 1 kΩ/100 Ω –78/–52 dBc

L

= 1 kΩ/100 Ω 30/40 dBm

L

= 1 kΩ/100 Ω –77/–80 dBc

L

= 100 Ω –70 dB

L

Input Voltage Noise f = 10 kHz 2.5 nV/√Hz
Input Current Noise f = 10 kHz, +Input, –Input 15 pA/√Hz

Black Level Clamped to +2 V, f = 3.58 MHz
Differential Gain R

= 150 Ω/1 kΩ 0.03/0.03 %

L

Differential Phase RL = 150 Ω/1 kΩ 0.4/0.08 Degrees

DC PERFORMANCE

Input Offset Voltage ± 1 ±3mV

±4mV

Open-Loop Transimpedance V

T

MIN–TMAX

= 2 V p-p, RL = 100 Ω 200 400 kΩ

OUT

T

MIN–TMAX

150 kΩ

INPUT CHARACTERISTICS

Input Resistance +Input 450 kΩ
Input Capacitance +Input 2.3 pF
Input Bias Current +Input, –Input ±3 ±12 µA

±15 µA

Common-Mode Rejection Ratio V

+Input, –Input, T

= 1.5 V to 3.5 V –56 –60 dB

CM

MIN–TMAX

Input Common-Mode Voltage Range 1.5 to 3.5 1.2 to 3.8 V

OUTPUT CHARACTERISTICS

Output Resistance G = +2 0.1 Ω
Output Voltage Swing 1 to 4 0.9 to 4.2 V
Output Current T

MIN–TMAX

50 100 mA

Short-Circuit Current 500 mA

POWER SUPPLY

Supply Current/Amp 1.55 1.75 mA

T

MIN–TMAX

1.85 mA
Operating Range Single Supply 3 12 V
Power Supply Rejection Ratio –58 –60 dB

Specifications subject to change without notice.

REV. B

–3–

AD8012

MAXIMUM POWER DISSIPATION

The maximum power that can be safely dissipated by the AD8012
is limited by the associated rise in junction temperature. The maxi­mum safe junction temperature for plastic encapsulated devices
is determined by the glass transition temperature of the plastic,
approximately +150°C. Temporarily exceeding this limit may
cause a shift in parametric performance due to a change in the
stresses exerted on the die by the package. Exceeding a junction
temperature of +175°C for an extended period can result in
device failure.

The output stage of the AD8012 is designed for maximum load
current capability. As a result, shorting the output to common
can cause the AD8012 to source or sink 500 mA. To ensure
proper operation, it is necessary to observe the maximum power
derating curves. Direct connection of the output to either power
supply rail can destroy the device.

Test Circuits

750 750

V

IN

49.9

0.1F

0.1F

+

+

10F

10F

Test Circuit 1. Gain = +2

V

OUT

R

L

+V

S

–V

S

2.0

TJ = 150C

1.5

1.0

0.5

MAXIMUM POWER DISSIPATION – W

0

–40 –30

–50

8-LEAD SOIC

PACKAGE

8-LEAD

MSOP

010203040506070 8090

–20 –10

AMBIENT TEMPERATURE – C

Figure 3. Plot of Maximum Power Dissipation vs.
Temperature for AD8012

V

IN

750 750

53.6

0.1F

0.1F

+

+

10F

10F

V

OUT

R

L

+V

S

–V

S

Test Circuit 2. Gain = –1

REV. B–4–

AD8012

ABSOLUTE MAXIMUM RATINGS

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.6 V

Internal Power Dissipation

2

1

SOIC Package (R) . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.8 W

MSOP Package (RM) . . . . . . . . . . . . . . . . . . . . . . . . 0.6 W

Input Voltage (Common Mode) . . . . . . . . . . . . . . . . . . . . ±V

Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . ± 2.5 V

Output Short-Circuit Duration

NOTES

1

Stresses above those listed under Absolute Maximum Ratings may cause perma-

nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.

2

Specification is for device in free air at +25°C.

S

8-Lead SOIC Package: ␪

8-Lead MSOP Package: ␪

= 155°C/W

JA

= 200°C/W

JA

. . . . . . . . . . . . . . . . . .Observe Power Derating Curves

Storage Temperature Range RM, R . . . . . . –65°C to +125°C

Operating Temperature Range (A Grade) . . . –40°C to +85°C

Lead Temperature Range (Soldering 10 sec) . . . . . . . . . 300°C

CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection. Although the
AD8012 features proprietary ESD protection circuitry, permanent damage may occur on devices
subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended
to avoid performance degradation or loss of functionality.

ORDERING GUIDE

Model Temperature Range Package Description Package Options Branding

AD8012AR –40°C to +85°C 8-Lead SOIC R-8
AD8012AR-REEL –40°C to +85°C13” Tape and Reel R-8
AD8012AR-REEL7 –40°C to +85°C7” Tape and Reel R-8
AD8012ARM –40°C to +85°C 8-Lead MSOP RM-08 H6A
AD8012ARM-REEL –40°C to +85°C13” Tape and Reel RM-08 H6A
AD8012ARM-REEL7 –40°C to +85°C7” Tape and Reel RM-08 H6A
AD8012ARMZ* –40°C to +85°C 8-Lead MSOP RM-08 H6A
AD8012ARMZ-REEL* –40°C to +85°C13” Tape and Reel RM-08 H6A
AD8012ARMZ-REEL7* –40°C to +85°C7” Tape and Reel RM-08 H6A

*Z = Pb-free product.

REV. B

–5–